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71. 发明授权

EP2601692B1 LIGHT-EMITTING DIODE CHIP 失效
标题翻译：发光二极管芯片
公开(公告)号：EP2601692B1
公开(公告)日：2016-10-05
申请号：EP11743486.0
申请日：2011-07-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz , ENGL, Karl
IPC分类号： H01L33/38 , H01L33/40 , H01L33/44 , H01L33/22
CPC分类号： H01L33/52 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/60 , H01L2933/0016

72. 发明授权

EP2260516B1 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 有权
标题翻译：光电子半导体芯片和方法生产同样
公开(公告)号：EP2260516B1
公开(公告)日：2016-05-11
申请号：EP09727845.1
申请日：2009-03-13
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , HÖPPEL, Lutz , RODE, Patrick , SABATHIL, Matthias
IPC分类号： H01L33/40 , H01L33/10 , H01L33/38 , H01L33/46 , H01L33/62
CPC分类号： H01L33/382 , H01L33/10 , H01L33/40 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00

73. 发明公开

EP2543083A1 LEUCHTDIODENCHIP 有权
公开(公告)号：EP2543083A1
公开(公告)日：2013-01-09
申请号：EP11703686.3
申请日：2011-02-15
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ENGL, Karl , RAMMELSBERGER, Stefanie , GMEINWIESER, Nikolaus , EIBL, Johann
IPC分类号： H01L33/40 , H01L33/46
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip comprising a semiconductor layer sequence (2) is specified, said semiconductor layer sequence having an active layer (3) suitable for generating electromagnetic radiation, wherein the light emitting diode chip (1) has a radiation exit area (4) at a front side. At a rear side lying opposite the radiation exit area (4), the light emitting diode chip (1) has, at least in regions, a mirror layer (5) containing silver. A functional layer (6) for reducing corrosion and/or improving adhesion of the mirror layer (5) is arranged on the mirror layer (5), wherein a material from which the functional layer (6) is formed is distributed in the entire mirror layer (5). The material of the functional layer (6) has a concentration gradient in the mirror layer (5), wherein the concentration of the material of the functional layer (6) in the mirror layer (5) decreases proceeding from the functional layer (6) in the direction towards the semiconductor layer sequence (2).
摘要翻译：指定包括半导体层序列（2）的发光二极管芯片，所述半导体层序列具有适于产生电磁辐射的有源层（3），其中发光二极管芯片（1）具有辐射出射区域（4）在前方。在与辐射出射区域（4）相对的后侧处，发光二极管芯片（1）至少在区域中具有包含银的镜层（5）。在反射镜层（5）上设置有用于减少反射镜层（5）的腐蚀和/或改善粘合性的功能层（6），其中形成功能层（6）的材料分布在整个反射镜层（5）。功能层（6）的材料在镜层（5）中具有浓度梯度，其中功能层（6）的材料在镜层（5）中的浓度从功能层（6）在朝向半导体层序列（2）的方向上。

74. 发明公开

EP2351079A1 STRAHLUNGSEMITTIERENDER HALBLEITERCHIP 有权
公开(公告)号：EP2351079A1
公开(公告)日：2011-08-03
申请号：EP09767932.8
申请日：2009-10-29
申请人： OSRAM Opto Semiconductors GmbH
发明人： MOOSBURGER, Jürgen , VON MALM, Norwin , RODE, Patrick , HÖPPEL, Lutz , ENGL, Karl
IPC分类号： H01L25/16 , H01L27/15 , H01L33/38 , H01L33/08
CPC分类号： H01L27/15 , H01L25/167 , H01L33/005 , H01L33/02 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip (1), which has a carrier (5) and a semiconductor body (2) having a semiconductor layer sequence. An emission region (23) and a protective diode region (24) are produced in the semiconductor chip (2) having the semiconductor layer sequence. The semiconductor layer sequence has an active region (20) provided for generating radiation, which is disposed between a first semiconductor layer (21) and a second semiconductor layer (22). The first semiconductor layer (21) is arranged on the side of the active region (20) that faces away from the carrier (5). The emission region (23) has a recess (25), which extends through the active region. In the emission region (23), the first semiconductor layer (21) is connected to a first connecting layer (31) in an electrically conductive manner, wherein the first connecting layer extends in the recess (25) from the first semiconductor layer (21) in the direction of the carrier (5). In the protective diode region (24), the first connecting layer is connected to the second semiconductor layer (22) in an electrically conductive manner. Furthermore, a method for producing a radiation-emitting semiconductor chip is provided.
摘要翻译：本发明涉及一种发射辐射的半导体芯片（1），其具有载体（5）和具有半导体层序列的半导体本体（2）。在具有半导体层序列的半导体芯片（2）中产生发射区域（23）和保护二极管区域（24）。半导体层序列具有设置用于产生辐射的有源区（20），其设置在第一半导体层（21）和第二半导体层（22）之间。第一半导体层（21）布置在背离载体（5）的有源区（20）的一侧上。发射区域（23）具有延伸穿过有源区域的凹部（25）。在发光区域（23）中，第一半导体层（21）以导电的方式连接到第一连接层（31），其中第一连接层从第一半导体层（21））在载体（5）的方向上。在保护二极管区域（24）中，第一连接层以导电的方式连接到第二半导体层（22）。此外，提供了一种用于制造发射辐射的半导体芯片的方法。

75. 发明公开

EP2340568A1 OPTOELEKTRONISCHER HALBLEITERKÖRPER 有权
标题翻译： OPTOELEKTRONISCHERHALBLEITERKÖRPER
公开(公告)号：EP2340568A1
公开(公告)日：2011-07-06
申请号：EP09741206.8
申请日：2009-09-30
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , SABATHIL, Matthias
IPC分类号： H01L33/00 , H01L27/15 , H01L33/38 , H01L33/22 , H01L33/62
CPC分类号： H01L33/382 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semi-conductor body is provided, having a semi-conductor layer sequence (1), which has an active layer (100) suited for generating electromagnetic radiation, and a first electric connecting layer (4). The semiconductor body is provided for emitting electromagnetic radiation from a front face (2). The semiconductor layer sequence (1) comprises at least one opening (110), which extends completely through the semiconductor layer sequence (1) from the front face (2) to a back face (3) opposite the front face (2). The first electric connecting layer (4) is disposed on the back face (3) of the semiconductor body, a partial piece (40) of the first electric connecting layer (4) runs from the back face (3) through the opening (110) to the front face (2) and covers a first partial region (11) of a front main surface (10) of the semiconductor layer sequence (1). A second partial region (12) of the front main surface (10) is not covered by the first electric connecting layer (4).
摘要翻译：公开了一种具有半导体层序列（1）的光电半导体本体，包括适于产生电磁辐射的有源层（100）的半导体层序列和第一电接触层（4）。光电半导体本体被设置为用于从前侧（2）发射电磁辐射。所述半导体层序列（1）包括至少一个开口（110），所述至少一个开口（110）在从所述正面（2）到与所述前侧（2）相反的方向上从所述半导体层序列（1） 2）。第一电接触层（4）布置在半导体本体的后部（3）处，第一电接触层（4）的部分（40）从后侧（3）延伸穿过开口（110）至所述前侧（2）并且覆盖所述半导体层序列（1）的前侧主面（10）的第一子区域（11）。前侧主面（10）的第二子区域（12）不被第一电接触层（4）覆盖。

76. 发明公开

EP2304799A1 STRAHLUNGEMITTIERENDER HALBLEITERCHIP MIT SCHUTZ GEGEN ELEKTROSTATISCHE ENTLADUNGEN UND ENTSPRECHENDES HERSTELLUNGSVERFAHREN 有权
标题翻译：半导体芯片的STRAHLUNGEMITTIEREN可以得到保护免遭电火花及相应方法
公开(公告)号：EP2304799A1
公开(公告)日：2011-04-06
申请号：EP09775907.0
申请日：2009-06-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , HAHN, Berthold , STREUBEL, Klaus , KLEIN, Markus
IPC分类号： H01L27/15 , H01L33/40
CPC分类号： H01L27/15 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip (1), which has a carrier (5) and a semiconductor body (2) having a semiconductor layer sequence. The semiconductor layer sequence has an active region (20) provided for generating radiation, a first semiconductor layer (21) and a second semiconductor layer (22). The active region is arranged between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is arranged on the side of the active region that faces away from the carrier. The semiconductor body has at least one recess (25), which extends through the active region. The first semiconductor layer is connected to a first connecting layer (31) in an electrically conductive manner, wherein the first connecting layer extends in the recess from the first semiconductor layer in the direction of the carrier. The first connecting layer is electrically connected to the second semiconductor layer by a protective diode (4). Furthermore, a method for producing a radiation-emitting semiconductor chip is provided.

77. 发明公开

EP2245667A1 MONOLITHISCHER, OPTOELEKTRONISCHER HALBLEITERKÖRPER UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN的单片机，OPTOELEKTRONISCHERHALBLEITERKÖRPER
公开(公告)号：EP2245667A1
公开(公告)日：2010-11-03
申请号：EP09714749.0
申请日：2009-02-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , SINGER, Frank , RODE, Patrick , HÖPPEL, Lutz , STRASSBURG, Martin
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L27/156 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an optoelectronic semi-conductor body comprising a semi-conductor layer sequence that is divided into at least two electrically insulated part segments. In each part area, the semi-conductor layer sequence comprises an active layer. Also, at least three electric contact pads are provided. One first conductor plane contacts the first of the at least two part segments and the first contact pad. A second conductor plane contacts the second of the at least two part segments and a second contact pad. A third conductor plane joins both part segments together and contacts the third contact pad. Also, the conductor planes are respectively arranged opposite a first main side and said first main side is provided for the emission of generated electromagnetic radiation.
摘要翻译：光电子半导体主体包括半导体层序列，其被细分成至少两个电隔离的子区段。半导体层序列在每个子区域中具有活性层。此外，提供至少三个电接触垫。第一线路级别与至少两个子片段中的第一个以及与第一接触焊盘接触。第二线路级与第二接触垫接触至少两个子段中的第二线段。第三行电平将两个子段彼此连接并与第三个接触焊盘接触。此外，线路电平各自布置成与第一主面相对，其中第一主面面用于发射产生的电磁辐射。

78. 发明公开

EP2149159A1 OPTOELEKTRONISCHER HALBLEITERKÖRPER UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 有权
标题翻译： OPTOELEKTRONISCHERHALBLEITERKÖRPERUND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN
公开(公告)号：EP2149159A1
公开(公告)日：2010-02-03
申请号：EP08748775.7
申请日：2008-04-24
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , RODE, Patrick , HÖPPEL, Lutz , SABATHIL, Matthias
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (2) comprising an active layer (23) suitable for generating electromagnetic radiation and a first and a second electrical connection layer (4, 6), wherein the semiconductor body is intended for the emission of electromagnetic radiation from a front side, the first and second electrical connection layers being located on a rear side opposite the front side and electrically insulated from each other by means of a separating layer (5), the first electrical connection layer (4), second electrical connection layer (6), and the separating layer (5) laterally overlapping each other, and a partial area of the second electrical connection layer (6) extending from the rear side through a penetration (3) through the active layer (23) in the direction of the front side. The invention further relates to a method for producing such an opto-electronic semiconductor body.
摘要翻译：本发明涉及一种具有半导体层序列（2）的光电半导体本体，所述半导体层序列包括适于产生电磁辐射的有源层（23）以及第一和第二电连接层（4,6），其中所述半导体本体是用于从前侧发射电磁辐射，所述第一和第二电连接层位于与所述前侧相对的后侧上并且借助于分离层（5）彼此电绝缘，所述第一电连接层，所述第二电连接层（6）和所述分离层（5）彼此横向地重叠，并且所述第二电连接层（6）的部分区域从所述后侧穿过所述穿透部有源层（23）在前侧的方向上。本发明还涉及用于制造这种光电半导体本体的方法。

79. 发明授权

EP2715809B1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权转让
公开(公告)号：EP2715809B1
公开(公告)日：2019-06-05
申请号：EP12724562.9
申请日：2012-04-26
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ENGL, Karl , TAEGER, Sebastian , WALTER, Robert , STOCKER, Johannes
IPC分类号： H01L33/42 , H01L33/38 , H01L33/20 , H01L33/40

80. 发明授权

EP2543083B1 LEUCHTDIODENCHIP 有权
公开(公告)号：EP2543083B1
公开(公告)日：2017-10-11
申请号：EP11703686.3
申请日：2011-02-15
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ENGL, Karl , RAMMELSBERGER, Stefanie , GMEINWIESER, Nikolaus , EIBL, Johann
IPC分类号： H01L33/40 , H01L33/46 , H01L33/54 , H01L33/60 , H01L33/38
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00

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