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    • 74. 发明授权
    • Near-field photomask and near-field exposure apparatus including the photomask
    • 包括光掩模的近场光掩模和近场曝光装置
    • US07262828B2
    • 2007-08-28
    • US10648317
    • 2003-08-27
    • Ryo KurodaNatsuhiko Mizutani
    • Ryo KurodaNatsuhiko Mizutani
    • G03B27/54G03B27/64G03B27/16G03F1/08G03F7/20
    • G03F7/7035B82Y10/00G03F1/50G03F7/2014G03F7/70325G03F7/70566
    • A near-field photomask includes a light shield film having openings to constitute a light shield portion. The photomask can be used to expose an exposure target with near-field light generated through the openings. The openings formed in the light shield film include two or more parallel rows of first slit openings each having a width smaller than 100 nm, and two or more parallel rows of second slit openings each having a width smaller than 100 nm, which extend perpendicularly to the rows of first slit openings while interlinking at least two of the rows of first slit openings. A near-field exposure apparatus includes the near-field photomask with a positioning unit and a source for illuminating polarized light parallel to the first slit openings for forming a latent-dot-image on an exposure target only where a second slit opening crosses the light shield portion on the near-field photomak.
    • 近场光掩模包括具有用于构成遮光部的开口的遮光膜。 光掩模可以用于通过开口产生的近场光来曝光曝光目标。 形成在遮光膜中的开口包括宽度小于100nm的两个或更多个平行的第一狭缝开口行,以及两个或更多个平行的第二狭缝开口,其宽度小于100nm,垂直于 第一狭缝开口的行,同时连接至少两排第一狭缝开口。 近场曝光装置包括具有定位单元的近场光掩模和用于照射与第一狭缝开口平行的偏振光的源,用于仅在第二狭缝开口穿过光的情况下在曝光目标上形成潜像图像 屏蔽部分在近场光掩模上。
    • 76. 发明授权
    • Near-field exposure method
    • 近场曝光法
    • US07144682B2
    • 2006-12-05
    • US10654913
    • 2003-09-05
    • Yasuhisa InaoRyo KurodaNatsuhiko Mizutani
    • Yasuhisa InaoRyo KurodaNatsuhiko Mizutani
    • G03F7/20
    • G03F7/7035B82Y10/00G03F1/50G03F7/2014G03F7/70325G03F7/70566
    • A method for exposing a workpiece on the basis of near-field light escaping from an exposure mask having a light blocking film with a plurality of rectangular openings. The method includes protecting non-polarized near-field exposure light from a light source through the openings of the exposure mask to perform exposure of a pattern on the workpiece. The widths of the rectangular openings are smaller than that at a cross-point between a first curve on a coordinate of widths of the openings versus a near-field light intensity for an incident-light electric-field direction perpendicular to a lengthwise direction of a small-opening pattern and a second curve on the same coordinate for an incident-light electric-field direction parallel to the lengthwise direction of the small-opening pattern.
    • 基于从具有多个矩形开口的具有遮光膜的曝光掩模逃逸的近场光来曝光工件的方法。 该方法包括通过曝光掩模的开口保护来自光源的非偏振近场曝光光,以进行图案在工件上的曝光。 矩形开口的宽度小于开口宽度坐标上的第一曲线与垂直于纵向方向的入射光电场方向的近场光强度之间的交叉点处的宽度 小开口图案和平行于小开口图案的长度方向的入射光电场方向的相同坐标上的第二曲线。
    • 78. 发明授权
    • Photomask for near-field exposure and exposure apparatus including the photomask for making a pattern
    • 用于近场曝光的光掩模和包括用于形成图案的光掩模的曝光装置
    • US07050144B2
    • 2006-05-23
    • US10423938
    • 2003-04-28
    • Natsuhiko MizutaniYasuhisa Inao
    • Natsuhiko MizutaniYasuhisa Inao
    • G03B27/54G03B27/62G03B27/18G03F1/08
    • B82Y10/00G03F1/50G03F7/2014G03F7/70325G03F7/7035
    • A photomask for near-field light exposure includes a transparent substrate, and a shading member on the substrate, a mask pattern including at least two apertures with different widths not greater than the wavelength of light from a light source. The shading member has a constant thickness that is set such that differences between light intensities directly below each of the apertures of different widths is 20% or less based on a largest light intensity of the light intensities directly below each of the apertures of different widths. A near-field light exposure apparatus includes a stage that holds the photomask, a light source, a sample table that holds a work substrate provided with a photoresist having a thickness that is less than the wavelength of exposure light, and a means for controlling the distance between the work substrate and the photomask.
    • 用于近场曝光的光掩模包括透明基板和在基板上的遮光构件,掩模图案包括不大于来自光源的光的波长的不同宽度的至少两个孔。 遮光构件具有恒定的厚度,其被设定为使得在不同宽度的每个孔之下的每个孔下方的光强度之间的差异基于不同宽度的每个孔下面的光强度的最大光强度为20%或更小。 近场曝光装置包括保持光掩模的台,光源,保持具有小于曝光光的波长的厚度的光致抗蚀剂的工作基板的样品台,以及用于控制 工作基板和光掩模之间的距离。