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71. 发明专利

JPH05133384A ROTOR 失效
公开(公告)号：JPH05133384A
公开(公告)日：1993-05-28
申请号：JP29586091
申请日：1991-11-12
申请人： MITSUBISHI HEAVY IND LTD
发明人： KOBAYASHI TOSHIRO , FUKAYA YASUHIRO
IPC分类号： F04D19/04 , F04D29/02 , F04D29/28
摘要： PURPOSE:To prevent deformation at the time of connecting a disk material and also corrosion in a brazing filler metal part. CONSTITUTION:Since center part sides of multistep disks 1b1, 1c1, 1d1 and a rotary shaft 1a are connected by a metallic brazing filler 5, a base material is not deformed with no pressurization required though the material is heated at a relatively low temperature at the time of connection. Since a clearance between the disks 1b1, 1c1, 1d1 and the rotary shaft 1a in an outer side from these connecting parts is filled with heat resistant plastic 6, the metallic brazing filler 5 is not brought into direct contact with gas of chloride and fluoride and prevented from corrosion.

72. 发明专利

JPH0559535A ION BEAM ASSIST FILM FORMING TOOL 失效
公开(公告)号：JPH0559535A
公开(公告)日：1993-03-09
申请号：JP22184591
申请日：1991-09-02
申请人： MITSUBISHI HEAVY IND LTD
发明人： ROKKAKU TADASHI , KOBAYASHI TOSHIRO , HANANAKA KATSUYASU , MORIMOTO SATOSHI
IPC分类号： B23P15/28 , C23C14/06 , C23C14/22
摘要： PURPOSE:To attain the miniaturization of a device and the reduction of film forming time, at the time of performing ion beam assist film forming on the cutting edge part of a cutting tool, by maximizing the film thickness in an optional angle with the corner part of the cutting edge part as the center. CONSTITUTION:Ion beam assist film forming is performed with the corner part 11a (O denotes the normal line from the corner part 11a) of the cutting edge part 11 of a cutting tool as the center, and at the time of forming an ion beam assist film from the corner part 11a to a draft face 11b, the film thickness in the range of an optional angle theta is maximized. In this way, the place of film forming is reduced, the miniaturization of a device and the reduction of film forming time can be attained and a cutting tool in which a sufficient service life is secured can be obtd.

73. 发明专利

JPH04221059A FORMATION OF CUBIC BORON NITRIDE FILM 失效
公开(公告)号：JPH04221059A
公开(公告)日：1992-08-11
申请号：JP40416890
申请日：1990-12-20
申请人： MITSUBISHI HEAVY IND LTD
发明人： KOBAYASHI TOSHIRO
IPC分类号： C23C14/06 , C23C14/22 , C23C14/48
摘要： PURPOSE:To form a cubic boron nitride film having high adhesive strength to a substrate while maintaining high productivity even when the substrate has a complex shape. CONSTITUTION:Boron is vapor-deposited on a substrate while irradiating the surface of the substrate with ions of gaseous nitrogen or nitrogen and argon emitted from an ion gun at increased acceleration voltage to form a mixed layer consisting of nitrogen, boron and the element of the substrate on the surface of the substrate. The acceleration voltage is then reduced and a similar process is carried out to form a thin cubic boron nitride film on the mixed layer. Boron is further vapor-deposited while ionizing gaseous nitrogen or nitrogen and argon by electric discharge between filament and electrode to form a cubic boron nitride film on the thin film.

74. 发明专利

JPH04120267A METHOD OF FORMING THIN FILM AND PRODUCTION OF BORON NITRIDE COATED MEMBER 失效
公开(公告)号：JPH04120267A
公开(公告)日：1992-04-21
申请号：JP30250190
申请日：1990-11-09
申请人： MITSUBISHI HEAVY IND LTD
发明人： WADA TETSUYOSHI , YAMASHITA NOBUKI , OGAWA MAKOTO , MORITA SHOJI , ROKKAKU TADASHI , KOBAYASHI TOSHIRO
IPC分类号： C23C14/06 , C23C14/22
摘要： PURPOSE:To form a thin film having excellent adhesion with a substrate, high crystallinity and high quality by forming the thin film by two steps of procedures with specified acceleration voltage of ions in the method of forming a thin film by vapor deposition and ion beam irradiation. CONSTITUTION:A thin film is formed by heating and vaporizing the thin film material or a part of it to carry out vapor deposition on a substrate surface while simultaneously irradiating the substrate with various ions from the ion source. The acceleration voltage of ions is varied by two steps, 5-100KV in the first step and 0. 5-5KV in the second step. Thereby, a mixture layer is formed in the first step, and then a thin film of high crystallinity and high quality is formed thereon in the second step. Moreover, the mixture layer first formed gives excellent adhesion property with the substrate. By this method, the baron nitride-coated member having a boundary layer of an oblique structure in the interface, with excellent adhesion and high hardness can be obtained.

75. 发明专利

JPH0428858A PRODUCTION OF VAPOR DEPOSITION MATERIAL 失效
公开(公告)号：JPH0428858A
公开(公告)日：1992-01-31
申请号：JP13256990
申请日：1990-05-24
申请人： MITSUBISHI HEAVY IND LTD
发明人： TAGUCHI TOSHIO , KOBAYASHI TOSHIRO , HANANAKA KATSUYASU , KAMIKAWA SUSUMU
IPC分类号： C23C14/24
摘要： PURPOSE:To produce a vapor deposition material capable of efficiently vapor- depositing a thin SiO film with superior quality at a low cost by mixing SiO2 and Si, compacting the resulting mixture, and sintering the resulting green compact in an N2 atmosphere. CONSTITUTION:An SiO2 powder and an Si powder are mixed. As to the mixing ratio, about 30-70% SiO2 and about 70-30% Si by mole ratio are desirable. At this time, it is preferable that, as to the above SiO2, grains of about 0.1mum diameter comprise about 30% of the mixture. After the above powder mixture is compacted, the resulting green compact is sintered in an N2 atmosphere. As to this N2 atmosphere, that of 1-5atms by partial pressure of N2 is suitably used. Further, preferred sintering temp. is 1200-1400 deg.C. By the above sintering, a nitride is formed on the surface of active Si in the compact and the oxidation of Si in the air can be prevented. Nitrogen in this nitride can easily be removed by means of heating in vacuum at the time of vapor deposition. By this method, the inexpensive vapor deposition material capable of vapor-depositing a thin SiO or SiO-like film with superior quality at an evaporation velocity equal to that of SiO as simple substance can be obtained.

76. 发明专利

JPH045401A ROTOR 失效
公开(公告)号：JPH045401A
公开(公告)日：1992-01-09
申请号：JP10639690
申请日：1990-04-24
申请人： MITSUBISHI HEAVY IND LTD
发明人： FUKAYA YASUHIRO , MATSUMOTO TAKAHIRO , KOBAYASHI TOSHIRO , OSAWA HARUSHIGE
IPC分类号： F01D5/06
摘要： PURPOSE:To obtain a rotor with high function strength indestructible during its high speed rotation by creating, in a concentrically circular form, annular void sections on the inside perimetrical surface sides of adjacent contact planes of plural disks. CONSTITUTION:A rotation axis 1a and disks 1b1, 1c1 and 1d1 are put together on the same line by engaging a protruding engagement section 3 arranged in the center of both the disk 1c1 and the rotation axis 1a with a fellow recess engagement section. Since a rotor 1 forms a spigot joint and there are also differences in disk structures, their shearing stresses are concentrated on the inside perimetrical surface sides of adjacent contact planes of disks. Accordingly, the shearing stress is diminished by creating, in a concentrically circular form, annular void sections 4 on the inside perimetrical surface sides of adjacent contact planes of respective disks. In this way, a junction strength can be enhanced and a rotor indestructible during it high speed can be obtained.

77. 发明专利

JPH03153862A VACUUM VAPOR DEPOSITION METHOD OF AL 失效
公开(公告)号：JPH03153862A
公开(公告)日：1991-07-01
申请号：JP29001789
申请日：1989-11-09
申请人： MITSUBISHI HEAVY IND LTD
发明人： YOSHIDA YASUYUKI , KOBAYASHI TOSHIRO , NAKAGAWA YOSHIKIYO , HANANAKA KATSUYASU
IPC分类号： C23C14/14
摘要： PURPOSE:To prevent a graphite crucible from being attacked by Al and is thereby consumed in a short period of time by adding specific ratios of Zr and Ti to the molten Al in the graphite crucible, melting the molten Al added with this Zr and Ti at a specific temp. and depositing the Al by evaporation at the time of vacuum vapor deposition of the Al by utilizing the graphite crucible. CONSTITUTION:The molten Al in the graphite crucible is used as the vapor deposition source at the time of subjecting the surface of plastic films for packaging food, building materials, steel sheets for household electric appliances, etc., to vacuum vapor deposition of the thin film of the Al. The metal elements, such as Zr and Ti are added into the molten Al in the graphite crucible to form the compsn. consisting of 78 to 97vol.% grade of the Al in the molten metal and Zr and Ti as the balance in this case. This Al alloy is heated and melted to the m. p. of the alloy to 1500 deg.C to cause the vapor deposition of the Al. The Zr and Ti has the higher affinity to graphite than the Al and preferentially forms ZrC and TiC which deposit and stick to the inside surface of the graphite crucible. The attack of the graphite by the Al is thus suppressed and the service life of the graphite crucible is greatly prolonged.

78. 发明专利

JPH0386246A PRODUCTION OF CATALYST CARRIER 失效
公开(公告)号：JPH0386246A
公开(公告)日：1991-04-11
申请号：JP21860489
申请日：1989-08-28
申请人： MITSUBISHI HEAVY IND LTD
发明人： KOBAYASHI TOSHIRO , HANANAKA KATSUYASU
IPC分类号： B01D53/86 , B01J37/02
摘要： PURPOSE:To obtain a low cost catalyst carrier easy to work and having oxidation resistance at high temp. by forming an Al coating film on the surface of a steel base material, forming acicular gibbsite on the surface of the coating film by boiling in pure water and carrying out wash coating with gamma-Al2O3. CONSTITUTION:An Al coating film is formed on one side or both sides of a base material by plating, vacuum deposition or other method. After working and assembling, acicular gibbsite [Al(OH)3] is formed in pure water and wash coating with gamma-Al2O3 for supporting a catalyst is carried out. A catalyst carrier having satisfactory workability and performance is obtd. without using Al-rich stock which increases the cost of the carrier because it is difficult to roll.

79. 发明专利

JPH02118072A VACUUM DEPOSITION DEVICE 失效
公开(公告)号：JPH02118072A
公开(公告)日：1990-05-02
申请号：JP27094288
申请日：1988-10-28
申请人： MITSUBISHI HEAVY IND LTD
发明人： TAGUCHI TOSHIO , HOSHI YOUNOSUKE , KOBAYASHI TOSHIRO , OKITA HAJIME , KAMIKAWA SUSUMU
IPC分类号： C23C14/56
摘要： PURPOSE:To enable vapor depositing operation in a long time by arranging a network vessel equipping a feeder with vapor depositing material introduced thereinto to the side face of a cooling roll with a flexible base plate wound thereon in a vapor deposition chamber and heating the vapor depositing material in the case of vapor-depositing sublimable substance such as inorganic material and high-m.p. metal on the surface of the flexible base plate. CONSTITUTION:In the case of vapor-depositing sublimable substance consisting of both high-m.p. metal such as Ti and inorganic material such as SixOy on the surface of a flexible base plate 1 such as a plastic film, paper and a steel strip, the flexible base plate 1 is supplied into a vacuum deposition chamber 2 via a vacuum sealing chamber 13 evacuated and vacuumized with an exhaust pump unit 11. This base plate 1 is wound on a rotating cooling roll 4 and moved. A network vessel 9 with sublimable vapor depositing material 8 introduced thereinto is arranged to the side face of the cooling roll 4 and heated with a heater 10 to sublimate the material 8. The vapor- deposited film of sublimate vapor depositing material is formed on the surface of the base material 1 wound on the cooling roll 4. The vapor depositing material is supplied to the network vessel 9 from a feeder 12 with large amounts of material 8 introduced thereinto and therefore vapor depositing operation is enabled in a long time.

80. 发明专利

JPH01246359A INDUCTION-HEATED CRUCIBLE 失效
公开(公告)号：JPH01246359A
公开(公告)日：1989-10-02
申请号：JP7350888
申请日：1988-03-28
申请人： MITSUBISHI HEAVY IND LTD
发明人： KOBAYASHI TOSHIRO , NAGAI NAOYUKI
IPC分类号： C23C14/24
摘要： PURPOSE:To obtain the title induction-heated crucible capable of moving impurities on the surface of a material to be vaporized to its periphery and reducing the amt. of splash by lowering the induction heating frequency for energizing the induction heating coil for the crucible, and providing a splash preventing cover on the upper end of the crucible wall. CONSTITUTION:The induction coil 5 is energized by the induction heating frequency at

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