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    • 75. 发明申请
    • Method and apparatus for reviewing defects
    • 检查缺陷的方法和装置
    • US20050122508A1
    • 2005-06-09
    • US10975450
    • 2004-10-29
    • Sachio UtoYoshimasa OhshimaMinori NoguchiToshiei Kurosaki
    • Sachio UtoYoshimasa OhshimaMinori NoguchiToshiei Kurosaki
    • G01N21/956G01N23/225G01N21/88
    • H01J37/226G01N21/956G01N23/2251H01J2237/2482
    • The present invention provides an apparatus capable of, and a method for, inspecting at high speed and with high accuracy the super minute foreign particles and pattern defects occurring during device-manufacturing processes in which circuit patterns are to be formed on a sample such as a substrate of semiconductor devices and other elements: in the invention, the sample is illuminated in a dark field from multiple directions each of a different incident angle, the light scattered from the sample during the dark-field illumination is detected in each of the multiple directions, and the signals obtained by detecting the scattered light in each direction; thus, defects present on the surface of an optically transparent film of the sample, and defects present in or under the transparent film are discriminated from each other and both types of defects are discriminatively reviewed using a scanning electron microscope.
    • 本发明提供了一种能够以高精度,高精度地检查在器件制造过程中发生的超微小异物和图案缺陷的装置,其中电路图形将被形成在诸如 半导体器件的衬底和其他元件:在本发明中,样品在来自不同入射角的多个方向的暗场中照射,在暗场照明期间从样品散射的光在多个方向中的每一个中被检测 以及通过检测各方向的散射光而获得的信号; 因此,存在于样品的光学透明膜的表面上的缺陷以及存在于透明膜中或其下的缺陷彼此区分,并且使用扫描电子显微镜来区分地区分两种类型的缺陷。
    • 77. 发明授权
    • Method and apparatus for detecting defects
    • 检测缺陷的方法和装置
    • US07643139B2
    • 2010-01-05
    • US11206209
    • 2005-08-18
    • Yoshimasa OhshimaMinori NoguchiHiroyuki Nakano
    • Yoshimasa OhshimaMinori NoguchiHiroyuki Nakano
    • G01N21/00
    • G01N21/9505G01N21/47G01N21/94G01N21/9501
    • An inspection apparatus projects a laser beam on the surface of a SOI wafer and detects foreign matter on and defects in the surface of the SOI wafer by receiving scattered light reflected from the surface of the SOI wafer. The wavelength of the laser beam used by the inspection apparatus is determined so that a penetration depth of the laser beam in a Si thin film may be 10 nm or below to detect only foreign matter on and defects in the outermost surface and not to detect foreign matter and defects in a BOX layer. Only the foreign matter on and defects in the outermost surface layer can be detected without being influenced by thin-film interference by projecting the laser beam on the surface of the SOI wafer and receiving scattered light rays.
    • 检查装置将激光束投射在SOI晶片的表面上,通过接收从SOI晶片的表面反射的散射光来检测SOI晶片的异物和表面的缺陷。 确定检查装置使用的激光束的波长,使得Si薄膜中的激光束的穿透深度可以为10nm以下,仅检测异物和最外表面的缺陷,并且不检测外部 BOX层的物质和缺陷。 只有通过将激光束投射在SOI晶片的表面上并且接收散射光线,才能够检测出最外层的异物和缺陷,而不受薄膜干涉的影响。