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    • 71. 发明授权
    • Complementary field effect transistor
    • 互补场效应晶体管
    • US5072267A
    • 1991-12-10
    • US544206
    • 1990-06-26
    • Masayuki Hattori
    • Masayuki Hattori
    • H01L29/78H01L21/8238H01L27/092
    • H01L27/0925H01L29/0878H01L29/7801H01L29/7816
    • Complementary field effect transistors are provided wherein double-diffusion MOS FETs including an N-channel and a P-channel are formed on one and the same semiconductor substrate. These two channels are respectively formed in well base regions having the same conductivity type, the well base regions being spaced from each other. A double diffusion P-channel MOS FET has drain regions of the conductivity type which is opposite to the conductivity of a well base region, adjoining a base region of the same conductivity type as the well base region. The P-channel is formed to have a thickness which is less than the thickness of the base region, to thereby realize a diffusion P-channel MOS FET having a short channel.
    • 提供互补场效应晶体管,其中包括N沟道和P沟道的双扩散MOS FET形成在同一半导体衬底上。 这两个通道分别形成在具有相同导电类型的阱基区域中,阱基区域彼此间隔开。 双扩散P沟道MOS FET具有与阱基区域的导电性相反的导电类型的漏极区域,与阱基区域相同的导电类型的基极区域相邻。 P沟道形成为具有小于基极区域的厚度的厚度,从而实现具有短沟道的扩散P沟道MOS FET。
    • 73. 发明授权
    • Reference voltage generating circuit in a DC power supply
    • 直流电源中的基准电压发生电路
    • US4321525A
    • 1982-03-23
    • US109118
    • 1980-01-02
    • Ryoji ImazekiMasayuki HattoriShigeo Nakamura
    • Ryoji ImazekiMasayuki HattoriShigeo Nakamura
    • G05F1/56G05F1/46G05F1/64
    • G05F1/468
    • A reference voltage generating circuit in a DC power supply includes a differential amplifier for detecting a difference voltage between a reference voltage and the output voltage, and a voltage control circuit which is responsive to an output signal from the differential amplifier so as to control the DC power supply output voltage to limit the difference between the output voltage and the reference voltage to zero. More specifically, the reference voltage generating circuit includes a reference voltage source, a first variable resistor connected in parallel with the reference voltage source, a second variable resistor connected to the negative side of the reference voltage source, a third variable resistor connected to the positive side of the reference voltage source, and a switching circuit for connecting a movable contact piece of the first variable resistor to either the second or third variable resistors, or to neither of them. A predetermined voltage of a magnitude greater than, equal to or less than a rated value can be delivered as a reference voltage at the movable contact piece of the first variable resistor by selecting from a plurality of preadjusted voltage divider circuits using a single selection operation.
    • 直流电源中的参考电压产生电路包括用于检测参考电压和输出电压之间的差分电压的差分放大器,以及响应于来自差分放大器的输出信号以控制DC的电压控制电路 电源输出电压将输出电压和参考电压之间的差值限制为零。 更具体地,参考电压产生电路包括参考电压源,与参考电压源并联连接的第一可变电阻器,连接到参考电压源负侧的第二可变电阻器,连接到正电压源的第三可变电阻器 参考电压源的一侧,以及用于将第一可变电阻器的可动接触片连接到第二或第三可变电阻器的切换电路,或者它们中的任何一个。 可以通过使用单次选择操作从多个预调节分压器电路中选择大于等于或小于额定值的预定电压作为第一可变电阻器的可动接触片处的参考电压。
    • 74. 发明授权
    • Polishing composition and polishing process
    • 抛光组合和抛光工艺
    • US08080476B2
    • 2011-12-20
    • US11832403
    • 2007-08-01
    • Atsunori KawamuraMasayuki Hattori
    • Atsunori KawamuraMasayuki Hattori
    • H01L21/302H01L21/461H01L21/311B24D3/02C09C1/68C09K3/14C09G1/02
    • C09G1/02
    • To provide a polishing composition particularly useful for an application to polish a conductor layer made of copper in a semiconductor wiring process, and a polishing process employing it.A polishing composition comprising an anionic surfactant and a nonionic surfactant, characterized in that the composition is prepared so that the water contact angle of the surface of an object to be polished, after being polished by the composition, would be at most 60°. Particularly, a polishing composition having a pH of from 2 to 9 and comprising at least one anionic surfactant represented by the chemical formula R1-Y1′ or R1-X1-Y1′, wherein R1 is an alkyl group, an alkylphenyl group or an alkenyl group, X1 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and Y1′ is a SO3M1 group or a SO4M1, wherein M1 is a counter ion, a protection film forming agent different from the anionic surfactant, and at least one nonionic surfactant represented by the chemical formula R2-X2, wherein R2 is an alkyl group, and X2 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and having a HLB value of from 10 to 16.
    • 提供一种特别适用于在半导体布线工艺中抛光由铜制成的导体层的抛光组合物和使用该抛光组合物的抛光工艺。 一种包含阴离子表面活性剂和非离子表面活性剂的抛光组合物,其特征在于,所述组合物被制备成使得被组合物抛光后待抛光对象表面的水接触角最多为60°。 特别是,具有pH为2〜9的包含至少一种由化学式R1-Y1'或R1-X1-Y1'表示的阴离子表面活性剂的抛光组合物,其中R1是烷基,烷基苯基或烯基 基团,X1是聚氧乙烯基团,聚氧丙烯基团或聚(氧化乙烯 - 氧化丙烯)基团,Y1'是SO3M1基团或SO4M1,其中M1是抗衡离子,不同于阴离子表面活性剂的保护膜形成剂, 和由化学式R2-X2表示的至少一种非离子表面活性剂,其中R2是烷基,X2是聚氧乙烯基,聚氧丙烯基或聚(氧乙烯 - 氧丙烯)基,HLB值为10 到16岁。
    • 75. 发明授权
    • Decoding method and device for decoding linear code
    • 解码方法和解码线性码的装置
    • US07607063B2
    • 2009-10-20
    • US10523452
    • 2004-05-28
    • Atsushi KikuchiMasayuki HattoriToshiyuki MiyauchiKazuo WatanabeMakiko Kan
    • Atsushi KikuchiMasayuki HattoriToshiyuki MiyauchiKazuo WatanabeMakiko Kan
    • H03M13/00
    • H03M13/2906G11B20/18G11B20/1866G11B2020/1836H03M13/1111H03M13/1191H03M13/15H03M13/1515H03M13/152H03M13/2936
    • The present invention relates to a decoding method and a decoder, a program, a recording-and-reproducing apparatus and a method, and a reproducing apparatus and a method that are suitable for decoding encoded data encoded by using a linear code on ring R. A low-density processing unit performs parity-check-matrix low-density processing, performs linear combination for rows of a parity check matrix included in an obtained reception word, and generates a parity check matrix according to the linear-combination result, thereby reducing the density of the parity check matrix used for decoding, at step S21. Then, at step S22, an LDPC decoding unit performs decoding by using a sum product algorithm (SPA) by using the parity check matrix whose density is reduced through the processing performed at step S21. Where the processing at step S22 is finished, the LDPC decoding unit finishes decoding for the reception word. The present invention can be used for an error-correction system.
    • 本发明涉及适用于对通过使用环R上的线性码编码的编码数据进行解码的解码方法和解码器,程序,记录和再现装置和方法以及再现装置和方法。 低密度处理单元进行奇偶校验矩阵低密度处理,对获得的接收字中包含的奇偶校验矩阵的行进行线性组合,并根据线性组合结果生成奇偶校验矩阵,从而减少 在步骤S21中用于解码的奇偶校验矩阵的密度。 然后,在步骤S22,LDPC解码单元通过使用通过在步骤S21执行的处理而减小密度的奇偶校验矩阵,通过使用和积算法(SPA)进行解码。 在步骤S22的处理完成的情况下,LDPC解码单元完成对接收字的解码。 本发明可以用于纠错系统。
    • 76. 发明申请
    • POLISHING COMPOSITION AND POLISHING PROCESS
    • 抛光组合物和抛光工艺
    • US20080032505A1
    • 2008-02-07
    • US11832403
    • 2007-08-01
    • Atsunori KawamuraMasayuki Hattori
    • Atsunori KawamuraMasayuki Hattori
    • C09G1/04H01L21/302
    • C09G1/02
    • To provide a polishing composition particularly useful for an application to polish a conductor layer made of copper in a semiconductor wiring process, and a polishing process employing it. A polishing composition comprising an anionic surfactant and a nonionic surfactant, characterized in that the composition is prepared so that the water contact angle of the surface of an object to be polished, after being polished by the composition, would be at most 60°. Particularly, a polishing composition having a pH of from 2 to 9 and comprising at least one anionic surfactant represented by the chemical formula R1-Y1′ or R1-X1-Y1′, wherein R1 is an alkyl group, an alkylphenyl group or an alkenyl group, X1 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and Y1′ is a SO3M1 group or a SO4M1, wherein M1 is a counter ion, a protection film forming agent different from the anionic surfactant, and at least one nonionic surfactant represented by the chemical formula R2-X2, wherein R2 is an alkyl group, and X2 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and having a HLB value of from 10 to 16.
    • 提供一种特别适用于在半导体布线工艺中抛光由铜制成的导体层的抛光组合物和使用该抛光组合物的抛光工艺。 一种包含阴离子表面活性剂和非离子表面活性剂的抛光组合物,其特征在于,所述组合物被制备成使得被组合物抛光后待抛光对象表面的水接触角最多为60°。 特别是,具有pH为2〜9的包含至少一种由化学式R1-Y1'或R1-X1-Y1'表示的阴离子表面活性剂的抛光组合物,其中R1是烷基,烷基苯基或烯基 基团,X1是聚氧乙烯基团,聚氧丙烯基团或聚(氧乙烯 - 氧丙烯基团),Y 1'是SO 3 M 1基团或SO 4 M 1, 其中M1是抗衡离子,不同于阴离子表面活性剂的保护膜形成剂和至少一种由化学式R2-X2表示的非离子表面活性剂,其中R2是烷基,X2是聚氧乙烯基团,聚氧丙烯基团 或聚(氧乙烯 - 氧丙烯)基,HLB值为10〜16。
    • 78. 发明授权
    • Image processing and inspection system
    • 图像处理和检测系统
    • US07145595B2
    • 2006-12-05
    • US10399869
    • 2002-08-28
    • Toshiki YamaneMasayuki HattoriJun NishijimaOsamu IijimaYoshinori Koizumi
    • Toshiki YamaneMasayuki HattoriJun NishijimaOsamu IijimaYoshinori Koizumi
    • H04N7/18
    • G01N21/89G06T7/0002G06T7/0004G06T2200/24G06T2207/30164
    • An image processing and inspection system includes a master device (10) having a video camera (40) and a first controller (20) responsible for processing and inspecting the image of an object (1) in accordance with inspection criteria. Intercommunicated (12) with the master device (10) is a personal computer (100) equipped with a second monitor (120), and a second input member (102,104). The motion-picture taken by the camera (40) for inspection on the side of the master device (10) is transmitted to the computer (100) so as to be displayed on the second monitor (120) as a real-time image of the object (1) for easy confirmation of the object on the side of the computer (100), thereby enabling to determine the inspection criteria on the side of the computer (100) while monitoring the real-time image of the object (1).
    • 图像处理和检查系统包括具有摄像机(40)的主设备(10)和负责根据检查标准处理和检查对象(1)的图像的第一控制器(20)。 与主设备(10)的互通(12)是配备有第二监视器(120)的个人计算机(100)和第二输入构件(102,104)。 由摄像机(40)拍摄的用于在主装置(10)侧检查的运动图像被发送到计算机(100),以便在第二监视器(120)上显示为实时图像 所述物体(1)用于容易地确认所述计算机(100)侧的物体,由此能够在监视所述物体(1)的实时图像的同时,确定所述计算机(100)侧的检查标准, 。