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71. 发明申请

US20130009323A1 INTERCONNECT STRUCTURE AND METHOD OF FABRICATING 有权
标题翻译：互连结构和制作方法
公开(公告)号：US20130009323A1
公开(公告)日：2013-01-10
申请号：US13613890
申请日：2012-09-13
申请人： Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran
发明人： Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran
IPC分类号： H01L23/48
CPC分类号： H01L23/5329 , G03F7/0035 , G03F7/40 , H01L21/02123 , H01L21/02282 , H01L21/0234 , H01L21/3105 , H01L21/311 , H01L21/743 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material.
摘要翻译：提供一种互连结构，其包括半导体衬底; 图案化和固化的光致抗蚀剂，其中光致抗蚀剂含有低k电介质替代物，并且在其顶部和侧壁表面上包含形成通孔或沟槽的强化层; 以及通孔或沟槽中的导电填充材料。还提供了一种用于制造互连结构的方法，其包括在半导体衬底上沉积光致抗蚀剂，其中光致抗蚀剂含有低k电介质成分; 将光刻胶成像曝光于光化辐射; 然后在光致抗蚀剂中形成通孔或沟槽的图案; 表面强化通孔或沟槽的图案，证明通孔或沟槽的顶部和侧壁上的强化层; 固化通孔或沟槽的图案，从而将光致抗蚀剂转化为电介质; 并用导电填充材料填充通孔和沟槽。

72. 发明授权

US08125618B2 Reflective film interface to restore transverse magnetic wave contrast in lithographic processing 有权
标题翻译：反光膜界面，以恢复光刻处理中的横向磁波对比度
公开(公告)号：US08125618B2
公开(公告)日：2012-02-28
申请号：US12208358
申请日：2008-09-11
申请人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
发明人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
IPC分类号： G03F7/20
CPC分类号： G03F7/70216
摘要： A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.
摘要翻译：一种用于将抗蚀剂层暴露于包括反射成像工具辐射的层的图像和在反射层上具有光敏区域的抗蚀剂层的系统。成像工具将包含空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂并反射回抗蚀剂，以形成通过抗蚀剂层厚度的投影空间图像的干涉图案。光敏层的抗蚀剂层区域的厚度和位置被选择为在干涉图形之中包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除抗蚀剂厚度方向上的干涉图案的较低对比度部分从所述抗蚀剂层区域的光敏性，改善所述抗蚀剂层区域中的空间像的光敏性的对比度。

73. 发明授权

US08124485B1 Molecular spacer layer for semiconductor oxide surface and high-K dielectric stack 失效
标题翻译：用于半导体氧化物表面和高K电介质叠层的分子间隔层
公开(公告)号：US08124485B1
公开(公告)日：2012-02-28
申请号：US13032909
申请日：2011-02-23
申请人： Dario L. Goldfarb , Hemanth N. Jagannathan , Dirk Pfeiffer
发明人： Dario L. Goldfarb , Hemanth N. Jagannathan , Dirk Pfeiffer
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , H01L21/02112 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/76224
摘要： A process for defining a functional area in a semiconductor device comprising a semiconductor substrate contiguous with a gate dielectric layer whose dielectric constant is higher than silicon oxide and an oxide capping layer positioned on the gate dielectric layer that reduces gate leakage comprises applying an organo phosphorous SAM to the oxide capping layer, adhering an organic photoresist layer to the organo phosphorous SAM, defining the functional area by imaging the photoresist layer with a functional area image, developing and removing the functional area image in the photoresist to form a functional area image on the organo phosphorous SAM, and removing the functional area image on the organo phosphorous SAM to form a functional area image on the oxide capping layer. In various embodiments, the gate dielectric layer comprises a HfO2 dielectric layer, the oxide capping layer comprises a La2O3 layer, and the organo phosphorous acid comprises an alkyl phosphonic acid, a carboxylic acid-terminated alkyl phosphonic acid, and mixtures thereof.
摘要翻译：一种用于限定半导体器件中的功能区域的方法，包括与其介电常数高于氧化硅的栅极电介质层邻接的半导体衬底以及位于栅极电介质层上的减少栅极泄漏的氧化物覆盖层的方法包括施加有机磷SAM 将有机光致抗蚀剂层粘合到有机磷SAM上，通过用功能区域图像对光致抗蚀剂层进行成像来限定功能区域，在光致抗蚀剂中显影和去除功能区域图像，以形成功能区域图像有机磷SAM，去除有机磷SAM上的功能区图像，以在氧化物覆盖层上形成功能区图像。在各种实施例中，栅介质层包括HfO 2电介质层，氧化物覆盖层包含La 2 O 3层，有机亚磷酸包括烷基膦酸，羧酸封端的烷基膦酸及其混合物。

74. 发明授权

US07914975B2 Multiple exposure lithography method incorporating intermediate layer patterning 失效
标题翻译：结合中间层图案的多次曝光光刻方法
公开(公告)号：US07914975B2
公开(公告)日：2011-03-29
申请号：US11733412
申请日：2007-04-10
申请人： Sean D. Burns , Allen H. Gabor , Scott D. Halle , Dirk Pfeiffer
发明人： Sean D. Burns , Allen H. Gabor , Scott D. Halle , Dirk Pfeiffer
IPC分类号： G03F7/26
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method of patterning a semiconductor substrate includes creating a first set of patterned features in a first inorganic layer; creating a second set of patterned features in one of the first inorganic layer and a second inorganic layer; and transferring, into an organic underlayer, both the first and second sets of patterned features, wherein the first and second sets of patterned features are combined into a composite set of patterned features that are transferable into the substrate by using the organic underlayer as a mask.
摘要翻译：图案化半导体衬底的方法包括在第一无机层中形成第一组图案化特征; 在所述第一无机层和第二无机层之一中产生第二组图案特征; 以及将第一组和第二组图案特征转移到有机底层中，其中第一组和第二组图案化特征被组合成通过使用有机底层作为掩模可转移到衬底中的图案化特征的复合组合。

75. 发明授权

US07879717B2 Polycarbosilane buried etch stops in interconnect structures 有权
标题翻译：聚碳硅烷掩埋蚀刻在互连结构中停止
公开(公告)号：US07879717B2
公开(公告)日：2011-02-01
申请号：US12140854
申请日：2008-06-17
申请人： Elbert E. Huang , Kaushik A. Kumar , Kelly Malone , Dirk Pfeiffer , Muthumanickam Sankarapandian , Christy S. Tyberg
发明人： Elbert E. Huang , Kaushik A. Kumar , Kelly Malone , Dirk Pfeiffer , Muthumanickam Sankarapandian , Christy S. Tyberg
IPC分类号： H01L21/00
CPC分类号： H01L21/76801 , H01L21/76807 , H01L21/76828 , H01L21/76829 , H01L21/76835 , Y10S438/97
摘要： Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SivNwCxOyHz, where 0.05≦v≦0.8, 0≦w≦0.9, 0.05≦x≦0.8, 0≦y≦0.3, 0.05≦z≦0.8 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.
摘要翻译：本文描述了具有低介电常数的掩埋蚀刻停止层的互连结构和与产生这种掩埋蚀刻停止层有关的方法。本发明的互连结构包括由具有组成SivNwCxOyHz的聚合物材料构成的掩埋蚀刻停止层，其中0.05和n1E; v和n1E; 0.8,0和n1E; w和n1E;0.9,0.05≤n1E; x和nlE; 0.8,0和nlE; y＆nlE; 0.3,0.05＆对于v + w + x + y + z = 1，z＆nlE; 0.8。位于所述掩埋蚀刻停止层正下方的通孔层间电介质; 位于所述掩埋蚀刻停止层正上方的线级层间电介质; 以及导电穿过所述通孔级电介质，所述线级电介质和所述掩埋蚀刻停止层的金属特征。

76. 发明授权

US07764502B2 Control device, in particular in the form of an electric switch for electric handtools 有权
标题翻译：控制装置，特别是用于电手动工具的电开关的形式
公开(公告)号：US07764502B2
公开(公告)日：2010-07-27
申请号：US12365945
申请日：2009-02-05
申请人： Tino Erb , Dirk Pfeiffer , Klaus Fiederer
发明人： Tino Erb , Dirk Pfeiffer , Klaus Fiederer
IPC分类号： H05K7/20
CPC分类号： H01H9/06 , B25F5/008 , H01H9/52 , H01H2009/523
摘要： A control device, in particular an electrical switch for use for an electrical tool such as a rechargeable-battery and/or plug-powered electrical tool having an electric motor. The switch has a housing for holding at least one heat-generating component such as a power transistor, a MOSFET, a triac or the like, which is arranged in particular in an electrical circuit arrangement which, for example, is used for open-loop and/or closed-loop control of the electric motor by appropriate open-loop and/or closed-loop control of the electrical load current flowing through the component to the electric motor. A means for thermal conduction is connected on the one hand to the housing of the electrical switch, and/or to the heat-generating component, in particular to the power semiconductor which is located in the housing, and on the other hand to a cooled area which is associated with the switch.
摘要翻译：一种控制装置，特别是用于诸如具有电动机的可再充电电池和/或插头式电动工具的电动工具的电气开关。开关具有用于保持至少一个发热部件的壳体，例如功率晶体管，MOSFET，三端双向可控硅开关元件等，其特别地布置在诸如用于开环的电路布置中和/或电动机的闭环控制，通过适当的开环和/或闭环控制流过该部件的电动负载电流到电动机。一方面，用于热传导的装置一方面连接到电气开关的壳体和/或与发热部件，特别是与位于壳体中的功率半导体相连接，另一方面连接到冷却与开关相关联的区域。

77. 发明授权

US07736841B2 Reflective film interface to restore transverse magnetic wave contrast in lithographic processing 有权
标题翻译：反光膜界面，以恢复光刻处理中的横向磁波对比度
公开(公告)号：US07736841B2
公开(公告)日：2010-06-15
申请号：US12233245
申请日：2008-09-18
申请人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
发明人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
IPC分类号： G03F7/26
CPC分类号： G03F7/70216
摘要： A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.
摘要翻译：一种用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层暴露于对图像的光敏感区域的方法和系统。采用具有反射成像工具辐射的层的基板和在反射层上具有光敏区域的抗蚀剂层，抗蚀剂层具有厚度。成像工具适于将含有空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂层并反射回抗蚀剂层。反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除干涉图形的较低对比度部分从抗蚀剂层区域的光敏剂厚度方向的图案，以提高光敏层的所述抗蚀剂层区域中的空间图像的对比度。

78. 发明授权

US07470504B2 Reflective film interface to restore transverse magnetic wave contrast in lithographic processing 失效
标题翻译：反光膜界面，以恢复光刻处理中的横向磁波对比度
公开(公告)号：US07470504B2
公开(公告)日：2008-12-30
申请号：US11265822
申请日：2005-11-03
申请人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
发明人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
IPC分类号： G03F7/26
CPC分类号： G03F7/70216
摘要： A method for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.
摘要翻译：一种使用高数值孔径成像工具在光刻工艺中将抗蚀剂层暴露于图像的光敏区域的方法。采用具有反射成像工具辐射的层的基板和在反射层上具有光敏区域的抗蚀剂层，抗蚀剂层具有厚度。成像工具适于将含有空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂层并反射回抗蚀剂层。反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除干涉图形的较低对比度部分从抗蚀剂层区域的光敏剂厚度方向的图案，以提高光敏层的所述抗蚀剂层区域中的空间图像的对比度。

79. 发明授权

US07326442B2 Antireflective composition and process of making a lithographic structure 有权
标题翻译：抗反射组合物和制备光刻结构的方法
公开(公告)号：US07326442B2
公开(公告)日：2008-02-05
申请号：US11180788
申请日：2005-07-14
申请人： Katherina E. Babich , Sean D. Burns , Elbert E. Huang , Arpan P. Mahorowala , Dirk Pfeiffer , Karen Temple
发明人： Katherina E. Babich , Sean D. Burns , Elbert E. Huang , Arpan P. Mahorowala , Dirk Pfeiffer , Karen Temple
IPC分类号： G03F7/00 , B32B9/04
CPC分类号： G03F7/091 , Y10T428/31663
摘要： An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.
摘要翻译：一种抗反射组合物和包含硅 - 金属氧化物，衍生自该组合物的抗反射材料的光刻结构。抗反射组合物包含式I的聚合物，其中1≤x≤2; 1 <= y <= 5; 1> = 0; m> 0; n> 0; R是发色团，M是选自IIIB族至VIB族的镧系元素，镧系元素，IIIA族，IVA族除外; L是任选的配体。本发明还涉及制备包括硅 - 金属氧化物，抗反射材料的光刻结构的方法。

80. 发明授权

US07256146B2 Method of forming a ceramic diffusion barrier layer 失效
标题翻译：形成陶瓷扩散阻挡层的方法
公开(公告)号：US07256146B2
公开(公告)日：2007-08-14
申请号：US11128493
申请日：2005-05-13
申请人： Stephan A. Cohen , Stephen McConnell Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
发明人： Stephan A. Cohen , Stephen McConnell Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
IPC分类号： H01L21/31
CPC分类号： H01L21/02282 , H01L21/02126 , H01L21/02222 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , Y10T428/31663 , H01L2924/00
摘要： The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦x≦0.9, 0≦y≦0.7, 0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1
摘要翻译：本发明包括一种互连结构，其中包括在其间形成的金属，层间电介质和陶瓷扩散阻挡层，其中陶瓷扩散阻挡层具有组成为N 其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.01 <= x <= 0.9，对于v + w + x + y + z = 1，0 <= y <= 0.7,0.01 <= z <= 0.8。陶瓷扩散阻挡层用作金属的扩散阻挡层，即铜。本发明还包括用于形成本发明的陶瓷扩散阻挡层的方法，该方法包括沉积具有组合物的组合物的聚合物预陶瓷的步骤其中0.1

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