专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US07643239B2 Controller selection to reduce written-in run-out 有权
标题翻译：控制器选择可减少写入耗尽
公开(公告)号：US07643239B2
公开(公告)日：2010-01-05
申请号：US11789680
申请日：2007-04-25
申请人： Yu Sun , Xiaoping Hu
发明人： Yu Sun , Xiaoping Hu
IPC分类号： G11B21/02 , G11B5/596
CPC分类号： G11B5/59627 , G11B5/59633 , G11B5/59666
摘要： Embodiments of the present invention reduce the written-in run-out in servo data written to a storage medium. A set of servo controllers are evaluated and the controller having the best expected performance among the set is selected and employed. One embodiment of the present invention is a servo controller configured to select and employ a controller having a least amount of expected written-in run-out among a set of controllers. Another embodiment of the present invention is a method comprising a step for applying a set of controllers; and selecting a controller from the set of controllers with a least expected amount of written-in run out. Another embodiment of the present invention is a system comprising a servo controller for employing and selecting a disk controller that has a least expected amount of written-in run-out among a set of controllers.
摘要翻译：本发明的实施例减少写入存储介质的伺服数据的写入跳动。评估一组伺服控制器，并选择并采用具有最佳预期性能的控制器。本发明的一个实施例是一种伺服控制器，被配置为在一组控制器中选择和使用具有最少量的预期写入跳动的控制器。本发明的另一实施例是一种方法，包括：应用一组控制器的步骤; 以及从所述一组控制器中选择具有最少预期的写入用完量的控制器。本发明的另一实施例是一种包括伺服控制器的系统，该伺服控制器用于采用和选择在一组控制器中具有最少预期的写入跳动量的磁盘控制器。

72. 发明授权

US07632749B1 Semiconductor device having a pad metal layer and a lower metal layer that are electrically coupled, whereas apertures are formed in the lower metal layer below a center area of the pad metal layer 有权
标题翻译：具有电耦合的焊盘金属层和下金属层的半导体器件，而在焊盘金属层的中心区域下方的下金属层中形成孔
公开(公告)号：US07632749B1
公开(公告)日：2009-12-15
申请号：US10823970
申请日：2004-04-13
申请人： Hiroyuki Ogawa , Yider Wu , Nian Yang , Kuo-Tung Chang , Yu Sun
发明人： Hiroyuki Ogawa , Yider Wu , Nian Yang , Kuo-Tung Chang , Yu Sun
IPC分类号： H01L21/44
CPC分类号： H01L21/76816 , H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05554 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/14
摘要： A semiconductor device is disclosed and provided. The semiconductor device includes a pad metal layer having a perimeter area and a center area. Further, the semiconductor device has a lower metal layer having a plurality of apertures below the center area of the pad metal layer. Moreover, an interlayer dielectric is formed between the pad metal layer and the lower metal layer. In an embodiment, the semiconductor device also includes a plurality of vias formed in the interlayer dielectric. The vias electrically couple the pad metal layer and the lower metal layer. Additionally, the vias are located below the perimeter area of the pad metal layer.
摘要翻译：公开并提供了半导体器件。半导体器件包括具有周边区域和中心区域的焊盘金属层。此外，半导体器件具有在焊盘金属层的中心区域下方具有多个孔的下部金属层。此外，在焊盘金属层和下金属层之间形成层间电介质。在一个实施例中，半导体器件还包括形成在层间电介质中的多个通孔。通孔电连接焊盘金属层和下部金属层。另外，通孔位于垫金属层的周边区域的下方。

73. 发明申请

US20090290263A1 Piezoelectric element and manufacturing method thereof, head gimbal assembly, and disk drive device with the same 失效
标题翻译：压电元件及其制造方法，磁头万向架组件和具有该磁盘驱动装置的磁盘驱动装置
公开(公告)号：US20090290263A1
公开(公告)日：2009-11-26
申请号：US12153618
申请日：2008-05-21
申请人： MingGao Yao , Yu Sun
发明人： MingGao Yao , Yu Sun
IPC分类号： G11B5/56 , B32B38/10
CPC分类号： G11B5/5552 , Y10T29/42
摘要： A piezoelectric element comprises a first laminated structure body and a second laminated structure body. Side surfaces of the first and the second laminated structure bodies that are parallel to a laminating direction both have at least a portion etched to form a recess so that a step distance is formed between sides of the two adjacent electrode layers that are parallel to the laminating direction. The design of the step distance of the present invention increases insulation resistance between the two adjacent electrode layers on the opposite surfaces of the piezoelectric layer, lowers reject rate, and reduce manufacture cost. The first and the second laminated structure bodies are symmetrically laminated and bonded together, thus optimizing force balancing performance. The recess of the first and second laminated structure body may be filled with insulation resin, which also increases insulation resistance between the two adjacent electrode layers of the piezoelectric layer. The present invention also discloses a method of manufacturing a PZT element, a HGA with the PZT element and a disk drive unit having such HGA.
摘要翻译：压电元件包括第一层叠结构体和第二层叠结构体。与层叠方向平行的第一层叠结构体和第二层叠结构体的侧面均具有至少一部分被蚀刻以形成凹部，从而在平行于层叠的两个相邻的电极层的侧面之间形成台阶距离方向。本发明的台阶距离的设计提高了在压电层的相对表面上的两个相邻电极层之间的绝缘电阻，降低了废品率，并降低了制造成本。第一和第二层压结构体对称地层压在一起，从而优化力平衡性能。第一和第二层叠结构体的凹部可以填充绝缘树脂，这也增加了压电层的两个相邻电极层之间的绝缘电阻。本发明还公开了一种制造PZT元件的方法，具有PZT元件的HGA和具有这种HGA的盘驱动单元。

74. 发明授权

US07619846B2 Self-servo writing using staged patterning 有权
标题翻译：自动伺服写入使用分段图案
公开(公告)号：US07619846B2
公开(公告)日：2009-11-17
申请号：US11750767
申请日：2007-05-18
申请人： Stan Shepherd , S. Craig Smith , Yu Sun
发明人： Stan Shepherd , S. Craig Smith , Yu Sun
IPC分类号： G11B21/02
CPC分类号： G11B5/59644
摘要： An apparatus and method for servo writing are disclosed. The method includes writing of first servo data to a medium, detecting a velocity integrated position of the first servo data, and writing second servo data in relation to the detected position of the first servo data.
摘要翻译：公开了一种用于伺服写入的装置和方法。该方法包括将第一伺服数据写入介质，检测第一伺服数据的速度积分位置，以及相对于检测到的第一伺服数据的位置写入第二伺服数据。

75. 发明申请

US20090256242A1 METHOD OF FORMING AN ELECTRONIC DEVICE INCLUDING FORMING A CHARGE STORAGE ELEMENT IN A TRENCH OF A WORKPIECE 有权
标题翻译：形成电子装置的方法，包括在工作台的形式中形成充电储存元件
公开(公告)号：US20090256242A1
公开(公告)日：2009-10-15
申请号：US12102488
申请日：2008-04-14
申请人： Suketu Arun Parikh , Olov B. Karlsson , Yu Sun , Shankar Sinha , Timothy Thurgate
发明人： Suketu Arun Parikh , Olov B. Karlsson , Yu Sun , Shankar Sinha , Timothy Thurgate
IPC分类号： H01L21/425 , H01L23/58
CPC分类号： H01L27/11568 , H01L21/26586 , H01L27/115 , H01L29/1041 , H01L29/66666 , H01L29/7827
摘要： A method of forming an electronic device including forming a first trench in a workpiece including a substrate, the first trench having side walls and a bottom surface extending for a width between the side walls and forming a charge-storage layer along the side walls and bottom surface of the first trench. The method further includes implanting ions within the substrate underlying the bottom surface of the first trench to form an implant region and annealing the implant region, wherein after annealing, the implant region extends the width of the bottom surface and along a portion of the side walls.
摘要翻译：一种形成电子器件的方法，包括在包括衬底的工件中形成第一沟槽，所述第一沟槽具有侧壁和在所述侧壁之间延伸宽度的底表面，并且沿着所述侧壁和底部形成电荷存储层第一沟槽的表面。该方法还包括在第一沟槽的底表面下方的衬底内注入离子以形成植入区域并退火植入区域，其中在退火之后，植入区域延伸底表面的宽度并沿着侧壁的一部分。

76. 发明申请

US20090080114A1 Head gimbal assembly, flexible printed cable, head stack assembly, and disk drive unit with the same 审中-公开
标题翻译：头万向节组件，柔性印刷电缆，磁头组合组件和磁盘驱动器组件
公开(公告)号：US20090080114A1
公开(公告)日：2009-03-26
申请号：US11902412
申请日：2007-09-21
申请人： Ming Gao Yao , Yu Sun , Yiru Xie
发明人： Ming Gao Yao , Yu Sun , Yiru Xie
IPC分类号： G11B5/48
CPC分类号： G11B5/4846 , G11B5/4853
摘要： A head gimbal assembly comprises a micro-actuator and a suspension. The suspension provides a single channel electrically connecting a bonding terminal of the suspension with the micro-actuator for controlling the movement of the micro-actuator. Thus the head gimbal assembly has a simple layout of a single channel to control the micro-actuator. The present invention also discloses a head gimbal assembly avoiding the occurrence of cross-talk, a flexible printed cable utilizing a common voltage lead to reduce its size, a head stack assembly with alternately arranged and stacked head gimbal assemblies which reduces or even prevents suspension and arm vibration resonance as well as avoids sliders from off-track and out of TMR budget, and a disk drive unit with such head stack assembly.
摘要翻译：头万向架组件包括微致动器和悬架。悬架提供单个通道，电连接悬架的接合端子和微致动器，用于控制微致动器的移动。因此，头部万向节组件具有单个通道的简单布局以控制微致动器。本发明还公开了避免串扰发生的头部万向架组件，利用公共电压引线减小其尺寸的柔性印刷电缆，具有交替排列和堆叠的磁头万向架组件的磁头堆叠组件，其减少甚至防止悬架和臂振动共振，以及避免滑块偏离轨道和TMR预算，以及具有这种头部堆叠组件的磁盘驱动单元。

77. 发明申请

US20080221335A1 Method for the Manufacture of Substituted Phosphanes, and Substituted Phosphanes Manufactured According to Said Method 失效
标题翻译：根据所述方法制造取代的膦的制造方法和取代的膦
公开(公告)号：US20080221335A1
公开(公告)日：2008-09-11
申请号：US11666317
申请日：2005-10-17
申请人： Werner Thiel , Yu Sun , Antje Hienzsch
发明人： Werner Thiel , Yu Sun , Antje Hienzsch
IPC分类号： C07F9/6503
CPC分类号： C07F9/6512 , C07F9/65031
摘要： The invention relates to a method for the manufacture of substituted phosphanes and substituted phosphanes manufactured according to the method. Phosphanes, phosphane oxides, sulfides or selenides are used as ligands in coordination compounds. They play a central role in controlling the activity and selectivity of catalysts. The object is achieved by the invention by synthesizing heterocyclic substituents on aromatic groups by introducing acetyl groups. In this manner, previously unknown representatives of the families of phosphanes, phosphane oxides, sulfides and selenides are made accessible.
摘要翻译：本发明涉及根据该方法制造取代的膦和取代的磷烷的方法。膦配位化合物中使用膦，氧化膦，硫化物或硒化物作为配位体。它们在控制催化剂的活性和选择性方面起核心作用。本发明的目的是通过引入乙酰基合成芳族基团上的杂环取代基。以这种方式，可以使得先前未知的磷烷，磷烷氧化物，硫化物和硒化物族的代表。

78. 发明授权

US07414809B2 Servo writing using radially overlapped servo segments 有权
标题翻译：伺服写入使用径向重叠的伺服段
公开(公告)号：US07414809B2
公开(公告)日：2008-08-19
申请号：US11750820
申请日：2007-05-18
申请人： S. Craig Smith , Stan Shepherd , Yu Sun , Yuan Roy Chen , Lin Guo
发明人： S. Craig Smith , Stan Shepherd , Yu Sun , Yuan Roy Chen , Lin Guo
IPC分类号： G11B5/596
CPC分类号： G11B5/59633 , G11B5/59661 , G11B5/59666
摘要： In accordance with various embodiments, initial servo data are written to a storage medium as a series of radially overlapped spiral segments. Final servo data are thereafter written to the medium while concurrently servoing on said overlapped segments.
摘要翻译：根据各种实施例，初始伺服数据作为一系列径向重叠的螺旋段被写入存储介质。最后伺服数据此后被写入介质，同时在所述重叠段上进行伺服。

79. 发明申请

US20080077329A1 HIGH-THROUGHPUT AUTOMATED CELLULAR INJECTION SYSTEM AND METHOD 有权
标题翻译：高通自动化细胞注射系统及方法
公开(公告)号：US20080077329A1
公开(公告)日：2008-03-27
申请号：US11678608
申请日：2007-02-25
申请人： Yu Sun , Wenhui Wang , Xinyu Liu
发明人： Yu Sun , Wenhui Wang , Xinyu Liu
IPC分类号： G01N33/48
CPC分类号： C12M23/50 , C12M35/00 , C12M41/48
摘要： An automated cell injection system and method are described, which can perform automatic, reliable, and high-throughput cell injection of foreign genetic materials, proteins, and other compounds. The system and method overcome the problems inherent in traditional manual injection that is characterized by poor reproducibility, human fatigue, and low throughput. The present invention is particularly suited for zebrafish embryo injection but can be readily extended to other biological injection applications such as mouse embryo, drosophila embryo, and C. elegans injections, capable of facilitating high-throughput genetic research at both academic and industry levels. A novel vacuum based cell-holding device is also provided.
摘要翻译：描述了自动细胞注射系统和方法，其可以执行外来遗传物质，蛋白质和其他化合物的自动，可靠和高通量的细胞注射。该系统和方法克服了传统手动注射固有的问题，其特点是重现性差，人体疲劳和生产能力低。本发明特别适用于斑马鱼胚胎注射，但可以容易地扩展到其他生物注射应用例如小鼠胚胎，果蝇胚和秀丽隐杆线虫注射液，其能够促进学术和工业水平的高通量遗传研究。还提供了一种新颖的基于真空的电池保持装置。

80. 发明授权

US07323726B1 Method and apparatus for coupling to a common line in an array 失效
标题翻译：用于耦合到阵列中的公共线的方法和装置
公开(公告)号：US07323726B1
公开(公告)日：2008-01-29
申请号：US10658882
申请日：2003-09-09
申请人： Kuo-Tung Chang , Yu Sun
发明人： Kuo-Tung Chang , Yu Sun
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11519 , H01L29/7881
摘要： A method and apparatus for coupling to a common line in an array. Gate structures of an integrated circuit are formed. Source and drain regions adjacent to the gate structures are implanted. A source contact from a metal Vss line to a source region is formed. Dopants of the source and drain regions diffuse laterally to overlap. The overlapping diffusion regions conduct and couple the drain region to a source region. Beneficially, the drain region is coupled to the metal Vss line. As a beneficial result, source contacts may be formed along a line of drain contacts in associated rows of drain contacts, and coupled to a common source line via the novel overlapping diffusion regions. A plurality of word lines may be formed without any bending in the word lines to accommodate source contacts that are larger than the source line. Numerous deleterious consequences of bent word lines, for example decreased array density and detrimental electrical behavior of memory cells in the vicinity of bent word lines, may beneficially be overcome by embodiments of the present invention.
摘要翻译：一种用于耦合到阵列中的公共线的方法和装置。形成集成电路的栅极结构。植入与栅极结构相邻的源区和漏区。形成从金属Vss线到源极区的源极接触。源区和漏区的掺杂剂横向扩散以重叠。重叠扩散区域将漏极区域导通并耦合到源极区域。有利地，漏极区域耦合到金属Vss线。作为有益的结果，源触点可以沿相关的漏极触点行中的漏极触点线形成，并且经由新颖的重叠扩散区域耦合到公共源极线。可以形成多个字线，而不会在字线中任何弯曲以适应大于源极线的源极触点。弯曲字线的许多有害后果，例如降低阵列密度，并且在弯曲字线附近的记忆单元的有害电气行为可有利地被本发明的实施例克服。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式