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71. 发明授权

US06546035B2 Semiconductor laser diode array and method of fabricating the same 有权
标题翻译：半导体激光二极管阵列及其制造方法
公开(公告)号：US06546035B2
公开(公告)日：2003-04-08
申请号：US09794085
申请日：2001-02-28
申请人： Osamu Imafuji , Masaaki Yuri
发明人： Osamu Imafuji , Masaaki Yuri
IPC分类号： H01S500
CPC分类号： H01S5/4031 , H01S5/4087
摘要： A semiconductor laser diode array of this invention contains a first laser diode including a first cladding layer of a first conductivity type formed on a substrate, a first active layer formed on the first cladding layer and a second cladding layer of a second conductivity type formed on the active layer; and a second laser diode including a third cladding layer of the first conductivity type formed on the substrate with a space from the first laser diode, a second active layer formed on the third cladding layer and having a larger energy gap than the first active layer and a fourth cladding layer of the second conductivity type formed on the second active layer. The second laser diode further includes a height adjusting buffer layer of the first conductivity type formed between the substrate and the third cladding layer and having a thickness set for placing the second active layer at substantially the same height from the substrate surface as the height from the substrate surface of the first active layer.
摘要翻译：本发明的半导体激光二极管阵列包括：第一激光二极管，包括形成在基板上的第一导电类型的第一包层，形成在第一包层上的第一有源层和形成在第一包层上的第二导电类型的第二包层活性层; 以及第二激光二极管，其包括形成在所述基板上的第一导电类型的第三包层，其具有来自所述第一激光二极管的空间;第二有源层，形成在所述第三包层上并且具有比所述第一有源层更大的能隙; 形成在第二有源层上的第二导电类型的第四覆层。第二激光二极管还包括第一导电类型的高度调节缓冲层，其形成在基板和第三包覆层之间，并且具有设置用于将第二有源层与基板表面基本相同的高度设置的厚度，第一有源层的衬底表面。

72. 发明授权

US06503769B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06503769B2
公开(公告)日：2003-01-07
申请号：US09420722
申请日：1999-10-20
申请人： Shinji Nakamura , Masaaki Yuri , Kenji Orita
发明人： Shinji Nakamura , Masaaki Yuri , Kenji Orita
IPC分类号： H01L2120
CPC分类号： H01L33/32 , H01L33/007 , H01S5/32341
摘要： A semiconductor device includes a substrate, a multi-layer structure provided on the substrate, a first-conductive-type etch stop layer of a III nitride provided on the multi-layer structure, and a second-conductive-type first semiconductor layer of a III nitride provided on the etch stop layer. A molar fraction of Al is lower in a composition of the III nitride included in the first semiconductor layer than in a composition of the III nitride included in the etch stop layer.
摘要翻译：半导体器件包括衬底，设置在衬底上的多层结构，设置在多层结构上的III族氮化物的第一导电型蚀刻停止层和第二导电型第一半导体层，提供在蚀刻停止层上的III族氮化物。包含在第一半导体层中的III族氮化物的组成中的Al的摩尔分数低于蚀刻停止层中包含的III族氮化物的组成。

73. 发明授权

US06292500B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06292500B1
公开(公告)日：2001-09-18
申请号：US09292013
申请日：1999-04-15
申请人： Yasuyuki Kouchi , Hideyuki Nakanishi , Masaaki Yuri , Akio Yoshikawa , Hisanori Ishiguro
发明人： Yasuyuki Kouchi , Hideyuki Nakanishi , Masaaki Yuri , Akio Yoshikawa , Hisanori Ishiguro
IPC分类号： H01S300
CPC分类号： H01S5/042 , H01L2224/48091 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/1305 , H01S5/02248 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device of the present invention includes: a semiconductor laser chip including an anode and a cathode; and a field effect transistor. The anode of the semiconductor laser chip is connected to the drain of the field effect transistor. The gate of the field effect transistor is connected to the drain of the field effect transistor. And the cathode of the semiconductor laser chip is connected to the source of the field effect transistor.
摘要翻译：本发明的半导体激光器件包括：包括阳极和阴极的半导体激光器芯片; 和场效应晶体管。半导体激光芯片的阳极连接到场效应晶体管的漏极。场效应晶体管的栅极连接到场效应晶体管的漏极。并且半导体激光芯片的阴极连接到场效应晶体管的源极。

74. 发明授权

US06197441B1 Cubic nitride semiconductor device and fabrication method of the same 失效
标题翻译：立方氮化物半导体器件及其制造方法
公开(公告)号：US06197441B1
公开(公告)日：2001-03-06
申请号：US09124889
申请日：1998-07-30
申请人： Masaaki Yuri , Tetsuzo Ueda , Takaaki Baba
发明人： Masaaki Yuri , Tetsuzo Ueda , Takaaki Baba
IPC分类号： H01L21203
CPC分类号： C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/0254 , H01L21/02631 , H01L21/02658
摘要： The object of the present invention is to form a cubic nitride semiconductor layer of excellent surface flatness and crystallization on a cubic III-V family compound semiconductor substrate, featuring a fabrication method that comprises the steps of forming a cubic semiconductor layer 2 containing aluminum, nitriding one surface of the semiconductor layer 2 by heating in an atmosphere of a nitrogen compound and then supplying a nitrogen compound and a compound containing III family elements to form a cubic nitride semiconductor layer 3 on the semiconductor layer 2.
摘要翻译：本发明的目的是在立方体III-V族化合物半导体衬底上形成表面平整度和结晶度优异的立方氮化物半导体层，其特征在于包括以下步骤：形成含铝的立方半导体层2，氮化在氮化合物的气氛中加热半导体层2的一个表面，然后在半导体层2上提供氮化合物和含有III族元素的化合物以形成立方氮化物半导体层3。

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