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71. 发明授权

US06668068B2 Image attribute altering device and electronic watermark embedding device 失效
标题翻译：图像属性改变装置和电子水印嵌入装置
公开(公告)号：US06668068B2
公开(公告)日：2003-12-23
申请号：US09313543
申请日：1999-05-14
申请人： Masahiro Hashimoto
发明人： Masahiro Hashimoto
IPC分类号： G06K900
CPC分类号： G06T1/0021 , H04N5/913 , H04N2005/91335
摘要： Image attribute detection means for detecting the attribute of an input image (attribute “A”) and image attribute altering means for altering the image attribute in the input image on the basis of the attribute detection result of the input image are provided to output an output image having a new attribute (attribute “B”). The image attribute detection means includes first DCT means for subjecting the input image to discrete cosine transform to obtain frequency components, second DCT means for subjecting the original image to discrete cosine transform to obtain original frequency components, and means of subtracting the original frequency components from the image frequency components and dividing the subtraction result by the image frequency components to detect the electronic watermark data.
摘要翻译：提供用于检测输入图像的属性（属性“A”）的图像属性检测装置和用于基于输入图像的属性检测结果改变输入图像中的图像属性的图像属性改变装置，以输出输出具有新属性（属性“B”）的图像。图像属性检测装置包括：第一DCT装置，用于对输入图像进行离散余弦变换以获得频率分量;第二DCT装置，用于对原始图像进行离散余弦变换以获得原始频率分量，以及从原始频率分量中减去原始频率分量的装置图像频率分量，并将减法结果除以图像频率分量，以检测电子水印数据。

72. 发明授权

US06424726B2 Image data encoding system and image inputting apparatus 有权
标题翻译：图像数据编码系统和图像输入装置
公开(公告)号：US06424726B2
公开(公告)日：2002-07-23
申请号：US09907256
申请日：2001-07-17
申请人： Hirotaka Nakano , Masahiro Hashimoto , Koji Manabe
发明人： Hirotaka Nakano , Masahiro Hashimoto , Koji Manabe
IPC分类号： G06K900
CPC分类号： H04N19/00 , G06T1/0021 , G06T1/0035 , G06T1/20 , G06T2201/0052 , G06T2201/0053 , H04N1/32154 , H04N1/32165 , H04N1/32187 , H04N1/32192 , H04N1/32277 , H04N19/467 , H04N19/60 , H04N21/23892 , H04N21/8358 , H04N2201/324
摘要： An image data encoding system is disclosed, that comprises a discrete cosine transforming means for discrete-cosine transforming the original image, an electronic watermark data embedding means for embedding the electronic watermark data in the data that has been transformed by the discrete cosine transforming means, and a data selecting means for selecting the output signal of the discrete cosine transforming means or the output signal of the electronic watermark data embedding means. Another image data encoding system is also disclosed, that comprises an electronic watermark embedding means for embedding electronic watermark data selected from a plurality of types of electronic watermark data to the digital image data, wherein at least one of the plurality of types of electronic watermark data is predetermined electronic watermark data that does not affect the digital image data even if the electronic watermark data is embedded in the digital image data.
摘要翻译：公开了一种图像数据编码系统，其包括用于离散余弦变换原始图像的离散余弦变换装置，用于将电子水印数据嵌入已由离散余弦变换装置变换的数据中的电子水印数据嵌入装置，以及数据选择装置，用于选择离散余弦变换装置的输出信号或电子水印数据嵌入装置的输出信号。还公开了另一种图像数据编码系统，其包括用于将从多种类型的电子水印数据中选出的电子水印数据嵌入数字图像数据的电子水印嵌入装置，其中，多种类型的电子水印数据即使将电子水印数据嵌入在数字图像数据中也是不影响数字图像数据的预定电子水印数据。

73. 发明授权

US06298142B1 Image data encoding system and image inputting apparatus 失效
标题翻译：图像数据编码系统和图像输入装置
公开(公告)号：US06298142B1
公开(公告)日：2001-10-02
申请号：US09022885
申请日：1998-02-12
申请人： Hirotaka Nakano , Masahiro Hashimoto , Koji Manabe
发明人： Hirotaka Nakano , Masahiro Hashimoto , Koji Manabe
IPC分类号： G06K900
CPC分类号： H04N19/00 , G06T1/0021 , G06T1/0035 , G06T1/20 , G06T2201/0052 , G06T2201/0053 , H04N1/32154 , H04N1/32165 , H04N1/32187 , H04N1/32192 , H04N1/32277 , H04N19/467 , H04N19/60 , H04N21/23892 , H04N21/8358 , H04N2201/324
摘要： An image data encoding system has a discrete cosine transformer for discrete cosine transforming the original image, an electronic watermark data embedding circuit for embedding the electronic watermark data in the data that has been transformed by the discrete cosine transformer, and a data selector for selecting the output signal of the discrete cosine transformer or the output signal of the electronic watermark data embedding circuit. Another image data encoding system has an electronic watermark embedding circuit for embedding electronic watermark data selected from a plurality of types of electronic watermark data to the digital image data, wherein at least one of the plurality of types of electronic watermark data is predetermined electronic watermark data that does not affect the digital image data even if the electronic watermark data is embedded in the digital image data.
摘要翻译：图像数据编码系统具有用于离散余弦变换原始图像的离散余弦变换器，用于将电子水印数据嵌入到由离散余弦变换器变换的数据中的电子水印数据嵌入电路，以及用于选择离散余弦变换器的输出信号或电子水印数据嵌入电路的输出信号。另一图像数据编码系统具有电子水印嵌入电路，用于将从多种类型的电子水印数据中选出的电子水印数据嵌入到数字图像数据中，其中，多种类型的电子水印数据中的至少一种是预定的电子水印数据即使电子水印数据被嵌入在数字图像数据中也不影响数字图像数据。

74. 发明授权

US4385365A Data shunting and recovering device 失效
标题翻译：数据分流和恢复装置
公开(公告)号：US4385365A
公开(公告)日：1983-05-24
申请号：US10470
申请日：1979-02-08
申请人： Masahiro Hashimoto , Kenichi Wada , Chikahiko Izumi
发明人： Masahiro Hashimoto , Kenichi Wada , Chikahiko Izumi
IPC分类号： G06F9/38 , G06F9/46 , G06F9/48 , G06F9/00 , G06F13/00
CPC分类号： G06F9/461 , G06F9/3863
摘要： A data shunting and recovering device is provided to shunt and hold the data stored in a register and its address before writing the register during a delay period following generation of an interrupt. This data is then restored into the register when an instruction of recovering is given. Therefore, it is allowed to achieve the moderating effects of delaying the stopping of the stage advance in data processing upon generation of an instruction for interruption without loss of data stored in the memory prior to writing during this delay period.
摘要翻译：提供数据分流和恢复装置，用于在产生中断之后的延迟时段期间，在写入寄存器之前分流和保持存储在寄存器中的数据及其地址。当给出恢复指令时，该数据被恢复到寄存器中。因此，在该延迟期间，在写入之前，在生成中断指令的同时，不会丢失存储在存储器中的数据的数据，可以实现延迟数据处理中的数据处理的停止的调节效果。

75. 发明授权

US09469740B2 Carbon-fiber-reinforced plastic and process for producing same 有权
标题翻译：碳纤维增强塑料及其制造方法
公开(公告)号：US09469740B2
公开(公告)日：2016-10-18
申请号：US14122501
申请日：2012-04-18
申请人： Takafumi Hashimoto , Hirohito Minowa , Takashi Shimada , Masahiro Hashimoto , Katsuhiro Miyoshi , Yoshihiro Naruse
发明人： Takafumi Hashimoto , Hirohito Minowa , Takashi Shimada , Masahiro Hashimoto , Katsuhiro Miyoshi , Yoshihiro Naruse
IPC分类号： C08K3/04 , C08J5/04 , B29C70/06 , B29C70/14 , C08J5/24
CPC分类号： C08K3/04 , B29C70/06 , B29C70/14 , C08J5/042 , C08J5/24 , C08J2300/22 , C08J2377/00
摘要： A carbon-fiber-reinforced plastic prepared by impregnating a matrix resin into a sheet-like base material includes discontinuous carbon fibers, wherein a content ratio of carbon fibers having lengths of 10 mm or longer in the base material is 60 wt % or more relative to a total amount of the carbon fibers, and an average value of orientation degrees of carbon fibers contained in the base material is 2-10.
摘要翻译：通过将基质树脂浸渍到片状基材中而制备的碳纤维增强塑料包括不连续的碳纤维，其中基材中长度为10mm以上的碳纤维的含量比例为60重量％以上相对于碳纤维的总量，基材中所含的碳纤维的取向度的平均值为2-10。

76. 发明授权

US09075319B2 Mask blank and transfer mask 有权
标题翻译：面罩空白和转印面膜
公开(公告)号：US09075319B2
公开(公告)日：2015-07-07
申请号：US13260295
申请日：2010-03-30
申请人： Masahiro Hashimoto , Hiroyuki Iwashita , Yasushi Okubo , Osamu Nozawa
发明人： Masahiro Hashimoto , Hiroyuki Iwashita , Yasushi Okubo , Osamu Nozawa
IPC分类号： G03F1/46 , G03F1/50 , G03F1/58
CPC分类号： G03F1/46 , G03F1/50 , G03F1/58
摘要： A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when a DRAM half pitch (hp) is 32 nm or less specified in semiconductor device design specifications. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density is 2.8 or more for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20.
摘要翻译：当半导体器件设计规范规定的DRAM半间距（hp）为32nm以下时，可以克服电磁场（EMF）效应引起的问题的掩模空白和传送掩模。掩模坯料用于制造施加ArF曝光光的转印掩模，并且包括具有多层结构的遮光膜10。多层结构包括形成在透明基板1上的遮光层11和表面防反射层12.在遮光膜10上形成辅助遮光膜20.遮光膜10的厚度为40nm 曝光光的光密度为2.0以上且2.7以下。对于遮光膜10和辅助遮光膜20的多层结构中的曝光，光密度为2.8以上。

77. 发明授权

US08940462B2 Photomask blank, photomask, method of manufacturing the same, and method of manufacturing a semiconductor device 有权
标题翻译：光掩模坯料，光掩模，其制造方法以及半导体装置的制造方法
公开(公告)号：US08940462B2
公开(公告)日：2015-01-27
申请号：US13121851
申请日：2009-09-30
申请人： Masahiro Hashimoto , Atsushi Kominato
发明人： Masahiro Hashimoto , Atsushi Kominato
IPC分类号： G03F1/80 , G03F1/00 , G03F1/54
CPC分类号： G03F1/80 , G03F1/14 , G03F1/54 , G03F1/68
摘要： [Object] A photomask blank for use in producing a photomask for exposure with an ArF excimer laser. The photomask blank is intended to be applied to the 32-nm DRAM half-pitch (hp) and succeeding generations in the semiconductor design rule.[Solution] The photomask blank is for use in producing a photomask to which an exposure light having a wavelength not longer than 200 nm is applied. The photomask blank is characterized by comprising a transparent substrate, a light-shielding film formed on the transparent substrate and containing molybdenum and silicon, and an etching mask film formed directly on the light-shielding film and containing chromium. The photomask blank is further characterized in that the light-shielding film comprises a light-shielding layer and an antireflection layer which have been disposed in this order from the transparent substrate side, the light-shielding layer having a molybdenum content of 9-40 at %, and that the etching mask film has a chromium content of 45 at % or lower.
摘要翻译： [目的]一种用于制造用ArF准分子激光曝光的光掩模的光掩模坯料。光掩模坯料旨在应用于半导体设计规则中的32nm DRAM半间距（hp）和后代。 [解决方案]光掩模坯料用于制造其中施加具有不超过200nm的波长的曝光光的光掩模。光掩模坯料的特征在于包括透明基板，形成在透明基板上并含有钼和硅的遮光膜，以及直接形成在遮光膜上并含有铬的蚀刻掩模膜。光掩模坯料的特征还在于，所述遮光膜包括从透明基板侧依次设置的遮光层和防反射层，所述遮光层的钼含量为9〜40个％，蚀刻掩模膜的铬含量为45原子％以下。

78. 发明授权

US08883022B2 Mask blank and method of manufacturing an imprinting mold 有权
标题翻译：掩模毛坯和制造压印模具的方法
公开(公告)号：US08883022B2
公开(公告)日：2014-11-11
申请号：US13641220
申请日：2011-04-04
申请人： Osamu Nozawa , Masahiro Hashimoto
发明人： Osamu Nozawa , Masahiro Hashimoto
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , G03F7/00 , G11B5/855
CPC分类号： G11B5/855 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0015
摘要： Provided is a mask blank which is used for manufacturing an imprinting mold and which may form a fine mold pattern with high pattern accuracy. A mask blank (10) includes a transparent substrate (1) and a thin film (2) contacted with a surface of the substrate. The thin film (2) includes a laminated film including an upper layer (4) which is composed of a material containing silicon (Si) or a material containing tantalum (Ta), and a lower layer (3) which is composed of a material containing at least one of hafnium (Hf) and zirconium (Zr) and containing substantially no oxygen.
摘要翻译：提供了用于制造压印模具的掩模坯料，并且可以形成具有高图案精度的精细模具图案。掩模板（10）包括透明基板（1）和与基板表面接触的薄膜（2）。薄膜（2）包括层叠膜，该层叠膜包括由含有硅（Si）的材料或含有钽（Ta）的材料构成的上层（4）和由材料构成的下层（3）含有铪（Hf）和锆（Zr）中的至少一种并且基本上不含氧。

79. 发明授权

US08785086B2 Reflective mask blank, method of manufacturing the same, and reflective mask 有权
标题翻译：反光罩，其制造方法和反光罩
公开(公告)号：US08785086B2
公开(公告)日：2014-07-22
申请号：US13812627
申请日：2011-07-29
申请人： Masahiro Hashimoto , Kazunori Ono , Kenta Tsukagoshi , Tooru Fukui
发明人： Masahiro Hashimoto , Kazunori Ono , Kenta Tsukagoshi , Tooru Fukui
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/78 , Y10S430/143
摘要： To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.
摘要翻译：为了解决由于反向散射引起的累积能量的降低的问题，导致当在通常使用的高对比度抗蚀剂用于制造反射掩模时引起的CD线性的降低。用于制造反射掩模的反射掩模坯料包括基板，形成在基板上并适于反射曝光光的多层反射膜，以及形成在多层反射膜上并适于吸收曝光光的吸收膜。在吸收膜上形成用于电子束写入的抗蚀剂膜，并且用于电子束写入的抗蚀剂膜的对比度值γ为30或更小。

80. 发明授权

US08637213B2 Mask blank and transfer mask 有权
标题翻译：面罩空白和转印面膜
公开(公告)号：US08637213B2
公开(公告)日：2014-01-28
申请号：US13384168
申请日：2010-07-14
申请人： Masahiro Hashimoto , Atsushi Kominato , Hiroyuki Iwashita , Osamu Nozawa
发明人： Masahiro Hashimoto , Atsushi Kominato , Hiroyuki Iwashita , Osamu Nozawa
IPC分类号： G03F1/80 , G03F1/50
CPC分类号： G03F1/74 , G03F1/50 , G03F1/54 , G03F1/80
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.
摘要翻译：提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成，硅和选自氧和氮的至少一种或多种元素。在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低到至少确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性，在被照射带电粒子的状态下含有物质。

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