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71. 发明授权

US4150288A Thickness standard sample and method of calibrating gage 失效
标题翻译：厚度标准样品和校准方法
公开(公告)号：US4150288A
公开(公告)日：1979-04-17
申请号：US787440
申请日：1977-04-14
申请人： Akira Inoue , Masanori Takahashi , Masao Kaneko
发明人： Akira Inoue , Masanori Takahashi , Masao Kaneko
IPC分类号： G01N23/223 , G01N23/22
CPC分类号： G01N23/223 , G01N2223/076 , Y10T428/2804
摘要： A thickness standard sample consisting of a base plate and an even thick foil fixed on the base plate. The foil has a uniform standard thickness for calibrating an X-ray fluorescence thickness gauge or the like. The sample is very inexpensive and serves as an excellent uniform thickness standard sample so that an operator may set any point on the sample surface to the calibrating gauge axis.
摘要翻译：厚度标准样品由基板和固定在基板上的均匀厚的箔组成。箔具有用于校准X射线荧光厚度计等的均匀的标准厚度。样品非常便宜，并且用作优异的均匀厚度标准样品，使得操作者可以将样品表面上的任何点设置到校准表轴。

72. 发明授权

US4129778A Method and apparatus for measuring the thickness of a non-metallic coating on a plated metal plate 失效
标题翻译：用于测量镀金属板上非金属涂层厚度的方法和装置
公开(公告)号：US4129778A
公开(公告)日：1978-12-12
申请号：US815019
申请日：1977-07-12
申请人： Akira Inoue , Minori Oka
发明人： Akira Inoue , Minori Oka
IPC分类号： G01B15/02 , G01N23/223 , G01N23/20 , G21K1/00
CPC分类号： G01N23/223 , G01N2223/076
摘要： The thickness of paint or other non-metallic coating on a galvanized or other plated metal plate is measured by applying radiation to the plated and painted plate and measuring the intensities of fluorescent X-rays thereupon emitted by the plating layer and base plate respectively. The fluorescent X-rays are detected and the electric signal produced by the detector is amplified and shaped to a corresponding waveform. The output of the amplifier is fed to two single channel analyzers and the output signals of the analyzers are counted for a predetermined time period and fed to a computer which computes the thickness from the measured intensities of the emitted fluorescent X-rays.
摘要翻译：镀锌或其他镀金属板上的涂料或其他非金属涂层的厚度是通过对镀膜和涂漆板施加辐射并分别测量由镀层和底板发射的荧光X射线的强度来测量的。检测荧光X射线，由检测器产生的电信号被放大并成形为相应的波形。放大器的输出被馈送到两个单通道分析器，并且分析器的输出信号被计数预定的时间段，并被馈送到计算从发射的荧光X射线的测量的强度的厚度的计算机。

73. 发明授权

US10710674B2 Bicycle pedal 有权
公开(公告)号：US10710674B2
公开(公告)日：2020-07-14
申请号：US13416114
申请日：2012-03-09
申请人： Akira Inoue
发明人： Akira Inoue
IPC分类号： B62M3/08
摘要： A bicycle pedal comprises a pedal axle, a main pedal body, a coupling mechanism and a cleat movement restricting member. The main pedal body is rotatably supported on the pedal axle. The coupling mechanism includes a first cleat securing member and a second cleat securing member. The first cleat securing member is configured to be coupled to a front portion of a cleat. The second cleat securing member is configured to be coupled a rear portion of the cleat. The cleat movement restricting member is configured to restrict movement of the cleat in at least one direction between a frontward direction and a rearward direction. The cleat movement restricting member is further configured and arranged relative to the coupling mechanism such that the cleat movement restricting member guides the cleat during a cleat disengagement operation in which the cleat detaches from the coupling mechanism.

74. 发明授权

US09287729B2 Secondary battery state management system, battery charger, secondary battery state management method, and electrical characteristics measurement method 有权
标题翻译：二次电池状态管理系统，电池充电器，二次电池状态管理方法和电气特性测量方法
公开(公告)号：US09287729B2
公开(公告)日：2016-03-15
申请号：US13643230
申请日：2011-04-22
申请人： Takayuki Nyu , Akira Inoue , Shuntaro Yamazaki
发明人： Takayuki Nyu , Akira Inoue , Shuntaro Yamazaki
IPC分类号： H02J7/00 , H02J7/04 , H02J7/24 , H02J7/06 , H01M10/44 , G01N27/416 , B60L11/00 , G01R31/36 , B60L11/18
CPC分类号： H02J7/0052 , B60L11/1838 , B60L2240/545 , B60L2240/547 , B60L2240/549 , B60L2250/16 , G01N27/416 , G01R31/3606 , G01R31/3651 , H01M10/44 , H02J7/0004 , H02J7/0027 , H02J2007/0001 , Y02T10/7005 , Y02T10/7055 , Y02T10/7072 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/163 , Y02T90/168 , Y04S30/12
摘要： A secondary battery state management system of the present invention includes: a battery charger that charges a secondary battery; and a storage server that stores electrical characteristics information which is information that indicates the electrical characteristics during charging of the secondary battery. An electrical characteristics measuring means measures the electrical characteristics during charging. A measurement information storing means stores the history of the measured electrical characteristics information for each secondary battery. A battery state determining means compares the electrical characteristics information of the secondary battery being measured by the electrical characteristics measuring means with the electrical characteristics information of the same secondary battery stored in the measurement information storing means, and determines the state of the secondary battery.
摘要翻译：本发明的二次电池状态管理系统包括：对二次电池充电的电池充电器; 以及存储服务器，其存储作为表示二次电池的充电期间的电特性的信息的电特性信息。电气特性测量装置测量充电期间的电气特性。测量信息存储装置存储每个二次电池的测量电特性信息的历史。电池状态确定装置将由电特性测量装置测量的二次电池的电特性信息与存储在测量信息存储装置中的相同二次电池的电特性信息进行比较，并确定二次电池的状态。

75. 发明授权

US09252330B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09252330B2
公开(公告)日：2016-02-02
申请号：US13813792
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32 , H01L33/16 , H01L33/20 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

76. 发明授权

US09159334B2 Voice processing device and method, and program 有权
标题翻译：语音处理装置及方法及程序
公开(公告)号：US09159334B2
公开(公告)日：2015-10-13
申请号：US13416117
申请日：2012-03-09
申请人： Akihiro Mukai , Akira Inoue
发明人： Akihiro Mukai , Akira Inoue
IPC分类号： G10L21/003 , G10L21/01
CPC分类号： G10L21/01
摘要： A voice processing device includes a voice pitch converting unit that performs a voice pitch converting process with respect to an input voice signal and converts voice pitch of the input voice signal, an error detecting unit that detects an error between the number of samples of an output voice signal, which is expected, and the number of samples of the output voice signal, which is actually output, and a time length control unit that controls adjustment of the time length in such a manner that the time length of the output voice signal is corrected by the amount of the error.
摘要翻译：语音处理装置包括语音音调转换单元，其对输入的语音信号执行语音音调转换处理，并转换输入语音信号的语音音调;错误检测单元，其检测输出的样本数之间的误差预期的语音信号和实际输出的输出语音信号的样本数;以及时间长度控制单元，其以这样的方式控制时间长度的调整，使得输出语音信号的时间长度为由错误量修正。

77. 发明授权

US08854638B2 Variable printing control apparatus and control program 有权
标题翻译：可变印刷控制装置和控制程序
公开(公告)号：US08854638B2
公开(公告)日：2014-10-07
申请号：US12959815
申请日：2010-12-03
申请人： Akira Inoue , Shigeru Sakamoto , Hideyuki Yamazaki
发明人： Akira Inoue , Shigeru Sakamoto , Hideyuki Yamazaki
IPC分类号： G06F3/12
CPC分类号： G06F3/1284 , G06F3/1211 , G06F3/1243 , G06F3/1244
摘要： A variable printing control apparatus for creating an image data to be printed, using variable printing data containing a plurality of page data in which one of a plurality of parts is arranged in one page, the variable printing control apparatus being configured to implement: a first processing method for rasterizing the plurality of page data, extracting the plurality of parts from each of pieces of raster data, and superimposing the plurality of parts of raster data to create the image data; and a second processing method for converting the plurality of page data into PDL data, extracting the plurality of parts from each of pieces of PDL data, superimposing the plurality of parts of PDL data, and rasterizing the superimposed PDL data to create the image data.
摘要翻译：一种可变打印控制装置，用于通过使用包含多个部分中的一个页面的多个页面数据的可变打印数据来创建要打印的图像数据，所述可变打印控制装置被配置为实现：第一用于光栅化所述多个页面数据的处理方法，从每个光栅数据中提取所述多个部分，以及叠加所述多个光栅数据部分以创建所述图像数据; 以及第二处理方法，用于将多个页面数据转换成PDL数据，从PDL数据中的每一个提取多个部分，叠加PDL数据的多个部分，以及光栅化叠加的PDL数据以创建图像数据。

78. 发明授权

US08823026B2 Nitride semiconductor light-emitting element and manufacturing method therefor 有权
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：US08823026B2
公开(公告)日：2014-09-02
申请号：US13880027
申请日：2012-05-02
申请人： Toshiya Yokogawa , Junko Iwanaga , Akira Inoue
发明人： Toshiya Yokogawa , Junko Iwanaga , Akira Inoue
IPC分类号： H01L33/00 , H01L33/32 , H01L33/02 , H01L33/16
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16
摘要： A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.
摘要翻译：实施方式的氮化物系半导体发光元件具有半导体层叠结构，该半导体层叠结构具有作为m面的生长面并由GaN系半导体构成。半导体多层结构包括n型半导体层，p型半导体层，设置在p型半导体层上的p侧电极以及介于n型半导体层和p型半导体层之间的有源层半导体层。有源层的厚度与n型半导体层的厚度D的比值在1.8×10-4＆lt; 1lE; D＆nlE; 14.1×10-4的范围内。 p侧电极S的面积在1×102μm2＆amp; NlE; S＆NlE; 9×104μm2的范围内。导致外部量子效率最大值的88％的最大电流密度不小于2A / mm2。

79. 发明申请

US20140174280A1 SIGNAL PROCESSING APPARATUS AND METHOD, SIGNAL PROCESSING SYSTEM, AND PROGRAM 审中-公开
标题翻译：信号处理装置和方法，信号处理系统和程序
公开(公告)号：US20140174280A1
公开(公告)日：2014-06-26
申请号：US14236435
申请日：2012-08-01
申请人： Shuichiro Nishigori , Akira Inoue
发明人： Shuichiro Nishigori , Akira Inoue
IPC分类号： G10K15/04
CPC分类号： G10K15/04 , G10H1/366 , G10H1/38 , G10H2210/261 , G10H2220/371
摘要： A signal processing apparatus and method, a signal processing system, and a program designed to appropriately set harmonizing periods in accordance with a status of singing of a performer and add a harmonizing voice. A singing enthusiasm calculating unit calculates a degree of singing enthusiasm formed with a feature quantity indicating the status of singing enthusiasm of a performer of a tune. A harmonizing signal controlling unit determines whether to superimpose a harmonizing voice signal generated by a pitch detecting unit, a harmonizing key determining unit, and a pitch shifter on the singing voice signal of the performer of the tune based on the degree of singing enthusiasm calculated by the singing enthusiasm calculating unit, and superimposes the harmonizing voice signal on the singing voice signal based on a result of the determination. The technique can be applied to karaoke machines.
摘要翻译：一种信号处理装置和方法，信号处理系统和程序，被设计为根据表演者的歌唱状态适当地设定协调周期并添加协调语音。唱歌热情计算单元计算表示曲调表演者的歌唱热情的特征量形成的歌唱热情度。协调信号控制单元基于由音调检测单元，协调键确定单元和音调移位器产生的协调声音信号，基于由歌曲激励程度由歌曲激励程度歌唱热情计算单元，并且基于确定的结果将歌曲声音信号上的协调语音信号叠加起来。该技术可应用于卡拉OK机。

80. 发明申请

US20130249626A1 MULTIPLE POWER MODE AMPLIFIER 审中-公开
标题翻译：多功率模式放大器
公开(公告)号：US20130249626A1
公开(公告)日：2013-09-26
申请号：US13992317
申请日：2011-11-09
申请人： Naoko Matsunaga , Kenichi Horiguchi , Hiroshi Otsuka , Masatoshi Nakayama , Kazuhiro Iyomasa , Kazuya Yamamoto , Akira Inoue
发明人： Naoko Matsunaga , Kenichi Horiguchi , Hiroshi Otsuka , Masatoshi Nakayama , Kazuhiro Iyomasa , Kazuya Yamamoto , Akira Inoue
IPC分类号： H03F1/02
CPC分类号： H03F1/0277 , H03F1/34 , H03F1/56 , H03F3/45475 , H03F3/72 , H03F2200/222 , H03F2200/387 , H03F2200/411 , H03F2203/45526 , H03F2203/45528 , H03F2203/45534 , H03F2203/45536 , H03F2203/7215 , H03F2203/7221 , H03F2203/7236 , H03G1/0088 , H03G3/3042
摘要： A multiple power mode amplifier includes: N amplifiers connected in series via switches; and a control circuit for controlling the N amplifiers in accordance with the output modes. P amplifiers out of the N amplifiers constitute a driver amplifier, and constitute a negative feedback amplifier including a feedback circuit for negatively feeding back its own output signal to its own input side. N−P amplifiers constitute a final stage amplifier connected in series to the negative feedback amplifier in a disconnectable manner. The control circuit is configured to: in a first output mode, disconnect the final stage amplifier from the negative feedback amplifier, and disable the feedback circuit; and in a second output mode, connect the final stage amplifier in series to the negative feedback amplifier, and enable the feedback circuit.
摘要翻译：多功率模式放大器包括：通过开关串联连接的N个放大器; 以及根据输出模式控制N个放大器的控制电路。 N个放大器中的P放大器构成驱动器放大器，并构成负反馈放大器，其包括用于将其自身的输出信号负反馈给其自身输入侧的反馈电路。 N-P放大器构成以可断开方式与负反馈放大器串联连接的最后级放大器。控制电路被配置为：在第一输出模式下，将最终级放大器与负反馈放大器断开，并且禁用反馈电路; 并且在第二输出模式中，将最后级放大器串联连接到负反馈放大器，并使能反馈电路。

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