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71. 发明申请

US20100244560A1 VEHICLE POWER SUPPLY SYSTEM 审中-公开
标题翻译：车辆电源系统
公开(公告)号：US20100244560A1
公开(公告)日：2010-09-30
申请号：US12713994
申请日：2010-02-26
申请人： Yoshihiro Sato , Kenichi Kessoku , Hirohito Miyazaki
发明人： Yoshihiro Sato , Kenichi Kessoku , Hirohito Miyazaki
IPC分类号： B60L1/00
CPC分类号： B60R16/03
摘要： A vehicle power supply system has a power supply unit for supplying power to each unit of a vehicle, a plurality of actuation units actuated by the power from the power supply unit, an operation unit arranged for each of the plurality of actuation units, and operated when actuating the corresponding actuation unit, and a control unit for performing a control of starting supply of power from the power supply unit to each of the plurality of actuation units according to the operation of the corresponding operation unit when an actuation condition of the actuation unit corresponding to the operation unit is satisfied.
摘要翻译：车辆电源系统具有用于向车辆的每个单元供电的电源单元，由来自电源单元的电力驱动的多个致动单元，为多个致动单元中的每一个而设置的操作单元，并且被操作当致动相应的致动单元时，以及控制单元，用于当致动单元的致动状态时根据相应的操作单元的操作进行控制，以从电源单元开始向多个致动单元中的每个致动单元对应于操作单元满足。

72. 发明授权

US07787287B2 Magnetic storage device with curved interconnects 失效
标题翻译：具有弯曲互连的磁存储设备
公开(公告)号：US07787287B2
公开(公告)日：2010-08-31
申请号：US11723209
申请日：2007-03-19
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , H01L43/08
摘要： In an MRAM, a curved region (206) is formed in a bit line (202), and this curved region (206) is in bent shape, with a TMR element (203) serving as a center, in this case, in rough U shape (in the illustrated example, in roughly inverted U shape). The bit line (202) in which the curved region (206) is formed includes the TMR element (203) in a space formed by the curved region (206). Thanks to such relatively simple construction, this construction realizes a highly reliable MRAM which ensures that power is substantially saved during data writing into a memory cell while meeting requirements for further miniaturization of the device.
摘要翻译：在MRAM中，弯曲区域（206）形成在位线（202）中，该弯曲区域（206）处于弯曲形状，TMR元件（203）作为中心，在这种情况下为粗糙 U形（在所示示例中，大致倒U形）。其中形成弯曲区域（206）的位线（202）包括在由弯曲区域（206）形成的空间中的TMR元件（203）。由于这种相对简单的结构，这种结构实现了高度可靠的MRAM，其确保了在将数据写入存储器单元期间基本上节省功率，同时满足对器件进一步小型化的要求。

73. 发明授权

US07710473B2 Smear-corrective device 有权
标题翻译：涂抹校正装置
公开(公告)号：US07710473B2
公开(公告)日：2010-05-04
申请号：US11546424
申请日：2006-10-12
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： H04N9/64
CPC分类号： H04N5/372 , H04N5/3595
摘要： A smear-correcting device that corrects a smear of an image signal from a CCD having photoelectric conversion elements including a smear-correcting photoelectric conversion element, is provided and includes: a determining section determining whether a smear component is contained in an image signal from the photoelectric conversion elements other than the smear-correcting photoelectric conversion element, based on a corresponding smear-correcting signal from the smear-correcting photoelectric conversion element; a section correcting the smear of the image signal determined to contain the smear component, based on the corresponding smear-correcting signal; and an output section that outputs an image signal. When the determining section determines that the image signal contains a smear component, the output section outputs the image signal after correcting a smear of the image signal, and when the determining section determines that the image signal does not contains the smear component, the output section outputs the image signal without smear correction.
摘要翻译：提供了一种校正来自具有包含涂片校正光电转换元件的光电转换元件的CCD的图像信号的拖尾的涂抹校正装置，包括：确定部，确定来自所述图像信号的图像信号中是否包含拖尾分量基于来自涂片校正光电转换元件的相应的涂片校正信号，除了涂片校正光电转换元件之外的光电转换元件; 基于相应的涂片校正信号校正被确定为包含拖尾分量的图像信号的拖尾的部分; 以及输出图像信号的输出部。当确定部分确定图像信号包含拖尾分量时，输出部分在校正图像信号的拖尾之后输出图像信号，并且当确定部分确定图像信号不包含拖尾分量时，输出部分输出图像信号，无涂片校正。

74. 发明申请

US20100067352A1 OBJECTIVE LENS ACTUATOR AND AN OPTICAL PICKUP 失效
标题翻译：目标镜头执行器和光学拾取
公开(公告)号：US20100067352A1
公开(公告)日：2010-03-18
申请号：US12540439
申请日：2009-08-13
申请人： Keiko Saito , Katsuhiko Kimura , Takahiro Yamaguchi , Yoshihiro Sato
发明人： Keiko Saito , Katsuhiko Kimura , Takahiro Yamaguchi , Yoshihiro Sato
IPC分类号： G11B7/00
CPC分类号： G11B7/1374 , G11B7/121 , G11B2007/0006
摘要： An objective lens actuator comprises, two objective lenses, each for focusing lights upon an optical disc, an objective lens holder member for holding the objective lenses thereon, and lens protectors for preventing the objective lenses from being contacted on the optical disc, wherein the lens protectors include first and second lens protectors, which are provided on both end portions of the objective lens holder member in a tracking direction, and a third lens protector, which is provided in a middle of the two objective lenses, wherein the first and second lens protectors, which are provided on both end portions of the objective lens holder member in the tracking direction, are provided the objective lenses and end portion of the objective lens holder member in the tracking direction, and the third lens protector, which is provided between the objective lenses, has a height closer to that of the optical disc than the protectors, which are provided on both end portions of the objective lens holder member in the tracking direction.
摘要翻译：物镜致动器包括两个物镜，每个用于将光聚焦在光盘上，用于将物镜保持在其上的物镜保持器构件和用于防止物镜在光盘上接触的透镜保护器，其中透镜保护器包括在跟踪方向上设置在物镜保持器构件的两个端部上的第一和第二透镜保护器，以及设置在两个物镜的中间的第三透镜保护器，其中第一和第二透镜在跟踪方向上设置在物镜保持器构件的两端部上的保护器设置在跟踪方向上的物镜和物镜保持器构件的端部，并且第三透镜保护器设置在与设置在物体的两端部的保护体相比，物镜的高度比光盘高 ve透镜保持器构件沿跟踪方向。

75. 发明授权

US07679104B2 Vertical type semiconductor device and manufacturing method of the device 有权
标题翻译：垂直型半导体器件及其制造方法
公开(公告)号：US07679104B2
公开(公告)日：2010-03-16
申请号：US11937090
申请日：2007-11-08
申请人： Yoshihiro Sato , Sadahiro Kato , Masayuki Iwami , Hitoshi Sasaki , Shinya Ootomo , Yuki Niiyama
发明人： Yoshihiro Sato , Sadahiro Kato , Masayuki Iwami , Hitoshi Sasaki , Shinya Ootomo , Yuki Niiyama
IPC分类号： H01L29/267
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/76895 , H01L29/0657 , H01L29/2003 , H01L29/41 , H01L29/417 , H01L29/41766 , H01L29/66143 , H01L29/66727 , H01L29/66734 , H01L29/7813 , H01L29/872
摘要： A vertical semiconductor element comprises: an electro-conductive substrate; a GaN layer, as a nitride compound semiconductor layer, which is selectively grown as a convex shape on one surface of the electro-conductive substrate through a buffer layer; a source electrode as a first electrode formed on the GaN layer; and a drain electrode as a second electrode formed on another surface of the electro-conductive substrate.
摘要翻译：垂直半导体元件包括：导电基板; 作为氮化物半导体层的GaN层，其通过缓冲层在导电性基板的一个表面上选择性地生长为凸形; 源极，形成在GaN层上的第一电极; 以及作为形成在导电基板的另一表面上的第二电极的漏电极。

76. 发明申请

US20090278172A1 GaN based semiconductor element 有权
标题翻译： GaN基半导体元件
公开(公告)号：US20090278172A1
公开(公告)日：2009-11-12
申请号：US12382010
申请日：2009-03-05
申请人： Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Yuki Niiyama , Masatoshi Ikeda
发明人： Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Yuki Niiyama , Masatoshi Ikeda
IPC分类号： H01L29/205
CPC分类号： H01L29/0847 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.
摘要翻译：场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供应层（未掺杂的AlGaN层）依次叠置在蓝宝石衬底上的叠层结构。在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

77. 发明授权

US07602426B2 Digital camera and defect pixel compensation system 有权
标题翻译：数码相机和缺陷像素补偿系统
公开(公告)号：US07602426B2
公开(公告)日：2009-10-13
申请号：US11491148
申请日：2006-07-24
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： H04N9/64 , H04N5/225 , H04N3/14
CPC分类号： H04N5/3675 , H04N5/367
摘要： A digital camera is connected to a computer through a serial terminal. The computer is connected to a server through an internet. To the server, the digital camera transmits uncompensated image data to which no defect pixel compensation is applied, and defect pixel information preliminarily read from a nonvolatile memory. The server analyses this image data to compare with the defect pixel information, and then creates new defect pixel information. The new defect pixel information is transmitted to the digital camera, and additionally written to the nonvolatile memory. The digital camera compensates image data obtained by image capturing, based on the defect pixel information.
摘要翻译：数码相机通过串行端子连接到计算机。计算机通过互联网连接到服务器。对于服务器，数码相机发送未补偿的未补偿的图像数据，并且从非易失性存储器预先读取缺陷像素信息。服务器分析此图像数据与缺陷像素信息进行比较，然后创建新的缺陷像素信息。将新的缺陷像素信息发送到数字照相机，并另外写入非易失性存储器。数码相机根据缺陷像素信息补偿通过图像捕获获得的图像数据。

78. 发明申请

US20090140295A1 GaN-based semiconductor device and method of manufacturing the same 有权
标题翻译： GaN基半导体器件及其制造方法
公开(公告)号：US20090140295A1
公开(公告)日：2009-06-04
申请号：US12292164
申请日：2008-11-13
申请人： Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Koh Li
发明人： Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Koh Li
IPC分类号： H01L29/737 , H01L21/28 , H01L21/265
CPC分类号： H01L29/7787 , H01L29/0611 , H01L29/2003 , H01L29/4175 , H01L29/66462
摘要： A GaN-based semiconductor device includes a silicon substrate; an active layer of a GaN-based semiconductor formed on the silicon substrate; a trench formed in the active layer and extending from a top surface of the active layer to the silicon substrate; a first electrode formed on an internal wall surface of the trench so that the first electrode extends from the top surface of the active layer to the silicon substrate; a second electrode formed on the active layer so that a current flows between the first electrode and the second electrode via the active layer; and a bottom electrode formed on a bottom surface of the silicon substrate. The first electrode is formed of a metal capable of being in ohmic contact with the silicon substrate and the active layer.
摘要翻译： GaN基半导体器件包括硅衬底; 形成在硅衬底上的GaN基半导体的有源层; 形成在有源层中并从有源层的顶表面延伸到硅衬底的沟槽; 形成在所述沟槽的内壁表面上的第一电极，使得所述第一电极从所述有源层的顶表面延伸到所述硅衬底; 形成在有源层上的第二电极，使得电流经由有源层在第一电极和第二电极之间流动; 以及形成在硅衬底的底表面上的底部电极。第一电极由能够与硅衬底和有源层欧姆接触的金属形成。

79. 发明申请

US20070247943A1 Magnetic memory device and method for reading the same 有权
标题翻译：磁记忆装置及其读取方法
公开(公告)号：US20070247943A1
公开(公告)日：2007-10-25
申请号：US11808967
申请日：2007-06-14
申请人： Yoshihiro Sato , Masaki Aoki
发明人： Yoshihiro Sato , Masaki Aoki
IPC分类号： G11C7/02
CPC分类号： G11C11/16
摘要： A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.
摘要翻译：磁存储器件包括多个位线BL; 存储单元MC设置在相应的多个位线处，并且每个存储单元MC包括电阻值随着磁化方向的变化而变化的磁阻效应元件MTJ，以及连接到磁阻效应元件MTJ的选择晶体管Tr，磁阻效应元件MC具有一个端子连接到位线BL，另一个端子经由选择晶体管连接到第一信号线GND; 设置在相应的多个位线BL上的虚设单元DC，并且每个包括具有恒定电阻值的电阻元件R，该电阻元件具有连接到位线BL的一个端子和连接到第二信号线SIG < SUB> D 以及连接到多个位线BL的电压检测放大器SA。

80. 发明申请

US20050002431A1 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050002431A1
公开(公告)日：2005-01-06
申请号：US10867731
申请日：2004-06-16
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01S5/22 , H01S5/227 , H01S5/323 , H01S5/00
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.
摘要翻译：一种掩埋半导体激光器件的制造方法，包括以下步骤：形成包括覆盖在n型半导体衬底上的底部包层，有源层和顶部覆层的台面结构; 并且通过在台面结构的每个侧表面上和从每个侧表面延伸的裙部上生长p型电流阻挡层和n型电流阻挡层来形成电流限制结构，p型电流阻挡层通过使用含有III族元素气体和V族元素气体的原料气体，其摩尔比在60和350（含）之间。在该方法中，可以以优异的再现性制造包括具有规定的漏电流路径宽度的电流限制结构的半导体激光装置。

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