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71. 发明授权

US5791045A Process for the production of a diamond heat sink 失效
标题翻译：生产金刚石散热器的工艺
公开(公告)号：US5791045A
公开(公告)日：1998-08-11
申请号：US819440
申请日：1997-03-17
申请人： Yoshiyuki Yamamoto , Takashi Tsuno , Takahiro Imai , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Takashi Tsuno , Takahiro Imai , Naoji Fujimori
IPC分类号： H01L21/48 , H01L23/367 , H01L23/373 , B23P15/26
CPC分类号： H01L21/4882 , H01L23/3672 , H01L23/3732 , H01L2924/0002 , Y10T29/4935
摘要： A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are combined with the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such heat sink is produced by a simple process including arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper ends of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.
摘要翻译：具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。翅片与基底组合，并且是具有至少1（W / cm×K）的热导率的材料，例如金刚石。这种散热器是通过简单的工艺生产的，其包括设置用于生长金刚石的基底材料和翅片，使得基底材料的表面和翅片的上端通过使用适当的支撑构件或者通过使基材自身工作并通过气相合成方法在其上生长金刚石。

72. 发明授权

US5785754A Substrate, semiconductor device, element-mounted device and preparation of substrate 失效
标题翻译：基板，半导体器件，元件安装器件和衬底的制备
公开(公告)号：US5785754A
公开(公告)日：1998-07-28
申请号：US565593
申请日：1995-11-30
申请人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Katsuko Harano , Nobuhiro Ota , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Katsuko Harano , Nobuhiro Ota , Naoji Fujimori
IPC分类号： G21K1/10 , H01J35/18 , H01L23/373 , H01L23/473 , H01S5/02 , H01S5/024 , H05H7/00 , C30B29/05
CPC分类号： H01J35/18 , G21K1/10 , H01L23/3732 , H01L23/473 , H05H7/00 , G21K2201/065 , H01J2235/122 , H01J2235/1262 , H01L2924/0002 , H01S5/02423 , H01S5/02492
摘要： A substrate, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property.
摘要翻译：具有热传导率为至少10W / cm×KK并且在高导热性材料层上或其中具有冷却介质流动路径的高导热性材料层的基板具有高的散热性能。

73. 发明授权

US5677372A Diamond reinforced composite material 失效
标题翻译：金刚石增强复合材料
公开(公告)号：US5677372A
公开(公告)日：1997-10-14
申请号：US569591
申请日：1995-12-08
申请人： Yoshiyuki Yamamoto , Takahiro Imai , Takashi Tsuno , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Takahiro Imai , Takashi Tsuno , Naoji Fujimori
IPC分类号： B29C70/10 , C08K9/02 , C23C16/01 , C23C16/27 , C23C16/56 , C08K3/04 , B32B5/00 , C23C16/38
CPC分类号： C23C16/274 , B29C70/10 , C08K9/02 , C23C16/01 , C23C16/56 , Y10T428/12438 , Y10T428/2933 , Y10T428/2938 , Y10T428/2942 , Y10T428/2978 , Y10T428/30
摘要： An improved adhesion or bonding between diamond fibers and a matrix of at least one organic polymer such as a resin is achieved in a composite material reinforced with vapor-deposited diamond. To improve bonding to the matrix, hydrogen is removed from the surface of vapor-deposited diamond fiber. This can be achieved by heating the diamond under an oxidative atmosphere at a temperature of about 150.degree. C. to about 800.degree. C., or under a non-oxidative atmosphere at a temperature of about 800.degree. C. to about 1500.degree. C. The surface of the vapor-deposited diamond, which contains not more than about 1.times.10.sup.15 /cm.sup.2 of hydrogen atoms, is bonded to the matrix of resin for example with sufficient strength. To further improve bonding, diamond doped with B or N is employed as the reinforcing material or at least a surface layer thereof.
摘要翻译：金刚石纤维与至少一种有机聚合物如树脂的基质之间的改进的粘附或粘合是在用气相沉积金刚石增强的复合材料中实现的。为了改善与基质的结合，从气相沉积金刚石纤维的表面除去氢。这可以通过在氧化气氛下在约150℃至约800℃的温度下或在非氧化性气氛下在约800℃至约1500℃的温度下加热金刚石来实现。含有不大于约1×10 15 / cm 2氢原子的气相沉积金刚石的表面例如以足够的强度结合到树脂基质上。为了进一步改善结合，使用掺有B或N的金刚石作为增强材料或至少其表面层。

74. 发明授权

US5642779A Heat sink and a process for the production of the same 失效
标题翻译：散热片和生产过程相同
公开(公告)号：US5642779A
公开(公告)日：1997-07-01
申请号：US257288
申请日：1994-06-09
申请人： Yoshiyuki Yamamoto , Takashi Tsuno , Takahiro Imai , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Takashi Tsuno , Takahiro Imai , Naoji Fujimori
IPC分类号： H01L21/48 , H01L23/367 , H01L23/373
CPC分类号： H01L21/4882 , H01L23/3672 , H01L23/3732 , H01L2924/0002 , Y10T29/4935
摘要： A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are embedded in the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such a heat sink can be produced by a simple process of arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper end of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.
摘要翻译：具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。翅片嵌入基板中，并且是具有至少1（W / cm×K）的导热率的材料，例如金刚石。这样的散热器可以通过简单的方法来制造，该方法是将基底材料和用于生长金刚石的翅片以这样一种方式制成，使得基底材料的表面和翅片的上端通过使用合适的或通过使基材本身加工并通过气相合成方法在其上生长金刚石。

75. 发明授权

US5516027A Bonding tool having a diamond head and method of manufacturing the same 失效
标题翻译：具有金刚石头的接合工具及其制造方法
公开(公告)号：US5516027A
公开(公告)日：1996-05-14
申请号：US309842
申请日：1994-09-20
申请人： Keiichiro Tanabe , Toshiya Takahashi , Akihiko Ikegaya , Naoji Fujimori
发明人： Keiichiro Tanabe , Toshiya Takahashi , Akihiko Ikegaya , Naoji Fujimori
IPC分类号： B23K20/02 , C04B41/50 , C04B41/85 , H05K13/00 , H01L21/58
CPC分类号： C04B41/009 , B23K20/025 , C04B41/5002 , C04B41/85 , H01L24/79 , H05K13/003
摘要： A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant. The head portion having electrical conductivity can be heated by energization. In a tool employing a coating containing vapor-deposited diamond as a bonding head portion, the coating is formed by a compound of a metal or ceramics and vapor-deposited diamond, in order to improve the strength of the coating and adhesion to a tool substrate.
摘要翻译：接合工具具有基本上由气相沉积金刚石制成的头部，其中形成头部面的主要金刚石晶体平面是（111）面。这种头面具有高硬度和良好的耐磨性。为了提高主要由气相沉积金刚石制成的接合头的韧性，形成头部面的部分或层基本上由高纯度的金刚石组成，并且支撑头部面的另一部分或层基本上由低熔点金刚石构成，纯度钻石。头部表面具有高刚性，而支撑头部面的部分具有高韧性。为了提供主要由具有导电性的气相沉积金刚石制成的接合头部分，形成头部面的第一部分或第一部分基本上由含有相对少量掺杂剂的多晶金刚石组成，另一部分或层叠支撑第一部分或第二部分含有大量的掺杂剂。可以通过通电来加热具有导电性的头部。在使用包含气相沉积金刚石作为粘合头部分的涂层的工具中，涂层由金属或陶瓷和气相沉积金刚石的化合物形成，以便提高涂层的强度和对工具基材的粘附。

76. 发明授权

US5483038A Method of working diamond with ultraviolet light 失效
标题翻译：用紫外线加工金刚石的方法
公开(公告)号：US5483038A
公开(公告)日：1996-01-09
申请号：US50639
申请日：1993-04-22
申请人： Nobuhiro Ota , Katsuko Harano , Naoji Fujimori
发明人： Nobuhiro Ota , Katsuko Harano , Naoji Fujimori
IPC分类号： B01J19/12 , B23K26/00 , B28D1/22 , B28D5/00 , C04B41/00 , C04B41/80 , C30B29/04 , C30B33/00 , B23K26/06
CPC分类号： B23K26/0075 , B28D1/221 , C04B41/0045 , C04B41/009 , C04B41/80
摘要： Diamond is subjected to working such as smoothing or cutting by irradiation of light having a wavelength in the range of 190 nm to 360 nm to the surface of the diamond. The energy density of the incident light, the divergent angle of the light beam and the half-width of spectrum of the light are specified. The light beam is converged by a cylindrical lens. Moreover, the working is conducted in a specified material, whereby the flatness of the worked face and the working speed are improved.
摘要翻译：通过将波长在190nm至360nm的波长的光照射到金刚石的表面，对金刚石进行平滑化或切割等工作。规定入射光的能量密度，光束的发散角和光的光谱的半宽度。光束由柱面透镜会聚。此外，以特定材料进行加工，从而提高加工面的平坦度和加工速度。

77. 发明授权

US5474021A Epitaxial growth of diamond from vapor phase 失效
标题翻译：来自气相的金刚石的外延生长
公开(公告)号：US5474021A
公开(公告)日：1995-12-12
申请号：US125482
申请日：1993-09-22
申请人： Takashi Tsuno , Takahiro Imai , Naoji Fujimori
发明人： Takashi Tsuno , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B25/02 , C30B25/18 , C30B29/04
CPC分类号： C30B25/18 , C30B25/02 , C30B29/04
摘要： A plurality of single-crystalline diamond plates having principal surfaces consisting essentially of {100} planes are prepared. The diamond plates are so arranged that the respective principal surfaces are substantially flush with each other. In this arrangement, an angle formed by crystal orientations of the principal surfaces between adjacent plates is not more than 5.degree., a clearance between the adjacent plates is not more than 30 .mu.m, and a difference in height of the principal surfaces is not more than 30 .mu.m between the adjacent plates. To secure this arrangement, the plurality of diamond plates are joined to each other by depositing diamond on the plates to form a single large diamond plate. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps or height differences. Then, diamond is epitaxially grown on a polished surface of the large diamond plate from a vapor phase. In this vapor phase, proportions X, Y and Z obtained from the following equations I, II and III respectively satisfy the following conditions:0.5.ltoreq.X.ltoreq.2.00.3.ltoreq.Y.ltoreq.2.0Z.ltoreq.1.0X=([C]/[H]).times.100% IY=([C]-[O]/[H]).times.100% IIZ=([O]/[H]).times.100% IIIwhere [C], [O] and [H] represent molar numbers of carbon, oxygen and hydrogen atoms respectively. In this way it is possible to obtain vapor-deposited diamond having favorable characteristics.
摘要翻译：制备了主要由{100}平面组成的主表面的多个单晶金刚石板。金刚石板被布置成使得各个主表面彼此基本齐平。在这种布置中，相邻板之间的主表面的晶体取向形成的角度不大于5°，相邻板之间的间隙不大于30μm，并且主表面的高度差不大相邻板块之间大于30微米。为了确保这种布置，多个金刚石板通过在金属板上沉积金刚石形成单个大金刚石板而彼此接合。在这种接合之后，抛光金刚石板的主表面以消除台阶或高度差异。然后，金刚石从气相在外延生长在大金刚石板的抛光表面上。在该气相中，由下列方程式I，II和III得到的比例X，Y和Z分别满足以下条件：0.5≤X≤2.00.3

78. 发明授权

US5435815A Cutting tool employing vapor-deposited polycrystalline diamond for cutting edge and method of manufacturing the same 失效
标题翻译：使用气相沉积多晶金刚石切割刃的切割工具及其制造方法
公开(公告)号：US5435815A
公开(公告)日：1995-07-25
申请号：US84298
申请日：1993-06-29
申请人： Akihiko Ikegaya , Keiichiro Tanabe , Toshiya Takahashi , Naoji Fujimori
发明人： Akihiko Ikegaya , Keiichiro Tanabe , Toshiya Takahashi , Naoji Fujimori
IPC分类号： B23P15/28 , C23C16/01 , C23C16/27 , C23C28/00 , C23C30/00 , B24D11/00
CPC分类号： C23C16/278 , B23P15/28 , C23C16/01 , C23C16/271 , C23C16/276 , C23C28/04 , C23C28/044 , C23C28/048 , C23C30/005
摘要： A diamond cutting tool has a tool substrate and a cutting edge member. The cutting edge member is formed of a material having a three-layer structure or a diamond composite material. When the material having a three-layer structure is employed, the cutting edge member is formed by a vapor-deposited diamond layer defining a rake face, a layer of a composite material of vapor-deposited diamond and a metal or ceramics, and a layer of the metal or ceramics. The metal is prepared from Mo, W, Cr, V, Nb, Ta, Co, Ni or Fe, while the ceramics is prepared from cBN, SiC, Si.sub.3 N.sub.4, WC, TiC, TaC, NbC, Cr.sub.3 C.sub.2, Mo.sub.2 C, VC, TiN or BN. The cutting edge member is brazed to the tool substrate through the metal or ceramics layer. When the diamond composite material is employed, on the other hand, the cutting edge member is formed of a composite material of particles or fibers of AlN, cBN or SiC and vapor-deposited diamond. The diamond cutting tool is excellent in heat resistance and durability.
摘要翻译：金刚石切削工具具有工具基板和切削刃部件。切削刃部件由具有三层结构的材料或金刚石复合材料形成。当采用具有三层结构的材料时，切割边缘部件由形成前刀面的气相沉积金刚石层，气相沉积金刚石和金属或陶瓷的复合材料层以及层的金属或陶瓷。该金属由Mo，W，Cr，V，Nb，Ta，Co，Ni或Fe制成，而陶瓷由cBN，SiC，Si3N4，WC，TiC，TaC，NbC，Cr3C2，Mo2C，VC，TiN 或BN。切削刃部件通过金属或陶瓷层钎焊到工具基板上。另一方面，当使用金刚石复合材料时，切削刃部件由AlN，cBN或SiC的颗粒或纤维的复合材料和气相沉积金刚石形成。金刚石切割工具耐热性和耐久性优异。

79. 发明授权

US5387443A Laser CVD method for synthesizing diamond 失效
标题翻译：激光CVD法合成金刚石
公开(公告)号：US5387443A
公开(公告)日：1995-02-07
申请号：US90282
申请日：1993-07-08
申请人： Nobuhiro Ota , Naoji Fujimori , Kenichi Watanabe
发明人： Nobuhiro Ota , Naoji Fujimori , Kenichi Watanabe
IPC分类号： C23C16/26 , C23C16/04 , C23C16/27 , C23C16/48 , C30B25/02 , C30B29/04 , B05D3/06
CPC分类号： C23C16/27 , C23C16/047 , C23C16/483
摘要： A method for synthesizing a diamond by vapor deposition permits selectively growing high quality diamond on any desired region of a base material at a lower temperature compared to respective conventional temperatures starting with a raw material gas which is prepared by diluting a compound containing carbon atoms such as methane with hydrogen gas. This diluted raw material gas is irradiated with a laser beam satisfying at least one of the following two conditions, namely a spread angle of 1.times.10.sup.-1 mrad to 5.times.10.sup.-1 mrad during oscillation or a half-power band width of 1.times.10.sup.-4 nm to 1.times.10.sup.-1 nm with respect to a band width of an oscillation having a wavelength of 190 nm to 360 nm. Diamond is deposited on the base material from a chemical species generated by such irradiation.
摘要翻译：通过气相沉积合成金刚石的方法允许在相对于常规温度的基础材料的任何所需区域上选择性地生长高品质金刚石，原料气体是通过稀释含有碳原子的化合物甲烷与氢气。用满足以下两个条件中的至少一个条件的激光束照射该稀释的原料气体，即在振荡期间为1×10-1 mrad至5×10-1 mrad的扩展角或1×10 -4 nm的半功率带宽至相对于波长为190nm〜360nm的振荡的带宽为1×10 -1 nm。通过这种照射产生的化学物质将金刚石沉积在基材上。

80. 发明授权

US5387310A Method for producing single crystal diamond film 失效
标题翻译：单晶金刚石薄膜的制造方法
公开(公告)号：US5387310A
公开(公告)日：1995-02-07
申请号：US47384
申请日：1993-04-16
申请人： Hiromu Shiomi , Naoji Fujimori
发明人： Hiromu Shiomi , Naoji Fujimori
IPC分类号： C30B29/04 , C30B25/02
CPC分类号： C30B25/02 , C30B29/04
摘要： A single crystal diamond film having good electrical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas and a carbon-containing compound and epitaxially growing a single crystal diamond film on a single crystal substrate in a vapor phase, wherein a molar ratio of the carbon atoms in the carbon-containing compound to the hydrogen is from 2:100 to 10:100 and a lattice constant of the single crystal substrate satisfies the following relation:.vertline.(a-a.sub.0)/a.vertline..times.100.ltoreq.20 (I)wherein a.sub.0 is the lattice constant of diamond (3.567 .ANG.) and a is a lattice constant of the single crystal substrate.
摘要翻译：具有良好电特性的单晶金刚石薄膜是通过以下步骤制造的：一种包括氢气和含碳化合物的原料气体在气相中在单晶基板上分解外延生长单晶金刚石膜的步骤其中，含碳化合物中的碳原子与氢的摩尔比为2：100〜10：100，单晶基板的晶格常数满足：（a-a0）/ a | x100 =（I）其中a0是金刚石的晶格常数（3.567 ANGSTROM），a是单晶衬底的晶格常数。

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