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    • 75. 发明授权
    • Magnetoresistance element, head, sensing system, and magnetic storing system
    • 磁阻元件,磁头,传感系统和磁存储系统
    • US06665153B1
    • 2003-12-16
    • US09626822
    • 2000-07-27
    • Kazuhiko Hayashi
    • Kazuhiko Hayashi
    • G11B539
    • G11B5/3903G01R33/09G11B5/313G11B5/3932
    • A MR element is provided, which allows the sense current to flow through only the inner region of a MR layer to bypass its end regions, thereby realizing high magnetic sensitivity and good domain control in the sensing region. The element comprises (a) a MR layer having a width corresponding to a recording track width of an applicable magnetic recording medium; (b) a pair of vertical biasing layers disposed at each side of the MR layer to be overlapped with each end of the MR layer; inner opposing ends of the pair of vertical biasing layers being contacted with the MR layer; (c) a pair of dielectric layers formed on the pair of biasing layers; inner opposing ends of the pair of dielectric layers being contacted with the MPR layer; and (d) a pair of electrode layers formed on the pair of dielectric layers; inner opposing ends of the pair of electrode layers being contacted with the MR layer, thereby electrically connecting the pair of electrode layers to the MR layer; a distance between the inner opposing ends of the pair of electrode layers being smaller than a width of the MR layer. The pair of electrode layers may be completely separated from the pair of vertical biasing layers by the pair of dielectric layers or contacted with the pair of vertical biasing layers by way of openings in the pair of dielectric layers.
    • 提供MR元件,其允许感测电流仅流过MR层的内部区域以绕过其端部区域,从而在感测区域中实现高磁敏感性和良好的域控制。 元件包括(a)具有对应于可应用的磁记录介质的记录磁道宽度的宽度的MR层; (b)设置在MR层的每一侧的一对垂直偏置层,以与MR层的每个端部重叠; 一对垂直偏压层的内相对端与MR层接触; (c)形成在所述一对偏置层上的一对电介质层; 一对电介质层的内相对端与MPR层接触; 和(d)形成在所述一对电介质层上的一对电极层; 一对电极层的内相对端与MR层接触,从而将该对电极层电连接到MR层; 一对电极层的内部相对端之间的距离小于MR层的宽度。 一对电极层可以通过该对电介质层与一对垂直偏置层完全分离,或者通过一对电介质层中的开口与一对垂直偏压层接触。
    • 78. 发明授权
    • Magneto-resistive element and magnetic head for data writing/reading
    • 用于数据写入/读取的磁阻元件和磁头
    • US06490139B1
    • 2002-12-03
    • US09492229
    • 2000-01-27
    • Kazuhiko HayashiKeishi OhashiNobuyuki IshiwataMasafumi NakadaHisao MatsuteraHisanao TsugeAtsushi Kamijo
    • Kazuhiko HayashiKeishi OhashiNobuyuki IshiwataMasafumi NakadaHisao MatsuteraHisanao TsugeAtsushi Kamijo
    • G11B5127
    • B82Y25/00G01R33/093G11B5/3903G11B5/3967
    • A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.
    • 磁阻元件包括第一电极,形成在电阻根据磁场改变的第一电极上的磁阻层和形成在磁阻层上的第二电极层。 磁阻层具有形成在第一电极上的第一磁性层,形成在第一磁性层上的非磁性层和形成在非磁性层上的第二磁性层。 第一电极的平均表面粗糙度等于或小于0.3nm。 由于第一电极具有如此小的平均表面粗糙度,所以形成在第一电极层上的非磁性层变扁平化,从而防止了电流泄漏。 第一电极由具有强粘合强度的Ta,Zr,Ti,Hf,W,Mo,Y,V,Nb,Au,Ag,Pd和Pt中的至少一种制成。 由于第一电极具有强的结合强度,所以不会发生第一电极与接触第一电极的层的剥离。