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    • 72. 发明授权
    • Work vehicle with hydrostatic steering system
    • 具有静液压转向系统的工作车辆
    • US07246670B2
    • 2007-07-24
    • US11040594
    • 2005-01-21
    • Kazuhiko HayashiMitsuaki Nakamura
    • Kazuhiko HayashiMitsuaki Nakamura
    • B62D6/08
    • F16H61/468B62D5/07B62D11/183E02F9/2235E02F9/225E02F9/2253E02F9/2296F16H61/431F16H61/433F16H2059/467
    • A work vehicle with a hydrostatic steering system is disclosed which is capable of performing optimum control of the absorption torque of a hydraulic pump according to running load; capable of preferentially ensuring turning performance and implement speed when running load is relatively low; and capable of ensuring desired turning performance even when running load is relatively high. To this end, a bulldozer with a hydrostatic steering system, wherein the power of a hydraulic motor driven by pressure oil fed from a hydraulic pump operated by an engine is transmitted to right and left crawler tracks through a differential steering means composed of planetary gear trains etc., is designed to control the absorption torque of the hydraulic pump according to the speed ratio of a torque converter calculated by a speed ratio operation unit.
    • 公开了一种具有静液压转向系统的工作车辆,其能够根据运行载荷对液压泵的吸收转矩进行最佳控制; 能够优先确保转向性能,运行负载时执行转速相对较低; 并且即使当运行负载相对较高时也能够确保期望的转向性能。 为此,具有静液压转向系统的推土机,其中由从由发动机操作的液压泵供给的压力油驱动的液压马达的动力通过由行星齿轮系组成的差速转向装置传递到左右履带履带 被设计成根据由变速比运算单元计算的变矩器的转速比来控制液压泵的吸收转矩。
    • 74. 发明申请
    • Superconducting coil and superconducting apparatus
    • 超导线圈和超导装置
    • US20060057381A1
    • 2006-03-16
    • US11003374
    • 2004-12-06
    • Naoki AyaiRyosuke HataHiromi TakeiKazuhiko HayashiTakeshi Hikata
    • Naoki AyaiRyosuke HataHiromi TakeiKazuhiko HayashiTakeshi Hikata
    • D02G3/40D02G3/00
    • H01R4/68H01F6/06H01L39/02Y10T428/2922Y10T428/2924Y10T428/2929Y10T428/2931Y10T428/2933Y10T428/2973Y10T428/2991
    • A method of manufacturing an oxide superconducting wire which can manufacture the longest possible wire by connecting relatively short wires with each other and is capable of suppressing reduction of a critical current resulting from influence by strain when the wires connected with each other are bent, an oxide superconducting wire, a superconducting coil and a superconducting apparatus are provided. According to the method of manufacturing an oxide superconducting wire by superposing end portions of two oxide superconducting wires with each other thereby bonding the end portions and connecting the oxide superconducting wires with each other, a junction formed by superposing the end portions with each other is so worked as to reduce the quantity of strain on an end of the junction when the two oxide superconducting wires and connected with each other are bent. Each of the oxide superconducting wire, the superconducting coil and the superconducting apparatus has the aforementioned junction, and the quantity of strain on the end of the junction is reduced in the aforementioned manner.
    • 一种制造氧化物超导线的方法,其可以通过相对短的线彼此连接来制造最长的线,并且当彼此连接的线弯曲时能够抑制由应变的影响引起的临界电流的降低,氧化物 超导线,超导线圈和超导装置。 根据通过将两个氧化物超导线的端部彼此叠置从而结合端部并将氧化物超导线彼此连接来制造氧化物超导线的方法,通过将端部彼此重叠而形成的接合是如此 用于当两个氧化物超导线彼此连接时弯曲的结点的端部处的应变量减少。 氧化物超导线,超导线圈和超导装置中的每一个具有上述结,并且以上述方式减小了结端部的应变量。
    • 76. 发明授权
    • Magnetoresistive element and device utilizing magnetoresistance effect
    • 磁阻元件和利用磁阻效应的器件
    • US06724585B2
    • 2004-04-20
    • US09398773
    • 1999-09-20
    • Kazuhiko Hayashi
    • Kazuhiko Hayashi
    • G11B539
    • B82Y25/00G01R33/093G11B5/3916G11B5/3967H01F10/3204H01F10/3254H01F10/3268
    • The present invention provides a magnetoresistive device including a multi-layered structure of a free magnetic layer, a non-magnetic non-conductive layer in contact with the free magnetic layer, a pinned layer in contact with the non-magnetic non-conductive layer, and a pinning layer in contact with the pinned layer for pinning a magnetization direction of the pinned layer, wherein at least any one of the free magnetic layer and the pinned layer has an interface region abutting the non-magnetic non-conductive layer, and at least a part of the interface region includes at least one material selected from the group consisting of CoFeB, CoZrMo, CoZrNb, CoZr, CoZrTa, CoHf, CoTa, CoTaHf, CoFeTi, CoNbHf, CoHfPd, CoTaZrNb, and CoZrMoNi.
    • 本发明提供一种磁阻器件,其包括自由磁性层的多层结构,与自由磁性层接触的非磁性非导电层,与非磁性非导电层接触的被钉扎层, 以及与被钉扎层接触以固定钉扎层的磁化方向的钉扎层,其中自由磁性层和被钉扎层中的至少任一个具有邻接非磁性非导电层的界面区域,并且在 界面区域的至少一部分包括选自CoFeB,CoZrMo,CoZrNb,CoZr,CoZrTa,CoHf,CoTa,CoTaHf,CoFeTi,CoNbHf,CoHfPd,CoTaZrNb和CoZrMoNi中的至少一种材料。
    • 77. 发明授权
    • Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus
    • 磁阻传感器,磁阻磁头和磁记录/重放装置
    • US06714374B1
    • 2004-03-30
    • US09652821
    • 2000-08-31
    • Kazuhiko HayashiKeishi OhashiStuart SolinTao Zhou
    • Kazuhiko HayashiKeishi OhashiStuart SolinTao Zhou
    • G11B503
    • G11B5/3993G01R33/09G11B5/00G11B5/378G11B2005/0008G11B2005/0016H01L43/08
    • A magnetoresistive sensor includes a magnetoresistive element and equipment which generates a magnetic field in the magnetoresistive element thereby inducing a biasing magnetic field in the element, where the magnetoresistive element comprises a high electron mobility semiconductor and electrodes which are connected to the semiconductor. If it is an insulator, the equipment, which generates the biasing magnetic field and supplies it to the magnetoresistive element, may contact directly to the magnetoresistive element. If it is a conductor, an insulating separation layer must be set between the equipment and the element. A magnetoresistive element is representatively Corbino disk type or a bar type magnetoresistive element. Another candidate of the magnetoresistive element is an element consisting of a high electron mobility semiconductor, a pair of electrodes which make a current path in the high electron mobility semiconductor, and another pair of electrodes to detect the induced voltage by the current.
    • 磁阻传感器包括磁阻元件和在磁阻元件中产生磁场的设备,从而在元件中产生偏置磁场,其中磁阻元件包括高电子迁移率半导体和连接到半导体的电极。 如果它是绝缘体,则产生偏置磁场并将其提供给磁阻元件的设备可以直接接触磁阻元件。 如果是导体,必须在设备和元件之间设置绝缘分离层。 磁阻元件是代表性的Corbino盘型或棒式磁阻元件。 磁阻元件的另一个候选物是由高电子迁移率半导体,在高电子迁移率半导体中形成电流路径的一对电极以及用电流检测感应电压的另一对电极组成的元件。
    • 78. 发明授权
    • Magneto-resistive sensor with ZR base layer and method of fabricating the same
    • 具有ZR基层的磁阻传感器及其制造方法
    • US06664784B1
    • 2003-12-16
    • US09448174
    • 1999-11-24
    • Kazuhiko Hayashi
    • Kazuhiko Hayashi
    • G01R3302
    • B82Y25/00B82Y10/00G01R33/093G11B5/3143G11B5/3903G11B5/3967G11B2005/3996
    • There is provided a magneto-resistive sensor including (a) a multi-layered structure including a base layer, a magnetic layer, and a non-magnetic layer, the magnetic and non-magnetic layers being deposited on or above the base layer, the multi-layered structure having a sense region therein, and (b) a pair of electrode layers electrically connected to the sense region at its opposite sides, the electrode layers leading a sense current into the sense region at one side thereof and leading the sense current out of the sense region through the other side thereof, the magneto-resistive sensor detecting a magnetic field in accordance with fluctuation in a resistance in the sense region, the base layer being composed of zirconium (Zr) or alloy thereof. The magneto-resistive sensor makes it possible to provide a magneto-resistive layer having crystallinity superior to almost the same degree as crystallinity obtained when a base layer is composed of Ta, and to ensure a high resistance-change ratio.
    • 提供了一种磁阻传感器,其包括(a)包括基层,磁性层和非磁性层的多层结构,磁性层和非磁性层沉积在基层上或上层, 多层结构,其中具有感测区域,以及(b)一对电极层,其电连接到其相对侧的感测区域,电极层将感测电流引导到其一侧的感测区域中,并引导感测电流 通过其另一侧在感测区域之外,磁阻传感器根据感测区域中的电阻的波动来检测磁场,基底层由锆(Zr)或其合金构成。 磁阻传感器使得可以提供一种具有优异的结晶度的磁阻层,该结晶度几乎与基底层由Ta构成的结晶度相同,并且确保高的电阻变化率。