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    • 75. 发明授权
    • Fine pattern forming method
    • 精细图案形成方法
    • US5476753A
    • 1995-12-19
    • US238793
    • 1994-05-06
    • Kazuhiko HashimotoMasayuki Endo
    • Kazuhiko HashimotoMasayuki Endo
    • G03F7/004G03F7/075G03C5/00
    • G03F7/0754G03F7/0045Y10S430/143
    • A high polymer organic film is applied as a bottom layer to a semiconductor silicon substrate. Then, a material including an acid generator and a polysilane resin insoluble in an alkaline solution is applied to the bottom layer as an electron beam resist layer. The polysilane resin includes a Si--Si bond or Si--O bond in a principle chain and a substituted hydroxy group expressed as --OR in a side chain wherein R denotes a substitution group of hydrocarbon. The acid generator generates an acid when irradiated with an electron beam. Then, a pattern is formed with an electron beam in the photosensitive layer, and it is developed with an alkaline solution. Then, by using the resist pattern as a mask, the bottom layer is etched. Thus, a fine resist pattern of correct high aspect ratio can be formed easily.
    • 将高分子有机膜作为底层施加到半导体硅衬底。 然后,作为电子束抗蚀剂层,将作为酸性发生剂和不溶于碱性溶液的聚硅烷树脂的材料涂布在底层。 聚硅烷树脂在原料链中包含Si-Si键或Si-O键,在侧链中表示为-OR的取代羟基,其中R表示烃的取代基。 当用电子束照射时酸产生器产生酸。 然后,在感光层中形成有电子束的图案,并用碱性溶液显影。 然后,通过使用抗蚀剂图案作为掩模,蚀刻底层。 因此,可以容易地形成具有正确高纵横比的精细抗蚀剂图案。
    • 77. 发明授权
    • Compound, resin, resist composition and method for producing resist pattern
    • 化合物,树脂,抗蚀剂组合物和抗蚀剂图案的制造方法
    • US08431325B2
    • 2013-04-30
    • US12873919
    • 2010-09-01
    • Kazuhiko HashimotoKoji Ichikawa
    • Kazuhiko HashimotoKoji Ichikawa
    • G03F7/039G03F7/40C07C69/54C07C69/74C08F216/38C08F22/14
    • C07C69/84C07C69/54C07C69/96C07C2603/74C08F20/30G03F7/0045G03F7/0046G03F7/0397
    • A compound of the present invention is represented by the formula (A); wherein R1 represents a hydrogen atom or a C1 to C6 alkyl group; Z1 represents a single bond, —CO—O—* or —CO—O—(CH2)k—CO—O—*; Z2 represents a single bond, *—O—CO—, *—CO—O—, *—O—(CH2)k—CO—, *—CO—(CH2)k—O—, *—O—(CH2)k—CO—O—, *—O—CO—(CH2)k—O— or *—O—CO—(CH2)k—O—CO—; k represents an integer of 1 to 6; * represents a binding position to W; W represents a C4 to C36 (n+1) valent alicyclic hydrocarbon group or a C6 to C18 (n+1) valent aromatic hydrocarbon group, one or more hydrogen atoms contained in the alicyclic hydrocarbon group and the aromatic hydrocarbon group may be replaced by a halogen atom, a C1 to C12 alkyl group, a C1 to C12 alkoxy group, a C2 to C4 acyl group or —OR10; R10 represents a hydrogen atom or a group represented by the formula (R2-2); R2 represents a hydrogen atom, a group represented by the formula (R2-1) or (R2-2); n represents an integer of 1 to 3; R4, R5 and R6 independently represent a C1 to C12 hydrocarbon group; R7 and R8 independently represent a hydrogen atom or a C1 to C12 hydrocarbon group; R9 represents a C1 to C14 hydrocarbon group.
    • 本发明的化合物由式(A)表示; 其中R1表示氢原子或C1-C6烷基; Z1表示单键,-CO-O- *或-CO-O-(CH2)k-CO-O- *; Z2表示单键,* -O-CO-,* -CO-O-,* -O-(CH2)k-CO-,* -CO-(CH2)kO-,* -O-(CH2)k -CO-O-,* -O-CO-(CH2)kO-或* -O-CO-(CH2)kO-CO-; k表示1〜6的整数, *表示与W的绑定位置; W表示C 4〜C 36(n + 1)价的脂环式烃基或C 6〜C 18(n + 1)价芳香族烃基,脂环式烃基和芳香族烃基所含有的1个以上氢原子可以被 卤素原子,C1〜C12烷基,C1〜C12烷氧基,C2〜C4酰基或-OR10; R 10表示氢原子或式(R2-2)表示的基团。 R2表示氢原子,式(R2-1)或(R2-2)表示的基团; n表示1〜3的整数, R4,R5和R6独立地表示C1〜C12烃基; R7和R8独立地表示氢原子或C1〜C12烃基; R9表示C1〜C14烃基。