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71. 发明授权

US06951584B2 Apparatus for producing semiconductor thin films on moving substrates 失效
标题翻译：用于在移动基板上制造半导体薄膜的装置
公开(公告)号：US06951584B2
公开(公告)日：2005-10-04
申请号：US10364517
申请日：2003-02-12
申请人： Noritaka Ukiyo , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Masaaki Iwane , Masaki Mizutani
发明人： Noritaka Ukiyo , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Masaaki Iwane , Masaki Mizutani
IPC分类号： C30B19/06 , C30B31/04
CPC分类号： C30B29/06 , C30B19/062
摘要： An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.
摘要翻译：一种用于制造半导体薄膜的装置，其中通过将多个基板浸入填充在坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液包含半导体作为溶质，同时将其移动解决方案。每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动。

72. 发明申请

US20050087226A1 Electrode arranging method 审中-公开
标题翻译：电极排列方法
公开(公告)号：US20050087226A1
公开(公告)日：2005-04-28
申请号：US10957577
申请日：2004-10-05
申请人： Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： H01L21/28 , H01L31/00 , H01L31/04
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The method of arranging an electrode according to the present invention includes: arranging an electrode material (103) for forming a eutectic with silicon on a silicon base (101) having unevenness; heating the silicon base (101) at a temperature equal to or higher than a eutectic temperature of the silicon and the electrode material (103); and cooling the silicon base (101) to flatten the unevenness on a surface of the silicon base just under the arranged electrode material (103). The present invention can provide a method of arranging an electrode on an uneven surface, which is a simple method and enables mass-production, and more particularly a method of arranging an electrode on a surface of a solar cell which can realize high efficiency of the solar cell.
摘要翻译：根据本发明的电极布置方法包括：在具有不平坦度的硅基底（101）上布置用于与硅形成共晶的电极材料（103）; 在等于或高于硅和电极材料（103）的共晶温度的温度下加热硅基底（101）; 并且冷却硅基底（101）以使正好在布置的电极材料（103）下面的硅基底的表面上的凹凸变平。本发明可以提供一种在不平坦表面上设置电极的方法，这是一种简单的方法并且可以批量生产，更具体地说，一种在太阳能电池的表面上设置电极的方法，其可以实现高效率太阳能电池。

73. 发明授权

US5403751A Process for producing a thin silicon solar cell 失效
标题翻译：薄硅太阳能电池的制造方法
公开(公告)号：US5403751A
公开(公告)日：1995-04-04
申请号：US262381
申请日：1994-06-20
申请人： Shoji Nishida , Kenji Yamagata
发明人： Shoji Nishida , Kenji Yamagata
IPC分类号： H01L21/20 , H01L31/0224 , H01L31/18 , H01L21/329
CPC分类号： H01L31/022425 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S117/915 , Y10S148/153
摘要： A process for the production of a solar cell, characterized in that the surface of a silicon wafer is periodically exposed through minute spaced portions of an insulating layer formed on the silicon wafer; crystal growth is performed until monocrystalline silicon regions caused at the spaced portions by way of selective epitaxial growth and lateral crystal growth become collided with each other; the insulating layer is removed through gaps left among the monocrystals; a resin is embedded in the gaps; an electrode layer is formed over the surfaces of the monocrystalline silicon regions; the surface of the electrode layer is fastened to a substrate through a resin; a body comprising the monocrystalline silicon regions is separated from the silicon wafer; and a counter electrode is disposed to the monocrystalline silicon regions.
摘要翻译：一种用于制造太阳能电池的方法，其特征在于，硅晶片的表面通过在硅晶片上形成的绝缘层的微小间隔部分周期性地暴露; 进行晶体生长，直到通过选择性外延生长和横向晶体生长在间隔部分处引起的单晶硅区域相互碰撞; 通过在单晶中留下的间隙去除绝缘层; 树脂嵌入在间隙中; 在单晶硅区域的表面上形成电极层; 电极层的表面通过树脂固定在基板上; 包括单晶硅区域的主体与硅晶片分离; 并且对电极设置在单晶硅区域。

74. 发明授权

US4456304A Shield tunneling machine and earth removing apparatus therefor 失效
标题翻译：盾构隧道掘进机及其拆除装置
公开(公告)号：US4456304A
公开(公告)日：1984-06-26
申请号：US382708
申请日：1982-05-27
申请人： Tadao Yoshikawa , Shoji Nishida
发明人： Tadao Yoshikawa , Shoji Nishida
IPC分类号： B65G33/14 , E21D9/08 , E21D9/087 , E21D9/12
CPC分类号： E21D9/124 , E21D9/087 , E21D9/12
摘要： An earth removing apparatus for a shield tunneling machine comprising a tubular casing having an excavated earth inlet at one end and a closable outlet for excavated earth at the other end, and a double-shaft screw conveyor rotatably supported by the casing at two portions. The screw conveyor is supported on the casing in the vicinity of its earth inlet by an annular member fitted in an annular recess in the casing, with a bearing provided between the annular member and the casing. Since the forward end of the screw conveyor need not be supported at the center of rotation of the cutter head of the tunneling machine, the apparatus can be designed with greater freedom and is free of objections in its mechanical structure.
摘要翻译：一种用于盾构隧道掘进机的除土装置，包括一端具有挖土的入口的管状壳体和另一端用于挖土的可关闭出口，以及由两壳体可旋转地支承在壳体上的双轴螺旋输送机。螺旋输送机通过安装在壳体中的环形凹部中的环形构件支撑在壳体附近的其接地入口附近，其中轴承设置在环形构件和壳体之间。由于螺旋输送机的前端不需要在隧道机的切割头的旋转中心处被支撑，因此该设备可以被设计成更大的自由度，并且在其机械结构中没有异议。

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