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71. 发明申请

US20050148143A1 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same 有权
标题翻译：具有低介电常数的半导体器件的绝缘层的沉积方法，使用其的薄膜晶体管基板及其制造方法
公开(公告)号：US20050148143A1
公开(公告)日：2005-07-07
申请号：US11071544
申请日：2005-03-03
申请人： Sung-Hoon Yang , Wan-Shick Hong , Kwan-Wook Jung
发明人： Sung-Hoon Yang , Wan-Shick Hong , Kwan-Wook Jung
IPC分类号： G02F1/1368 , C23C16/30 , C23C16/42 , G02F1/1362 , H01L21/205 , H01L21/312 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/56
CPC分类号： G02F1/136227 , C23C16/30 , G02F2001/136222 , H01L27/12 , H01L27/1248 , H01L27/1288 , H01L27/3244 , H01L29/458 , H01L29/4908 , H01L51/56
摘要： The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.
摘要翻译：本发明涉及一种用于气相沉积低介电绝缘膜的方法，使用其的薄膜晶体管及其制备方法，更具体地涉及可以显着改善蒸气的低介电绝缘膜的气相沉积方法同时保持低介电绝缘膜的性能，从而解决了寄生电容问题，以实现高开口率结构，并且通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时可以减少处理时间，以形成用于半导体器件的保护膜。本发明还涉及使用该方法及其制备方法的薄膜晶体管。

72. 发明授权

US09116566B2 Liquid crystal display device having touch sensor 有权
标题翻译：具有触摸传感器的液晶显示装置
公开(公告)号：US09116566B2
公开(公告)日：2015-08-25
申请号：US12917940
申请日：2010-11-02
申请人： Sang-Youn Han , Yeon-Sik Ham , Sung-Hoon Yang , Keun-Chan Oh , Hee-Hwan Lee
发明人： Sang-Youn Han , Yeon-Sik Ham , Sung-Hoon Yang , Keun-Chan Oh , Hee-Hwan Lee
IPC分类号： G06F3/041 , G06F3/044 , G06F3/045 , G09G3/36
CPC分类号： G06F3/0412 , G06F3/044 , G06F3/045 , G06F2203/04103 , G09G3/36
摘要： A liquid crystal display having a touch screen panel (TSP) function includes a sensor unit formed on the first substrate; a first sensor wire disposed on the first substrate and a second sensor wire extending perpendicular to the first sensor wire, wherein the sensor unit includes a first sensor electrode connected to the first sensor wire and a second sensor electrode connected to the second sensor wire, wherein said first sensor electrode and said second sensor electrode connect when touched, and said first and second sensor wires confirm a touch position by transmitting a sensing current through the connection between the first sensor electrode and the second sensor electrode, a trench is formed near the sensor unit and a silicon protrusion pattern to increase the sensitivity of the touch screen panel.
摘要翻译：具有触摸屏面板（TSP）功能的液晶显示器包括形成在第一基板上的传感器单元; 设置在第一基板上的第一传感器线和垂直于第一传感器线延伸的第二传感器线，其中传感器单元包括连接到第一传感器线的第一传感器电极和连接到第二传感器线的第二传感器电极，其中所述第一传感器电极和所述第二传感器电极在被触摸时连接，并且所述第一和第二传感器线通过传递感测电流通过第一传感器电极和第二传感器电极之间的连接来确认触摸位置，在传感器附近形成沟槽单元和硅突起图案以增加触摸屏面板的灵敏度。

73. 发明授权

US09087750B2 Touch screen substrate, method of manufacturing the same, and display panel including the touch screen substrate 有权
标题翻译：触摸屏基板，其制造方法以及包括触摸屏基板的显示面板
公开(公告)号：US09087750B2
公开(公告)日：2015-07-21
申请号：US12898839
申请日：2010-10-06
申请人： Woong-Kwon Kim , Jung-Suk Bang , Sung-Hoon Yang , Sang-Youn Han , Suk-Won Jung , Byeong-Hoon Cho , Dae-Cheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Seung-Mi Seo , Kun-Wook Han , Mi-Seon Seo
发明人： Woong-Kwon Kim , Jung-Suk Bang , Sung-Hoon Yang , Sang-Youn Han , Suk-Won Jung , Byeong-Hoon Cho , Dae-Cheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Seung-Mi Seo , Kun-Wook Han , Mi-Seon Seo
IPC分类号： G06F3/042 , H01L27/12 , G06F3/041
CPC分类号： H01L27/1251 , G06F3/0412 , G06F3/042 , H01L27/1222 , H01L27/1233
摘要： A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.
摘要翻译：触摸屏基板包括基底，第一开关元件和感测红外光的第一感测元件。第一开关元件包括第一开关栅电极，设置在第一开关栅电极上的第一有源图案，设置在第一有源图案上的第一开关源极和与第一开关源电极分开设置的第一开关漏电极。第一感测元件包括连接到第一开关源电极的第一感测漏电极，与第一感测漏电极分开设置的第一感测源电极，设置在第一感测漏电极和第一感测源电极下方的第二有源图案，以及包括第一非晶层，掺杂非晶层和第二非晶层，以及设置在第一感测漏电极和第一感测源电极上的第一感测栅电极。

74. 发明授权

US08698733B2 Electrophoretic display and method for driving the same 失效
标题翻译：电泳显示及其驱动方法
公开(公告)号：US08698733B2
公开(公告)日：2014-04-15
申请号：US12157139
申请日：2008-06-06
申请人： Sung-Jin Hong , Il-Pyung Lee , Jae-Byung Park , Yong-Woo Lee , Sung-Hoon Yang
发明人： Sung-Jin Hong , Il-Pyung Lee , Jae-Byung Park , Yong-Woo Lee , Sung-Hoon Yang
IPC分类号： G09G3/30 , G09G5/00 , G06T15/50 , G06T15/00 , G09G5/10 , G09G5/02 , G02B26/00
CPC分类号： G09G3/344 , G09G2300/08 , G09G2310/0251 , G09G2310/063 , G09G2310/068 , G09G2320/0209 , G09G2320/0233 , G09G2320/0257
摘要： Disclosed is an electrophoretic display and a method for driving the electrophoretic display. The method for driving the electrophoretic display, which includes a first electrode, a second electrode, and an electrophoretic layer including electrophoretic particles disposed in a plurality of pixels receiving the voltage for driving from the first electrode and the second electrode and provided between the first electrode and the second electrode includes applying a reset voltage to the pixels, applying a reset compensation voltage including reversed polarity to the reset voltage to the pixels, applying an image display voltage including the same or different polarity during a predetermined time between the neighboring pixels, and applying an image display compensation voltage including reversed polarity to the image display voltage to the pixels during a predetermined time. The foregoing method provides a potential distribution which is symmetrical in the boundary region between the neighboring pixels such that the display size of the real image of each of the pixels is uniform and an afterimage may be prevented, thereby improving the display performance.
摘要翻译：公开了电泳显示器和驱动电泳显示器的方法。用于驱动电泳显示器的方法包括第一电极，第二电极和电泳层，该电泳层包括设置在多个像素中的电泳颗粒，所述电泳颗粒接收用于从第一电极和第二电极驱动的电压，并且设置在第一电极并且所述第二电极包括向所述像素施加复位电压，向所述像素施加包括与所述复位电压相反的极性的复位补偿电压，在相邻像素之间的预定时间期间施加包括相同或不同极性的图像显示电压，以及在预定时间期间将包括反极性的图像显示补偿电压施加到图像显示电压到像素。上述方法提供了在相邻像素之间的边界区域中对称的电位分布，使得每个像素的实像的显示尺寸是均匀的，并且可以防止残像，从而提高显示性能。

75. 发明授权

US08647928B2 Method for manufacturing thin film transistor and liquid crystal by treating a surface layer 有权
标题翻译：通过处理表面层制造薄膜晶体管和液晶的方法
公开(公告)号：US08647928B2
公开(公告)日：2014-02-11
申请号：US11646126
申请日：2006-12-27
申请人： Sang-Woo Whangbo , Shi-Yul Kim , Sung-Hoon Yang , Woo-Geun Lee
发明人： Sang-Woo Whangbo , Shi-Yul Kim , Sung-Hoon Yang , Woo-Geun Lee
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1288
摘要： A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.
摘要翻译：薄膜晶体管基板包括基底基板，栅极电极，栅极绝缘层，表面处理层，有源层，源电极和漏电极。栅电极形成在基底基板上。栅极绝缘层形成在基底基板上以覆盖栅电极。通过用含氮气体处理栅极绝缘层，在栅极绝缘层上形成表面处理层，以防止漏电流。在表面处理层上形成有源层以覆盖栅电极。在有源层上形成彼此隔开预定距离的源电极和栅电极。

76. 发明申请

US20120032169A1 Visible ray sensor and light sensor including the same 有权
标题翻译：可见光线传感器和光传感器包括相同的
公开(公告)号：US20120032169A1
公开(公告)日：2012-02-09
申请号：US12929064
申请日：2010-12-28
申请人： Sang-Youn Han , Jun-Ho Song , Kyung-Sook Jeon , Mi-Seon Seo , Sung-Hoon Yang , Suk-Won Jung , Seung Mi Seo
发明人： Sang-Youn Han , Jun-Ho Song , Kyung-Sook Jeon , Mi-Seon Seo , Sung-Hoon Yang , Suk-Won Jung , Seung Mi Seo
IPC分类号： H01L31/112 , H01L31/0368 , H01L31/0376
CPC分类号： H01L31/1129 , G02F1/13318 , H01L31/03762 , Y02E10/548
摘要： The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.
摘要翻译：本发明涉及能够通过防止光降解而提高光敏度的可见光线传感器和光传感器。可见光线传感器可以包括：衬底，形成在衬底上的遮光构件，以及形成在遮光构件上的可见光线感测薄膜晶体管。遮光构件可以由透明电极，带通滤光器或不透明金属制成。

77. 发明授权

US07902549B2 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same 有权
标题翻译：具有低介电常数的半导体器件的绝缘层的沉积方法，使用其的薄膜晶体管基板及其制造方法
公开(公告)号：US07902549B2
公开(公告)日：2011-03-08
申请号：US11950476
申请日：2007-12-05
申请人： Sung-Hoon Yang , Wan-Shick Hong , Kwan-Wook Jung
发明人： Sung-Hoon Yang , Wan-Shick Hong , Kwan-Wook Jung
IPC分类号： H01L31/036
CPC分类号： G02F1/136227 , C23C16/30 , G02F2001/136222 , H01L27/12 , H01L27/1248 , H01L27/1288 , H01L27/3244 , H01L29/458 , H01L29/4908 , H01L51/56
摘要： The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.
摘要翻译：本发明涉及一种用于气相沉积低介电绝缘膜的方法，使用其的薄膜晶体管及其制备方法，更具体地涉及可以显着改善蒸气的低介电绝缘膜的气相沉积方法同时保持低介电绝缘膜的性能，从而解决了寄生电容问题，以实现高开口率结构，并且通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时可以减少处理时间，以形成用于半导体器件的保护膜。本发明还涉及使用该方法及其制备方法的薄膜晶体管。

78. 发明申请

US20080278214A1 Method for removing noise, switching circuit for performing the same and display device having the switching circuit 有权
标题翻译：消除噪声的方法，执行该噪声的开关电路以及具有开关电路的显示装置
公开(公告)号：US20080278214A1
公开(公告)日：2008-11-13
申请号：US12079830
申请日：2008-03-27
申请人： Soo-Wan Yoon , Sung-Hoon Yang , Chong-Chul Chai , So-Woon Kim , Chang-Hyeon Shin
发明人： Soo-Wan Yoon , Sung-Hoon Yang , Chong-Chul Chai , So-Woon Kim , Chang-Hyeon Shin
IPC分类号： H03K17/16 , G09G3/36
CPC分类号： H03K17/162 , G09G3/3677 , G09G2320/041 , G09G2330/06
摘要： A method for removing noise of a gate signal that is outputted from a gate driving circuit including a plurality of stages, the method includes electrically connecting two terminals of two adjacent stages that have noise components opposite in phase to each other during a first period, and electrically disconnecting the two terminals of the two adjacent stages that have the noise components opposite in phase to each other during a second period.
摘要翻译：一种从包括多个级的栅极驱动电路输出的门信号的噪声去除方法，该方法包括在第一时段期间将具有与相位相反的噪声分量的两个相邻级的两个端子电连接，在第二时段期间将具有相位相反的噪声分量的两个相邻级的两个端子彼此电断开。

79. 发明授权

US07369690B2 Apparatus for recognizing an image 有权
标题翻译：用于识别图像的装置
公开(公告)号：US07369690B2
公开(公告)日：2008-05-06
申请号：US10660750
申请日：2003-09-12
申请人： In-Soo Joo , Joon-Hoo Choi , Sung-Hoon Yang , Beohm-Rock Choi
发明人： In-Soo Joo , Joon-Hoo Choi , Sung-Hoon Yang , Beohm-Rock Choi
IPC分类号： G06K9/00 , G05B19/00
CPC分类号： G06K9/00899 , G06K9/0002
摘要： In a fingerprint recognition apparatus, a first recognition section is formed on a center portion of a transparent substrate and a second recognition section is formed on the transparent substrate adjacent to the first recognition section. The first recognition section recognizes an image pattern from an object making contact with the transparent substrate to generate a first recognition signal and the second recognition section senses a biological signal so as to check whether or not the first recognition signal is obtained from a human being. Accordingly, the fingerprint recognition apparatus may check that whether or not the object having the image pattern is obtained from a human being, thereby recognizing the image pattern with high accuracy and improving reliability thereof.
摘要翻译：在指纹识别装置中，在透明基板的中央部形成有第一识别部，在与第一识别部相邻的透明基板上形成第二识别部。第一识别部识别来自与透明基板接触的物体的图像图案，以产生第一识别信号，并且第二识别部分感测生物信号，以便检查是否从人获得第一识别信号。因此，指纹识别装置可以检查是否从人获得具有图像图案的对象，从而以高精度识别图像图案并提高其可靠性。

80. 发明申请

US20070002198A1 Thin film transistor array panel and method for manufacturing the same 审中-公开
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20070002198A1
公开(公告)日：2007-01-04
申请号：US11444954
申请日：2006-05-31
申请人： Sung-Hoon Yang , Won-Suk Shin , Byoung-June Kim
发明人： Sung-Hoon Yang , Won-Suk Shin , Byoung-June Kim
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/136295 , H01L27/124 , H01L29/4908
摘要： The present invention provides a thin film transistor array panel comprising a substrate; a gate line containing Ag formed on the substrate at a low temperature to prevent agglomeration, a first gate insulating layer formed on the gate line, a second gate insulating layer formed on the first gate insulating layer, a data line perpendicularly intersecting the gate line, and a thin film transistor connected to the gate line and the data line, and a manufacturing method thereof.
摘要翻译：本发明提供一种薄膜晶体管阵列板，其包括基板; 在低温下形成在基板上的Ag以防止凝聚的栅极线，形成在栅极线上的第一栅极绝缘层，形成在第一栅极绝缘层上的第二栅极绝缘层，与栅极线垂直相交的数据线，以及连接到栅极线和数据线的薄膜晶体管及其制造方法。

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