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71. 发明申请

US20090267198A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR 有权
标题翻译：半导体器件，制造半导体器件的方法和制造半导体器件
公开(公告)号：US20090267198A1
公开(公告)日：2009-10-29
申请号：US12299375
申请日：2007-05-16
申请人： Munehiro Tada , Hiroto Ohtake , Fuminori Ito , Yoshihiro Hayashi , Hironori Yamamoto
发明人： Munehiro Tada , Hiroto Ohtake , Fuminori Ito , Yoshihiro Hayashi , Hironori Yamamoto
IPC分类号： H01L29/06 , H01L21/768 , B05C11/00 , C23F1/08
CPC分类号： H01L23/53295 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76807 , H01L21/76808 , H01L21/76814 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.
摘要翻译：本发明提供了一种多层布线技术，其中在布线之间保持有效的低电容的同时获得了布线之间的高粘合性和高绝缘可靠性。半导体器件的特征在于，第一绝缘膜是由至少一层包含含有硅，氧和碳的硅氧烷结构的层形成的绝缘膜; 第一绝缘膜的内部的硅氧烷结构含有比硅原子数多的碳原子数; 并且在第一绝缘膜和金属之间的界面中的至少一个上形成有含有比第一绝缘膜的内部少的碳原子数和更多数量的单位体积的氧原子的改性层，第一绝缘膜和第二绝缘膜之间的界面。

72. 发明申请

US20090265446A1 Content delivery apparatus and content delivery method using the same 有权
标题翻译：内容传送装置和使用其的内容传送方法
公开(公告)号：US20090265446A1
公开(公告)日：2009-10-22
申请号：US12216208
申请日：2008-07-01
申请人： Yoshihiro Hayashi , Tadashi Takeuchi
发明人： Yoshihiro Hayashi , Tadashi Takeuchi
IPC分类号： G06F15/16
CPC分类号： H04N7/17318 , H04N21/21 , H04N21/23 , H04N21/262
摘要： A content delivery system includes a delivery server, a storage apparatus having a logical unit for storing data regarding content items, and a management apparatus having a content management unit for managing a delivery server. The delivery server includes a conversion unit and a delivery unit. The conversion units acquires original data regarding a content item from an external origin server in response to a content addition request from the content management unit, converts the original data to data for delivery, and stores the content data for delivery in the first logical unit. The delivery unit reads, in response to a content delivery request from the client, the data for delivery from the logical unit and transmits it to the client.
摘要翻译：内容传送系统包括传送服务器，具有用于存储关于内容项的数据的逻辑单元的存储装置，以及具有用于管理传送服务器的内容管理单元的管理装置。递送服务器包括转换单元和递送单元。转换单元响应于来自内容管理单元的内容添加请求从外部来源服务器获取关于内容项的原始数据，将原始数据转换为要传送的数据，并将用于传送的内容数据存储在第一逻辑单元中。交付单元响应于来自客户端的内容递送请求从逻辑单元读取用于传送的数据并将其发送给客户端。

73. 发明申请

US20090246538A1 METHOD OF FORMING A POROUS INSULATION FILM 有权
标题翻译：形成多孔绝缘膜的方法
公开(公告)号：US20090246538A1
公开(公告)日：2009-10-01
申请号：US12374390
申请日：2007-07-23
申请人： Hironori Yamamoto , Fuminori Ito , Munehiro Tada , Yoshihiro Hayashi
发明人： Hironori Yamamoto , Fuminori Ito , Munehiro Tada , Yoshihiro Hayashi
IPC分类号： B32B9/00 , H01L21/312 , C07F7/21
CPC分类号： C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/3124 , H01L21/31633 , H01L21/31695 , H01L21/7682 , H01L21/76835 , H01L2221/1047 , Y10T428/31663
摘要： A method of forming a porous insulation film uses an organic silica material gas having a 3-membered SiO cyclic structure and a 4-membered SiO cyclic structure, or an organic silica material gas having a 3-membered SiO cyclic structure and a straight-chain organic silica structure, and uses a plasma reaction in the filming process. A porous interlevel dielectric film having a higher strength and a higher adhesive property can be obtained.
摘要翻译：形成多孔绝缘膜的方法使用具有3元SiO环状结构和4元SiO环状结构的有机二氧化硅材料气体或具有3元SiO环状结构和直链的有机二氧化硅材料气体有机二氧化硅结构，并且在成膜过程中使用等离子体反应。可以获得具有更高强度和更高粘附性的多孔层间电介质膜。

74. 发明申请

US20090014887A1 METHOD OF PRODUCING MULTILAYER INTERCONNECTION AND MULTILAYER INTERCONNECTION STRUCTURE 审中-公开
标题翻译：生产多层互连和多层互连结构的方法
公开(公告)号：US20090014887A1
公开(公告)日：2009-01-15
申请号：US12160149
申请日：2007-01-05
申请人： Hiroto Ohtake , Munehiro Tada , Makoto Ueki , Yoshihiro Hayashi
发明人： Hiroto Ohtake , Munehiro Tada , Makoto Ueki , Yoshihiro Hayashi
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L23/53295 , H01L21/76802 , H01L21/76808 , H01L21/76813 , H01L21/76826 , H01L21/76831 , H01L21/76835 , H01L23/5222 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In an insulating film structure having a barrier insulating film, a via interlayer insulating film, a wiring interlayer insulating film, and a hard mask film stacked in this order on an underlayer wiring, a via hole pattern is formed in the insulating film structure, then a groove pattern is formed in the hard mask film, and a grove is formed in the insulating film structure using this as a mask. According to the prior art, the via side wall is oxidized equally severely in the both processes. The trench side wall is oxidized severely in the via first process according to the prior art, whereas, according to the present invention, the oxidation thereof is suppressed to such an extent that an almost non-oxidized state can be created.
摘要翻译：在具有阻挡绝缘膜，通孔层间绝缘膜，布线层间绝缘膜和硬掩模膜的绝缘膜结构中，依次层叠在下层布线上，在绝缘膜结构中形成通孔图案，然后，在硬掩模膜中形成凹槽图案，并且使用其作为掩模在绝缘膜结构中形成凹槽。根据现有技术，通孔侧壁在两个过程中同样严重氧化。在根据现有技术的通孔第一工艺中，沟槽侧壁被严重氧化，而根据本发明，其氧化被抑制到几乎可以产生几乎非氧化状态的程度。

75. 发明授权

US07379379B2 Storage device employing a flash memory 失效
公开(公告)号：US07379379B2
公开(公告)日：2008-05-27
申请号：US11599308
申请日：2006-11-15
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C8/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

76. 发明申请

US20080054470A1 Semiconductor Device and Method of Fabricating the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080054470A1
公开(公告)日：2008-03-06
申请号：US11571251
申请日：2005-06-24
申请人： Mari Amano , Munehiro Tada , Yoshihiro Hayashi
发明人： Mari Amano , Munehiro Tada , Yoshihiro Hayashi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76835 , H01L21/76847 , H01L21/76864 , H01L21/76873
摘要： The present invention provides a semiconductor device which is capable of enhancing adhesion at an interface between a wire-protection film and copper, suppressing dispersion of copper at the interface to avoid electromigration and stress-inducing voids, and having a highly reliable wire. An interlayer insulating film, and a first etching-stopper film are formed on a semiconductor substrate on which a semiconductor device is fabricated. A first alloy-wire covered with a first barrier metal film is formed on the first etching-stopper film by a damascene process. The first alloy-wire is covered at an upper surface thereof with a first wire-protection film. The first wire-protection film covering an upper surface of the first alloy-wire contains at least one metal among metals contained in the first alloy-wire.
摘要翻译：本发明提供一种半导体装置，其能够提高线保护膜与铜之间的界面处的粘附性，抑制铜在界面处的分散，避免电迁移和应力诱导空隙，并具有高可靠性的导线。在其上制造半导体器件的半导体衬底上形成层间绝缘膜和第一蚀刻阻挡膜。通过镶嵌工艺在第一蚀刻阻挡膜上形成被第一阻挡金属膜覆盖的第一合金线。第一合金线在其上表面被第一线保护膜覆盖。覆盖第一合金线的上表面的第一线保护膜包含第一合金线中包含的金属中的至少一种金属。

77. 发明授权

US07327624B2 Storage device employing a flash memory 失效
标题翻译：采用闪存的存储设备
公开(公告)号：US07327624B2
公开(公告)日：2008-02-05
申请号：US11599325
申请日：2006-11-15
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C7/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
摘要翻译：采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器，存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控制器。由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。

78. 发明申请

US20070058475A1 Storage device employing a flash memory 失效
公开(公告)号：US20070058475A1
公开(公告)日：2007-03-15
申请号：US11599325
申请日：2006-11-15
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C8/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

79. 发明授权

US07123519B2 Storage device employing a flash memory 有权
公开(公告)号：US07123519B2
公开(公告)日：2006-10-17
申请号：US11085555
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C11/34
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

80. 发明授权

US07082510B2 Storage device employing a flash memory 失效
公开(公告)号：US07082510B2
公开(公告)日：2006-07-25
申请号：US11085544
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G06F12/02
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

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