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71. 发明申请

US20070068795A1 Hollow body plasma uniformity adjustment device and method 审中-公开
标题翻译：空心体等离子体均匀性调整装置及方法
公开(公告)号：US20070068795A1
公开(公告)日：2007-03-29
申请号：US11235593
申请日：2005-09-26
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/358
摘要： The uniformity of a plasma distribution having a tendency to peak toward the axis of a processing chamber is improved by positioning a hollow body on the chamber axis with an open end facing the processing space. The hollow body controls the distribution of the plasma away from the center and allows plasma at the center. The geometry of the hollow body can be optimized to render the plasma uniform for given conditions. In combined deposition and etch processes, such as simultaneous and sequential etch and iPVD processes, the hollow body provides for a uniform plasma for etching while allowing deposition parameters to be optimized for deposition.
摘要翻译：通过将空心体定位在腔室轴线上，面向处理空间的开口端，提高了具有趋向于处理室轴线倾向的等离子体分布的均匀性。中空体控制等离子体离开中心的分布，并允许等离子体在中心。可以优化空心体的几何形状以使给定条件下的等离子体均匀。在组合沉积和蚀刻工艺中，例如同步和顺序蚀刻和iPVD工艺，中空体为蚀刻提供均匀的等离子体，同时允许为沉积而优化沉积参数。

72. 发明申请

US20060231030A1 MODULATED GAP SEGMENTED ANTENNA FOR INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM 有权
标题翻译：用于感应耦合等离子体处理系统的调制差分天线
公开(公告)号：US20060231030A1
公开(公告)日：2006-10-19
申请号：US11278324
申请日：2006-03-31
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： C23C16/00
CPC分类号： H01J37/321
摘要： An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching The source has a segmented configuration with high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna for the source is a planer coil having at least two windings with the gap between the windings variable or modulated to control the antenna inductance around the antenna. The antenna has a plurality of, for example three, high inductance segments as a result of the conductor windings being closely spaced alternating with low inductance segments as a result of the conductor windings being widely spaced. The antenna and a shield are part of a plasma source. The shield has a plurality of high transparency segments aligning with the high inductance segments of the antenna. The shield may also have one or more additional high transparency segments along the low inductance portions of the antenna enhance formation of a plasma ring in the chamber.
摘要翻译：电感耦合等离子体源设置有用于在用于半导体晶片涂覆或蚀刻的真空室中产生高密度等离子体的外围电离源。源具有具有高和低辐射段的分段构造，并且产生大致环形阵列在室周围的等离子体中的能量浓度。能量从分段的低电感天线通过介电窗口或窗阵列并通过分段的屏蔽或挡板耦合。用于源的天线是具有至少两个绕组的平面线圈，绕组之间的间隙可变或被调制以控制天线周围的天线电感。由于导体绕组间隔很宽，天线具有多个例如三个高电感段，这是由于导体绕组与低电感段紧密隔开的结果。天线和屏蔽是等离子体源的一部分。屏蔽具有与天线的高电感段对准的多个高透明度段。屏蔽还可以具有沿着天线的低电感部分的一个或多个附加的高透明度段增强室中的等离子体环的形成。

73. 发明申请

US20060219168A1 Solid precursor vaporization system for use in chemical vapor deposition 失效
标题翻译：用于化学气相沉积的固体前体蒸发系统
公开(公告)号：US20060219168A1
公开(公告)日：2006-10-05
申请号：US11096077
申请日：2005-03-31
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： A solid precursor vaporization system configured for use in a deposition system, such as thermal chemical vapor deposition (TCVD), is described. The solid precursor vaporization system comprises a plurality of concentric solid precursor cylinders supported on a gas distribution plate and configured to provide a substantially constant surface area as solid precursor is consumed.
摘要翻译：描述了配置用于诸如热化学气相沉积（TCVD）的沉积系统中的固体前体蒸发系统。固体前体蒸发系统包括多个同心的固体前体气缸，其被支撑在气体分布板上并且被配置为当固体前体被消耗时提供基本上恒定的表面积。

74. 发明申请

US20060211223A1 Plasma enhanced atomic layer deposition system and method 有权
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US20060211223A1
公开(公告)日：2006-09-21
申请号：US11084003
申请日：2005-03-21
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： H01L21/20
CPC分类号： C23C16/45553 , C23C16/45538 , C23C16/515 , H01J37/32009 , H01J37/32532 , H01L21/28562 , H01L21/76843 , H01L21/76862
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, wherein the process chamber includes a substrate zone proximate the substrate and a peripheral zone proximate to a peripheral edge of the substrate. Also included is introducing a first process material within the process chamber, introducing a second process material within the process chamber and coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and the second process materials at a surface of the substrate. Electromagnetic power is coupled to a process electrode to generate a substrate zone plasma in the substrate zone that ionizes contaminants substantially in a region of the substrate, and electromagnetic power to a peripheral electrode to generate a peripheral zone plasma in the peripheral zone having a characteristic different from the substrate zone plasma such that ionized contaminants are transported from the substrate zone to the peripheral zone in the process chamber.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底设置在配置为便于PEALD工艺的处理室中，其中处理室包括靠近衬底的衬底区域和周边区域靠近衬底的周缘。还包括在处理室内引入第一处理材料，在处理室内引入第二处理材料，并且在引入第二工艺材料期间将电磁功率耦合到处理室以便产生促进第二工艺材料之间还原反应的等离子体第一工艺材料和第二工艺材料。电磁功率耦合到处理电极以在衬底区域中产生基本区域等离子体，其基本上在衬底的区域中电离污染物，并且向周边电极产生电磁功率，以在外围区域产生具有特征不同的周边区域等离子体从衬底区域等离子体使得电离污染物从衬底区域传送到处理室中的周边区域。

75. 发明申请

US20060210713A1 Plasma enhanced atomic layer deposition system and method 失效
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US20060210713A1
公开(公告)日：2006-09-21
申请号：US11084005
申请日：2005-03-21
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/45538 , C23C16/5096 , H01J2237/022
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Electromagnetic power is coupled to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate, electromagnetic power is coupled to a gas injection electrode to generate a plasma that ionizes contaminants such that the ionized contaminants are attracted to a plurality of orifices in the gas injection electrode. The process chamber is vacuum pumped through the plurality of orifices to expel the ionized contaminants from the process chamber.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底布置在处理室中，该处理室被配置为便于PEALD工艺，在处理室内引入第一工艺材料并引入第二工艺材料在处理室内。在引入第二工艺材料期间，电磁功率耦合到处理室，以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体，电磁功率耦合到气体注入电极产生电离污染物的等离子体，使得电离污染物被吸引到气体注入电极中的多个孔口。处理室被真空泵送通过多个孔口以从处理室排出离子化的污染物。

76. 发明授权

US07075771B2 Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system 失效
标题翻译：用于在等离子体处理系统中补偿衬底处的等离子体护套不均匀性的装置和方法
公开(公告)号：US07075771B2
公开(公告)日：2006-07-11
申请号：US10442815
申请日：2003-05-21
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： H02H1/00
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/6833
摘要： Apparatus and methods to compensating for radial non-uniformities in the plasma sheath at a substrate held by an electrostatic chuck in a plasma processing system. The substrate is held by a substrate-supporting surface of the electrostatic chuck. The substrate-supporting surface is modified by providing a pattern of features characteristic of a compensating structure that corrects the radial non-uniformities in the plasma sheath and then covering the features conformally with a planarization coating of a dielectric material. The dielectric material fills and covers the pattern of features to provide multiple parallel capacitances defining the compensating structure. The pattern of features characterizing the compensating structure may be determined from a radial non-uniformity in a plasma-related parameter at the substrate-supporting surface.
摘要翻译：在等离子体处理系统中由静电卡盘保持的基板处的等离子体护套中的径向不均匀性的补偿装置和方法。基板由静电卡盘的基板支撑表面保持。通过提供校正等离子体护套中的径向非均匀性然后用电介质材料的平坦化涂层来覆盖特征的补偿结构特征的特征图案来修改衬底支撑表面。电介质材料填充并覆盖特征图案以提供限定补偿结构的多个并联电容。表征补偿结构的特征的图案可以从衬底支撑表面处的等离子体相关参数的径向不均匀性来确定。

77. 发明申请

US20050266173A1 Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process 审中-公开
标题翻译：用于保形离子刺激纳米尺度沉积工艺的分布式等离子体处理系统的方法和装置
公开(公告)号：US20050266173A1
公开(公告)日：2005-12-01
申请号：US10854607
申请日：2004-05-26
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： C23C14/04 , C23C16/00 , H01L21/4763
CPC分类号： C23C14/046
摘要： A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.
摘要翻译：描述了沉积系统及其操作方法，用于使用高密度等离子体沉积具有高纵横比特征的共形金属或其它类似的响应性涂层膜。沉积系统包括等离子体源和用于形成等离子体并将金属蒸气引入沉积系统的分布金属源。沉积系统被配置为形成具有等离子体密度并产生具有金属密度的金属蒸气的等离子体，其中金属密度与靠近基底的等离子体密度之比小于或等于1。该比例应至少存在于距衬底表面约一定距离内，该衬底的表面直径约为衬底直径的百分之二十。在所述衬底的表面上基本上跨越正或负百分之二十五的均匀的比例是理想的。该比率对于超过10-12cm -3的等离子体密度特别有效，并且为了在具有最小膜厚度小于特征宽度的一半的纳米尺度特征的基底上沉积膜，例如，占特征宽度的10％。

78. 发明申请

US20050160985A1 Compact, distributed inductive element for large scale inductively-coupled plasma sources 失效
标题翻译：紧凑型分布式电感元件，用于大规模电感耦合等离子体源
公开(公告)号：US20050160985A1
公开(公告)日：2005-07-28
申请号：US10766505
申请日：2004-01-28
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/321
摘要： An inductively coupled plasma source is provided with a compact inductive element that is configured to produce a spatially distributed plasma particularly suitable for processing large scale wafers. The element in its preferred embodiment is formed of a sheet material for compactness and ease in configuring. The element is located outside of a dielectric wall or window of a processing chamber, generally congruent to the dielectric wall or window, formed of one or more layers or loops. The conductor provides a conductive path around each loop that has a serpentine or oscillating configuration that renders the path around each loop greater than the circumference of the element. The path is so shaped by cutouts along the side edges of the element. The conductor is formed of alternating sections of large and small aspect ratio, defined as the width across the path to the thickness of the sheet. The sections are also defined by cutouts in the sheet. Narrower sections concentrate currents, have higher inductances, and couple greater amounts of energy into the chamber, thereby producing rings of discrete plasma concentrations. One or more rings can be produced by configuring one or more loops of the inductive element so the higher inductance, lower aspect ratio sections lie at appropriate radii from the axis of the chamber.
摘要翻译：电感耦合等离子体源设置有紧凑的感应元件，其被配置为产生特别适合于处理大规模晶片的空间分布的等离子体。其优选实施例中的元件由用于紧凑且容易配置的片材形成。该元件位于由一个或多个层或环形成的通常与电介质壁或窗口一致的处理室的电介质壁或窗口的外部。导体提供围绕每个环的导电路径，其具有蛇形或摆动构型，其使围绕每个环的路径大于元件的圆周。该路径通过沿元件的侧边缘的切口成形。导体由具有大和小纵横比的交替部分形成，定义为穿过板的厚度的路径宽度。这些部分也由工作表中的切口定义。较窄的部分集中电流，具有更高的电感，并将更大量的能量耦合到腔室中，从而产生离散血浆浓度的环。可以通过配置电感元件的一个或多个环来产生一个或多个环，使得较高的电感，较低的纵横比部分位于从腔的轴线的适当半径处。

79. 发明申请

US20050103445A1 Plasma processing system with locally-efficient inductive plasma coupling 有权
标题翻译：具有局部高效感应等离子体耦合的等离子体处理系统
公开(公告)号：US20050103445A1
公开(公告)日：2005-05-19
申请号：US10717268
申请日：2003-11-19
申请人： Jozef Brcka , Rodney Robison
发明人： Jozef Brcka , Rodney Robison
IPC分类号： H01J37/32 , H01L21/306
CPC分类号： H01J37/321
摘要： An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, while alternating distributed conductor segments, formed of large cross-section conductor portions or diverging small conductor sections, permit magnetic fields to pass through or between the conductors and deliver only weak fields, which are aligned with opaque shield sections and couple insignificant energy to the plasma. The source provides spatial control of plasma energy distribution, which aids in control of the uniformity of plasma processing across the surface of the semiconductor being processed.
摘要翻译：电感耦合等离子体源设置有用于在用于半导体晶片涂布或蚀刻的真空室中产生高密度等离子体的外围电离源。源包括具有高和低辐射段的分段构造，并且在室周围的等离子体中产生大致环形阵列的能量浓度。能量从分段的低电感天线通过介电窗口或窗阵列并通过分段的屏蔽或挡板耦合。天线具有集中的导体段，电流在一个或多个小的横截面导体中通过该导体段产生高磁场，其通过高透明度屏蔽段耦合到腔室中，而交替分布的导体段由大的横截面导体部分或发散小导体部分，允许磁场通过导体之间或导体之间，并仅传递弱场，其与不透明屏蔽部分对准并且将不重要的能量耦合到等离子体。该源提供了等离子体能量分布的空间控制，其有助于控制正在处理的半导体的表面上的等离子体处理的均匀性。

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