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    • 73. 发明授权
    • Thin film transistor assembly, particularly suitable for liquid crystal display device, and process for fabricating the same
    • 薄膜晶体管组件,特别适用于液晶显示装置及其制造方法
    • US06512243B1
    • 2003-01-28
    • US09686814
    • 2000-10-12
    • Joo-Young KimWoong-Kwon KimYoung-Jin Oh
    • Joo-Young KimWoong-Kwon KimYoung-Jin Oh
    • H01L29104
    • H01L29/66765G02F1/1345G02F1/13458
    • A method of fabricating a thin film transistor (TFT) assembly having a plurality of array lines, a plurality of pads, a plurality of link lines connecting the pads to the array lines, an insulating layer, and an electrode pattern formed on a substrate, and further having short-preventing structures for preventing electrical shorts between the pads and the link lines. The method includes the steps of forming the plurality of pads on the substrata, depositing the insulating layer on the substrate including over the pads, etching the insulating layer, to form contact holes, and etching the insulating layer between the adjacent pads to expose a surface of the substrate to prevent a short between the adjacent pads from occurring, and forming the electrode pattern on the insulating layer by depositing and patterning an electrode layer such that the electrode pattern contacts the pads through the contact holes formed in the insulating layer. The steps of etching the insulating layer between the adjacent pads is performed concurrently with the etching step for forming the contact holes. In addition, the areas between adjacent pads are further etched concurrently with the step of etching the electrode layer.
    • 一种制造具有多个阵列线的薄膜晶体管(TFT)组件的方法,多个焊盘,将焊盘连接到阵列线的多个连接线,绝缘层和形成在基板上的电极图案, 并且还具有用于防止焊盘和连接线之间的电短路的防短路结构。 该方法包括以下步骤:在基底上形成多个焊盘,在包括焊盘的衬底上沉积绝缘层,蚀刻绝缘层,形成接触孔,并蚀刻相邻焊盘之间的绝缘层以暴露表面 以防止发生相邻焊盘之间的短路;以及通过沉积和构图电极层,使电极图案通过形成在绝缘层中的接触孔接触焊盘而在绝缘层上形成电极图案。 蚀刻相邻焊盘之间的绝缘层的步骤与用于形成接触孔的蚀刻步骤同时进行。 此外,在蚀刻电极层的步骤的同时进一步蚀刻相邻焊盘之间的区域。