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71. 发明授权

US5508550A Semiconductor device including a lateral-type transistor 失效
标题翻译：包括横向型晶体管的半导体器件
公开(公告)号：US5508550A
公开(公告)日：1996-04-16
申请号：US345337
申请日：1994-11-21
申请人： Masakazu Morishita , Shigetoshi Sugawa , Toru Koizumi
发明人： Masakazu Morishita , Shigetoshi Sugawa , Toru Koizumi
IPC分类号： H01L21/331 , H01L21/8249 , H01L27/06 , H01L27/07 , H01L29/10 , H01L29/73 , H01L29/739 , H01L29/78 , H01L29/786 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/78696 , H01L27/0623 , H01L27/0722 , H01L29/1087 , H01L29/7317 , H01L29/739 , H01L29/7838 , H01L29/78654
摘要： A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.
摘要翻译：半导体器件具有由具有源极和漏极区域的半导体制成的晶体管，沟道区域，栅极绝缘膜和栅极电极。栅电极连接到沟道区的一部分。沟道区具有与源极和漏极区相同的导电类型，并且其杂质浓度低于源极和漏极区的杂质浓度。

72. 发明授权

US5486704A Semiconductor device and electronic device by use of the semiconductor 失效
标题翻译：半导体器件和使用半导体的电子器件
公开(公告)号：US5486704A
公开(公告)日：1996-01-23
申请号：US118751
申请日：1993-09-10
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L21/331 , H01L29/08 , H01L29/73 , H01L29/72
CPC分类号： H01L29/66234 , H01L29/0895 , H01L29/7311
摘要： A semiconductor devive comprises;a collector region of first conductivity type;a base region of second conductivity type;an emitter region of the first conductivity type;a thin film provided on the emitter region and capable of flowing therein a tunnel current; anda polycrystalline layer laminated on the thin film.An energy .DELTA..phi..sub.B of potential barrier formed at a grain boundary is not less than a heat energy kT at a temperature therein.
摘要翻译：半导体设备包括：第一导电类型的集电极区域; 第二导电类型的基极区; 第一导电类型的发射极区域; 设置在发射极区域上并能够在其中流动隧道电流的薄膜; 和层叠在薄膜上的多晶层。在晶界处形成的势垒的能量DELTA phi B不小于其中的温度下的热能kT。

73. 发明授权

US5245204A Semiconductor device for use in an improved image pickup apparatus 失效
标题翻译：用于改进的图像拾取装置的半导体装置
公开(公告)号：US5245204A
公开(公告)日：1993-09-14
申请号：US872506
申请日：1992-04-23
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L27/146 , H01L29/737 , H01L31/11
CPC分类号： H01L27/14681 , H01L29/7378 , H01L31/1105
摘要： A semiconductor device comprises a collector region of first conductivity type, a base region of second conductivity type, and an emitter region of first conductivity. The base region has first base area and second base area provided around the first base area. A band gap width of said second base area is greater than that of the first base area.
摘要翻译：半导体器件包括第一导电类型的集电极区域，第二导电类型的基极区域和第一导电类型的发射极区域。基部区域具有围绕第一基部区域设置的第一基底区域和第二基底区域。所述第二基区的带隙宽度大于第一基区的带隙宽度。

74. 发明授权

US07643077B2 Photoelectric conversion apparatus and photoelectric conversion system having the apparatus 失效
标题翻译：具有该装置的光电转换装置和光电转换系统
公开(公告)号：US07643077B2
公开(公告)日：2010-01-05
申请号：US11620997
申请日：2007-01-08
申请人： Tadao Endo , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
发明人： Tadao Endo , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
IPC分类号： H04N3/14
CPC分类号： H04N5/363 , H01L27/14609 , H04N5/32 , H04N5/335 , H04N5/365 , H04N5/3742 , H04N5/378
摘要： In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the form of serial signals.
摘要翻译：为了提供一种光电转换装置，其是读取速度高，S / N高，色调级高，成本低的装置，具有包含多个光电转换元件的光电转换电路部，切换为了输出并行信号而配置在同一基板上的元件，矩阵信号线和栅极驱动线，用于向栅极驱动线施加驱动信号的驱动电路部，以及用于将通过矩阵信号线连接到串行信号以输出它们，其中读取电路部分包括与每个矩阵信号线连接的至少一个模拟运算放大器，用于传送来自各个矩阵信号线的输出信号的转换开关，通过每个放大器输出的读数电容器和读取开关，用于连续读取readi中的信号串联信号形式的电容器。

75. 发明授权

US07535506B2 Solid-state image pickup device and radiation image pickup device suitable for use in a flat panel detector 失效
标题翻译：适用于平板检测器的固态摄像装置和放射摄像装置
公开(公告)号：US07535506B2
公开(公告)日：2009-05-19
申请号：US10537907
申请日：2004-02-10
申请人： Keiichi Nomura , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii
发明人： Keiichi Nomura , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii
IPC分类号： H04N3/14 , H01L27/00
CPC分类号： H04N5/32 , H01L27/14603 , H01L27/14658
摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.
摘要翻译：根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极层之间设置在开关元件和辐射转换层之间。

76. 发明授权

US07465933B2 Radiographic imaging substrate, radiographic imaging apparatus, and radiographic imaging system 有权
标题翻译：射线照相成像基片，放射成像装置和放射成像系统
公开(公告)号：US07465933B2
公开(公告)日：2008-12-16
申请号：US11957843
申请日：2007-12-17
申请人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
发明人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
IPC分类号： G01T1/20 , H01L27/146
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating, With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electricity charged in a manufacturing process.
摘要翻译：一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件，用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到相同类型的偏置线，信号线和栅极线的至少多条线的光电转换层，其中连接布线的至少一部分布置在绝缘基板和绝缘体的边缘。通过这种布置，可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，即使在基板是电的情况下，也不会导致静电导致的装置性能和装置破坏的劣化在制造过程中充电。

77. 发明申请

US20070145285A1 RADIOGRAPHIC IMAGING SUBSTRATE, RADIOGRAPHIC IMAGING APPARATUS, AND RADIOGRAPHIC IMAGING SYSTEM 失效
标题翻译：放射成像基板，放射成像装置和放射成像系统
公开(公告)号：US20070145285A1
公开(公告)日：2007-06-28
申请号：US11683184
申请日：2007-03-07
申请人： TAKAMASA ISHII , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
发明人： TAKAMASA ISHII , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
IPC分类号： G01T1/20
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.
摘要翻译：一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件，用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到相同类型的偏置线，信号线和栅极线的至少多条线的光电转换层，其中连接布线的至少一部分布置在绝缘基板和绝缘基板的边缘。利用这种布置，即使在制造过程中基板被充电，也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，其不会因静电而导致的装置性能和装置破坏的劣化。

78. 发明申请

US20060249763A1 Radiation image pickup device 失效
公开(公告)号：US20060249763A1
公开(公告)日：2006-11-09
申请号：US10538013
申请日：2004-02-10
申请人： Chiori Mochizuki , Masakazu Morishita , Minoru Watanabe , Takamasa Ishii , Keiichi Nomura
发明人： Chiori Mochizuki , Masakazu Morishita , Minoru Watanabe , Takamasa Ishii , Keiichi Nomura
IPC分类号： H01L31/113
CPC分类号： H01L27/14658 , H04N5/32
摘要： In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

79. 发明授权

US07126158B2 Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system 失效
公开(公告)号：US07126158B2
公开(公告)日：2006-10-24
申请号：US11294519
申请日：2005-12-06
申请人： Toshiko Morii , Masakazu Morishita , Minoru Watanabe
发明人： Toshiko Morii , Masakazu Morishita , Minoru Watanabe
IPC分类号： H01L29/04
CPC分类号： H01L27/14658
摘要： An image pickup apparatus or a radiation image pickup apparatus according to the present invention includes: a plurality of pixels which are two-dimensionally arranged on a substrate, each of the plurality of pixels including a set of a semiconductor conversion element that converts an incident electromagnetic wave into an electrical signal and a switching element connected with the semiconductor conversion element; a drive wiring which is commonly connected with the plurality of switching elements arranged in a direction; and a signal wiring which is commonly connected with the plurality of switching elements arranged in a direction different from the direction, the switching element including a first semiconductor layer, the semiconductor conversion element being formed after the switching elements are formed and including the second semiconductor layer formed after the first semiconductor layer is formed, in which the semiconductor conversion element has an electrode formed outside a region in which two of the drive wiring, an electrode of the switching element, and the signal wiring overlap each other, exclusive of at least part of a region above the drive wiring and at least part of a region above the electrode of the switching element.

80. 发明授权

US07126127B2 Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system 有权
标题翻译：摄像装置及其制造方法，放射线摄像装置和放射线摄像系统
公开(公告)号：US07126127B2
公开(公告)日：2006-10-24
申请号：US10954194
申请日：2004-10-01
申请人： Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Keiichi Nomura , Takamasa Ishii
发明人： Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Keiichi Nomura , Takamasa Ishii
IPC分类号： G01T1/24
CPC分类号： H01L27/14643 , H01L27/14676
摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
摘要翻译：在图像拾取装置中，将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态底物。图像拾取装置包括栅极配线，多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线，多个像素的薄膜晶体管的源电极或漏电极布置在其上在与该方向不同的方向上共同连接在基板上。保护层布置在薄膜晶体管，栅极布线和信号布线上。保护层至少在同一时间形成。然后，在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。

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