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71. 发明申请

US20080117666A1 MEMORY WITH INCREASED WRITE MARGIN BITCELLS 有权
标题翻译：存储器增加写入字节位数
公开(公告)号：US20080117666A1
公开(公告)日：2008-05-22
申请号：US11561255
申请日：2006-11-17
申请人： Andrew C. Russell , Prashant U. Kenkare , Perry H. Pelley
发明人： Andrew C. Russell , Prashant U. Kenkare , Perry H. Pelley
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , G11C8/16
摘要： A memory comprising a first bit line, a second bit line, a word line, a first pair of cross-coupled inverters having a first input/output node and a second input/output node, a first power supply node and a second power supply node, wherein the first power supply node is coupled to a first power supply terminal, is provided. The memory further comprises a first gating transistor coupled between a second power supply terminal and the second power supply node, the first gating transistor receiving a first write enable signal that gates the gating transistor to a non-conductive condition during a write of the first pair of cross-coupled inverters. The memory further comprises a first pass transistor coupled to the first word line, the first input/output node, and the first bit line and a second pass transistor coupled to the first word line, the second input/output node, and the second bit line.
摘要翻译：一种存储器，包括第一位线，第二位线，字线，具有第一输入/输出节点和第二输入/输出节点的第一对交叉耦合的反相器，第一电源节点和第二电源节点，其中所述第一电源节点耦合到第一电源端子。存储器还包括耦合在第二电源端子和第二电源节点之间的第一门控晶体管，第一门控晶体管在第一对写入期间接收将门控晶体管栅极到非导通状态的第一写使能信号的交叉耦合逆变器。存储器还包括耦合到第一字线，第一输入/输出节点和第一位线的第一传输晶体管和耦合到第一字线的第二传输晶体管，第二输入/输出节点和第二位线。

72. 发明申请

US20080091990A1 CONTROLLED RELIABILITY IN AN INTEGRATED CIRCUIT 有权
标题翻译：集成电路中控制的可靠性
公开(公告)号：US20080091990A1
公开(公告)日：2008-04-17
申请号：US11536342
申请日：2006-09-28
申请人： Klas M. Bruce , Andrew C. Russell , Shayan Zhang , Bradford L. Hunter
发明人： Klas M. Bruce , Andrew C. Russell , Shayan Zhang , Bradford L. Hunter
IPC分类号： G11C29/00
CPC分类号： G11C29/42 , G11C5/147 , G11C29/02 , G11C29/021 , G11C29/028
摘要： Methods and systems for configuring characteristics associated with at least one portion of a memory array comprising addressable units are provided. In one aspect, a method for controlling a power supply voltage for a memory array comprises detecting whether an error occurred in performing a read operation on an addressable unit of the memory array using a first power supply voltage coupled to the memory array. The method further comprises incrementing an error counter for tracking an error count associated with the memory array and switching the memory array to a second power supply voltage if the error count is equal to or exceeds an error threshold for the memory array. The method further comprises, based on at least one condition, switching the memory array to the first power supply voltage and resetting the error counter to an initial value.
摘要翻译：提供了用于配置与包括可寻址单元的存储器阵列的至少一部分相关联的特性的方法和系统。一方面，一种用于控制存储器阵列的电源电压的方法包括使用耦合到存储器阵列的第一电源电压来检测在对存储器阵列的可寻址单元执行读取操作时是否发生错误。该方法还包括增加误差计数器以跟踪与存储器阵列相关联的误差计数，并且如果误差计数等于或超过存储器阵列的误差阈值，则将存储器阵列切换到第二电源电压。该方法还包括基于至少一个条件，将存储器阵列切换到第一电源电压并将错误计数器重置为初始值。

73. 发明申请

US20080082873A1 MINIMUM MEMORY OPERATING VOLTAGE TECHNIQUE 有权
标题翻译：最小存储器工作电压技术
公开(公告)号：US20080082873A1
公开(公告)日：2008-04-03
申请号：US11468458
申请日：2006-08-30
申请人： Andrew C. Russell , David R. Bearden , Bradford L. Hunter , Shayan Zhang
发明人： Andrew C. Russell , David R. Bearden , Bradford L. Hunter , Shayan Zhang
IPC分类号： G11C29/00
CPC分类号： G11C5/147 , G11C29/02 , G11C29/021 , G11C29/028 , G11C29/50 , G11C29/50016 , G11C2029/5004
摘要： A method includes an integrated circuit with a memory. The memory operates with an operating voltage. A value of a minimum operating voltage of the memory is determined. The value of the minimum operating voltage is stored in a non-volatile memory location that maybe a non-volatile register. This minimum operating voltage information can then be used in determining when an alternative power supply voltage may be switched to the memory or ensuring that the minimum voltage is otherwise met. The minimum voltage can be used only internal to the integrated circuit or also provided externally to a user.
摘要翻译：一种方法包括具有存储器的集成电路。存储器工作在工作电压。确定存储器的最小工作电压的值。最小工作电压的值存储在可能是非易失性寄存器的非易失性存储器位置。然后可以使用该最小工作电压信息来确定什么时候可以将替代电源电压切换到存储器或确保以其他方式满足最小电压。最小电压只能用于集成电路内部，也可以在用户外部使用。

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