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71. 发明专利

JPS58164287A SUBSTRATE FOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPS58164287A
公开(公告)日：1983-09-29
申请号：JP4759082
申请日：1982-03-24
申请人： HITACHI LTD
发明人： CHIBA AKIO , SHIMIZU SEIKI , KUNIYA KEIICHI , OONUKI HITOSHI
IPC分类号： H05K1/03 , H01L21/52 , H01L23/14 , H05K1/02

72. 发明专利

JPS56108237A INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS56108237A
公开(公告)日：1981-08-27
申请号：JP1009880
申请日：1980-02-01
申请人： HITACHI LTD
发明人： KOJIMA YOSHIYUKI , FUNIYUU MASAO , ASAHI NAOTATSU , CHIBA AKIO , KUNIYA KEIICHI , OGAWA TAKUZOU , SOGA TASAO
IPC分类号： H01L21/52 , H01L23/373
摘要： PURPOSE:To improve the heat radiating property of an integrated circuit device by empolying a wiring film formed by embedding fiber in the matrix of a metal having larger electrical and thermal conductivities than the fiber and no metallurgical compatibility with the fiber, the fiber having smaller thermal expansion coefficient than the matrix. CONSTITUTION:As the fiber, carbon having small thermal expansion coefficient is used, and as the metal matrix, Cu, Ag or Al is singly used. The complex thereof never forms reactants which may deteriorate mechanical, electrical or thermal characteristics. For examle, Cu-plated carbon having a diameter of several mum is spirally wound and pressed in N2 at 800 deg.C. Then, the carbon fibers are embedded in the Cu matrix at approximately equal distances to form a uniform complex to be a wiring film. Through said wiring film, a semiconductor device and a heat sink are brazed. The heat radiating property of the IC device by said constitution is extremely excellent.

73. 发明专利

JPS5527608A ANISOTROPIC THIN MAGNETIC BAND WITH GOOD HIGHHFREQUENCY CHARACTERISTICS AND MANUFACTURING DEVICE 失效
公开(公告)号：JPS5527608A
公开(公告)日：1980-02-27
申请号：JP10007378
申请日：1978-08-18
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： NARUSHIGE SHINJI , CHIBA AKIO
IPC分类号： C21D6/00 , B22D11/06 , C21D8/12 , H01F1/153
摘要： PURPOSE:To provide magnetic anisotropy without requiring heat treatment in a magnetic field, by forming a plurality of grooves, of depth 5-30% of the thickness of a thin magnetic band, at equal intervals along a fixed direction on the surface of non-crystalline magnetic thin band. CONSTITUTION:Non-crystalline melted metal 8 is ejected from nozzle 7 onto cooling rotating body 6 rotating at high speed. Projected ridges 5, which form grooves of depth 5-30% of the thickness of rhe magnetic thin band, are provided at equal intervals in the direction perpendicular to the direction of rotation on the surface of the rotating body. The ejected melted metal is cooled by cooling rotating body 6 and solidified into anisotropic magnetic thin band 2. As regards the reason why the depth of the grooves is set at 5-30% of the thickness of the thin band, when it is less than 5%, anisotropy is insufficient, and when it is more than 30%, the volume-occupying rate becomes low and inter-layer insulation deteriorates.

74. 发明专利

JPS543293A FIXING MEANS OF MAGNET POLE PIECE FOR NUCLEAR MAGNETIC RESONANCE 失效
公开(公告)号：JPS543293A
公开(公告)日：1979-01-11
申请号：JP6792377
申请日：1977-06-10
申请人： HITACHI LTD
发明人： CHIBA AKIO , IMAHASHI HIROMICHI , TOMITA SADAMI , MUTAGUCHI GANDOU
IPC分类号： G01R33/383 , A61B5/055 , H01F7/02
摘要： PURPOSE:To fix with a high accuracy by casting a pair of pole pieces as an insertion arranged through a frame.

75. 发明专利

JP2002057002A CuO-BASED CERAMIC RESISTOR FOR POWER AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002057002A
公开(公告)日：2002-02-22
申请号：JP2000244035
申请日：2000-08-07
申请人： HITACHI LTD
发明人： SAITO YUKIO , CHIBA AKIO , SAWAI YUICHI , TAKAHASHI KEN , TANAKA SHIGERU
IPC分类号： C04B35/45 , C04B35/00 , C04B35/495 , H01C7/00 , H01C13/00 , H01C17/00
摘要： PROBLEM TO BE SOLVED: To improve the reliability and compactness of a CuO-based ceramic resistor for power. SOLUTION: This ceramic resistor is composed of a sintered product containing CuO and the oxide of at least one kind of element selected from among La, Sr, Ca, Y, Nd, Pr, Ba, and Tl.

76. 发明专利

JP2002050502A CERAMIC RESISTOR AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002050502A
公开(公告)日：2002-02-15
申请号：JP2000238880
申请日：2000-08-02
申请人： HITACHI LTD
发明人： SAITO YUKIO , CHIBA AKIO , SAWAI YUICHI , TAKAHASHI KEN , TANAKA SHIGERU
IPC分类号： C04B35/00 , C04B35/46 , C04B35/495 , H01C7/00
摘要： PROBLEM TO BE SOLVED: To provide a ceramic resistor which can improve reliability of a neutral grounding resistor for power transmission and substation equipment, and at the same time, can make the resistor compact. SOLUTION: This ceramic resistor is constituted of an NiO-Li2O-based mixed crystal semiconductor, formed by baking mixed powder of NiO and Li2O, Li2O3, or Li2C2O4 for one to three hours at a temperature of 800-1,500 deg.C under atmospheric air or an Fe2O3-Cr2O3-TiO2-based mixed crystal semiconductor, formed by baking mixed powder of Fe2O3, Cr2O3, and TiO2 for one to three hours at a temperature of 1,300-1,500 deg.C under atmospheric air.

77. 发明专利

JPH11292644A PRODUCTION OF WHISKER COMPOSITE CERAMIC POWDER AND PRODUCTION OF SINTERED COMPACT THEREOF 失效
公开(公告)号：JPH11292644A
公开(公告)日：1999-10-26
申请号：JP9558098
申请日：1998-04-08
申请人： HITACHI LTD
发明人： SAWAI YUICHI , CHIBA AKIO , KANAI TSUNEYUKI , YASUTOMI YOSHIYUKI
IPC分类号： C04B35/80
摘要： PROBLEM TO BE SOLVED: To obtain whisker composite ceramic powder which is a raw material for whisker composite ceramics having high strength and high toughness. SOLUTION: In this whisker composite ceramic powder which is a raw material for whisker composite ceramics, a whisker 2 formed by reaction of a carbonaceous substance not containing a catalyst such as a metal with ceramic powder 1 by heat-treating ceramic powder in which the carbonaceous substance is compounded in an inert gas atmosphere not containing nitrogen or nitrogen- containing atmosphere is contained.

78. 发明专利

JPH1129367A WHISKER COMPOSITE CERAMIC AND ITS PREPARATION 失效
公开(公告)号：JPH1129367A
公开(公告)日：1999-02-02
申请号：JP18365797
申请日：1997-07-09
申请人： HITACHI LTD
发明人： SAWAI YUICHI , MIYATA MOTOYUKI , CHIBA AKIO , KANAI TSUNEYUKI
IPC分类号： B32B5/16 , C04B35/80 , C04B35/81
摘要： PROBLEM TO BE SOLVED: To obtain improved fracture toughness by changing at least one of the distribution density, diameter and length of the whisker to the inward direction of the whisker composite ceramic. SOLUTION: The objective product is a whisker composite ceramic in which the whisker distribution density is changed inward so that it may become 5-50 vol.% in the surface area bearing the toughens and 0-30 vol.% in the middle part bearing the strength. During the process that the ceramic powder and powder as a raw material for dispersed whiskers are mixed, molded and a sintered, the raw whisker material are allowed to react thereby forming whiskers in the ceramic. In this case, the amount of the whiskers formed in the molded product increases, as the initial relative density becomes lower, wile the formation of whiskers are suppressed as the initial relative density becomes higher. Thus, the initial relative density is controlled to 20-60 wt.% to produce the composite ceramic having the objective performance. The dispersed whisker raw powder is selected form Si3 N4 , SiO2 , C polycarbosilane as a raw material for SiC or Si3 N4 .

79. 发明专利

JPH08292278A PLASMA COPING MATERIAL 失效
公开(公告)号：JPH08292278A
公开(公告)日：1996-11-05
申请号：JP9651195
申请日：1995-04-21
申请人： HITACHI LTD
发明人： NAKAGAWA MOROO , CHIBA AKIO , SUZUKI YASUTAKA
IPC分类号： G21B1/11 , G21B1/00 , G21B1/13 , G21B1/17
摘要： PURPOSE: To prevent a more critical crack from being generated by providing a groove machining on the surface of a material which is exposed to plasma for achieving irregularities. CONSTITUTION: The surface of a plasma coping material to be exposed to plasma when plasma is distorted is rapidly heated to a high temperature and the surface temperature rapidly decreases when the plasma becomes stable. A controlled groove is machined near a surface as a structure where no crack is generated even if the large thermal shock is received, thus achieving irregularities and relaxing thermal stress. At the same time, by selecting the shape and dimensions of the groove, an artificially controlled crack is allowed to grow and further propagation of the crack is prevented. In this case, the ratio between the groove depth and groove gap should be equal to or more than 0.6 and the groove depth should be equal to or less than 1/10 of the material thickness.

80. 发明专利

JPH0881261A HIGHLY HEAT-CONDUCTIVE CARBON FIBER/BORON CARBIDE COMPOSITE MATERIAL 失效
公开(公告)号：JPH0881261A
公开(公告)日：1996-03-26
申请号：JP21556294
申请日：1994-09-09
申请人： HITACHI LTD , JAPAN ATOMIC ENERGY RES INST
发明人： CHIBA AKIO , SUZUKI YASUTAKA , GOTO SUMITAKA , SAITO YUKIO , JINBO RYUTARO , OGIWARA TOKUO , NISHIDOU MASAHIRO
IPC分类号： G21B1/11 , C04B35/563 , G21B1/00 , G21B1/17
摘要： PURPOSE: To obtain a carbon fiber/boron carbide composite sintered compact excellent in thermal conductivity by suppressing the diffusion, solid solution and reaction of boron with the carbon fibers. CONSTITUTION: This highly heat-conductive carbon fiber/baron carbide composite material comprises a composite sintered compact containing 50-90vol.% carbon (graphite) fibers and 10-50vol.% boron carbide and further =150W/mk thermal conductivity in the direction having the maximum thermal conductivity. Furthermore, >=500 carbon fibers are formed into a carbon fiber bundle therein and the interstices among the carbon fibers forming the carbon fiber bundle are filled with graphite or amorphous carbon. The interplanar spacing of the 110} face of the carbon fibers in the carbon fiber bundle is 0.12305-0.12325nm. The fiber bundle has a reactional layer with boron in the outer peripheral layer thereof and the thickness of the reactional layer is >=3μm. The carbon fiber bundle is uni-, two- or three-dimensionally oriented. The metallic powder is of a metal capable of producing a carbide or a boride in sintering and the ceramics is a carbide or a boride.

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