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71. 发明专利

JPS63129087A METALLIZED ALUMINUM NITRIDE CERAMICS AND MANUFACTURE 失效
公开(公告)号：JPS63129087A
公开(公告)日：1988-06-01
申请号：JP27404686
申请日：1986-11-19
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , INOUE KOICHI , TAKAHASHI MASAAKI , YATSUNO KOMEI
IPC分类号： C04B41/90 , H01L23/12 , H05K1/03 , H05K3/38

72. 发明专利

JPS62287650A PACKAGE STRUCTURE INCORPORATING SILICON CARBIDE 失效
公开(公告)号：JPS62287650A
公开(公告)日：1987-12-14
申请号：JP13013786
申请日：1986-06-06
申请人： HITACHI LTD
发明人： INOUE KOICHI , KURIHARA YASUTOSHI , YATSUNO KOMEI , SAWAHATA MAMORU , TAKAHASHI MASAAKI
IPC分类号： H01L23/12 , H01L23/14 , H01L23/15
摘要： PURPOSE:To realize a highly reliable semiconductor package structure capable of withstanding high temperature by a method wherein a bonding region is provided with a metal-made buffer layer and it is so designed that the package has an L-shaped cross section. CONSTITUTION:An IC-supporting member 3 is built of an SiC member 301. Alumina is the material used for a wiring member 7. An aloy of aluminum and silicon is employed for a bonding agent 6, with a gap (e) retained for a bonding layer. The middle portion of the SiC member 301 is metallized with gold for the bonding of a silicon chip 1. Further, on the stepped portion, a wire bonding electrode 13 is built, metallized with gold connecting to an internal conductive path 11. A gold wire 14 establishes connection between a substrate side wire bonding electrode 13 and a chip-side electrode 15. Finally, by using a cap bonding member 8, a sealing member 9 is bonded to the wiring member 7. With the portions metallized with gold absorbing any stress created by the difference between thermal expansion factors at points of connection, a highly reliable package structure is realized.

73. 发明专利

JPS62287649A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62287649A
公开(公告)日：1987-12-14
申请号：JP13014186
申请日：1986-06-06
申请人： HITACHI LTD
发明人： TAKAHASHI MASAAKI , SAWAHATA MAMORU , KURIHARA YASUTOSHI , INOUE KOICHI , YATSUNO KOMEI
IPC分类号： H01L23/34 , H01L23/12 , H01L23/36
摘要： PURPOSE:To bond ceramic without causing any damage to the ceramic to a metal substrate to be a heat sink by a method wherein the bonding between the heat sink material and the ceramic is accomplished by means of pressure welding. CONSTITUTION:Ceramic 12 is covered by a metal frame 13. A soft metal buffer plate 11, made of Al or Cu foil or the like capable of deformation under thermal stress, is inserted between the ceramic 12 and a heat sink 10. The bonding of the ceramic 12 to the heat sink 10 is accomplished when ends 14 of the metal frame 13 are welded under pressure to the heat sink 10. In a structure of this design wherein pressure welding is effected, because there is no direct contact between the ceramic and the metal layer of a relatively large thermal expansion factor, the ceramic of a relatively small thermal expansion factor may easily be bonded to the heat sink material.

74. 发明专利

JPS6236090A METALLIZATION OF ALUMINUM NITRIDE 失效
公开(公告)号：JPS6236090A
公开(公告)日：1987-02-17
申请号：JP17485585
申请日：1985-08-08
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , INOUE KOICHI , TAKAHASHI MASAAKI , SAWAHATA MAMORU , YATSUNO KOMEI
IPC分类号： C04B41/88

75. 发明专利

JPS6149346B2 失效
公开(公告)号：JPS6149346B2
公开(公告)日：1986-10-29
申请号：JP25629585
申请日：1985-11-15
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , YATSUNO KOMEI
IPC分类号： C08L101/00 , C08K3/00 , C08K3/22 , C08K3/24 , C08K3/28 , C08K3/34 , H01L23/29 , H01L23/31

76. 发明专利

JPS6115901B2 JPS6115901B2 - 失效
公开(公告)号：JPS6115901B2
公开(公告)日：1986-04-26
申请号：JP4626380
申请日：1980-04-10
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , YATSUNO KOMEI
IPC分类号： C08K3/00 , C08L101/00 , H01L23/29 , H01L23/31
CPC分类号： H01L23/291 , H01L23/295 , H01L2224/16225 , H01L2924/0002 , H01L2924/00

77. 发明专利

JPS6165442A Semiconductor package structure 失效
标题翻译：半导体封装结构
公开(公告)号：JPS6165442A
公开(公告)日：1986-04-04
申请号：JP18638084
申请日：1984-09-07
申请人： Hitachi Ltd
发明人： INOUE KOICHI , KURIHARA YASUTOSHI , MINAGAWA TADASHI , YATSUNO KOMEI , SAWAHATA MAMORU , MOROZUMI KAZUNORI
IPC分类号： H05K3/34 , B23K35/26 , H01L21/60
CPC分类号： B23K35/262 , H01L2224/16 , H01L2924/01322 , H05K3/3436 , H05K3/3463
摘要： PURPOSE:To improve the lifetime of thermal fatigue resistance of the title element by adjusting the composition of fine and many micro solder groups to bond a semiconductor substrate to a dielectric substrate electrically and mechanically. CONSTITUTION:The semiconductor substrate 2 is bonded to the dielectric substrate 1 electrically and mechanically with the group 3 of many fine micro solders. At that time, the composition of the solder group 3 is: more than 65% and less than 80% in Sn weight ratio and the remaining is substantially made of Pb. Besides, the solder presents the structure that the eutectic crystal of relatively large gain size surrounds the beta initial crystal of large grain size. This manner reduces the amount of plastic deformation of the package structure and improves the performance of thermal lifetime.
摘要翻译：目的：通过调整精细和许多微焊料组成，通过电气和机械方式将半导体衬底与电介质衬底结合，从而提高标题元件的耐热疲劳寿命。构成：半导体衬底2与许多细微焊料的组3电气机械地接合到电介质衬底1。此时，焊料组3的组成为Sn重量比超过65％且小于80％，其余部分基本上由Pb制成。此外，焊料呈现出具有较大增益尺寸的共晶晶体围绕大晶粒尺寸的β初始晶体的结构。这样减少了包装结构的塑性变形量，并提高了热寿命的性能。

78. 发明专利

JPS6147659A Lsi multichip mounting structure 失效
标题翻译： LSI多芯片安装结构
公开(公告)号：JPS6147659A
公开(公告)日：1986-03-08
申请号：JP16935284
申请日：1984-08-15
申请人： Hitachi Ltd
发明人： SOGA TASAO , KURIHARA YASUTOSHI , YATSUNO KOMEI , MIYATA KENJI , OKAMURA MASAHIRO
IPC分类号： H01L23/34 , H01L23/057 , H01L23/498 , H01L23/52
CPC分类号： H01L23/057 , H01L23/49827 , H01L2224/16 , H01L2224/73253 , H01L2924/10253 , H01L2924/16195 , H01L2924/1627 , H01L2924/00
摘要： PURPOSE:To realize small size cubic mounting structure and high speed arithmetic operation by providing an output pin to the side where LSI chip is mounted in the periphery of multilayered plate. CONSTITUTION:An Si chip 2 is mounted on a composite substrate obtained by laminating SiC plate 11 on to an organic multilayered wiring plate 9 having a low dielectric coefficient. For example, an input/output pin 27 is soldered to the SiC plate 26 using Sn-18% Bi 45% Pb solder after providing a through hole 32 and a land 28 to SiC plate 2. The terminals of chip 2 within the housing are connected through the through hole conductor 41 and internal wiring 40 and are also connected to the external input/output pin 27. The input/output pin is connected to the modules of upper and lower stages. A small size and multistage multichip module can be configurated by extracting upward the pin using the space at the side wall of housing. Accordingly, a high capacity and high speed ultra-large scale computer can be realized with small size structure.
摘要翻译：目的：通过在多层板周边安装LSI芯片的一侧设置一个输出引脚，实现小尺寸立方安装结构和高速算术运算。构成：通过将SiC板11层合到具有低介电常数的有机多层布线板9上而获得的复合基板上安装Si芯片2。例如，在向SiC板2提供通孔32和焊盘28之后，使用Sn-18％Bi 45％Pb焊料将输入/输出引脚27焊接到SiC板26上。壳体内的芯片2的端子是通过通孔导体41和内部布线40连接，并且还连接到外部输入/输出引脚27.输入/输出引脚连接到上部和下部的模块。可以通过使用外壳侧壁的空间向上提取销来配置小尺寸和多级多芯片模块。因此，可以实现具有小尺寸结构的高容量和高速超大规模计算机。

79. 发明专利

JPS6129160A Thermal conductive cooling module device 失效
标题翻译：导热冷却模块装置
公开(公告)号：JPS6129160A
公开(公告)日：1986-02-10
申请号：JP14950284
申请日：1984-07-20
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , SAWAHATA MAMORU , YATSUNO KOMEI , MIYATA KENJI , OKAMURA MASAHIRO , KOBAYASHI FUMIYUKI , OGURO TAKAHIRO
IPC分类号： H01L23/34 , H01L23/42
CPC分类号： H01L23/42 , H01L2224/16225 , H01L2224/73253 , H01L2924/16152
摘要： PURPOSE:To efficiently cool by providing a housing made of a composite metal plate of laminated structure in which metal layers of different types are bonded directly in a thermal conductive passage for cooling, thereby preferably maintaining the thermal transmision performance of the passage. CONSTITUTION:Approx. 100 pieces of LSI chips 10 as heat generators formed with solid stage circuits on a silicon substrate are mounted on a multilayer circuit board 12 made of ceramic by ultrafine solder 11. A housing 16 having a projection 16d at the peripheral edge is secured by a soldering material 17 to the board 12, and bonded to the chips 10 through thermal conductive pad 20. The housing 16 is a composite metal plate directly integrated by cold rolling method from an iron-nickel plate on both main surfaces of a copper plate. A cooling plate 32 is engaged with the housing 16, and cooling liquid 42 removes the heat. The board 12 is supported through a connecting pin 14 to a circuit board 13.
摘要翻译：目的：通过提供一种由层叠结构的复合金属板制成的外壳，其中不同类型的金属层直接接合在用于冷却的导热通道中，从而优选地保持通道的热传导性能。规定：约作为在硅衬底上形成有固体级电路的热发生器的100片LSI芯片10安装在由超细焊料11制成的由陶瓷制成的多层电路板12上。在周边边缘具有突起16d的壳体16通过焊接材料17连接到板12上，并且通过导热垫20与芯片10接合。壳体16是通过冷轧方法从铜板的两个主表面上的铁 - 镍板直接集成的复合金属板。冷却板32与壳体16接合，冷却液42除去热量。板12通过连接销14支撑到电路板13。

80. 发明专利

JPS60239049A HEAT CONDUCTIVE COOLING MODULE DEVICE 失效
公开(公告)号：JPS60239049A
公开(公告)日：1985-11-27
申请号：JP9286884
申请日：1984-05-11
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , SOGA TASAO , YATSUNO KOUMEI , MIYATA KENJI , OKAMURA MASAHIRO , KOBAYASHI FUMIYUKI , OOGURO TAKAHIRO
IPC分类号： H01L23/40 , H01L23/36 , H01L23/433
摘要： PURPOSE:To enhance the cooling efficiency of chips by a method wherein a number of LSI chips 10 are fixed to one surface of the multilayer wiring substrate such as ceramic and the like, and when the above is surrounded by the closed space wherein He gas is filled, a bottomed cylindrical heat conducting connection member, having silicon carbide as a main ingredient, is attached to each chip, and the above is pressed by a spring. CONSTITUTION:A number of LSI chips 10 are adhered to one surface of a multilayer wiring substrate 12 consisting of ceramic using microscopic solder balls 11, and the connection pin 14 protruding from the other surface is inserted and fixed to the through hole 13a of the wiring board with which an auxiliary circuit is supported. Then, the chip 10 is surrounded by the casing consisting of a spacer 15 and a housing 16, He gas is filled in the casing, and a cooling plate 32 on which a cooling medium 42 is circulated is adhered to the side of the housing 16. According to this constitution, a bottomed cylindrical heat conducting connection member 20, containing silicon carbide as the main ingredient, beryllium and the like, is brought to come in contact with each chip 10, and the above is pressed using the protruded part 16a protruding from the housing 16 through the intermediary of a spring 21.

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