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    • 71. 发明授权
    • Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
    • 电荷泵系统由于电容之间的电荷共享而降低了低效率
    • US08294509B2
    • 2012-10-23
    • US12973641
    • 2010-12-20
    • Feng PanJonathan Huynh
    • Feng PanJonathan Huynh
    • G05F1/10
    • H02M3/07
    • Improvements in the efficiency of two charge pump designs are presented. As a charge pump switches between modes, capacitances are charged. Due to charge sharing between capacitances, inefficiencies are introduced. Techniques for reducing these inefficiencies are presented for two different charge pump designs are presented. For a clock voltage doubler type of pump, a four phase clock scheme is introduced to pre-charge the output nodes of the pump's legs. For a pump design where a set of capacitances are connected in series to supply the output during the charging phase, one or more pre-charging phases are introduced after the reset phase, but before the charging phase. In this pre-charge phase, the bottom plate of a capacitor is set to the high voltage level prior to being connected to the top plate of the preceding capacitor in the series.
    • 介绍了两种电荷泵设计效率的提高。 当电荷泵在模式之间切换时,电容被充电。 由于电容之间的电荷共享,导致低效率。 提出了降低这些低效率的技术,介绍了两种不同的电荷泵设计。 对于时钟倍压器类型的泵,引入四相时钟方案以对泵的输出节点预充电。 对于其中一组电容串联连接以在充电阶段期间提供输出的泵设计,在复位阶段之后但在充电阶段之前引入一个或多个预充电阶段。 在该预充电阶段,将电容器的底板在连接到串联的前一电容器的顶板之前设置为高电压电平。
    • 72. 发明授权
    • Security functional thin film and security product containing the functional thin film
    • 安全功能薄膜和安全产品,含有功能薄膜
    • US08257840B2
    • 2012-09-04
    • US12305966
    • 2008-03-24
    • Xiaowei LiXinyu LiCe LiJing YangFeng PanCaixia LiYu Cao
    • Xiaowei LiXinyu LiCe LiJing YangFeng PanCaixia LiYu Cao
    • B32B15/04
    • B32B37/24B32B37/203B32B2037/246B32B2307/208B32B2309/105B32B2425/00B32B2429/00G09F3/0292G11B5/00808H01F10/132H01F41/18Y10T428/24802Y10T428/265Y10T428/325
    • The present invention provides a security functional thin film and a security product containing such a thin film. The security functional thin film is of an amorphous structure, and possesses soft magnetic characteristics. Large Barkhausen effect can be detected along the in-plane preferred direction of magnetization; and the Large Barkhausen effect significantly attenuates, or no such signal can be detected, in a direction perpendicular to the in-plane preferred direction of magnetization. The thin film has a thickness of 20-300 nm, and the thin film also possesses element encoding characteristics that can be authenticated by experts. The security functional thin film of the present invention can be fabricated by magnetron sputtering web coating process. The security product provided by the present invention has a security information layer formed of the security functional thin film, and can be combined with other security characteristics for use in fabricating security materials such as security threads, security tapes, paper security strip-like inserts, or security labels, and others. Compared with conventional anti-counterfeiting technologies, the instant security functional thin film has more hidden security information, and facilitates enhancement of safety performance of security products.
    • 本发明提供一种安全功能薄膜和包含这种薄膜的安全产品。 安全功能薄膜为非晶结构,具有软磁特性。 沿着平面内优选的磁化方向可以检测到大的巴克豪森效应; 并且大巴克豪森效应在垂直于面内优选磁化方向的方向上显着衰减或不能检测到这样的信号。 该薄膜的厚度为20-300nm,薄膜还具有可由专家认证的元件编码特性。 本发明的安全功能薄膜可以通过磁控溅射网涂布法制造。 由本发明提供的安全产品具有由安全功能薄膜形成的安全信息层,并且可以与用于制造诸如安全螺纹,安全带,纸安全带状插入物等安全材料的其他安全特性组合, 或安全标签等。 与传统防伪技术相比,即时安全功能薄膜具有更多隐藏的安全信息,有利于提高安全产品的安全性能。
    • 73. 发明申请
    • Charge Pump Systems with Reduction in Inefficiencies Due to Charge Sharing Between Capacitances
    • 电荷泵系统由于电容之间的电荷共享而降低了低效率
    • US20120154023A1
    • 2012-06-21
    • US12973641
    • 2010-12-20
    • Feng PanJonathan Huynh
    • Feng PanJonathan Huynh
    • G05F3/08
    • H02M3/07
    • Improvements in the efficiency of two charge pump designs are presented. As a charge pump switches between modes, capacitances are charged. Due to charge sharing between capacitances, inefficiencies are introduced. Techniques for reducing these inefficiencies are presented for two different charge pump designs are presented. For a clock voltage doubler type of pump, a four phase clock scheme is introduced to pre-charge the output nodes of the pump's legs. For a pump design where a set of capacitances are connected in series to supply the output during the charging phase, one or more pre-charging phases are introduced after the reset phase, but before the charging phase. In this pre-charge phase, the bottom plate of a capacitor is set to the high voltage level prior to being connected to the top plate of the preceding capacitor in the series.
    • 介绍了两种电荷泵设计效率的提高。 当电荷泵在模式之间切换时,电容被充电。 由于电容之间的电荷共享,导致低效率。 提出了降低这些低效率的技术,介绍了两种不同的电荷泵设计。 对于时钟倍压器类型的泵,引入四相时钟方案以对泵的输出节点预充电。 对于其中一组电容串联连接以在充电阶段期间提供输出的泵设计,在复位阶段之后但在充电阶段之前引入一个或多个预充电阶段。 在该预充电阶段,将电容器的底板在连接到串联的前一电容器的顶板之前设置为高电压电平。
    • 74. 发明申请
    • High Voltage Switch Suitable for Use in Flash Memory
    • 高压开关适用于闪存
    • US20120081172A1
    • 2012-04-05
    • US12895476
    • 2010-09-30
    • Jonathan Hoang HuynhFeng Pan
    • Jonathan Hoang HuynhFeng Pan
    • H03K17/687
    • G11C16/08G11C8/08H03K17/063
    • A high voltage switch is presented that, rather than relying upon a charge pump to boost the voltage applied to the switches gate in order to compensate for the switch's threshold voltage, a combination of high voltage devices to eliminate the threshold voltage from the switch. This will save on the needed circuit area and reduce the current and, consequently, power consumption. In the exemplary embodiment, the switch circuit passes an input voltage from an input node to an output node in response to an enable signal. The switch includes a level shifter connected to the input node and is connected to receive the enable signal to provide the input voltage as output when the enable signal is asserted. The circuit also includes a first depletion type NMOS transistor that is connected between the input node and a first intermediate node and having a gate connected to receive the output of the level shifter, and a PMOS transistor that is connected between the first intermediate node and the output node and having a gate connected to receive an inverted form of the enable signal.
    • 提出了一种高压开关,而不是依靠电荷泵来升高施加到开关栅极的电压,以补偿开关的阈值电压,高压装置的组合以消除开关的阈值电压。 这将节省所需的电路面积,并减少电流,从而降低功耗。 在示例性实施例中,响应于使能信号,开关电路将输入电压从输入节点传递到输出节点。 该开关包括连接到输入节点的电平移位器,并被连接以接收使能信号,以在使能信号被断言时提供输入电压作为输出。 电路还包括第一耗尽型NMOS晶体管,其连接在输入节点和第一中间节点之间,并且具有连接以接收电平移位器的输出的栅极,以及PMOS晶体管,其连接在第一中间节点和第 输出节点并具有连接的门以接收使能信号的反相形式。
    • 75. 发明授权
    • Level shifter with shoot-through current isolation
    • 电平移位器,具有直通电流隔离
    • US08106701B1
    • 2012-01-31
    • US12895457
    • 2010-09-30
    • Jonathan Hoang HuynhFeng PanQui Vi NguyenTrung Pham
    • Jonathan Hoang HuynhFeng PanQui Vi NguyenTrung Pham
    • H03L5/00
    • G11C16/08G11C16/30H03K19/0013H03K19/018521
    • A level shifter circuit suitable for high voltage applications with shoot-through current isolation is presented. The level shifter receives a first enable signal and receives an input voltage at a first node and supplies an output voltage at a second node. The circuit provides the output voltage from the input voltage in response to the first enable signal being asserted and sets the output node to a low voltage value when the first enable signal is de-asserted. The level shifting circuit includes a depletion type NMOS transistor, having a gate connected to the output node, and a PMOS transistor, having a gate connected to the first enable signal. It also includes a first resistive element that is distinct from the NMOS and PMOS transistors. The NMOS transistor, the PMOS transistor and the first resistive elements are connected in series between the first and second nodes, with the NMOS transistor being connected to the first node. The level shifter further includes a discharge circuit connected to the second node and to receive a second enable signal. The second enable signal is asserted when the first enable signal is de-asserted and is asserted when the first enable signal is de-asserted, and the discharge circuit connects the second node to the low voltage value when the second enable signal is asserted and isolates the second node from ground when the second enable signal is de-asserted.
    • 提出了适用于直流电流隔离的高电压应用的电平移位电路。 电平移位器接收第一使能信号并在第一节点处接收输入电压,并在第二节点处提供输出电压。 响应于第一使能信号被断言,电路提供来自输入电压的输出电压,并且当第一使能信号被解除置位时,将输出节点设置为低电压值。 电平移位电路包括具有连接到输出节点的栅极的耗尽型NMOS晶体管和具有连接到第一使能信号的栅极的PMOS晶体管。 它还包括与NMOS和PMOS晶体管不同的第一电阻元件。 NMOS晶体管,PMOS晶体管和第一电阻元件串联连接在第一和第二节点之间,NMOS晶体管连接到第一节点。 电平移位器还包括连接到第二节点并且接收第二使能信号的放电电路。 当第一使能信号被解除置位时,第二使能信号被置位,并且当第一使能信号被断言时被断言,并且当第二使能信号被断言时,放电电路将第二节点连接到低电压值 当第二使能信号被取消断言时,来自接地的第二节点。
    • 76. 发明授权
    • Charge pump with current based regulation
    • 带电流调节的电荷泵
    • US07973592B2
    • 2011-07-05
    • US12506998
    • 2009-07-21
    • Feng Pan
    • Feng Pan
    • G05F1/10
    • H02M3/073
    • A charge pump system using a current based regulation method, in addition to the typical voltage based regulation methods is presented. The current flow in the charge pump is determined independently of the output voltage. By sensing the current going through the charge pump while its output is being regulated to the target level, the strength of charge pump can be dynamically adjusted in term of regulation level, branch assignment, clock frequency, clock amplitude, and so on. Indirectly sensing the current going through pump (not in serial with output stage to allow additional IR drop) will allow the pumps to have matrix of V and I to better adjust the charge pump parameters for current saving and ripple reduction.
    • 提出了一种基于电流调节方法的电荷泵系统,除了典型的基于电压的调节方法外。 独立于输出电压确定电荷泵中的电流。 通过感测电流泵的输出正在调节到目标电平的电流,可以根据调节电平,分支分配,时钟频率,时钟幅度等动态调整电荷泵的强度。 间接感测通过泵的电流(不是与输出级串联以允许额外的IR降低)将允许泵具有V和I的矩阵,以更好地调节电荷泵参数以实现电流节省和纹波降低。
    • 77. 发明申请
    • Techniques to Reduce Charge Pump Overshoot
    • 减少电荷泵过冲的技术
    • US20110148509A1
    • 2011-06-23
    • US12640820
    • 2009-12-17
    • Feng Pan
    • Feng Pan
    • G05F1/10
    • G11C5/145H02M3/073
    • A charge pump system for supplying an output voltage to a load is described. The charge pump system includes a charge pump connected to receive an input voltage generate from it the output voltage. The system also includes regulation circuitry connected to receive the output voltage and a reference voltage, where the regulation circuitry is connected to the charge pump to regulate the output voltage based upon the values of the reference voltage and the output voltage. During ramp up or a recovery operation the output voltage is initially regulated according to a first level and subsequently regulated to a second level higher than the first level, the second level corresponding to a desired regulated output voltage.
    • 描述用于向负载提供输出电压的电荷泵系统。 电荷泵系统包括连接的电荷泵以接收从其产生的输入电压的输出电压。 该系统还包括连接以接收输出电压和参考电压的调节电路,其中调节电路连接到电荷泵,以基于参考电压和输出电压的值来调节输出电压。 在升高或恢复操作期间,输出电压最初根据第一电平进行调节,并随后被调节到高于第一电平的第二电平,第二电平对应于期望的调节输出电压。
    • 80. 发明申请
    • Security Functional Thin Film and Security Product Containing the Functional Thin Film
    • 安全功能薄膜和包含功能薄膜的安全产品
    • US20100220371A1
    • 2010-09-02
    • US12305966
    • 2008-03-24
    • Xiaowei LiXinyu LiCe LiJing YangFeng PanCaixia LiYu Cao
    • Xiaowei LiXinyu LiCe LiJing YangFeng PanCaixia LiYu Cao
    • B42D15/10B32B5/00C23C14/34B32B9/04
    • B32B37/24B32B37/203B32B2037/246B32B2307/208B32B2309/105B32B2425/00B32B2429/00G09F3/0292G11B5/00808H01F10/132H01F41/18Y10T428/24802Y10T428/265Y10T428/325
    • The present invention provides a security functional thin film and a security product containing such a thin film. The security functional thin film is of an amorphous structure, and possesses soft magnetic characteristics. Large Barkhausen effect can be detected along the in-plane preferred direction of magnetization; and the Large Barkhausen effect significantly attenuates, or no such signal can be detected, in a direction perpendicular to the in-plane preferred direction of magnetization. The thin film has a thickness of 20-300 nm, and the thin film also possesses element encoding characteristics that can be authenticated by experts. The security functional thin film of the present invention can be fabricated by magnetron sputtering web coating process. The security product provided by the present invention has a security information layer formed of the security functional thin film, and can be combined with other security characteristics for use in fabricating security materials such as security threads, security tapes, paper security strip-like inserts, or security labels, and others. Compared with conventional anti-counterfeiting technologies, the instant security functional thin film has more hidden security information, and facilitates enhancement of safety performance of security products.
    • 本发明提供一种安全功能薄膜和包含这种薄膜的安全产品。 安全功能薄膜为非晶结构,具有软磁特性。 沿着平面内优选的磁化方向可以检测到大的巴克豪森效应; 并且大巴克豪森效应在垂直于面内优选磁化方向的方向上显着衰减或不能检测到这样的信号。 该薄膜的厚度为20-300nm,薄膜还具有可由专家认证的元件编码特性。 本发明的安全功能薄膜可以通过磁控溅射网涂布法制造。 由本发明提供的安全产品具有由安全功能薄膜形成的安全信息层,并且可以与用于制造诸如安全螺纹,安全带,纸安全带状插入物等安全材料的其他安全特性组合, 或安全标签等。 与传统防伪技术相比,即时安全功能薄膜具有更多隐藏的安全信息,有利于提高安全产品的安全性能。