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    • 73. 发明授权
    • Flat panel display having light blocking layer
    • 具有遮光层的平板显示器
    • US07282855B2
    • 2007-10-16
    • US10901096
    • 2004-07-29
    • Sang-Il ParkJae-Bon KooHun-Jung Lee
    • Sang-Il ParkJae-Bon KooHun-Jung Lee
    • H01J1/62H01J63/04
    • H01L27/3244H01L51/5284H01L2251/5346
    • A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.
    • 其发光显示装置包括其上形成有薄膜晶体管的绝缘基板。 薄膜晶体管包括源电极和/或漏电极。 钝化层在薄膜晶体管的至少一部分上形成在绝缘基板上,并且在其中形成有与孔电极或漏电极电接触的通孔。 像素电极形成在通孔中。 除了对应于像素电极的区域之外,在钝化层的整个上表面上形成遮光层。 除了与像素电极对应的区域之外,在遮光层的上表面上形成平坦化层。
    • 74. 发明授权
    • Organic electroluminescent display
    • 有机电致发光显示
    • US07211826B2
    • 2007-05-01
    • US10927193
    • 2004-08-27
    • Sang-Il ParkTae-Wook Kang
    • Sang-Il ParkTae-Wook Kang
    • H01L29/04H01L29/15H01L31/036
    • H01L27/3248H01L27/124H01L27/1248H01L27/3223H01L27/3244H01L27/3276
    • An organic electroluminescent display includes a substrate having an array portion with pixels, and a pad portion coupled to an external power supply. A semiconductor structure is formed on the substrate with a source electrode, a drain electrode and a pad. A passivation layer is formed on the semiconductor structure with via holes exposing regions of the source and the drain electrodes at the array portion and the pad at the pad portion. Portions of the passivation layer contacting the via holes between the array portion and the pad portion have the same thickness. A conductive layer fills the via holes. A pixel defining layer is formed over the entire surface of a flattening layer and the conductive layer with pixel regions exposing regions of the conductive layer at the array portion. An organic electroluminescent film is formed at each pixel region.
    • 有机电致发光显示器包括具有带有像素的阵列部分的基板和耦合到外部电源的焊盘部分。 在基板上形成有源电极,漏电极和焊盘的半导体结构。 在半导体结构上形成钝化层,其中通孔暴露阵列部分处的源电极和漏电极的区域以及焊盘部分处的焊盘。 与阵列部分和焊盘部分之间的通孔接触的钝化层的部分具有相同的厚度。 导电层填充通孔。 像素限定层形成在平坦化层的整个表面上,并且导电层具有像素区域,暴露阵列部分处导电层的区域。 在每个像素区域形成有机电致发光膜。
    • 75. 发明授权
    • Flat panel display and fabrication method thereof
    • 平板显示器及其制造方法
    • US07180236B2
    • 2007-02-20
    • US10694941
    • 2003-10-29
    • Jae Bon KooSang-Il Park
    • Jae Bon KooSang-Il Park
    • H05B33/00
    • H01L21/02422H01L21/02532H01L21/02672H01L27/1229H01L27/1277H01L27/3262H01L29/04
    • A flat panel display with a plurality of pixels. Each pixel has at least a first transistor and a second transistor and a semiconductor layer of the first transistor has a mobility which is different from a semiconductor layer of the second transistor.A method for fabricating a flat panel display including at least a first transistor and a second transistor by forming an amorphous silicon film on an insulating substrate and crystallizing the amorphous silicon film into a polysilicon film that is divided into at least a first region having a first mobility and a second region having a second mobility. The method further involves forming a semiconductor layer for the first transistor from the region with the first mobility and the second transistor from the region with the second mobility by patterning the polysilicon film, where the first mobility is different from the second mobility.
    • 具有多个像素的平板显示器。 每个像素具有至少第一晶体管和第二晶体管,并且第一晶体管的半导体层具有不同于第二晶体管的半导体层的迁移率。 一种用于制造平板显示器的方法,所述平板显示器至少包括第一晶体管和第二晶体管,通过在绝缘基板上形成非晶硅膜并将所述非晶硅膜结晶成多晶硅膜,所述多晶硅膜被划分为至少第一区域,所述第一区域具有第一 移动性和具有第二移动性的第二区域。 该方法还包括通过对第一迁移率不同于第二迁移率的多晶硅膜进行构图而从具有第二迁移率的区域形成具有第一迁移率的区域的第一晶体管的半导体层和第二晶体管。