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71. 发明申请

US20090087561A1 METAL AND METALLOID SILYLAMIDES, KETIMATES, TETRAALKYLGUANIDINATES AND DIANIONIC GUANIDINATES USEFUL FOR CVD/ALD OF THIN FILMS 审中-公开
标题翻译：金属和金属氧化物硅酸盐，起始物，四氨基乙酸盐和对硝基苯胺酸盐有利于薄膜的CVD / ALD
公开(公告)号：US20090087561A1
公开(公告)日：2009-04-02
申请号：US12239808
申请日：2008-09-28
申请人： Tianniu CHEN , Chongying Xu , William Hunks , Jeffrey F. Roeder , Thomas H. Baum
发明人： Tianniu CHEN , Chongying Xu , William Hunks , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C07F7/30 , C23C16/18
CPC分类号： C07F7/30 , C23C16/18
摘要： Metal and metalloid precursors useful for forming metal-containing films on substrates, including amide precursors, tetraalkylguanidinate precursors, ketimate and dianionic guanidinate precursors. The precursors of the invention are readily formed and conveniently used to carry out chemical vapor deposition or atomic layer deposition at low temperature, e.g., at temperature below 400° C.
摘要翻译：用于在底物上形成含金属膜的金属和准金属前体，包括酰胺前体，四烷基胍胺前体，酮酸和二阴离子胍基前体。本发明的前体易于形成并且方便地用于在低温例如低于400℃的温度下进行化学气相沉积或原子层沉积。

72. 发明授权

US07361603B2 Passivative chemical mechanical polishing composition for copper film planarization 有权
标题翻译：钝化化学机械抛光组合物用于铜膜平面化
公开(公告)号：US07361603B2
公开(公告)日：2008-04-22
申请号：US11117274
申请日：2005-04-28
申请人： Jun Liu , Mackenzie King , Michael Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Thomas H. Baum
发明人： Jun Liu , Mackenzie King , Michael Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.
摘要翻译：含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂的组合以及使用方法。在CMP抛光期间可以稀释这种CMP组合物，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中以及在CMP期间的铜/ CMP组成界面处存在大量水平的铜离子处理。

73. 发明授权

US07080545B2 Apparatus and process for sensing fluoro species in semiconductor processing systems 失效
标题翻译：用于在半导体处理系统中感测氟物质的装置和方法
公开(公告)号：US07080545B2
公开(公告)日：2006-07-25
申请号：US10273036
申请日：2002-10-17
申请人： Frank Dimeo, Jr. , Philip S. H. Chen , Jeffrey W. Neuner , James Welch , Michele Stawasz , Thomas H. Baum , Mackenzie E. King , Ing-Shin Chen , Jeffrey F. Roeder
发明人： Frank Dimeo, Jr. , Philip S. H. Chen , Jeffrey W. Neuner , James Welch , Michele Stawasz , Thomas H. Baum , Mackenzie E. King , Ing-Shin Chen , Jeffrey F. Roeder
IPC分类号： G01N9/00
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.
摘要翻译：用于检测含有其的气体中的含氟物质的气体检测器和方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的检测器结构布置采用基于微机电系统（MEMS）的器件结构和/或独立的金属元件，其在需要高温感测时用作感测部件并且可选地作为热源。独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

74. 发明授权

US06984417B2 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
标题翻译：钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构
公开(公告)号：US06984417B2
公开(公告)日：2006-01-10
申请号：US09928860
申请日：2001-08-13
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： C23C16/06 , C23C16/00
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15毫米。在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

75. 发明授权

US06316797B1 Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
标题翻译：钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构
公开(公告)号：US06316797B1
公开(公告)日：2001-11-13
申请号：US09251890
申请日：1999-02-19
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： H01L2976
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 &mgr;m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15毫米。在优选实施例中相应的电容器面积（即横向缩放）在约104至约10-2mum2的范围内。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

76. 发明授权

US06277436B1 Liquid delivery MOCVD process for deposition of high frequency dielectric materials 有权
标题翻译：用于沉积高频电介质材料的液体输送MOCVD工艺
公开(公告)号：US06277436B1
公开(公告)日：2001-08-21
申请号：US09216673
申请日：1998-12-18
申请人： Gregory T. Stauf , Jeffrey F. Roeder , Thomas H. Baum
发明人： Gregory T. Stauf , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C23C1640
CPC分类号： H01L28/55 , C23C16/40 , C23C16/4481 , H01L21/31691 , H01L27/10852
摘要： A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N2O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400° C. to about 1200° C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors.
摘要翻译：用于沉积诸如（Ba，Sr）钛酸盐和（Zr，Sn）钛酸盐的电介质材料的液体输送MOCVD方法，其中金属源化合物溶解或悬浮在溶剂中并在约100℃的温度下闪蒸至约300℃，并通过诸如氩气，氮气，氦气，氨等的载气进入化学气相沉积反应器，其中前体蒸气与氧气，臭氧，N 2 O等氧化性共反应气体混合等等，以在约0.1托至约760托的化学气相沉积室压力下在约400℃至约1200℃的温度下将高介电金属氧化物膜沉积在基底上。这种方法可以例如用于形成（Ba，Sr）钛酸盐电介质材料，其中氧化物的总金属含量的至少60原子％为钛。本发明的高介电材料可用于形成用于例如动态随机存取存储器和高频电容器的应用的电容微电子器件结构。

77. 发明授权

US07750173B2 Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films 有权
标题翻译：具有螯合配体的钽酰氨基复合物，可用于TaN和Ta205薄膜的CVD和ALD
公开(公告)号：US07750173B2
公开(公告)日：2010-07-06
申请号：US12013433
申请日：2008-01-12
申请人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C07F9/00 , C01G35/00
CPC分类号： C23C16/18 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.
摘要翻译：公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层和足够的碳，使得含Ta层是无定形的。根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备气氛，例如任选地含有还原剂的气体或等离子体。

78. 发明申请

US20100062150A1 PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 有权
标题翻译：用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物
公开(公告)号：US20100062150A1
公开(公告)日：2010-03-11
申请号：US12619165
申请日：2009-11-16
申请人： Chongying Xu , Tianniu Chen , Thomas M. Cameron , Jeffrey F. Roeder , Thomas H. Baum
发明人： Chongying Xu , Tianniu Chen , Thomas M. Cameron , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： B05D5/12
CPC分类号： C23C14/088 , C07F17/00 , C23C16/409 , C23C16/45553
摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
摘要翻译：用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布材料制造闪存等微电子器件。

79. 发明申请

US20090137122A1 METHOD OF PASSIVATING CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER FILM PLANARIZATION PROCESSES 有权
标题翻译：铜膜平面化方法的化学机械抛光组合物的处理方法
公开(公告)号：US20090137122A1
公开(公告)日：2009-05-28
申请号：US12234199
申请日：2008-09-19
申请人： Jun Liu , Mackenzie King , Michael S. Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Peter Wrschka , Thomas H. Baum
发明人： Jun Liu , Mackenzie King , Michael S. Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Peter Wrschka , Thomas H. Baum
IPC分类号： H01L21/306
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
摘要翻译：通过稀释钝化CMP组合物并确定稀释程度与铜的静态蚀刻速率之间的关系的方法。这种关系可以用于在CMP抛光期间控制CMP组成，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中和在铜/ CMP处存在大量的铜离子组合界面。

80. 发明申请

US20090074965A1 PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 有权
标题翻译：用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物
公开(公告)号：US20090074965A1
公开(公告)日：2009-03-19
申请号：US12282511
申请日：2007-03-12
申请人： Chongying Xu , Tianniu Chen , Thomas M. Cameron , Jeffrey F. Roeder , Thomas H. Baum
发明人： Chongying Xu , Tianniu Chen , Thomas M. Cameron , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C23C16/44 , C09D7/12 , C07F3/00
CPC分类号： C23C14/088 , C07F17/00 , C23C16/409 , C23C16/45553
摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
摘要翻译：用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。前体具有式（I）的式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，其中每个独立地选自氢，C 1 -C 12烷基，C 1 -C 12氨基，C 6 -C 10芳基，C 1 -C 12烷氧基，C 3 -C 6烷基甲硅烷基，C 2 -C 12烯基，R 1 R 2 R 3 N NR 3，其中R 1，R 2和R 3可以是彼此相同或不同，并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现均匀涂布的高介电常数材料制造闪存和其他微电子器件。

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