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72. 发明申请

US20070158701A1 Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes 有权
标题翻译：过多的圆孔屏蔽栅沟槽（SGT）MOSFET器件和制造工艺
公开(公告)号：US20070158701A1
公开(公告)日：2007-07-12
申请号：US11321957
申请日：2005-12-28
申请人： Hong Chang , Sung-Shan Tai , Tiesheng Li , Yu Wang
发明人： Hong Chang , Sung-Shan Tai , Tiesheng Li , Yu Wang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L21/76232 , H01L29/4236 , H01L29/42376 , H01L29/66621 , H01L29/7834
摘要： This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a shielded gate trench (SGT) structure below and insulated from the trenched gate. The SGT structure is formed substantially as a round hole having a lateral expansion extended beyond the trench gate and covered by a dielectric linen layer filled with a trenched gate material. The round hole is formed by an isotropic etch at the bottom of the trenched gate and is insulated from the trenched gate by an oxide insulation layer. The round hole has a lateral expansion beyond the trench walls and the lateral expansion serves as a vertical alignment landmark for controlling the depth of the trenched gate. The MOSFET device has a reduced gate to drain capacitance Cgd depending on the controllable depth of the trenched gate disposed above the SGT structure formed as a round hole below the trenched gate.
摘要翻译：本发明公开了一种改进的沟槽金属氧化物半导体场效应晶体管（MOSFET）器件，其包括被包围在设置在衬底的底表面上的漏区以上的体区中的源极区包围的沟槽栅极。 MOSFET单元进一步包括屏蔽栅极沟槽（SGT）结构，并且与沟槽栅极绝缘。 SGT结构基本上形成为具有延伸超过沟槽栅极并由填充有沟槽栅极材料的电介质亚麻层覆盖的圆形孔。圆形孔通过在沟槽底部的各向同性蚀刻形成，并且通过氧化物绝缘层与沟槽栅极绝缘。圆孔具有超出沟槽壁的横向膨胀，并且横向膨胀用作用于控制沟槽浇口的深度的垂直对准界标。 MOSFET器件具有减小的栅极到漏极电容Cgd，这取决于设置在形成为沟槽栅极下方的圆孔的SGT结构之上的沟槽栅极的可控深度。

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