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71. 发明授权

US6071055A Front end vacuum processing environment 失效
标题翻译：前端真空加工环境
公开(公告)号：US6071055A
公开(公告)日：2000-06-06
申请号：US940850
申请日：1997-09-30
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： H01L21/00 , H01L21/677 , B65G51/02
CPC分类号： H01L21/67161 , H01L21/67167 , H01L21/67184 , H01L21/6719 , H01L21/67742 , H01L21/67745 , Y10S414/137 , Y10S414/139
摘要： The present invention provides a wafer process system that incorporates a multiple wafer processing system, such as a tandem wafer processing system, and a front end staging apparatus. The front end staging apparatus includes a first transfer chamber in communication with a pair of loadlocks for introducing wafers into the system. A robot within the first transfer chamber moves individual wafers between the loadlocks, optional single wafer process chambers radially disposed about and in communication with the first transfer chamber, and a pair of intermediate staging chambers. The intermediate staging chambers communicate with both the first transfer chamber and a second transfer chamber of the tandem process system. A robot within the second transfer chamber moves the wafers, in tandem, between the intermediate staging chambers and tandem process chambers disposed about the periphery and communicating with the second transfer chamber.
摘要翻译：本发明提供一种结合了多晶片处理系统的晶片工艺系统，例如串联晶片处理系统和前端分段装置。前端分段装置包括与用于将晶片引入系统的一对负载锁连通的第一传送室。第一传送室内的机器人移动负载锁之间的单个晶片，径向设置在第一传送室周围并与第一传送室连通的可选单晶片处理室以及一对中间分级室。中间分级室与串联过程系统的第一传送室和第二传送室两者连通。第二传送室内的机器人一起移动晶片在中间分级室和围绕周边设置并与第二传送室连通的串联处理室之间。

72. 发明授权

US5951775A Apparatus for full wafer deposition 失效
公开(公告)号：US5951775A
公开(公告)日：1999-09-14
申请号：US461575
申请日：1995-06-02
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： H01L21/203 , C23C14/50 , C23C14/56 , C23C16/44 , C23C16/458 , H01L21/205 , C23C16/00
CPC分类号： C23C16/4585 , C23C14/50 , C23C14/564 , C23C16/4401
摘要： A readily removable deposition shield for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The deposition shield includes a shield of cylindrical configuration (or other configuration conformed to the internal shape of the substrate and the chamber) which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and the substrate support. Collectively, these components prevent deposition on the chamber and hardware outside the processing region. Also, the cylindrical shield and the shield ring may be removed as a unit. Locating means such as pins may be mounted or formed in the support about the periphery of the substrate for centering the substrate. Also, a peripheral groove may be formed in the substrate support peripheral to the substrate, for preventing material deposited on the support peripheral to the substrate from sticking to the substrate. The substrate is supported on spacers mounted on the substrate support; the resulting gap between the substrate and the support also prevents the material deposited on the support from bonding to the substrate. The result of the various features is an effective shield which allows long intervals before the shield must be removed for cleaning or replacement and which is easy to remove when necessary. In addition, the entire upper surface of the substrate is available for processing.

73. 发明授权

US5922133A Multiple edge deposition exclusion rings 失效
标题翻译：多边缘沉积排除环
公开(公告)号：US5922133A
公开(公告)日：1999-07-13
申请号：US928995
申请日：1997-09-12
申请人： Avi Tepman , James van Gogh
发明人： Avi Tepman , James van Gogh
IPC分类号： C23C16/04 , C23C16/458 , H01L21/687 , C23C16/00 , C23C14/00
CPC分类号： H01L21/68735 , C23C14/50 , C23C14/564 , H01L21/68721
摘要： An exclusion ring system for depositing a film with multiple exclusion zones on a substrate in a deposition apparatus having a pedestal for supporting the substrate at different positions. A first exclusion ring is positioned above the substrate and pedestal and extends over a first zone overlying the perimeter of the substrate up to a first inner periphery. A second ring is positioned between the first ring and the substrate and extends over a second zone overlying the perimeter of the substrate outwardly of the first zone to a second inner periphery lying outwardly of the first inner periphery. When the pedestal is in a raised position, it supports the rings. When the pedestal is in a lowered position, the rings are supported by legs resting on a stationary wall, the legs of the first ring being effectively longer than the legs of the second ring so that the rings are sequentially moved away from the substrate as the pedestal is lowered. Initially, the first ring is in a position proximate the substrate to prevent deposition of the first film over the first zone. Then the pedestal is lowered to a position where the first ring is moved away from the substrate by its leg being supported. This leaves the second ring as an effective exclusion ring at the second position so that the second film is deposited over the first and over the second zone and also extends outwardly to cover and protect the edge of the first film.
摘要翻译：一种用于在具有用于在不同位置支撑衬底的基座的沉积设备中的衬底上沉积具有多个排除区域的膜的排除环系统。第一排除环位于衬底和基座上方并且在覆盖衬底的周边的第一区域上延伸到第一内周边。第二环定位在第一环和衬底之间并且在覆盖第一区域外部的衬底的周边上的第二区域上延伸到位于第一内周边外侧的第二内周边。当基座处于升高位置时，它支撑环。当基座处于降低位置时，环由搁置在固定壁上的腿支撑，第一环的腿比第二环的腿部有效地长，使得环从基底依次移动离开基底底座下降。最初，第一环位于靠近衬底的位置，以防止第一膜在第一区上沉积。然后将基座下降到第一环被支撑的腿部从衬底移开的位置。这使得第二环在第二位置处作为有效的排除环，使得第二膜沉积在第一和第二区上方并且还向外延伸以覆盖并保护第一膜的边缘。

74. 发明授权

US5803977A Apparatus for full wafer deposition 失效
标题翻译：全晶圆沉积装置
公开(公告)号：US5803977A
公开(公告)日：1998-09-08
申请号：US567601
申请日：1995-12-05
申请人： Avi Tepman , Robert E. Davenport
发明人： Avi Tepman , Robert E. Davenport
IPC分类号： B65G49/07 , C23C14/50 , C23C14/56 , C23C16/44 , C23C16/458 , H01L21/203 , H01L21/205 , H01L21/265 , H01L21/31 , H01L21/683 , C23C16/00
CPC分类号： C23C14/564 , C23C14/50 , C23C16/4401 , C23C16/4585
摘要： A readily removable deposition shield assembly for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The shield assembly includes a shield member which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and a deposition ring. The deposition ring removably rests upon a flange extending from the outer periphery of a substrate support pedestal. Collectively, these components prevent deposition on the chamber and hardware outside the processing region.
摘要翻译：公开了用于处理诸如化学气相沉积（CVD），离子注入或物理气相沉积（PVD）或溅射室的腔室的容易移除的沉积屏蔽组件。屏蔽组件包括屏蔽构件，其被安装到室以便于诸如通过螺钉的移除，并且沿着衬底支撑件的周边限定空间。屏蔽环插入到外围空间中，因此以可移动的方式安装并且自动围绕基板居中。屏蔽环与圆柱形屏蔽和沉积环重叠。沉积环可拆卸地搁置在从基板支撑基座的外周延伸的凸缘上。总的来说，这些部件防止在处理区域外的室和硬件上沉积。

75. 发明授权

US5762748A Lid and door for a vacuum chamber and pretreatment therefor 失效
公开(公告)号：US5762748A
公开(公告)日：1998-06-09
申请号：US658784
申请日：1996-06-05
申请人： Thomas Banholzer , Dan Marohl , Avi Tepman , Donald M. Mintz
发明人： Thomas Banholzer , Dan Marohl , Avi Tepman , Donald M. Mintz
IPC分类号： H01L21/302 , B24C1/00 , C23C14/56 , H01J37/16 , H01J37/32 , H01L21/02 , H05H1/00 , C23C16/00
CPC分类号： H01J37/32458 , B24C1/00 , C23C14/564 , H01J37/16 , Y10S156/914
摘要： Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part be cleaned ultrasonically to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

76. 发明授权

US5735339A Semiconductor processing apparatus for promoting heat transfer between isolated volumes 失效
标题翻译：用于促进隔离体积之间传热的半导体处理装置
公开(公告)号：US5735339A
公开(公告)日：1998-04-07
申请号：US567625
申请日：1995-12-05
申请人： Robert E. Davenport , Avi Tepman
发明人： Robert E. Davenport , Avi Tepman
IPC分类号： C23C14/24 , C23C14/50 , C23C14/54 , C23C14/56 , F16J15/08 , H01L21/00 , H01L21/02 , H01L21/68 , H01L21/683 , B25B11/00 , F28F7/00
CPC分类号： H01L21/67109 , C23C14/541 , C23C14/564 , H01L21/67103 , H01L21/68 , H01L21/6831 , Y10S269/903 , Y10S277/913 , Y10S277/922 , Y10S277/932 , Y10T279/23 , Y10T403/477 , Y10T403/479
摘要： Apparatus for promoting heat transfer between a first volume (chamber volume) and a second volume (expandable, substrate support platform volume). Specifically, the apparatus comprises: a chamber defining a chamber volume that contains a chamber atmosphere, e.g., a partial vacuum; a substrate support platform that defines an expandable volume that contains a heat transfer medium, e.g., air; and a seal that isolates the chamber volume from the heat transfer medium. The substrate support platform further comprises: a substrate support platen that has a first surface located within the chamber volume and a second surface located within the expandable volume; a housing sealed to the second surface of the substrate support platen; and a expandable member such as a bellows, attached to the housing, to provide for expansion of the expandable volume that is defined by the housing and the bellows. The housing is typically fabricated of metal and the substrate support is typically fabricated of ceramic. The seal forms a hermetic junction between the ceramic substrate support and the metal housing.
摘要翻译：用于促进第一容积（室容积）和第二容积（可扩展的衬底支撑平台体积）之间的热传递的装置。具体地说，该装置包括：限定腔室容积的室，其容纳室气氛，例如部分真空; 衬底支撑平台，其限定包含传热介质例如空气的可膨胀体积; 以及隔离室体积与传热介质的密封。衬底支撑平台还包括：衬底支撑压板，其具有位于腔体内的第一表面和位于可膨胀体积内的第二表面; 密封到所述基板支撑台板的第二表面的壳体; 以及附接到壳体的可膨胀构件，例如波纹管，以提供由壳体和波纹管限定的可膨胀体积的膨胀。壳体通常由金属制成，并且衬底支撑件通常由陶瓷制成。密封件在陶瓷基板支撑件和金属外壳之间形成密封接合部。

77. 发明授权

US5540821A Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing 失效
标题翻译：用于在半导体处理期间调整晶片和PVD靶之间的距离的方法和装置
公开(公告)号：US5540821A
公开(公告)日：1996-07-30
申请号：US092847
申请日：1993-07-16
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： C23C14/34 , H01L21/203 , H01L21/68 , H01L21/687 , C23C14/54 , B65G25/00 , C23C14/50 , C23C16/04
CPC分类号： H01L21/68785 , H01L21/68792 , Y10S414/135 , Y10S414/139
摘要： A heater and pedestal actuator is provided to actuate the pedestal of a deposition chamber from a first position wherein a wafer may be placed thereon to a second position adjacent to the deposition target. To adjust the inward travel of the heater to compensate for target erosion, the actuator includes a worm drive apparatus driven by a stepper motor. The worm drive is pitched, and the stepper motor is selected, to allow fine movement of the heater on the order of less than 0.01 mm for each arcuate step of the stepper motor. A computer is used to actuate the stepper motor, and cause additional stepper motor actuation, to increase the travel of the heater toward the target to compensate for target erosion. Additionally, the computer may vary the speed of the worm drive rotation, to create different heater travel speeds within the chamber.
摘要翻译：提供加热器和基座致动器以从第一位置致动沉积室的基座，其中晶片可以放置在第一位置到与沉积靶相邻的第二位置。为了调整加热器的向内行程以补偿目标腐蚀，致动器包括由步进电机驱动的蜗杆驱动装置。蜗杆传动器倾斜，并且选择步进电机，以允许步进电机的每个弧形步长加热器的精细运动小于0.01mm。计算机用于致动步进电机，并引起额外的步进电机致动，以增加加热器朝向目标的行程以补偿目标侵蚀。此外，计算机可以改变蜗杆驱动器旋转的速度，以在腔室内产生不同的加热器行进速度。

78. 发明授权

US5511799A Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential 失效
标题翻译：用于桥接具有热膨胀差的材料的半导体加工装置中的密封装置
公开(公告)号：US5511799A
公开(公告)日：1996-04-30
申请号：US73029
申请日：1993-06-07
申请人： Robert E. Davenport , Avi Tepman
发明人： Robert E. Davenport , Avi Tepman
IPC分类号： C23C14/24 , C23C14/50 , C23C14/54 , C23C14/56 , F16J15/08 , H01L21/00 , H01L21/02 , H01L21/68 , H01L21/683
CPC分类号： H01L21/67109 , C23C14/541 , C23C14/564 , H01L21/67103 , H01L21/68 , H01L21/6831 , Y10S269/903 , Y10S277/913 , Y10S277/922 , Y10S277/932 , Y10T279/23 , Y10T403/477 , Y10T403/479
摘要： The present invention pertains to an apparatus useful in semiconductor processing. The apparatus can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3.times.10.sup.-3 in./in./.degree.C., measured at 600.degree. C., between the surfaces to be bridged by the thin, metal-comprising layer.
摘要翻译：本发明涉及一种可用于半导体处理的装置。该装置可用于提供密封件，其能够使半导体处理室的第一部分在第一压力下操作，同时半导体处理室的第二部分在第二不同压力下操作。密封装置能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热装置进行热传递的压力下。密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离其他。优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。本发明特别有用，当线性膨胀系数在600℃下至少为3×10 -3 in / in.in℃时，待被薄金属包覆的表面之间桥接层。

79. 发明授权

US5507499A Method of sealing useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential 失效
标题翻译：用于桥接具有热膨胀差的材料的半导体加工装置中的密封方法
公开(公告)号：US5507499A
公开(公告)日：1996-04-16
申请号：US436057
申请日：1995-05-05
申请人： Robert E. Davenport , Avi Tepman
发明人： Robert E. Davenport , Avi Tepman
IPC分类号： C23C14/24 , C23C14/50 , C23C14/54 , C23C14/56 , F16J15/08 , H01L21/00 , H01L21/02 , H01L21/68 , H01L21/683
CPC分类号： H01L21/67109 , C23C14/541 , C23C14/564 , H01L21/67103 , H01L21/68 , H01L21/6831 , Y10S269/903 , Y10S277/913 , Y10S277/922 , Y10S277/932 , Y10T279/23 , Y10T403/477 , Y10T403/479
摘要： The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure.The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm).The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3.times.10.sup.-3 in./in./.degree.C., measured at 600.degree. C., between the surfaces to be bridged by the thin, metal-comprising layer.
摘要翻译：本发明涉及一种在半导体处理中有用的装置和方法。该装置和方法可用于提供密封件，其能够使半导体处理室的第一部分在第一压力下操作，同时半导体处理室的第二部分在第二不同压力下操作。密封装置和方法能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热的热传递的压力手段。密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离其他。优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。本发明特别有用，当线性膨胀系数在600℃下至少为3×10 -3 in / in.in℃时，待被薄金属包覆的表面之间桥接层。

80. 发明授权

US5447409A Robot assembly 失效
标题翻译：机器人装配
公开(公告)号：US5447409A
公开(公告)日：1995-09-05
申请号：US226101
申请日：1994-04-11
申请人： Howard Grunes , Avi Tepman , Robert Lowrance
发明人： Howard Grunes , Avi Tepman , Robert Lowrance
IPC分类号： B25J9/10 , B25J9/12 , B25J21/00 , H01L21/673 , H01L21/677 , B25J18/00
CPC分类号： B25J9/107 , B25J21/005 , B25J9/126 , H01L21/67742 , Y10S414/13 , Y10S414/135 , Y10S414/139 , Y10T74/20317
摘要： A robot assembly, including a central hub, has two arms arranged for independent rotation about the hub. Two carriers, oriented 180.degree. apart from each other, are coupled to an end of each of the arms. A drive is provided for rotating the arms in opposite directions to extend one or the other of said carriers radially from said central hub, and for rotating the arms in the same direction to effect rotation of the carriers.
摘要翻译：包括中心轮毂的机器人组件具有布置成围绕轮毂独立旋转的两个臂。两个彼此相隔180度的载体被联接到每个臂的端部。提供驱动器用于沿相反方向旋转臂以使所述载体中的一个或另一个从所述中心毂径向延伸，并且用于沿相同方向旋转臂以实现载体的旋转。

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