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    • 72. 发明授权
    • Analytical model producing method and analytical model producing apparatus
    • 分析模型制作方法和分析模型制作装置
    • US07395190B2
    • 2008-07-01
    • US10073008
    • 2002-02-12
    • Masayuki HariyaYoshimitsu HiroYoshiyuki YamamotoHiromitsu Tokisue
    • Masayuki HariyaYoshimitsu HiroYoshiyuki YamamotoHiromitsu Tokisue
    • G06G7/64
    • G06F17/5018
    • The present invention provides an analytical model preparing apparatus which reduces the user's labor of template selecting operation by selecting and presenting an appropriate template from among a plurality of already prepared templates. The analytical model preparing apparatus of the invention comprises means for entering a shape model to be analyzed; a database which associates at least one already prepared shape model with the analytical model prepared for such an already prepared shape model, and registers the same; means for collating the above-mentioned shape model to be analyzed with at least one already prepared shape model; analytical model preparing means for preparing at least one analytical model corresponding to the shape model to be analyzed, by use of analytical model preparing information prepared for the above-mentioned already prepared shape model, in accordance with the result of collation; and mesh quality evaluating means for calculating a mesh quality evaluation value for the analytical model corresponding to at least one prepared shape model to be analyzed.
    • 本发明提供了一种分析模型制备装置,其通过从多个已经准备好的模板中选择和呈现适当的模板来减少用户对模板选择操作的劳动。 本发明的分析模型制备装置包括用于输入要分析的形状模型的装置; 将至少一个已经准备好的形状模型与为这种已经准备好的形状模型准备的分析模型相关联的数据库,并将其注册; 用于将上述具有至少一个已经准备好的形状模型进行分析的形状模型整理的装置; 分析模型制备装置,用于根据对照结果,通过使用为上述已经制备的形状模型制备的准备信息的分析模型来制备对应于待分析的形状模型的至少一个分析模型; 以及用于计算与要分析的至少一个准备形状模型相对应的分析模型的网格质量评估值的网格质量评估装置。
    • 79. 发明授权
    • Process for producing polyetheresteramides
    • 生产聚醚酯酰胺的方法
    • US4587309A
    • 1986-05-06
    • US724611
    • 1985-04-18
    • Chiaki TanakaMakoto KondouYoshiyuki Yamamoto
    • Chiaki TanakaMakoto KondouYoshiyuki Yamamoto
    • C08G69/00C08G69/44C08F283/00C08G63/76C08G69/48C08L67/00
    • C08G69/44
    • The high polymerization degree polyetheresteramides without any gelated materials and with superior color tones are obtained in a short time through the polycondensing interaction carried out between (A) one or more than two polyamide forming components selected from lactams and aminocarboxylic acids as well as the salts of substantially-equal quantities of diamines and dicarboxylic acid and (B) the polyetherester forming components consisting of the substantially-equal quantities of dicarboxylic acids and poly(alkylene oxide) glycols in the presence of 0.001 to 0.5 percent by weight of the mixtures composed of antimony oxides/organic tin compounds at the ratios of 80/20 to 30/70 by weight and more preferably in the co-presence of 0.0005 to 0.5 percent by weight of phosphoric compounds.
    • 通过在(A)一种或多于两种选自内酰胺和氨基羧酸的聚酰胺形成组分中进行的缩聚相互作用,在短时间内获得没有任何胶凝材料和优异色调的高聚合度聚醚酯酰胺以及 基本上相等量的二胺和二羧酸和(B)在由锑组成的混合物的0.001至0.5重量%的存在下由基本上相等量的二羧酸和聚(环氧烷)二醇组成的聚醚酯形成组分 氧化物/有机锡化合物,其比例为80/20〜30/70,更优选为0.0005〜0.5重量%的磷酸化合物共存。
    • 80. 发明授权
    • Method of manufacturing GaN-based film
    • 制造GaN基膜的方法
    • US08697564B2
    • 2014-04-15
    • US13283963
    • 2011-10-28
    • Shinsuke FujiwaraKoji UematsuYoshiyuki YamamotoIssei Satoh
    • Shinsuke FujiwaraKoji UematsuYoshiyuki YamamotoIssei Satoh
    • H01L21/28H01L21/3205
    • C30B29/406C30B25/02H01L33/007H01L33/0079
    • A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
    • 制造GaN基膜的方法包括以下步骤:制备复合基板,该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜,单晶膜相对于垂直于单晶主表面的轴线具有三重对称性 并且在复合衬底中的单晶膜的主表面上形成GaN基膜,复合衬底中的单晶膜是SiC膜。 因此,提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。