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71. 发明公开

EP2553735A4 SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE SOLAR CELL, INCLUDING STRUCTURE AND METHODS OF MANUFACTURE 有权
标题翻译：选择屏蔽的电接触和资助，以钝化介电层中高效率晶体太阳能电池，用于生产结构和工艺
公开(公告)号：EP2553735A4
公开(公告)日：2016-06-29
申请号：EP11760277
申请日：2011-03-25
申请人： TETRASUN INC
发明人： CRAFTS DOUGLAS , SCHULTZ-WITTMAN OLIVER
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/0352 , H01L31/06 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02167 , H01L31/02363 , H01L31/02366 , H01L31/03529 , H01L31/1804 , H01L31/186 , H01L31/1868 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency.

72. 发明公开

EP3309845A3 SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE SOLAR CELL, INCLUDING STRUCTURE AND METHODS OF MANUFACTURE 审中-公开
公开(公告)号：EP3309845A3
公开(公告)日：2018-06-27
申请号：EP17201715.4
申请日：2011-03-25
申请人： Tetrasun, Inc.
发明人： CRAFTS, Douglas E. , SCHULTZ-WITTMAN, Oliver
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/06 , H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0352
CPC分类号： H01L31/022425 , H01L31/02167 , H01L31/02363 , H01L31/02366 , H01L31/03529 , H01L31/1804 , H01L31/186 , H01L31/1868 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency.

73. 发明公开

EP3309845A2 SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE SOLAR CELL, INCLUDING STRUCTURE AND METHODS OF MANUFACTURE 审中-公开
标题翻译：高效率晶体太阳电池中通过钝化介电层屏蔽电接触和掺杂，包括结构和制造方法
公开(公告)号：EP3309845A2
公开(公告)日：2018-04-18
申请号：EP17201715.4
申请日：2011-03-25
申请人： Tetrasun, Inc.
发明人： CRAFTS, Douglas E. , SCHULTZ-WITTMAN, Oliver
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/06 , H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0352
CPC分类号： H01L31/022425 , H01L31/02167 , H01L31/02363 , H01L31/02366 , H01L31/03529 , H01L31/1804 , H01L31/186 , H01L31/1868 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency.
摘要翻译：利用表面纹理结合钝化电介质层的太阳能电池结构和形成方法提供了一种实用且可控的技术，通过钝化电介质层在导电层和下面的衬底之间形成电接触，实现了良好的表面钝化和电与高效率太阳能电池所需的低复合损耗接触。有意修改钝化介电层以允许与衬底直接接触或隧道势垒接触。额外的P-N结和掺杂剂梯度被公开以进一步限制损耗并提高效率。

74. 发明公开

EP2612366A4 FINE LINE METALLIZATION OF PHOTOVOLTAIC DEVICES BY PARTIAL LIFT-OFF OF OPTICAL COATINGS 审中-公开
公开(公告)号：EP2612366A4
公开(公告)日：2017-11-22
申请号：EP11799603
申请日：2011-02-15
申请人： TETRASUN INC
发明人： SCHULTZ-WITTMANN OLIVIER , CRAFTS DOUGLAS , DECEUSTER DENIS , TURNER ADRIAN
IPC分类号： H01L31/0248 , H01L31/0216 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02168 , Y02E10/50
摘要： A metal grid contact and dielectric pattern on a layer requiring conductive contact in a photovoltaic device. The invention includes, in one aspect, forming a metal film; forming an etch resist over the metal film by, e.g., directly writing and in-situ curing the etch resist using, e.g., ink-jetting or screen-printing; etching the metal film leaving the resist pattern and a metal grid contact pattern under the etch resist intact; forming a dielectric layer over the etch resist; and removing the resist pattern and the dielectric over the etch resist, leaving a substantially co-planar metal grid contact and dielectric pattern. The metal grid contact pattern may form the front and/or back contact electrode of a solar cell; and the dielectric layer may be an optical reflection or antireflection layer. The layer requiring contact may be multifunctional providing its own passivation, such that passivation is substantially not required in the dielectric layer.

75. 发明公开

EP2912694A1 METHODS OF FORMING SOLAR CELLS 审中-公开
标题翻译：形成太阳能电池的方法
公开(公告)号：EP2912694A1
公开(公告)日：2015-09-02
申请号：EP13848914.1
申请日：2013-10-24
申请人： Tetrasun, Inc.
发明人： CRAFTS, Douglas, E. , SCHULTZ-WITTMANN, Oliver , TURNER, Adrian, B. , Ong, Qin Yang
IPC分类号： H01L31/04 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/18 , H01L31/02008 , H01L31/02168 , H01L31/022425 , H01L31/02363 , Y02E10/50
摘要： Methods of fabricating conductive patterns over a solar cell structure are provided, in which a patterned resist layer is provided over an anti-reflective coating layer formed over a solar cell structure. The patterned resist layer is used to etch the exposed portion of the anti-reflective coating, and a metal seed layer is provided over the resist layer and the exposed portion of the solar cell structure's surface. The metal seed layer is selectively removed from over the patterned resist layer without removal from the exposed portion of the surface of the solar cell structure. Different thermal conductivities of the patterned resist layer and the solar cell structure's surface facilitate the selective removal of the seed layer from over the resist layer. Also provided are methods of facilitating simultaneous fabrication of conductive patterns over a plurality of solar cell structures using one or more frame structures.
摘要翻译：提供了在太阳能电池结构上制造导电图案的方法，其中在太阳能电池结构上形成的抗反射涂层上提供图案化的抗蚀剂层。使用图案化的抗蚀剂层来蚀刻抗反射涂层的暴露部分，并且在抗蚀剂层和太阳能电池结构的表面的暴露部分上提供金属种子层。从图案化的抗蚀剂层上选择性地去除金属种子层，而不从太阳能电池结构的表面的暴露部分移除。图案化的抗蚀剂层和太阳能电池结构表面的不同导热性有助于选择性地从抗蚀剂层上去除籽晶层。还提供了促进使用一个或多个框架结构在多个太阳能电池结构上同时制造导电图案的方法。

76. 发明公开

EP2807679A4 SELECTIVE REMOVAL OF A COATING FROM A METAL LAYER, AND SOLAR CELL APPLICATIONS THEREOF 审中-公开
标题翻译：金属层的涂层和太阳能电池应用程序的选择性脱除
公开(公告)号：EP2807679A4
公开(公告)日：2015-08-05
申请号：EP13741480
申请日：2013-01-23
申请人： TETRASUN INC
发明人： TURNER ADRIAN BRUCE , ONG QING YUAN , SCHULTZ-WITTMANN OLIVER
IPC分类号： H01L31/0224
CPC分类号： H01L31/1868 , B23K26/40 , H01L21/76894 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/022441 , H01L31/1884 , H01L31/1888 , Y02E10/50 , Y02E10/52
摘要： A method and resulting structure of patterning a metal film pattern over a substrate, including forming a metal film pattern over the substrate; depositing a coating over the substrate surface and the metal film pattern; and removing the coating over the metal film pattern by laser irradiation. The substrate and coating do not significantly interact with the laser irradiation, and the laser irradiation interacts with the metal film pattern and the coating, resulting in the removal of the coating over the metal film pattern. The invention offers a technique for the formation of a metal pattern surrounded by a dielectric coating for solar cells, where the dielectric coating may function as an antireflection coating on the front surface, internal reflector on the rear surface, and may further may function as a dielectric barrier for subsequent electroplating of metal patterns on either surface.

77. 发明公开

EP2553735A2 SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE SOLAR CELL, INCLUDING STRUCTURE AND METHODS OF MANUFACTURE 有权
标题翻译：选择屏蔽的电接触和资助，以钝化介电层中高效率晶体太阳能电池，用于生产结构和工艺
公开(公告)号：EP2553735A2
公开(公告)日：2013-02-06
申请号：EP11760277.1
申请日：2011-03-25
申请人： Tetrasun, Inc.
发明人： CRAFTS, Douglas , SCHULTZ-WITTMAN, Oliver
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/06 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02167 , H01L31/02363 , H01L31/02366 , H01L31/03529 , H01L31/1804 , H01L31/186 , H01L31/1868 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency.
摘要翻译：太阳能电池结构和其利用结合的表面纹理与负债婷电介质层，以提供上形成的导电层之间的电接触，并通过钝化婷电介质层下面的衬底，同时实现良好的表面钝化和电的实际的和可控的技术形成方法具有低重组损失接触，根据需要进行高效率的太阳能电池。负债廷介电层被有意地修改，以允许直接接触，或隧道势垒接触，与所述基底上。附加的P-N结，以及掺杂剂渐变，是游离缺失盘つweiterer限制损失和提高效率。

78. 发明公开

EP4350783A3 HIGH-EFFICIENCY SOLAR CELL STRUCTURES AND METHODS OF MANUFACTURE 审中-实审
公开(公告)号：EP4350783A3
公开(公告)日：2024-07-10
申请号：EP23211757.2
申请日：2010-04-21
申请人： Tetrasun, Inc.
发明人： SCHULTZ-WITTMANN, Oliver , DE CEUSTER, Denis
IPC分类号： H01L31/00 , H01L31/18 , H01L31/0216
CPC分类号： H01L31/1868 , H01L31/02167 , H01L31/022425 , H01L31/1872 , H01L31/1864 , Y02E10/548 , Y02P70/50 , H01L31/0745
摘要： Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.

79. 发明公开

EP4350782A3 HIGH-EFFICIENCY SOLAR CELL STRUCTURES AND METHODS OF MANUFACTURE 审中-实审
公开(公告)号：EP4350782A3
公开(公告)日：2024-07-10
申请号：EP23211750.7
申请日：2010-04-21
申请人： Tetrasun, Inc.
发明人： Schultz-Wittmann, Oliver , De Ceuster, Denis
IPC分类号： H01L31/18 , H01L31/0745
CPC分类号： H01L31/1868 , H01L31/02167 , H01L31/022425 , H01L31/1872 , H01L31/1864 , Y02E10/548 , Y02P70/50 , H01L31/0745
摘要： Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.

80. 发明公开

EP4350782A2 HIGH-EFFICIENCY SOLAR CELL STRUCTURES AND METHODS OF MANUFACTURE 审中-实审
公开(公告)号：EP4350782A2
公开(公告)日：2024-04-10
申请号：EP23211750.7
申请日：2010-04-21
申请人： Tetrasun, Inc.
发明人： Schultz-Wittmann, Oliver , De Ceuster, Denis
IPC分类号： H01L31/18
摘要： Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.

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