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71. 发明申请

US20090168784A1 STORAGE SUBSYSTEM 有权
标题翻译：存储子系统
公开(公告)号：US20090168784A1
公开(公告)日：2009-07-02
申请号：US12020216
申请日：2008-01-25
申请人： Shuji NAKAMURA , Akira FUJIBAYASHI , Mutsumi HOSOYA , Hideaki FUKUDA
发明人： Shuji NAKAMURA , Akira FUJIBAYASHI , Mutsumi HOSOYA , Hideaki FUKUDA
IPC分类号： H04L12/56
CPC分类号： G06F3/0656 , G06F3/061 , G06F3/0635 , G06F3/067 , H04L67/1097
摘要： Deadlock is avoided in a grid storage system having superior scalability. Provided is a storage subsystem connected to a host computer for receiving a write or read access from the host computer. This storage subsystem includes a plurality of modules respectively having a storage resource, a switch for connecting the plurality of modules, a controller for controlling the transfer of a packet based on the write or read access from the host computer to a target module among the plurality of modules via the switch, and a memory storing a transfer rule of the packet. The controller controls the transfer of the packet based on the transfer rule.
摘要翻译：在具有优越可扩展性的网格存储系统中避免了死锁。提供了连接到主计算机的存储子系统，用于从主计算机接收写入或读取访问。该存储子系统包括分别具有存储资源的多个模块，用于连接多个模块的开关，用于基于从主机到多个模块中的目标模块的写入或读取访问来控制分组传送的控制器的模块，以及存储分组的传送规则的存储器。控制器根据传输规则控制数据包的传输。

72. 发明授权

US07518159B2 Packaging technique for the fabrication of polarized light emitting diodes 有权
标题翻译：用于制造偏振发光二极管的封装技术
公开(公告)号：US07518159B2
公开(公告)日：2009-04-14
申请号：US11472186
申请日：2006-06-21
申请人： Hisashi Masui , Shuji Nakamura , Steven P. DenBaars
发明人： Hisashi Masui , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L29/22 , H01L33/00 , H01L21/00
CPC分类号： H01L33/16 , G02F1/133603 , G02F1/13362 , H01L23/544 , H01L33/20 , H01L33/483 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2924/0002 , H01L2924/00
摘要： A polarized light emitting diode (LED) includes a marker indicating a polarization direction. A package for the LED also includes a marker indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to a package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.
摘要翻译：偏振发光二极管（LED）包括指示极化方向的标记。用于LED的封装还包括指示极化方向的标记。 LED和封装上的标记用于相互对准，其中LED以相对于封装的有利取向附接，使得来自封装的发射光的偏振方向是明显的。标记物在芯片分离之前放置在LED上，并且在对准之前将标记物放置在包装上。 LED上的标记包括光刻图案，不对称模具形状，裸片上的凹口或裸片上的划痕，而封装上的标记包括电极形状或图案，非对称封装形状，包装或包装上的划痕。最后，LED或封装可以安装在也指示极化方向的外部电路或系统中。

73. 发明授权

US07504274B2 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition 有权
标题翻译：通过金属有机化学气相沉积制造非极性氮化铟镓薄膜，异质结构和器件
公开(公告)号：US07504274B2
公开(公告)日：2009-03-17
申请号：US11621479
申请日：2007-01-09
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L21/205
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译：制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

74. 发明授权

US07496124B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07496124B2
公开(公告)日：2009-02-24
申请号：US11287339
申请日：2005-11-28
申请人： Tokuya Kozaki , Masahiko Sano , Shuji Nakamura , Shinichi Nagahama
发明人： Tokuya Kozaki , Masahiko Sano , Shuji Nakamura , Shinichi Nagahama
IPC分类号： H01S3/04 , H01S3/14
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2031 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/223 , H01S5/2231 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.
摘要翻译：氮化物半导体激光装置在高输出功率下具有改进的横向模式的稳定性和更长的寿命，使得该装置可以用于写入和读取具有高容量的记录介质的光源。氮化物半导体激光器件依次层叠有有源层，p侧覆层，p侧接触层。该器件还包括通过从p侧接触层蚀刻而形成的条纹结构的波导区域。通过蚀刻提供的条纹宽度在1-3μm的条纹范围内，并且蚀刻深度低于0.1μm的p侧包覆层的厚度和活性层上方。特别是，当p侧光波导层包括条形结构的突出部分和突起部分上的p型氮化物半导体层和p侧光波导层的突出部分的厚度不大于1 妈妈，远景图像的纵横比得到改善。此外，p侧光波导层的厚度大于n侧光波导层的厚度。

75. 发明申请

US20090001399A1 OPTICAL DESIGNS FOR HIGH-EFFICACY WHITE-LIGHT EMITTING DIODES 有权
标题翻译：用于高效白光发光二极管的光学设计
公开(公告)号：US20090001399A1
公开(公告)日：2009-01-01
申请号：US12163510
申请日：2008-06-27
申请人： Frederic S. Diana , Steven P. DenBaars , Shuji Nakamura
发明人： Frederic S. Diana , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , F21K9/64 , H01L33/32 , H01L33/46 , H01L33/483 , H01L33/50 , H01L33/504 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/45144 , H01L2224/48091 , H01L2924/19107 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014 , H01L2924/00
摘要： A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.
摘要翻译：一种用于增加白光发光二极管（WLED）的发光效率的方法，包括在LED管芯和荧光体之间以及在所述荧光体和外部介质之间引入光学功能界面，其中所述荧光体和 LED管芯提供对由荧光体远离外部介质发出的光的反射率以及由LED管芯发射的光的透射率。因此，WLED可以包括围绕LED管芯，荧光体层以及放置在荧光体层和第一材料之间的用于直接LED发射和反射用于荧光体发射的透明的至少一个附加层或材料的第一材料其围绕LED管芯。

76. 发明申请

US20080295102A1 COMPUTING SYSTEM, METHOD OF CONTROLLING THE SAME, AND SYSTEM MANAGEMENT UNIT 有权
标题翻译：计算机系统，其控制方法和系统管理单元
公开(公告)号：US20080295102A1
公开(公告)日：2008-11-27
申请号：US12039289
申请日：2008-02-28
申请人： Hirotoshi Akaike , Kazuhisa Fujimoto , Shuji Nakamura
发明人： Hirotoshi Akaike , Kazuhisa Fujimoto , Shuji Nakamura
IPC分类号： G06F9/46 , G06F15/16
CPC分类号： G06F3/0649 , G06F3/061 , G06F3/0665 , G06F3/0685 , G06F17/30221
摘要： A computing system includes a plurality of computing units, a tiered storage unit including a first storage medium and a second storage medium having a transfer rate lower than that of the first storage medium, and connected to a plurality of the computing units; and a system management unit connected to a plurality of the computing units and the tiered storage unit. The system management unit creates a computation job execution schedule for a plurality of the computing units or obtains the computation job execution schedule from other unit in the computing system, plans a data migration in the tiered storage unit according to the execution schedule using a predetermined method, and instructs the tiered storage unit to migrate a data based on the plan.
摘要翻译：计算系统包括多个计算单元，分层存储单元，包括第一存储介质和第二存储介质，传输速率低于第一存储介质的传输速率，并连接到多个计算单元; 以及连接到多个计算单元和分层存储单元的系统管理单元。系统管理单元为多个计算单元创建计算作业执行调度，或从计算系统中的其他单元获取计算作业执行调度，使用预定方法根据执行调度来计划分层存储单元中的数据迁移，并指示分层存储单元根据计划迁移数据。

77. 发明申请

US20080237012A1 KEYBOARD 有权
标题翻译：键盘
公开(公告)号：US20080237012A1
公开(公告)日：2008-10-02
申请号：US12058379
申请日：2008-03-28
申请人： Tamotsu Koike , Shuji Nakamura , Junichi Maruyama
发明人： Tamotsu Koike , Shuji Nakamura , Junichi Maruyama
IPC分类号： H01H13/70 , H01H9/00
CPC分类号： H01H3/125 , H01H2217/012 , H01H2221/036 , H01H2221/07 , H01H2223/003 , H01H2223/034
摘要： The keyboard includes a rubber sheet fixed on key tops of a set of key-switch devices. The rubber sheet elastically urges the key tops upward so that they are borne away from the base of the key-switch devices. The rubber sheet is arranged so as to cover the key-switch devices from outside. According to the invention, the cost of a keyboard covered with a dustproof and watertight rubber sheet can be reduced.
摘要翻译：键盘包括固定在一组钥匙开关装置的键顶上的橡胶片。橡胶片弹性地将键顶向上推动，使得它们远离键开关装置的基座。橡胶片被布置成从外部覆盖钥匙开关装置。根据本发明，可以减少覆盖有防尘和防水橡胶片的键盘的成本。

78. 发明申请

US20080229003A1 STORAGE SYSTEM AND METHOD OF PREVENTING DETERIORATION OF WRITE PERFORMANCE IN STORAGE SYSTEM 失效
标题翻译：存储系统和防止存储系统写入性能检测的方法
公开(公告)号：US20080229003A1
公开(公告)日：2008-09-18
申请号：US11968218
申请日：2008-01-02
申请人： Nagamasa MIZUSHIMA , Shuji Nakamura
发明人： Nagamasa MIZUSHIMA , Shuji Nakamura
IPC分类号： G06F12/02
CPC分类号： G06F12/0804 , G06F12/0246 , G06F2212/1032 , G06F2212/2022 , G06F2212/7205
摘要： Provided is a storage system capable of inhibiting the deterioration of its write performance. This storage system includes a flash memory, a cache memory, and a controller for controlling the reading, writing and deletion of data of the flash memory and the reading and writing of data of the cache memory, and detecting the generation of a defective block in the flash memory. When the controller detects the generation of a defective block in the flash memory, it migrates prescribed data stored in the flash memory to the cache memory and, even upon receiving from the host computer a command for updating the migrated data, disables the writing of data in the flash memory based on the command.
摘要翻译：提供了能够抑制其写入性能劣化的存储系统。该存储系统包括闪速存储器，高速缓存存储器和用于控制闪速存储器的数据的读取，写入和删除以及高速缓冲存储器的数据的读取和写入的控制器，并且检测有缺陷块的生成闪存。当控制器检测到闪存中的故障块的产生时，它将存储在闪速存储器中的规定数据迁移到高速缓冲存储器，并且即使在从主计算机接收到用于更新迁移的数据的命令时，禁止写入数据在闪存中基于命令。

79. 发明申请

US20080198881A1 OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS 有权
标题翻译：激光棒取向非极性和半导体（Ga，Al，In，B）N二极体激光器的优化
公开(公告)号：US20080198881A1
公开(公告)日：2008-08-21
申请号：US12030124
申请日：2008-02-12
申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01S5/06
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/10 , H01S5/20 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
摘要翻译：非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。

80. 发明申请

US20080191192A1 Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES 有权
标题翻译： Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管
公开(公告)号：US20080191192A1
公开(公告)日：2008-08-14
申请号：US12030117
申请日：2008-02-12
申请人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译：一种用于制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

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