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71. 发明授权

US06900483B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06900483B2
公开(公告)日：2005-05-31
申请号：US10162503
申请日：2002-06-04
申请人： Masao Uchida , Makoto Kitabatake , Toshiya Yokogawa , Osamu Kusumoto , Kunimasa Takahashi , Ryoko Miyanaga , Kenya Yamashita
发明人： Masao Uchida , Makoto Kitabatake , Toshiya Yokogawa , Osamu Kusumoto , Kunimasa Takahashi , Ryoko Miyanaga , Kenya Yamashita
IPC分类号： H01L21/329 , H01L29/24 , H01L29/872 , H01L29/80
CPC分类号： H01L29/66143 , H01L29/1608 , H01L29/872
摘要： A Schottky diode includes a semiconductor substrate made of 4H—SiC, an epitaxially grown 4H—SiC layer, an ion implantation layer, a Schottky electrode, an ohmic electrode, and an insulative layer made of a thermal oxide film. The Schottky electrode and the insulative layer are not in contact with each other, with a gap being provided therebetween, whereby an altered layer does not occur. Therefore, it is possible to suppress the occurrence of a leak current.
摘要翻译：肖特基二极管包括由4H-SiC制成的半导体衬底，外延生长的4H-SiC层，离子注入层，肖特基电极，欧姆电极和由热氧化膜制成的绝缘层。肖特基电极和绝缘层彼此不接触，其间设置有间隙，由此不发生改变的层。因此，可以抑制泄漏电流的发生。

72. 发明申请

US20050077569A1 Silicon carbide-oxide layered structure, production method thereof, and semiconductor device 有权
标题翻译：碳化硅 - 氧化物层状结构体及其制造方法以及半导体装置
公开(公告)号：US20050077569A1
公开(公告)日：2005-04-14
申请号：US10956078
申请日：2004-10-04
申请人： Kenya Yamashita , Makoto Kitabatake , Osamu Kusumoto , Kunimasa Takahashi , Masao Uchida , Ryoko Miyanaga
发明人： Kenya Yamashita , Makoto Kitabatake , Osamu Kusumoto , Kunimasa Takahashi , Masao Uchida , Ryoko Miyanaga
IPC分类号： H01L21/04 , H01L29/24 , H01L29/417 , H01L29/51 , H01L29/78 , H01L29/15
CPC分类号： H01L29/518 , H01L21/049 , H01L29/1608 , H01L29/41766 , H01L29/513 , H01L29/66068 , H01L29/7827 , H01L29/7828
摘要： A gate insulating film which is an oxide layer mainly made of SiO2 is formed over a silicon carbide substrate by thermal oxidation, and then, a resultant structure is annealed in an inert gas atmosphere in a chamber. Thereafter, the silicon carbide-oxide layered structure is placed in a chamber which has a vacuum pump and exposed to a reduced pressure NO gas atmosphere at a high temperature higher than 1100° C. and lower than 1250° C., whereby nitrogen is diffused in the gate insulating film. As a result, a gate insulating film which is a V-group element containing oxide layer, the lower part of which includes a high nitrogen concentration region, and the relative dielectric constant of which is 3.0 or higher, is obtained. The interface state density of an interface region between the V-group element containing oxide layer and the silicon carbide layer decreases.
摘要翻译：通过热氧化在碳化硅衬底上形成作为主要由SiO 2形成的氧化物层的栅极绝缘膜，然后将所得结构在室内的惰性气体气氛中退火。然后，将碳化硅 - 氧化物层叠体置于具有真空泵的室内，在高于1100℃且低于1250℃的高温下暴露于减压NO气体气氛中，由此氮气扩散在栅极绝缘膜上。结果，获得了包含氧化物层的V族元素的栅绝缘膜，其下部包括高氮浓度区域，并且其相对介电常数为3.0或更高。含V族元素的氧化物层和碳化硅层之间的界面区域的界面态密度降低。

73. 发明授权

US06654604B2 Equipment for communication system 有权
标题翻译：通讯系统设备
公开(公告)号：US06654604B2
公开(公告)日：2003-11-25
申请号：US09989270
申请日：2001-11-20
申请人： Toshiya Yokogawa , Kunimasa Takahashi , Masao Uchida , Makoto Kitabatake , Osamu Kusumoto
发明人： Toshiya Yokogawa , Kunimasa Takahashi , Masao Uchida , Makoto Kitabatake , Osamu Kusumoto
IPC分类号： H04Q720
CPC分类号： H03F3/601 , H01L21/8213 , H01L27/0605 , H01L29/105 , H01L29/157 , H01L29/1608 , H01L29/365 , H01L29/7725 , H01L29/812 , H01L29/872 , H03D7/125 , H03F2200/294
摘要： Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of &dgr;-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of &dgr;-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the &dgr;-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.
摘要翻译：用于通信系统的设备具有通过将肖特基二极管，MOSFET，电容器和电感器集成在SiC衬底中而形成的半导体器件。 SiC衬底具有依次向上设置的第一多层部分和第二多层部分。第一多层部分由各自含有高浓度的n型杂质（氮）和交替层叠的未掺杂层的δ掺杂层组成。第二多层部分由各自含有高浓度的p型杂质（铝）和交替层叠的未掺杂层的δ掺杂层组成。 δ掺杂层中的载体广泛扩展到未掺杂的层。由于每个未掺杂的层中的杂质浓度低，所以杂质离子的散射被降低，从而获得低的电阻和高的击穿电压。

74. 发明授权

US06577386B2 Method and apparatus for activating semiconductor impurities 失效
标题翻译：激活半导体杂质的方法和装置
公开(公告)号：US06577386B2
公开(公告)日：2003-06-10
申请号：US09852656
申请日：2001-05-11
申请人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
发明人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
IPC分类号： H01L21263
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要翻译：用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。

75. 发明授权

US6008502A Diamond electron emitting device having an insulative electron supply layer 失效
标题翻译：具有绝缘电子供应层的金刚石电子发射器件
公开(公告)号：US6008502A
公开(公告)日：1999-12-28
申请号：US945877
申请日：1997-11-03
申请人： Masahiro Deguchi , Akio Hiraki , Toshimichi Ito , Akimitsu Hatta , Nobuhiro Eimori , Makoto Kitabatake
发明人： Masahiro Deguchi , Akio Hiraki , Toshimichi Ito , Akimitsu Hatta , Nobuhiro Eimori , Makoto Kitabatake
IPC分类号： H01J1/312 , H01L29/06 , H01L29/12
CPC分类号： B82Y10/00 , H01J1/312 , H01J2201/30457
摘要： The present invention provides an electron emitting device for efficiently emitting electron beams by applying a forward bias to an MIS, pn, and a pin structure using a diamond layer so as to supply electrons from an electron supply layer to a p-type diamond layer. Furthermore, the present invention provides a method for easily and efficiently performing important production processes for producing a highly efficient electron emitting device having a diamond layer and controlling a surface state of the diamond layer. A multi-layer structure including an electrode layer, an electron supply layer and a diamond layer is used as the structure thereof. Alternatively, the electron affinity state of the surface of the diamond layer is arbitrarily controlled by a method such as ultraviolet ray irradiation.
摘要翻译： PCT No.PCT / JP97 / 01031 Sec。 371日期：1997年11月3日 102（e）日期1997年11月3日PCT 1997年3月26日PCT公布。公开号WO97 / 36309 日期1997年10月2日本发明提供了一种电子发射器件，用于通过使用金刚石层向MIS，pn和引脚结构施加正向偏压来有效地发射电子束，以便将电子从电子供给层提供给p 型金刚石层。此外，本发明提供了一种方法，用于容易且有效地执行用于制造具有金刚石层并控制金刚石层的表面状态的高效电子发射器件的重要生产方法。使用包括电极层，电子供给层和金刚石层的多层结构作为其结构。或者，通过紫外线照射等方法任意地控制金刚石层的表面的电子亲合性。

76. 发明授权

US4877677A Wear-protected device 失效
标题翻译：受磨损的设备
公开(公告)号：US4877677A
公开(公告)日：1989-10-31
申请号：US830085
申请日：1986-02-18
申请人： Kumiko Hirochi , Makoto Kitabatake , Osamu Yamazaki
发明人： Kumiko Hirochi , Makoto Kitabatake , Osamu Yamazaki
IPC分类号： C23C14/06 , C23C14/46
CPC分类号： C23C14/46 , C23C14/0623 , Y10T428/24975 , Y10T428/30 , Y10T428/31678 , Y10T428/31935
摘要： A hard carbon film (12) is formed by ion-beam sputtering on a surface of a substrate (11) such as glass lens or metal sheet of a magnetic disk or a plastic film of a magnetic video tape, by selecting the direction of the ion-beam in the sputtering process to be parallel with surface of the substrate (11) of a magnetic disk, and subsequently theroen a lubricative film (13), such as ZnS.sub.2 is formed also by ion-beam sputtering.
摘要翻译：通过离子束溅射在诸如玻璃透镜或磁盘的金属片或磁性录像带的塑料膜的表面上形成硬碳膜（12），通过选择方向溅射过程中的离子束与磁盘的基板（11）的表面平行，随后也通过离子束溅射形成诸如ZnS 2的润滑膜（13）。

77. 发明申请

US20130021831A1 INVERTER 有权
标题翻译：逆变器
公开(公告)号：US20130021831A1
公开(公告)日：2013-01-24
申请号：US13639182
申请日：2011-10-28
申请人： Makoto Kitabatake , Shun Kazama
发明人： Makoto Kitabatake , Shun Kazama
IPC分类号： H02M7/538
CPC分类号： H02M7/5387 , H01L29/1608 , H01L29/66068 , H01L29/7806 , H01L29/7828 , H02M7/003
摘要： An inverter comprising: a circuit including arms connected in parallel, each of the arms including a first switch and a second switch connected in series; and a gate drive circuit configured to control, by pulse-width modulation using synchronous rectification, each of the first switch and the second switch to switch to an on-state or an off-state, wherein each of the first switch and the second switch includes: a channel region that is conductive in both a forward direction and a reverse direction in the on-state, and that is not conductive in the forward direction in the off-state; and a diode region that is combined as one with the channel region, and that is conductive only in the reverse direction, the diode region being unipolar, and the gate drive circuit synchronizes a timing at which the gate drive circuit outputs a signal for causing the first switch to switch to the on-state with a timing at which the gate drive circuit outputs a signal for causing the second switch to switch to the off-state, and synchronizes a timing at which the gate drive circuit outputs a signal for causing the first switch to switch to the off-state with a timing at which the gate drive circuit outputs a signal for causing the second switch to switch to the on-state.
摘要翻译：一种逆变器，包括：包括并联连接的臂的电路，每个臂包括串联连接的第一开关和第二开关; 以及栅极驱动电路，被配置为通过使用同步整流的脉冲宽度调制来控制第一开关和第二开关中的每一个以切换到导通状态或截止状态，其中第一开关和第二开关包括：在导通状态下在正向和反向都是导通的沟道区，并且在截止状态下在正向上不导通; 以及二极管区域，其与沟道区域一体化，并且仅在相反方向上导通，二极管区域是单极的，并且栅极驱动电路同步门驱动电路输出信号的定时，第一开关切换到导通状态，栅极驱动电路输出用于使第二开关切换到截止状态的信号的定时，并且使门驱动电路输出用于使第一开关以栅极驱动电路输出用于使第二开关切换到导通状态的信号的定时切换到断开状态。

78. 发明授权

US08350549B2 Converter with switches having a diode region that is unipolar-conductive only in the reverse direction 有权
标题翻译：具有仅在相反方向上具有单极性导通的二极管区域的开关的转换器
公开(公告)号：US08350549B2
公开(公告)日：2013-01-08
申请号：US13510412
申请日：2011-10-28
申请人： Makoto Kitabatake
发明人： Makoto Kitabatake
IPC分类号： G05F1/44 , G05F1/618
CPC分类号： H01L27/088 , H01L27/0727 , H01L29/1608 , H01L29/66068 , H01L29/7806 , H01L29/7828 , H02M3/1588 , Y02B70/1466
摘要： A converter utilizing synchronous rectification comprises a first switch, a second switch connected in series to the first switch, and a gate drive circuit controlling each switch to switch to on/off-state using pulse-width modulation. Each switch includes a channel region that is conductive in both forward and reverse directions in on-state and is not conductive in the forward direction in off-state, and a unipolar diode region conductive only in the reverse direction. The gate drive circuit synchronizes output timing for signal with which the first switch switches to on-state with output timing for signal with which the second switch switches to off-state, and synchronizes output timing for signal with which the first switch switches to off-state with output timing for signal with which the second switch switches to on-state.
摘要翻译：利用同步整流的A转换器包括第一开关，与第一开关串联连接的第二开关，以及栅极驱动电路，其通过脉冲宽度调制来控制每个开关切换到导通/截止状态。每个开关包括导通状态的正向和反向导通的沟道区，并且在截止状态下在正向不导通，并且单极二极管区仅在相反方向上导通。栅极驱动电路使第一开关切换到导通状态的信号的输出定时与第二开关切换到截止状态的信号的输出定时同步，并且使与第一开关切换到断开状态的信号的输出定时同步，状态，其中第二开关切换到导通状态的信号的输出定时。

79. 发明申请

US20120236615A1 CONVERTER 有权
标题翻译：转换器
公开(公告)号：US20120236615A1
公开(公告)日：2012-09-20
申请号：US13510412
申请日：2011-10-28
申请人： Makoto Kitabatake
发明人： Makoto Kitabatake
IPC分类号： H02M7/537
CPC分类号： H01L27/088 , H01L27/0727 , H01L29/1608 , H01L29/66068 , H01L29/7806 , H01L29/7828 , H02M3/1588 , Y02B70/1466
摘要： A converter utilizing synchronous rectification comprises a first switch, a second switch connected in series to the first switch, and a gate drive circuit controlling each switch to switch to on/off-state using pulse-width modulation. Each switch includes a channel region that is conductive in both forward and reverse directions in on-state and is not conductive in the forward direction in off-state, and a unipolar diode region conductive only in the reverse direction. The gate drive circuit synchronizes output timing for signal with which the first switch switches to on-state with output timing for signal with which the second switch switches to off-state, and synchronizes output timing for signal with which the first switch switches to off-state with output timing for signal with which the second switch switches to on-state.
摘要翻译：利用同步整流的A转换器包括第一开关，与第一开关串联连接的第二开关，以及栅极驱动电路，其通过脉冲宽度调制来控制每个开关切换到导通/截止状态。每个开关包括导通状态的正向和反向导通的沟道区，并且在截止状态下在正向不导通，并且单极二极管区仅在相反方向上导通。栅极驱动电路使第一开关切换到导通状态的信号的输出定时与第二开关切换到截止状态的信号的输出定时同步，并且使与第一开关切换到断开状态的信号的输出定时同步，状态，其中第二开关切换到导通状态的信号的输出定时。

80. 发明申请

US20110168697A1 ELECTRIC POWER CONVERTING APPARATUS AND INDUCTION HEATING APPARATUS 有权
标题翻译：电力转换装置和感应加热装置
公开(公告)号：US20110168697A1
公开(公告)日：2011-07-14
申请号：US13062302
申请日：2010-07-30
申请人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
发明人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
IPC分类号： H05B6/04 , H02M7/44
CPC分类号： H05B6/062 , H02M1/14 , H05B6/04
摘要： To aim to reduce ripple current flowing through a capacitor in a power converter apparatus including a converter, the capacitor and an inverter. A current sensor 6 is connected between a capacitor 5 and an inverter circuit 7 for detecting current Iinv flowing from the capacitor 5 to the inverter circuit 7. A frequency detecting subunit 11 performs fast Fourier transform on a waveform of the current Iinv to detect a frequency of a frequency component having the largest amplitude. Also, the frequency detecting subunit 12 detects a zero-cross point of the frequency component having the largest amplitude. Then a carrier signal control subunit 13 performs control such that a frequency and a rise time of a PWM carrier signal for driving the converter circuit 4 match the frequency and the zero-cross point that have been detected by the frequency detecting subunit 11 and the phase detecting subunit 12.
摘要翻译：旨在减少在包括转换器，电容器和逆变器的功率转换器装置中流过电容器的纹波电流。电流传感器6连接在电容器5和逆变器电路7之间，用于检测从电容器5流向逆变器电路7的电流Iinv。频率检测子单元11对电流Iinv的波形执行快速傅里叶变换，以检测频率具有最大振幅的频率分量。此外，频率检测子单元12检测具有最大振幅的频率分量的零交叉点。然后，载波信号控制子单元13执行控制，使得用于驱动转换器电路4的PWM载波信号的频率和上升时间与由频率检测子单元11检测到的频率和零交叉点相匹配，检测子单元12。

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