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71. 发明申请

WO2009140153A2 APPARATUS FOR ETCHING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于蚀刻半导体波长的装置
公开(公告)号：WO2009140153A2
公开(公告)日：2009-11-19
申请号：PCT/US2009/043261
申请日：2009-05-08
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , TAN, Tien, Fak , TSUEI, Lun
发明人： LUBOMIRSKY, Dmitry , TAN, Tien, Fak , TSUEI, Lun
IPC分类号： H01L21/683 , H01L21/687 , H01L21/3065 , H01L21/205
CPC分类号： H01L21/67126 , H01L21/6838 , Y10T279/23
摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
摘要翻译：提供半导体装置的晶片基座。晶片基座能够支撑基板。晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将基板夹在基座上。基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。密封带构造成支撑基底。

72. 发明申请

WO2009131889A3 METHOD AND APPARATUS FOR EXCIMER CURING 审中-公开
公开(公告)号：WO2009131889A3
公开(公告)日：2009-10-29
申请号：PCT/US2009/040809
申请日：2009-04-16
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , RASHEED, Muhammad, M. , YIEH, Ellie, Y.
发明人： LUBOMIRSKY, Dmitry , RASHEED, Muhammad, M. , YIEH, Ellie, Y.
IPC分类号： H01L21/324 , H01L21/205
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.

73. 发明申请

WO2007149991A3 DIELECTRIC DEPOSITION AND ETCH BACK PROCESSES FOR BOTTOM UP GAPFILL 审中-公开
标题翻译：用于底盖的介电沉积和回填工艺
公开(公告)号：WO2007149991A3
公开(公告)日：2008-05-08
申请号：PCT/US2007071804
申请日：2007-06-21
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , NEMANI SRINIVAS D , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , NEMANI SRINIVAS D , YIEH ELLIE
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.
摘要翻译：描述了减少电介质层中的膜破裂的方法。所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

74. 发明申请

WO2007140426A2 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140426A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/070001
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括位于衬底台上方的双通道喷头。喷头可以具有面板，其具有第一组开口，反应性自由基前体通过该开口进入沉积室，以及第二组开口，第二介电体前体通过该开口进入沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

75. 发明申请

WO2007016218A2 INTEGRATED ELECTROLESS DEPOSITION SYSTEM 审中-公开
标题翻译：集成电沉积系统
公开(公告)号：WO2007016218A2
公开(公告)日：2007-02-08
申请号：PCT/US2006029137
申请日：2006-07-28
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , D AMBRA ALLEN , WEIDMAN TIMOTHY W , STEWART MICHAEL P , RABINOVICH EUGENE , SHERMAN SVETLANA , BIRANG MANOOCHER , WANG YAXIN , YANG MICHAEL X , HANSEN BRADLEY
发明人： LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , D AMBRA ALLEN , WEIDMAN TIMOTHY W , STEWART MICHAEL P , RABINOVICH EUGENE , SHERMAN SVETLANA , BIRANG MANOOCHER , WANG YAXIN , YANG MICHAEL X , HANSEN BRADLEY
IPC分类号： G09G3/00 , C23C16/00 , H05H1/24
CPC分类号： H01L21/6723 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/1685 , C23C18/1689 , C23C18/1889 , C25D7/123 , H01L21/67046 , H01L21/67051 , H01L21/67109
摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Embodiments further provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed.
摘要翻译：本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。一个实施例提供了一种在衬底互连上形成覆盖层的方法。实施例还提供了一种集群工具，其被配置为通过使用一个或多个无电镀，CVD和/或ALD处理室将材料沉积到衬底表面上。一方面，形成含钌催化剂层。

76. 发明申请

WO2004094702A3 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A3
公开(公告)日：2006-11-30
申请号：PCT/US2004012012
申请日：2004-04-16
申请人： APPLIED MATERIALS INC , YANG MICHAEL X , XI MING , ELLWANGER RUSSELL C , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
发明人： YANG MICHAEL X , XI MING , ELLWANGER RUSSELL C , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
IPC分类号： C25D7/12 , B08B3/02 , C25D5/00 , C25D17/00 , C25D17/02 , C25D19/00 , C25D21/00 , C25D21/08 , H01L21/00 , H01L21/68 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主框架上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

77. 发明申请

WO2005028717A1 INSOLUBLE ANODE WITH AN AUXILIARY ELECTRODE 审中-公开
标题翻译：具有辅助电极的不溶性阳极
公开(公告)号：WO2005028717A1
公开(公告)日：2005-03-31
申请号：PCT/US2004/030445
申请日：2004-09-17
申请人： APPLIED MATERIALS, INC. , KOVARSKY, Nicolay, Y. , LUBOMIRSKY, Dmitry , RABINOVICH, Yevgeniy (Eugene)
发明人： KOVARSKY, Nicolay, Y. , LUBOMIRSKY, Dmitry , RABINOVICH, Yevgeniy (Eugene)
IPC分类号： C25D3/38
CPC分类号： C25D17/12 , B01D61/44 , B01D71/36 , C25D7/123 , C25D17/001 , C25D17/10 , C25D21/12
摘要： A method and apparatus for plating a metal onto a substrate. The apparatus includes a fluid basin configured to contain a plating solution, an anode fluid volume positioned in a lower portion of the fluid basin, a cathode fluid volume positioned in an upper portion of the fluid basin, an ionic membrane positioned to separate the anode fluid volume from the cathode fluid volume, a plating electrode centrally positioned in the anode fluid volume, and a deplating electrode positioned adjacent the plating electrode in the anode fluid volume.
摘要翻译：一种用于将金属电镀到基底上的方法和装置。该装置包括流体池，其构造成容纳电镀溶液，位于流体槽的下部的阳极流体体积，位于流体池的上部的阴极流体体积，定位成将阳极流体分离的离子膜来自阴极流体体积的体积，位于阳极流体体积中间的电镀电极，以及位于阳极流体体积内的电镀电极附近的脱镀电极。

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