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    • 71. 发明申请
    • Wind-driven power generation device for electric vehicle
    • 电动汽车风力发电装置
    • US20060278445A1
    • 2006-12-14
    • US11149250
    • 2005-06-10
    • Kung-Cheng Chang
    • Kung-Cheng Chang
    • B60M1/00
    • B60L8/006Y02T10/7083
    • A wind-driven power generation device for an electric vehicle comprising a wind-driven power generation modules, a rectifier and an electronic switch. The wind-driven power generation module is installed inside the body of the electric vehicle and includes a flat body shell, multiple air channels and multiple small wind-driven power generators installed inside the air channels. When the electric vehicle is moving, an air current moving through the multiple air channels activates the multiple small wind-driven power generators to generate power. The generated electrical power will flow through the rectifier and the electronic switch to be supplied to the electric engine module of the electric vehicle. When the power supplied by the wind-driven power generation module is insufficient, it will be supplemented by power of a battery set. When the power generated by the wind-driven power generation module is too much, the additional power can be used to charge the battery set.
    • 一种用于电动车辆的风力发电装置,包括风力发电模块,整流器和电子开关。 风力发电模块安装在电动车体的内部,包括安装在空气通道内的扁平壳体,多个空气通道和多个小型风力发电机组。 当电动车辆移动时,通过多个空气通道的气流激活多个小型风力发电机以产生动力。 所产生的电力将流过整流器和电子开关以供应到电动车辆的电动发动机模块。 当由风力发电模块供电的电力不足时,电池组的功率将被补充。 当风力发电模块产生的电力太多时,可以使用附加功率来对电池组进行充电。
    • 72. 发明授权
    • Method and system for measuring audio and video synchronization error of audio/video encoder system and analyzing tool thereof
    • 用于测量音频/视频编码器系统的音视频同步误差的方法和系统及其分析工具
    • US06912011B2
    • 2005-06-28
    • US10187106
    • 2002-06-28
    • Kung Cheng
    • Kung Cheng
    • H04N5/04H04N7/52H04N7/62H04N17/00H04N9/475
    • H04N17/004H04N5/04
    • A method for measuring audio and video synchronization error of an audio/video encoder system is provided. The method includes steps of: producing a reference video data having a first time length and including a particular image pattern and a reference audio data having a second time length; inputting the reference video data and the reference audio data into the audio/video encoder system to produce an encoded video data and an encoded audio data; processing the encoded video data and the encoded audio data respectively to produce a detected video data having the first time length and including the particular image pattern and a detected audio data having the second time length; and detecting a first time point of an audio data of the reference audio data synchronized with the particular image pattern of the reference video data and a second time point of an audio data of the detected audio data synchronized with the particular image pattern of the detected video data by an analyzing tool, and calculating a difference between the first time point and the second time point.
    • 提供了一种用于测量音频/视频编码器系统的音频和视频同步错误的方法。 该方法包括以下步骤:产生具有第一时间长度并包括特定图像图案的参考视频数据和具有第二时间长度的参考音频数据; 将参考视频数据和参考音频数据输入到音频/视频编码器系统中以产生编码视频数据和编码音频数据; 分别处理编码视频数据和编码音频数据以产生具有第一时间长度并包括特定图像图案的检测视频数据和具有第二时间长度的检测到的音频数据; 并且检测与参考视频数据的特定图像图案同步的参考音频数据的音频数据的第一时间点和与检测到的视频的特定图像模式同步的检测到的音频数据的音频数据的第二时间点 数据,并且计算第一时间点和第二时间点之间的差异。
    • 74. 发明申请
    • Batch order change system
    • 批次更改系统
    • US20050065627A1
    • 2005-03-24
    • US10667447
    • 2003-09-23
    • Kung-Cheng TuYu-Chen ChuangYa-Ping Yeh
    • Kung-Cheng TuYu-Chen ChuangYa-Ping Yeh
    • G06F19/00G06Q10/00
    • G06Q10/10
    • A system for manufacturing a plurality of products that comprises a plurality of product attributes respectively corresponding to the products, a first text file including a plurality of amendment entries for amending the product attributes, an agent reading the first text file and the amendment entries, a scheduling subsystem respectively amending the product attributes according to the amendment entries and determining whether any of the amendment entries fails, and a second text file collecting the failed amendment entries, wherein the agent resends the second text file and the collected failed amendment entries to the scheduling subsystem for further amending the product attributes according to the collected failed amendment entries.
    • 一种用于制造多个产品的系统,包括分别对应于产品的多个产品属性,包括用于修改产品属性的多个修改条目的第一文本文件,读取第一文本文件和修改条目的代理, 调度子系统分别根据修改条目修改产品属性,并确定是否有任何修改条目失败;以及第二文本文件收集失败的修改条目,其中代理将第二文本文件和收集的失败的修改条目重新发送到调度 子系统根据收集的失败修正条目进一步修改产品属性。
    • 76. 发明授权
    • Anti-inclination and internal locking device for a cabinet
    • 防倾斜和内部锁定装置
    • US06742854B2
    • 2004-06-01
    • US10244160
    • 2002-09-16
    • Kung Cheng Chen
    • Kung Cheng Chen
    • E05B6546
    • E05B65/463
    • Anti-inclination and internal locking device for a cabinet, including a cabinet body, at least two drawers disposed in the cabinet body, a projecting body disposed on rear side of each drawer, a base seat fixedly disposed on inner side of a rear wall board of the cabinet body corresponding to each drawer, a slide seat slidably fitted in the base seat and movable between a first position and a second position and a first and a second connecting sections respectively disposed at one end of the base seat and one end of the slide seat. The projecting body has an activating section and a stop section. The slide seat is formed with an opening corresponding to the projecting body. After one drawer is drawn out, the activating section of the projecting body of the drawn out drawer drives the slide seat and then the first connecting section is connected with the second connecting section to make the slide seat positioned in the first position, whereby the stop section of the projecting body of the other drawer is engaged with the corresponding opening.
    • 用于柜体的防倾斜和内部锁定装置,包括柜体,设置在柜体中的至少两个抽屉,设置在每个抽屉的后侧的突出体,固定地设置在后壁板的内侧的基座 对应于每个抽屉的机壳主体,可滑动地装配在基座中并可在第一位置和第二位置之间移动的滑动座,以及分别设置在基座的一端和第一和第二连接部 滑座 突出体具有激活部分和停止部分。 滑动座形成有与突出体对应的开口。 在抽出一个抽屉之后,拉出抽屉的突出体的启动部分驱动滑动座,然后第一连接部与第二连接部连接,以使滑动座位于第一位置,由此停止 另一个抽屉的突出体的部分与相应的开口接合。
    • 77. 发明授权
    • Structure for firmly resting tools thereon
    • 用于在其上牢固固定工具的结构
    • US06575313B1
    • 2003-06-10
    • US10083106
    • 2002-02-27
    • Kung Cheng Chen
    • Kung Cheng Chen
    • A47F700
    • B25H3/02B25H3/06Y10S211/01
    • Structure for firmly resting tools thereon, including a base board, a magnetic section and at least one insertion key. The base board is formed with multiple insertion holes arranged at predetermined intervals. The magnetic section is laid on the base board. The insertion key can be inserted into the insertion hole. Various tools with different configurations can be rested on the base board and the insertion keys can be inserted into the insertion holes around the tools to elastically locate the tools. In addition, the magnetic section is able to attract iron-made tools to more firmly rest the tools on the base board.
    • 用于在其上牢固地搁置工具的结构,包括基板,磁性部分和至少一个插入键。 基板形成有以预定间隔布置的多个插入孔。 磁性部分铺设在基板上。 插入键可插入插入孔。 具有不同配置的各种工具可以放置在基板上,并且插入键可以插入到工具周围的插入孔中以弹性定位工具。 此外,磁性部分能够吸引铁制工具以更牢固地将工具放置在基板上。
    • 78. 发明授权
    • Ar-based si-rich oxynitride film for dual damascene and/or contact etch stop layer
    • 用于双镶嵌和/或接触蚀刻停止层的基于Ar的富Si氧氮化物膜
    • US06235653B1
    • 2001-05-22
    • US09324924
    • 1999-06-04
    • Hung-Ju ChienYuan-Hung ChiuWen-Kung ChengYin-Lang Wang
    • Hung-Ju ChienYuan-Hung ChiuWen-Kung ChengYin-Lang Wang
    • H01L2131
    • H01L21/76829H01L21/3145H01L21/76807
    • A new method of forming a plasma-enhanced silicon-rich oxynitride layer having improved uniformity across the wafer in terms of layer thickness, refractivity, and reflectivity by using argon as the inert carrier gas is described. A semiconductor substrate is provided which may include semiconductor device structures. An Argon-based silicon-rich oxynitride etch stop layer is deposited overlying the semiconductor substrate. An oxide layer is deposited overlying the Argon-based silicon-rich oxynitride etch stop layer. An opening is etched through the oxide layer stopping at the Argon-based silicon-rich oxynitride etch stop layer. Thereafter, the Argon-based silicon-rich oxynitride etch stop layer within the opening is removed. The opening is filled with a conducting layer. This Argon-based silicon-rich oxynitride layer has improved uniformity across the wafer in terms of layer thickness, refractivity, and reflectivity as compared with a helium-based silicon-rich oxynitride layer.
    • 描述了通过使用氩作为惰性载气,在层厚度,折射率和反射率方面形成了具有改善的晶片均匀性的等离子体增强的富硅氧氮化物层的新方法。 提供一种可包括半导体器件结构的半导体衬底。 沉积在半导体衬底上的基于氩的富硅氧氮化物蚀刻停止层。 覆盖基于氩的富硅氧氮化物蚀刻停止层上的氧化物层。 蚀刻通过在氩基富硅氧氮化物蚀刻停止层处停止的氧化物层的开口。 此后,除去开口内的基于氩的富硅氧氮化物蚀刻停止层。 开口填充有导电层。 与基于氦的富硅氧氮化物层相比,这种基于氩的富硅氧氮化物层在层厚度,折射率和反射率方面具有改善整个晶片的均匀性。
    • 79. 发明授权
    • Methods to improve copper-fluorinated silica glass interconnects
    • 改善铜氟化石英玻璃互连的方法
    • US6136680A
    • 2000-10-24
    • US489498
    • 2000-01-21
    • Jane-Bai LaiChung-Shi LiuTien-I BaoSyun-Ming JangChung-Long ChangHui-Ling WangSzu-An WuWen-Kung ChengChun-Ching TsanYing-Lang Wang
    • Jane-Bai LaiChung-Shi LiuTien-I BaoSyun-Ming JangChung-Long ChangHui-Ling WangSzu-An WuWen-Kung ChengChun-Ching TsanYing-Lang Wang
    • H01L21/02H01L21/3105H01L21/321H01L21/768H01L21/44H01L21/4763
    • H01L21/76825H01L21/02074H01L21/3105H01L21/3212H01L21/76826H01L21/76834H01L21/7684H01L21/76883
    • A method of forming an interconnect, comprising the following steps. A semiconductor structure is provided that has an exposed first metal contact and a dielectric layer formed thereover. An FSG layer having a predetermined thickness is then formed over the dielectric layer. A trench, having a predetermined width, is formed within the FSG layer and the dielectric layer exposing the first metal contact. A barrier layer, having a predetermined thickness, may be formed over the FSG layer and lining the trench side walls and bottom. A metal, preferably copper, is then deposited on the barrier layer to form a copper layer, having a predetermined thickness, over said barrier layer covered FSG layer, filling the lined trench and blanket filling the barrier layer covered FSG layer. The copper layer, and the barrier layer on said upper surface of said FSG layer, are planarized, exposing the upper surface of the FSG layer and forming a planarized copper filled trench. The FSG layer and planarized copper filled trench are then processed by either: (1) annealing from about 400 to 450.degree. C. for about one hour, then either NH.sub.3 or H.sub.2 plasma treating; or (2) Ar.sup.+ sputtering to ion implant Ar.sup.+ to a depth of less than about 300 .ANG. in the fluorinated silica glass layer, whereby any formed Si--OH bonds and copper oxide (metal oxide) are removed. A dielectric cap layer, having a predetermined thickness, is then formed over the processed FSG layer and the planarized copper filled trench.
    • 一种形成互连的方法,包括以下步骤。 提供一种半导体结构,其具有暴露的第一金属触点和形成在其上的电介质层。 然后在电介质层上形成具有预定厚度的FSG层。 具有预定宽度的沟槽形成在FSG层内,并且介电层露出第一金属接触。 具有预定厚度的阻挡层可以形成在FSG层之上并且衬在沟槽侧壁和底部。 然后将一种金属,优选铜沉积在阻挡层上,以形成具有预定厚度的铜层,超过所述阻挡层覆盖的FSG层,填充衬里的沟槽和覆盖填充阻挡层覆盖的FSG层的毯子。 所述FSG层的所述上表面上的铜层和阻挡层被平坦化,暴露出FSG层的上表面并形成平坦化的铜填充沟槽。 然后通过以下步骤之一处理FSG层和平坦化的铜填充沟槽:(1)从约400至450℃的退火约1小时,然后进行NH 3或H 2等离子体处理; 或者(2)在氟化石英玻璃层中,离子注入Ar +溅射至小于约300的深度,由此除去任何形成的Si-OH键和氧化铜(金属氧化物)。 然后在经处理的FSG层和平坦化的铜填充沟槽上形成具有预定厚度的电介质盖层。