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71. 发明授权

US06856433B2 Holographic recording medium and holographic recording/reproducing apparatus using the same 失效
标题翻译：全息记录介质和全息记录/再现装置
公开(公告)号：US06856433B2
公开(公告)日：2005-02-15
申请号：US10656879
申请日：2003-09-08
申请人： Hideki Hatano , Takashi Yamaji , Kenji Kitamura , Shunji Takekawa , Masaru Nakamura
发明人： Hideki Hatano , Takashi Yamaji , Kenji Kitamura , Shunji Takekawa , Masaru Nakamura
IPC分类号： G03H1/02 , G03H1/26 , G06K19/06 , G11B7/0065
CPC分类号： G03H1/02 , G03H2001/0491 , G03H2260/54 , G11B7/0065
摘要： A holographic recording medium exhibiting a high recording sensitivity without execution of reduction treatment. A system records information on the holographic recording medium by using a gating light within a wavelength band causing less optical damage to the holographic recording medium. The holographic recording medium includes a single crystal of lithium niobate (LiNbO3) or lithium tantalate (LiTaO3) containing Mn as a dopant.
摘要翻译：具有高记录灵敏度的全息记录介质，而不执行还原处理。系统通过使用波长带内的门控光对全息记录介质造成更少的光学损伤来在全息记录介质上记录信息。全息记录介质包括含有Mn作为掺杂剂的铌酸锂（LiNbO 3）或钽酸锂（LiTaO 3）的单晶。

72. 发明授权

US06535472B1 Hologram recording apparatus and method therefor 失效
标题翻译：全息记录装置及其方法
公开(公告)号：US06535472B1
公开(公告)日：2003-03-18
申请号：US09631646
申请日：2000-08-02
申请人： Myeongkyu Lee , Kenji Kitamura , Yasunori Furukawa , Shunji Takekawa , Hideki Hatano
发明人： Myeongkyu Lee , Kenji Kitamura , Yasunori Furukawa , Shunji Takekawa , Hideki Hatano
IPC分类号： G11B700
CPC分类号： G11B7/1275 , G03H2001/026 , G03H2001/0268 , G11B7/0025 , G11B7/0065 , G11B7/243 , G11B2007/0009 , G11B2007/24306 , G11B2007/2432
摘要： A hologram recording apparatus is capable of directing interferable signal light and reference light into a hologram recording medium to record an information signal carried by the signal light. The hologram recording medium is sensitive to a first light at a first wavelength in an ultraviolet or short-wavelength visible light band to develop light induced absorption. The apparatus includes a light source for irradiating the hologram recording medium with the first light, and a laser light source for irradiating the hologram recording medium with signal light and reference light at a second wavelength longer than the first wavelength after the first light is irradiated.
摘要翻译：全息记录装置能够将干涉信号光和参考光引导到全息图记录介质中，以记录由信号光携带的信息信号。全息图记录介质对紫外或短波长可见光波段中的第一波长的第一光敏感，以产生光吸收。该装置包括用于照射第一光的全息图记录介质的光源和用于在第一光照射之后以比第一波长长的第二波长的信号光和参考光照射全息图记录介质的激光光源。

73. 发明授权

US06465295B1 Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06465295B1
公开(公告)日：2002-10-15
申请号：US08620928
申请日：1996-03-22
申请人： Kenji Kitamura
发明人： Kenji Kitamura
IPC分类号： H01L218238
CPC分类号： H01L21/76218 , H01L21/823807 , H01L21/823842 , H01L21/823878 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device fabrication method comprises the steps of forming a gate insulating film on a surface of a semiconductor substrate, forming a polysilicon film on the gate insulating film, and implanting B or BF2 impurity ions into the polysilicon film. The polysilicon film is then heat-treated at a temperature of 700-900° C. to activate and diffuse the implanted B or BF2 impurity ions. Thereafter, a silicide film is formed on the heat-treated polysilicon film. The silicide film and the heat-treated polysilicon film are then etched to form a gate electrode on the gate insulating film. A CVD-grown dielectric film having a thickness of 5 to 1000 Å is then formed over the whole surface of the semiconductor substrate and the gate electrode. B or BF2 impurity ions are then implanted into the surface of the semiconductor substrate, using the gate electrode as a mask, to form source/drain regions. A BPSG interlayer film is then formed on the CVD-grown dielectric film, and the source/drain regions and the BPSG interlayer film are heated at a temperature of 800-1050° C. for a period less than 3 minutes to activate the source/drain regions and to planarize the BPSG interlayer film.
摘要翻译：半导体器件制造方法包括以下步骤：在半导体衬底的表面上形成栅极绝缘膜，在栅极绝缘膜上形成多晶硅膜，并将B或BF 2杂质离子注入到多晶硅膜中。然后将多晶硅膜在700-900℃的温度下热处理，以激活和扩散注入的B或BF 2杂质离子。此后，在热处理多晶硅膜上形成硅化物膜。然后对硅化物膜和经热处理的多晶硅膜进行蚀刻，以在栅极绝缘膜上形成栅电极。然后在半导体衬底和栅电极的整个表面上形成厚度为5至1000埃的CVD生长的电介质膜。然后使用栅电极作为掩模将B或BF 2杂质离子注入到半导体衬底的表面中，以形成源/漏区。然后在CVD生长的电介质膜上形成BPSG层间膜，并将源极/漏极区域和BPSG中间膜在800-1050℃的温度下加热少于3分钟的时间，以激活源/ 漏区，并使BPSG中间膜平坦化。

74. 发明授权

US06184558B2 Comparator having reduced offset voltage 有权
标题翻译：具有降低的偏移电压的比较器
公开(公告)号：US06184558B2
公开(公告)日：2001-02-06
申请号：US09323503
申请日：1999-06-01
申请人： Kenji Kitamura , Mika Shiiki , Jun Osanai
发明人： Kenji Kitamura , Mika Shiiki , Jun Osanai
IPC分类号： H07L2978
CPC分类号： H01L21/823807 , H01L27/0922
摘要： An object of the invention is to reduce an offset voltage to realize a small occupying area in a comparator using MOS type transistors. The invention is characterized in that impurities are introduced into channel areas of MOS type transistors, and mobility of the MOS type transistor on a load side is smaller than mobility of the MOS type transistor on a differential side, and a mutual conductance gm of the MOS type transistor on the load side is smaller than a mutual conductance gm of the MOS type transistor on the differential side.
摘要翻译：本发明的一个目的是减少偏移电压，以便在使用MOS型晶体管的比较器中实现小占用面积。本发明的特征在于，杂质被引入到MOS型晶体管的沟道区域中，负载侧的MOS型晶体管的迁移率小于差分侧的MOS型晶体管的迁移率，MOS的晶体管的互导体gm 负载侧的晶体管小于差动侧的MOS型晶体管的互导gm。

75. 发明授权

US5489794A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5489794A
公开(公告)日：1996-02-06
申请号：US64707
申请日：1993-05-20
申请人： Koju Nonaka , Shigeyuki Tsunoda , Kenji Kitamura
发明人： Koju Nonaka , Shigeyuki Tsunoda , Kenji Kitamura
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/68
CPC分类号： H01L27/0925 , H01L21/823807
摘要： The semiconductor device contains a CMOS transistor pair comprised of a P channel MOS transistor having a polysilicon gate 4 and an N channel MOS transistor having a polysilicon gate. The MOS transistor has a channel dope layer 5 localized in a vicinity of a surface of a channel region just below a gate electrode. This channel dope layer 5 has a quite shallow p-n junction depth xj effective to suppress a leak current. Thereby, an amount of impurity concentration in the surface of the channel region can be reduced to improve a subthreshold characteristics of the MOS transistor and to enable a low voltage and high speed operation under suppressing a leakage current.
摘要翻译：半导体器件包含由具有多晶硅栅极4的P沟道MOS晶体管和具有多晶硅栅极的N沟道MOS晶体管组成的CMOS晶体管对。 MOS晶体管具有位于栅电极正下方的沟道区的表面附近的沟道掺杂层5。该通道掺杂层5具有非常浅的p-n结深度xj，以有效地抑制泄漏电流。由此，能够降低沟道区域的表面的杂质浓度，提高MOS晶体管的亚阈值特性，能够在抑制漏电流的同时实现低电压和高速运转。

76. 发明授权

US4843670A Method for coloring textile using a color supply drum and a color suction drum 失效
标题翻译：使用供色鼓和彩色抽吸滚筒着色纺织品的方法
公开(公告)号：US4843670A
公开(公告)日：1989-07-04
申请号：US130126
申请日：1987-12-08
申请人： Shuichi Nakahara , Toru Koide , Michinobu Kaimori , Kenji Kitamura , Satoshi Matsumoto
发明人： Shuichi Nakahara , Toru Koide , Michinobu Kaimori , Kenji Kitamura , Satoshi Matsumoto
IPC分类号： B05C1/10 , B05C9/04 , D06B11/00
CPC分类号： B05C1/10 , B05C9/04 , D06B11/0003
摘要： This invention provides a method and an apparatus for direct formation of a stripe pattern on a textile substrate such as sliver. The object of the invention is to dispense with a gill which would interfere with a high-speed feed of said textile substrate and thereby improve the efficiency of coloration. In accordance with this invention, a color supply hollow drum (2) and a color suction hollow drum (3) are vetically juxtaposed and a continuous length of fibrous material is continuously fed between said two drums (2), (3) by rotation thereof. As the substrate material is thus fed, a color composition is supplied from color supply grooves (8) of the color supply hollow drum (2) while it is drawn by a suction force acting in color suction grooves (13) of the color suction hollow drum (3) to cause the color composition to strike through the fibrous substrate material to thereby form color stripes of substantially the same configuration as that of the above-mentioned grooves on the fibrous substrate material.
摘要翻译：本发明提供了一种用于在诸如条子的织物基底上直接形成条纹图案的方法和装置。本发明的目的是省去会妨碍所述织物基材的高速进料并因此提高着色效率的鳃。根据本发明，色彩供应中空鼓（2）和彩色抽吸中空鼓（3）被并列并且连续长度的纤维材料通过其旋转连续地供给在所述两个滚筒（2），（3）之间。当由此供给衬底材料时，通过作用在吸色空心鼓（2）的彩色抽吸槽（13）中的抽吸力来抽出颜色组合物，色彩供应凹槽（8）鼓（3）使颜色组合物穿过纤维基材，从而形成与纤维基材上的上述凹槽基本上相同构型的色条。

77. 发明授权

US4221606A Phthalocyanine pigment compositions 失效
标题翻译：酞菁颜料组合物
公开(公告)号：US4221606A
公开(公告)日：1980-09-09
申请号：US954502
申请日：1978-10-25
申请人： Takenori Funatsu , Yoichi Inuzuka , Tetsuo Mishina , Kenji Kitamura , Ataru Chiba
发明人： Takenori Funatsu , Yoichi Inuzuka , Tetsuo Mishina , Kenji Kitamura , Ataru Chiba
IPC分类号： C09B67/16 , C09B67/00 , C09B67/20 , C09B67/22 , C08K5/00
CPC分类号： C09B67/0032 , C09B67/0035
摘要： A phthalocyanine pigment composition comprising (A) 100 parts by weight of phthalocyanine pigment, (B) a specific phthalocyanine derivative and (C) a polyvalent metal salt of an anionic surface-active agent, the compounds (B) and (C) being contained in a molar ratio of 1:0.1-5 and totalling 0.5-30 parts by weight, the pigment composition being useful as a colorant in the preparation of coating materials and printing inks having excellent non-crystallization and non-flocculation as well as satisfactory fluidity, from which coating materials and printing inks are obtained coatings or films having remarkable gloss and high tinting strength.
摘要翻译：一种酞菁颜料组合物，其包含（A）100重量份酞菁颜料，（B）特定酞菁衍生物和（C）阴离子表面活性剂的多价金属盐，所述化合物（B）和（C）摩尔比为1：0.1-5，总计为0.5-30重量份，颜料组合物可用作制备涂料和印刷油墨的着色剂，具有优异的非结晶和非絮凝性以及令人满意的流动性，从其中获得涂料和印刷油墨，获得具有显着光泽和高着色力的涂层或膜。

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