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    • 72. 发明授权
    • Positive resist composition and method of forming pattern using the same
    • 正型抗蚀剂组合物和使用其形成图案的方法
    • US07105275B2
    • 2006-09-12
    • US10870220
    • 2004-06-18
    • Kenichiro Sato
    • Kenichiro Sato
    • G03F7/004
    • G03F7/0397Y10S430/106Y10S430/111
    • A positive resist composition comprising (A) a resin that increases solubility in a developing solution by the action of an acid and comprises (a) a repeating unit containing a group that is decomposed by the action of an acid to become alkali-soluble, (b) a repeating unit containing an alicyclic lactone structure, (c) a repeating unit containing an alicyclic structure substituted with a hydroxy group and (d) a methacrylic acid repeating unit, wherein an amount of the methacrylic acid repeating unit is from 5 to 18% by mole based on the total repeating units of the resin, and (B) a compound that generates an acid upon irradiation of an actinic ray or radiation.
    • 一种正型抗蚀剂组合物,其包含(A)通过酸的作用增加在显影液中的溶解度的树脂,并且包含(a)含有通过酸作用而分解成碱溶性的基团的重复单元( b)含有脂环族内酯结构的重复单元,(c)含有被羟基取代的脂环结构的重复单元和(d)甲基丙烯酸重复单元,其中甲基丙烯酸重复单元的量为5〜18 基于树脂的总重复单元的摩尔%,和(B)在光化射线或辐射照射时产生酸的化合物。
    • 77. 发明授权
    • Positive photosensitive composition
    • 正光敏组合物
    • US06818377B2
    • 2004-11-16
    • US10176067
    • 2002-06-21
    • Kunihiko KodamaKenichiro SatoToshiaki Aoai
    • Kunihiko KodamaKenichiro SatoToshiaki Aoai
    • G03F7004
    • G03F7/0397G03F7/0045Y10S430/106Y10S430/111
    • A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.
    • 一种正型光敏组合物,其包含(A)在用光化射线或辐射照射时产生酸的化合物,和(B-1)具有通过酸作用分解的基团的树脂,以增加在碱性显影中的溶解度 溶液,并且如说明书中所述含有至少一种由式(I),(II)和(III)表示的结构,或(B-2)具有至少一个由式(Ib)表示的一价多元脂环基团的树脂,如 说明书和通过酸的作用而分解以增加在碱性显影液中的溶解度的基团。 含有本发明树脂的正型感光性组合物对于远紫外线具有高透射率,特别是波长为220nm以下,表现出良好的耐干蚀刻性。 此外,当使用波长为250nm以下,特别是220nm以下的远紫外光(特别是ArF准分子激光)时,正型感光性组合物显示出高灵敏度,良好的分辨率和良好的图案分布,作为曝光光源, 因此可以有效地用于形成半导体元件的制造所需的精细图案。
    • 78. 发明授权
    • Positive photoresist composition for far ultraviolet exposure
    • 用于远紫外线曝光的正光致抗蚀剂组合物
    • US06794108B1
    • 2004-09-21
    • US09541597
    • 2000-04-03
    • Kenichiro SatoYutaka AdegawaToshiaki AoaiKunihiko Kodama
    • Kenichiro SatoYutaka AdegawaToshiaki AoaiKunihiko Kodama
    • G03F7004
    • G03F7/0397G03F7/0045G03F7/0395Y10S430/106Y10S430/111
    • The present invention provides a positive photoresist composition for far ultraviolet exposure, which comprises a polymer having at least one of a repeating unit represented by formula (Ia) and a repeating unit represented by formula (Ib), and a repeating unit represented by formula (II), and having a group capable of decomposing by the action of an acid: wherein R1 and R2 each represents hydrogen atom, a cyano group, a hydroxyl group, —COOH, —COOR5, —CO—NH—R6, —CO—NH—SO2—R6, an alkyl group, an alkoxy group, a cyclic hydrocarbon group or a —Y group, X represents —O—, —S—, —NH—, —NHSO2— or —NHSO2NH—, A represents a single bond or a divalent linking group, Z2 represents —O— or —N(R3)—, R11 and R12 each represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group, Z1 represents an atomic group necessary for forming an alicyclic structure which contains two bonded carbon atoms (C—C), and Y, R3, R5 and R6 are as defined in the specification.
    • 本发明提供一种用于远紫外线曝光的正性光致抗蚀剂组合物,其包含具有式(Ia)表示的重复单元和式(Ib)表示的重复单元中的至少一种的聚合物和由式(Ib)表示的重复单元, II),并且具有能够通过酸的作用分解的基团:其中R 1和R 2各自表示氢原子,氰基,羟基,-COOH,-COOR 5,-CO-NH-R 6,-CO- NH-SO 2 -R 6,烷基,烷氧基,环状烃基或-Y基,X表示-O - , - S - , - NH-,-NHSO 2 - 或-NHSO 2 NH-,A表示单 键或二价连接基团,Z 2表示-O-或-N(R 3) - ,R 11和R 12各自表示氢原子,氰基,卤素原子或烷基,Z 1表示形成 含有两个键合碳原子(CC)的脂环结构,Y,R3,R5和R6如说明书中所定义。
    • 79. 发明授权
    • Positive photoresist composition for far ultraviolet exposure
    • 用于远紫外线曝光的正光致抗蚀剂组合物
    • US06787283B1
    • 2004-09-07
    • US09620708
    • 2000-07-20
    • Toshiaki AoaiKenichiro SatoKunihiko Kodama
    • Toshiaki AoaiKenichiro SatoKunihiko Kodama
    • G03F7039
    • G03F7/0397G03F7/0045Y10S430/106Y10S430/111
    • Disclosed is a positive photoresist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in alkali, containing a repeating unit having a group represented by the following formula (I): wherein R1 represents hydrogen atom or an alkyl group having from 1 to 4 carbon atoms, which may have a substituent, R1 to R7, which may be the same or different, each represents hydrogen atom, an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent or an alkenyl group which may have a substituent, provided that at least one of R6 and R7 is a group exclusive of hydrogen atom and R6 and R7 may combine to form a ring, and m and n each independently represents 0 or 1, provided that m and n are not 0 at the same time. The positive photoresist composition can further comprise a fluorine-containing and/or silicon-containing surfactant and at least one first solvent selected from propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate and 3-ethoxypropionate.
    • 公开了一种正型光致抗蚀剂组合物,其包含(A)在用光化射线或辐射照射时能够产生酸的化合物和(B)能够在酸的作用下分解以增加在碱中的溶解度的树脂,其含有重复单元 具有由下式(I)表示的基团:其中R 1表示氢原子或可具有取代基的具有1至4个碳原子的烷基,R 1至R 7可以相同或不同,各自表示氢 原子,可以具有取代基的烷基,可以具有取代基的环烷基或可以具有取代基的烯基,条件是R 6和R 7中的至少一个是不是氢原子的基团,并且R 6和R 7可以 组合形成环,m和n各自独立地表示0或1,条件是m和n不同时为0。 正性光致抗蚀剂组合物可以进一步包括含氟和/或含硅表面活性剂和至少一种选自丙二醇单甲醚乙酸酯,丙二醇单甲醚丙酸酯,3-甲氧基丙酸甲酯,3-甲氧基丙酸乙酯,甲基3 乙氧基丙酸酯和3-乙氧基丙酸酯。