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    • 73. 发明授权
    • Recording member
    • 录音成员
    • US4348461A
    • 1982-09-07
    • US160661
    • 1980-06-18
    • Motoyasu TeraoYoshio TaniguchiShinkichi HorigomeMasahiro OjimaKazuo ShigematsuKeizo KatoYoshinori MiyamuraSeiji Yonezawa
    • Motoyasu TeraoYoshio TaniguchiShinkichi HorigomeMasahiro OjimaKazuo ShigematsuKeizo KatoYoshinori MiyamuraSeiji Yonezawa
    • B41M5/26G03C1/705G11B7/24G11B7/243B32B5/14
    • G11B7/243G03C1/705G11B2007/24314G11B2007/24316Y10S428/913Y10S430/146Y10S430/165Y10T428/31
    • A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime. It is preferable that the distribution of said Se decreases so as to be at least 50 atomic-% in terms of the content of said Se in a part being the closest to the surface of said thin film and to be at most 40 atomic-% in terms of the average content of said Se over the whole thin film, and that the distribution of said As increases so as to be at most 15 atomic-% in terms of the content of said As in the closest part and to be 5 to 35 atomic-% in terms of the average content of said As in said whole thin film. The Se-Te-As-based material may well be doped with at least one element selected from the group consisting of Ge, S, Tl, Sn, Pb, In and Ta, within a range of 2 to 15 atomic-%.
    • 具有预定基板的记录部件和形成在基板上并且在用工作光束照射时用于记录信息的凹坑或凹坑形成的薄膜,其特征在于,所述薄膜由无机材料形成,所述无机材料包含 至少砷,硒和碲,并且所述Se和所述Te中的任一个的分布从所述薄膜的表面附近的部分向其中心部分减少,而所述As的分布从表面附近的部分增加 朝向所述中心部分。 该记录部件可以提供高的信噪比和长的使用寿命。 优选所述Se的分布以与所述薄膜表面最接近的部分中的所述Se的含量为至少50原子%,并且为至多40原子% 就所述Se在整个薄膜上的平均含量而言,所述As的分布以所述As在最接近的部分的含量为最多为15原子%,并且为5〜 在所述整个薄膜中,所述As的平均含量为35原子%。 可以在2至15原子%的范围内掺杂选自由Ge,S,Tl,Sn,Pb,In和Ta组成的组中的至少一种元素的Se-Te-As基材料。