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71. 发明申请

WO2008125543A3 METHOD FOR REDUCING THE THICKNESS OF SUBSTRATES 审中-公开
公开(公告)号：WO2008125543A3
公开(公告)日：2008-10-23
申请号：PCT/EP2008/054207
申请日：2008-04-08
申请人： Interuniversitair Microelektronica Centrum (IMEC) , COTRIN TEIXEIRA, Ricardo
发明人： COTRIN TEIXEIRA, Ricardo
IPC分类号： H01L21/304 , H01L21/78
摘要： The current invention presents a method for thinning wafers. The method uses a two-step process, whereby first the carrier wafer (2) is thinned and in a second step the device wafer (1 ) is thinned. The method is based on imprinting the combined thickness non-uniformities of carrier (2) and glue layer (3) essentially on the carrier (2), with a resulting low TTV of the wafer (100) after thinning.

72. 发明申请

WO2008122607A1 METHOD AND SYSTEM FOR MULTIPLEXER WAVEGUIDE COUPLING 审中-公开
标题翻译：多波束波形耦合的方法与系统
公开(公告)号：WO2008122607A1
公开(公告)日：2008-10-16
申请号：PCT/EP2008/054091
申请日：2008-04-04
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) , UNIVERSITEIT GENT , GENEXIS BV , ROELKENS, Günther , VAN THOURHOUT, Dries , BAETS, Roel , VAN DEN HOVEN, Gerard, Nicolaas
发明人： ROELKENS, Günther , VAN THOURHOUT, Dries , BAETS, Roel , VAN DEN HOVEN, Gerard, Nicolaas
IPC分类号： G02B6/124 , G02B6/126 , G02B6/30 , G02B6/34 , H04B10/24
CPC分类号： G02B6/29317 , G02B6/12007 , G02B6/126 , G02B6/30 , G02B6/34 , G02B6/4213 , G02B6/4215
摘要： An optical device for optically multiplexing or demultiplexing light of different predetermined wavelengths is provided, the optical device comprising at least one first waveguide (11) and at least one second waveguide (12) formed on a substrate (10), wherein the at least one first waveguide and the at least one second waveguide intersect at an intersection, comprising a diffraction grating structure (13) formed at the intersection. There exists a first wavelength or wavelength band travelling within the first waveguide (11) exciting the grating structure and being diffracted an angle corresponding to an outcoupling direction and there exists a second wavelength or wavelength band, different from the first wavelength or wavelength band, travelling within the second waveguide (12) exciting the grating structure and being diffracted at an angle corresponding to the same outcoupling direction. The two radiation beams comprising radiation of two different wavelengths or wavelength bands are spatially separated into the optical waveguides (11 and 12) or combined into single outcoupling direction, e.g. into a single optical element, e.g. a single optical fiber (21). An optical device may be used in local access communications such as fiber to the home, office or curb applications.
摘要翻译：提供了用于光学地多路复用或解复用不同预定波长的光的光学装置，该光学装置包括至少一个第一波导（11）和形成在基底（10）上的至少一个第二波导（12），其中至少一个第一波导和所述至少一个第二波导在交叉点处相交，包括在交叉点处形成的衍射光栅结构（13）。存在在第一波导（11）内行进的第一波长或波长带，激发光栅结构并衍射出与耦合方向相对应的角度，并且存在不同于第一波长或波长带的第二波长或波长带，在第二波导（12）内激发光栅结构并以对应于相同的外耦合方向的角衍射。包括两个不同波长或波长带的辐射的两个辐射束在空间上分离成光波导（11和12）或组合成单个外耦合方向，例如。进入单个光学元件，例如单个光纤（21）。光学设备可以用于本地接入通信，例如光纤到家庭，办公室或路边应用。

73. 发明申请

WO2008026081A2 METHOD FOR MANUFACTURING A RESISTIVE SWITCHING DEVICE AND DEVICES OBTAINED THEREOF 审中-公开
标题翻译：制造电阻切换装置的方法和由此获得的装置
公开(公告)号：WO2008026081A2
公开(公告)日：2008-03-06
申请号：PCT/IB2007/004248
申请日：2007-08-31
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) , NXP B.V. , GOUX, Ludovic , WOUTERS, Dirk
发明人： GOUX, Ludovic , WOUTERS, Dirk
CPC分类号： H01L45/04 , B82Y10/00 , G11C13/0007 , G11C13/0009 , G11C13/0014 , G11C2213/32 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L27/285 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/1683 , H01L51/0575
摘要： For improved scalability of resistive switching memories, a cross-point resistive switching structure is disclosed wherein the plug itself is used to store the resistive switching material and where the top electrode layer is self-aligned to the plug using, for example, chemical-mechanical-polishing (CMP) or simply mechanical-polishing.
摘要翻译：为了改进电阻式切换存储器的可扩展性，公开了一种交叉点电阻切换结构，其中塞本身用于存储电阻切换材料，并且其中顶部电极层与插头自对准例如使用化学机械抛光（CMP）或简单的机械抛光。

74. 发明申请

WO2008011979A1 DEPOSITION OF GROUP III-NITRIDES ON GE 审中-公开
标题翻译：第三类氮氧化物沉积在GE上
公开(公告)号：WO2008011979A1
公开(公告)日：2008-01-31
申请号：PCT/EP2007/006050
申请日：2007-07-09
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM , VRIJE UNIVERSITEIT BRUSSEL , LIETEN, Ruben , DEGROOTE, Stefan
发明人： LIETEN, Ruben , DEGROOTE, Stefan
IPC分类号： H01L21/20
CPC分类号： C30B23/025 , C30B23/02 , C30B29/403 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02521 , H01L21/02614
摘要： The present invention provides a method for depositing or growing a group Ill-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3), preferably with hexagonal symmetry. The method comprises heating the substrate (1) to a nitridation temperature between 400°C and 940°C while exposing the substrate (1) to a nitrogen gas flow and subsequently depositing the group Ill-nitride layer, e.g. GaN layer (5), onto the Ge surface (3) at a deposition temperature between 100°C and 940°C. By a method according to embodiments of the invention, a group Ill-nitride layer, e.g. GaN layer (5), with good crystal quality may be obtained. The present invention furthermore provides a group Ill-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.
摘要翻译：本发明提供了一种用于沉积或生长III族氮化物层的方法， GaN衬底（1）上的GaN层（5），至少包括Ge表面（3）的衬底（1），优选具有六边形对称性。该方法包括将基底（1）加热至400℃至940℃之间的氮化温度，同时将基底（1）暴露于氮气流中，随后沉积III族氮化物层。 GaN层（5）在100℃至940℃的沉积温度下在Ge表面（3）上。通过根据本发明的实施方案的方法，可以使用例如III族氮化物层。可以获得具有良好晶体质量的GaN层（5）。本发明还提供了通过根据本发明的实施例的方法形成的III族氮化物/衬底结构以及包括至少一种这样的结构的半导体器件。

75. 发明申请

WO2007132016A1 DIGITAL RECEIVER FOR SOFTWARE-DEFINED RADIO IMPLEMENTATION 审中-公开
标题翻译：数字接收机用于软件定义的无线电实施
公开(公告)号：WO2007132016A1
公开(公告)日：2007-11-22
申请号：PCT/EP2007/054770
申请日：2007-05-16
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) , SAMSUNG ELECTRONICS CO. LTD. , BOUGARD, Bruno
发明人： BOUGARD, Bruno
IPC分类号： H04B1/28
CPC分类号： H04B1/406 , Y02D70/126
摘要： The present invention is related to a digital receiver comprising - means (90) for receiving packetised data, - a first processing module (10) for packet detection comprising a first programmable processor (15), - a second processing module (50) for demodulation and packet decoding comprising a second programmable processor (55), - a first digital receive controller (30) comprising a third processor arranged for being notified of detection of data by said first processing module (10) and for activating the second processing module (50).
摘要翻译：本发明涉及一种数字接收机，包括 - 用于接收打包数据的装置（90）， - 用于分组检测的第一处理模块（10），包括第一可编程处理器（15）， - 第二处理模块（50），用于解调以及分组解码，包括第二可编程处理器（55）， - 第一数字接收控制器（30），包括第三处理器，所述第三处理器被布置为被所述第一处理模块（10）的数据检测通知，并激活所述第二处理模块）。

76. 发明申请

WO2007065627A2 DISTRIBUTED LOOP CONTROLLER ARCHITECTURE FOR MULTI-THREADING IN UNI-THREADED PROCESSORS 审中-公开
标题翻译：分布式环路控制器结构，用于在非线性处理器中进行多路连接
公开(公告)号：WO2007065627A2
公开(公告)日：2007-06-14
申请号：PCT/EP2006/011655
申请日：2006-12-05
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , KATHOLIEKE UNIVERSITEIT LEUVEN , JAYAPALA, Murali , RAGHAVAN, Praveen , CATTHOOR, Franky
发明人： JAYAPALA, Murali , RAGHAVAN, Praveen , CATTHOOR, Franky
IPC分类号： G06F9/38 , G06F9/32 , G06F9/45
CPC分类号： G06F9/381 , G06F9/325 , G06F9/3851 , G06F9/3885 , G06F9/3891
摘要： The present invention proposes a virtually multi-threaded distributed instruction memory hierarchy that can support the execution of multiple incompatible loops in parallel. In addition to regular loops, irregular loops with conditional constructs and nested loops can be mapped. In the architecture in accordance with embodiments of the present invention, the loop buffers are clustered, each loop buffer having its own local controller, and each local controller is responsible for indexing and regulating accesses to its loop buffer.
摘要翻译：本发明提出了可以并行地支持多个不兼容循环的执行的虚拟多线程分布式指令存储器层次结构。除了常规循环，可以映射具有条件结构和嵌套循环的不规则循环。在根据本发明的实施例的架构中，循环缓冲器是聚类的，每个循环缓冲器具有其自己的本地控制器，并且每个本地控制器负责索引和调整对其循环缓冲器的访问。

77. 发明申请

WO2007042507A2 SYSTEMS AND METHODS FOR TRANSFERRING SINGLE-ENDED BURST SIGNAL ONTO DIFFERENTIAL LINES, ESPECIALLY FOR USE IN BURST-MODE RECEIVER 审中-公开
标题翻译：用于将单端突发信号传输到差分线路上的系统和方法，特别用于突发模式接收器
公开(公告)号：WO2007042507A2
公开(公告)日：2007-04-19
申请号：PCT/EP2006/067215
申请日：2006-10-09
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , UNIVERSITEIT GENT (RUG) , OSSIEUR, Peter , DE RIDDER, Tine , BAUWELINCK, Johan , QIU, Xing-Zhi , VANDEWEGE, Jan
发明人： OSSIEUR, Peter , DE RIDDER, Tine , BAUWELINCK, Johan , QIU, Xing-Zhi , VANDEWEGE, Jan
IPC分类号： H03F3/08 , H03F3/45
CPC分类号： H03F3/087 , H03F1/08 , H03F3/45085 , H03F3/45941 , H03F2203/45082 , H03F2203/45138 , H03F2203/45392
摘要： Systems and methods for transferring incoming single-ended burst signals of which at least one characteristic varies widely from burst to burst onto a pair of differential lines. The systems comprise an input for receiving an incoming burst signal, a signal adaptation block for adapting said widely varying characteristic and a single-ended-to-differential converter. In a first aspect a reset signal for resetting a settings determination block, which controls the signal adaptation block, is sent backwards over the differential lines, preferably using a common-mode signal. In a second aspect, a status freezing mechanism is employed for freezing the settings of the settings determination block after the end of the preamble of an incoming burst.
摘要翻译：用于传送输入单端突发信号的系统和方法，其中至少一个特性从突发到突发变化到一对差分线上。该系统包括用于接收输入突发信号的输入端，用于适应所述宽泛变化特性的信号适配模块和单端至差分转换器。在第一方面中，用于重置设置确定块的重置信号（其控制信号适配块）通过差分线向后发送，优选地使用共模信号。在第二方面中，采用状态冻结机制来冻结输入突发的前导码结束后的设置确定块的设置。

78. 发明申请

WO2006128922A1 METHOD FOR EXTRACTING THE DISTRIBUTION OF CHARGE STORED IN A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：提取存储在半导体器件中的电荷分布的方法
公开(公告)号：WO2006128922A1
公开(公告)日：2006-12-07
申请号：PCT/EP2006/062944
申请日：2006-06-06
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , FURNÉMONT, Arnaud
发明人： FURNÉMONT, Arnaud
IPC分类号： G11C16/26 , G11C11/56
CPC分类号： G11C16/0475 , G11C16/26 , G11C16/3495
摘要： The invention relates to a method for determining a set of programming conditions for a given type of charge-trapping non-volatile memory device, comprising the steps of: (a) selecting different sets of programming parameters to be applied to the corresponding number of non-volatile memory devices of said type, (b) programming said number of non-volatile memory devices by means of the sets of programming parameters, (c) determining an actual spatial charge distribution of the charge trapping layer of each of the programmed devices, (d) determining the influence of at least one of the programming parameters on the spatial charge distribution, (e) determining an optimised value for at least one of the programming parameters, (f) entering each optimised value in said sets of programming parameters and repeating steps b) to e) at least once.
摘要翻译：本发明涉及一种用于确定给定类型的电荷捕获非易失性存储器件的一组编程条件的方法，包括以下步骤：（a）选择不同的编程参数集合以应用于相应数量的非易失性存储器件，所述类型的非挥发性存储器件，（b）通过所述编程参数组对所述数量的非易失性存储器件进行编程，（c）确定每个编程器件的电荷俘获层的实际空间电荷分布，（d）确定所述编程参数中的至少一个对所述空间电荷分布的影响，（e）确定所述编程参数中的至少一个的优化值，（f）在所述编程参数组中输入每个优化值，以及重复步骤b）至e）至少一次。

79. 发明申请

WO2006097303A1 PHOTOVOLTAIC CELL WITH THICK SILICON OXIDE AND SILICON NITRIDE PASSIVATION FABRICATION 审中-公开
标题翻译：具有硅氧化硅和硅氮化物钝化膜的光电池
公开(公告)号：WO2006097303A1
公开(公告)日：2006-09-21
申请号：PCT/EP2006/002409
申请日：2006-03-16
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , AGOSTINELLI, Guido , BEAUCARNE, Guy , CHOULAT, Patrick
发明人： AGOSTINELLI, Guido , BEAUCARNE, Guy , CHOULAT, Patrick
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/02
CPC分类号： H01L31/02167 , H01L31/022425 , H01L31/18 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A method for the production of a photovoltaic device, for instance solar cell, is disclosed, comprising the steps of providing a substrate having a front main surface and a rear surface; depositing a dielectric layer on the rear surface, wherein the dielectric layer has a thickness larger than 100 nm; depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer and forming back contacts through the dielectric layer and the passivation layer. A method for the production of a photovoltaic device, for instance solar cell, is also disclosed, comprising the steps of providing a substrate having a front main surface and a rear surface; depositing a dielectric layer stack on the rear surface, wherein the dielectric layer stack comprises a sub-stack of dielectric layers, the sub-stack having a thickness larger than 100 nm, the dielectric layer stack having a thickness larger than 200 nm; and forming back contacts through the dielectric layer stack. Corresponding photovoltaic devices, for instance solar cell devices, are also disclosed.
摘要翻译：公开了一种用于生产光伏器件（例如太阳能电池）的方法，包括以下步骤：提供具有前主表面和后表面的衬底; 在后表面上沉积介电层，其中介电层的厚度大于100nm; 在电介质层的顶部上沉积包括氢化SiN的钝化层，并通过介电层和钝化层形成后接触。还公开了用于制造光伏器件（例如太阳能电池）的方法，包括以下步骤：提供具有前主表面和后表面的衬底; 在后表面上沉积介电层堆叠，其中所述电介质层堆叠包括电介质层的子堆叠，所述子堆叠具有大于100nm的厚度，所述电介质层堆叠具有大于200nm的厚度; 并通过介电层堆叠形成后接触。还公开了相应的光伏器件，例如太阳能电池器件。

80. 发明申请

WO2006047840A1 METHOD FOR TRANSPORT OF MAGNETIC PARTICLES AND DEVICES THEREFOR 审中-公开
标题翻译：用于运输磁性颗粒的方法及其装置
公开(公告)号：WO2006047840A1
公开(公告)日：2006-05-11
申请号：PCT/BE2005/000156
申请日：2005-11-07
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) , WIRIX-SPEETJENS, Roel , FYEN, Wim , REEKMANS, Gunter
发明人： WIRIX-SPEETJENS, Roel , FYEN, Wim , REEKMANS, Gunter
IPC分类号： G01N33/543 , B03C1/00 , B01L3/00
CPC分类号： B82Y30/00 , B03C2201/24 , B82Y15/00 , G01N33/54326
摘要： The present invention is related to a method for re-enabling transport by means of a magnetic field gradient transport mechanism of magnetic beads comprising a ligand in a solution on top of a surface comprising a receptor bound with said ligand, comprising the step of changing the properties of said solution such that dissociation occurs between said ligand and said receptor, and such that a sufficient repulsive interaction is created between said surface and said bead to allow transport of said bead.
摘要翻译：本发明涉及一种利用包含配体在包含与所述配体结合的受体的表面顶部的溶液中的磁珠的磁场梯度传递机制来重新实现传输的方法，该方法包括以下步骤：所述溶液的性质使得在所述配体和所述受体之间发生解离，并且使得在所述表面和所述珠粒之间产生足够的排斥相互作用以允许所述珠粒的输送。

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