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71. 发明授权

US08850175B2 Computer apparatus and resetting method for real time clock thereof 有权
标题翻译：计算机设备及其实时时钟复位方法
公开(公告)号：US08850175B2
公开(公告)日：2014-09-30
申请号：US13326344
申请日：2011-12-15
申请人： Chun-Lin Cheng , Yun-Chieh Sung , Kai-Chieh Hsu , Yu-Wei Tsao
发明人： Chun-Lin Cheng , Yun-Chieh Sung , Kai-Chieh Hsu , Yu-Wei Tsao
IPC分类号： G06F1/24 , G06F1/14
CPC分类号： G06F1/14 , G06F1/24
摘要： A computer apparatus and a resetting method for a real time clock (RTC) of the computer apparatus are provided. The resetting method for the RTC includes: generating a judging result by determining whether the computer apparatus is in an S5 state and determining whether a plurality of pre-determined keys are simultaneously pressed; pulling down a resume reset signal according to the judging result and correspondingly pulling down an operating voltage; pulling down an S5 enabling signal after pulling down the operating voltage for a pre-determined delay time; generating an RTC reset signal for resetting the RTC after pulling down the S5 enabling signal is pulled down.
摘要翻译：提供了一种用于计算机装置的实时时钟（RTC）的计算机装置和复位方法。 RTC的复位方法包括：通过确定计算机设备是否处于S5状态并确定是否同时按下多个预定密钥来产生判断结果; 根据判断结果下拉恢复复位信号，并相应地降低工作电压; 在将工作电压拉低预定的延迟时间后，拉下S5使能信号; 产生用于在下拉S5使能信号之后复位RTC的RTC复位信号被拉下。

72. 发明授权

US08833979B2 Light source device with outer lens and light source system using the same 有权
标题翻译：具有外透镜和光源系统的光源装置使用
公开(公告)号：US08833979B2
公开(公告)日：2014-09-16
申请号：US13604701
申请日：2012-09-06
申请人： Chun-Lin Wang , Yu-Shan Shen , Chung-Hsing Chang
发明人： Chun-Lin Wang , Yu-Shan Shen , Chung-Hsing Chang
IPC分类号： F21V3/00 , F21V5/00
CPC分类号： F21V5/04 , F21V17/005 , F21Y2115/10 , G02B19/0014 , G02B19/0061
摘要： A light source device and a light source system using the same are provided. The light source device includes a lens and a light source disposed under the lens. The lens has a light-emitting top surface and a bottom surface having a hole that is surrounded by an inner wall surface and an inner top surface. The inner top surface and a projection area of thereof onto the light-emitting top surface are flat surfaces. The light source has an illumination area, wherein an opening of the hole covers a projection area of the illumination area onto the bottom surface. The light source system includes a plurality of the light source device disposed in a honeycomb arrangement, wherein the light source devices are spaced apart from each other.
摘要翻译：提供了一种光源装置和使用该光源装置的光源系统。光源装置包括设置在透镜下方的透镜和光源。透镜具有发光顶表面和底表面，该底表面具有被内壁表面和内顶表面包围的孔。其内表面和其上的发光顶表面的投影区域是平坦的表面。光源具有照明区域，其中孔的开口将照明区域的投影区域覆盖到底面上。光源系统包括设置在蜂窝结构中的多个光源装置，其中光源装置彼此间隔开。

73. 发明授权

US08786050B2 High voltage resistor with biased-well 有权
标题翻译：具有偏压井的高压电阻
公开(公告)号：US08786050B2
公开(公告)日：2014-07-22
申请号：US13100714
申请日：2011-05-04
申请人： Ru-Yi Su , Fu-Chih Yang , Chun Lin Tsai , Chih-Chang Cheng , Ruey-Hsin Liu
发明人： Ru-Yi Su , Fu-Chih Yang , Chun Lin Tsai , Chih-Chang Cheng , Ruey-Hsin Liu
IPC分类号： H01L21/02
CPC分类号： H01L28/20 , H01L27/0207 , H01L27/0802
摘要： Provided is a high voltage semiconductor device. The semiconductor device includes a doped well located in a substrate that is oppositely doped. The semiconductor device includes a dielectric structure located on the doped well. A portion of the doped well adjacent the dielectric structure has a higher doping concentration than a remaining portion of the doped well. The semiconductor device includes an elongate polysilicon structure located on the dielectric structure. The elongate polysilicon structure has a length L. The portion of the doped well adjacent the dielectric structure is electrically coupled to a segment of the elongate polysilicon structure that is located away from a midpoint of the elongate polysilicon structure by a predetermined distance that is measured along the elongate polysilicon structure. The predetermined distance is in a range from about 0*L to about 0.1*L.
摘要翻译：提供高压半导体器件。半导体器件包括位于衬底中的相对掺杂的掺杂阱。半导体器件包括位于掺杂阱上的电介质结构。邻近电介质结构的掺杂阱的一部分具有比掺杂阱的剩余部分更高的掺杂浓度。半导体器件包括位于电介质结构上的细长多晶硅结构。细长多晶硅结构具有长度L.与电介质结构相邻的掺杂阱的部分电耦合到细长多晶硅结构的段，其远离细长多晶硅结构的中点远离所测量的预定距离细长多晶硅结构。预定距离在从大约0 * L到大约0.1 * L的范围内。

74. 发明授权

US08750918B2 Channel selection method and electronic device thereof 有权
标题翻译：频道选择方法及其电子装置
公开(公告)号：US08750918B2
公开(公告)日：2014-06-10
申请号：US13208331
申请日：2011-08-11
申请人： Wen-Pin Liao , Chun-Lin Kuo , Sin-Jhih Li , Chin-Yu Wang
发明人： Wen-Pin Liao , Chun-Lin Kuo , Sin-Jhih Li , Chin-Yu Wang
IPC分类号： H04M1/00
CPC分类号： H04J11/0023 , H04L5/0023
摘要： A channel selection method and electronic device thereof are provided. In the channel selection method, usable channels of a second communication protocol are selected according to a used channel number of a first communication protocol, and one of the usable channels is selected according to the numbers of wireless access points, thereby preventing or alleviating the interference between the first communication protocol and the second communication protocol.
摘要翻译：提供了一种频道选择方法及其电子装置。在信道选择方法中，根据第一通信协议的使用信道号选择第二通信协议的可用信道，并根据无线接入点的数量选择一个可用信道，从而防止或减轻干扰在第一通信协议和第二通信协议之间。

75. 发明授权

US08704279B2 Embedded JFETs for high voltage applications 有权
标题翻译：用于高压应用的嵌入式JFET
公开(公告)号：US08704279B2
公开(公告)日：2014-04-22
申请号：US13481462
申请日：2012-05-25
申请人： Jen-Hao Yeh , Chih-Chang Cheng , Ru-Yi Su , Ker Hsiao Huo , Po-Chih Chen , Fu-Chih Yang , Chun Lin Tsai
发明人： Jen-Hao Yeh , Chih-Chang Cheng , Ru-Yi Su , Ker Hsiao Huo , Po-Chih Chen , Fu-Chih Yang , Chun Lin Tsai
IPC分类号： H01L29/80
CPC分类号： H01L29/7832 , H01L29/0692 , H01L29/404 , H01L29/41758 , H01L29/42356 , H01L29/66893 , H01L29/66901 , H01L29/808 , H03K17/223
摘要： A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.
摘要翻译：一种器件包括掩埋阱区和第一导电性的第一HVW区，以及位于第一HVW区上的绝缘区。第一导电类型的漏极区域设置在绝缘区域的第一侧和第一HVW区域的顶表面区域中。与第一导电类型相反的第二导电类型的第一阱区和第二阱区在绝缘区的第二侧上。第一导电类型的第二HVW区域设置在第一和第二阱区域之间，其中第二HVW区域连接到掩埋阱区域。第一导电类型的源极区域位于第二HVW区域的顶表面区域中，其中源极区域，漏极区域和掩埋阱区域形成JFET。

76. 发明申请

US20140097457A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20140097457A1
公开(公告)日：2014-04-10
申请号：US13936093
申请日：2013-07-05
申请人： CHIA-HUNG WU , WEN-YUH JYWE , HUNG-TA CHIEN , FU-CHIANG HSU , FANG-HSUAN SU , CHUN-LIN YEH
发明人： CHIA-HUNG WU , WEN-YUH JYWE , HUNG-TA CHIEN , FU-CHIANG HSU , FANG-HSUAN SU , CHUN-LIN YEH
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/007 , H01L33/10 , H01L33/12 , H01L33/20
摘要： A semiconductor device includes a substrate and a semiconductor unit. The substrate includes a base and at least one pattern unit. The pattern unit includes a plurality of surrounding members disposed on the base and a central member surrounded by the surrounding members. A geometrical center is collectively defined by the surrounding members, an interval between the central member and the geometrical center is larger than zero. The semiconductor unit is disposed on the substrate and is operating with a current.
摘要翻译：半导体器件包括衬底和半导体单元。基板包括基部和至少一个图案单元。图案单元包括设置在基部上的多个周围构件和由周围构件包围的中心构件。几何中心由周围的构件共同限定，中心构件和几何中心之间的间隔大于零。半导体单元设置在基板上并以电流工作。

77. 发明授权

US08690550B2 Membrane micropump 有权
标题翻译：膜微型泵
公开(公告)号：US08690550B2
公开(公告)日：2014-04-08
申请号：US12787306
申请日：2010-05-25
申请人： An-Bang Wang , Ming-Che Hsieh , I-Chun Lin , Wen-Huei Tsai
发明人： An-Bang Wang , Ming-Che Hsieh , I-Chun Lin , Wen-Huei Tsai
IPC分类号： F04B17/00
CPC分类号： F04B43/043
摘要： A membrane micropump includes a vibration chamber, at least one flow guide, at least one fluid inlet, at least one fluid outlet, at least one inlet rectifier, at least one outlet rectifier, a vibration membrane and an actuator. The vibration chamber includes at least one chamber inlet and at least one chamber outlet. The flow guide can be connected to the chamber inlet, the vibration chamber, the chamber outlet or in the vibration chamber, or it can have more pairs to enhance the effects. The inlet rectifier connects the chamber inlet to the fluid inlet. The outlet rectifier connects the chamber outlet to the fluid outlet. The vibration membrane is disposed on the vibration chamber. The actuator is connected to the vibration membrane to reciprocate the vibration membrane, enabling fluid to flow into the vibration chamber via the fluid inlet and flow out thereof via the fluid outlet.
摘要翻译：膜微泵包括振动室，至少一个流动引导件，至少一个流体入口，至少一个流体出口，至少一个入口整流器，至少一个出口整流器，振动膜和致动器。振动室包括至少一个室入口和至少一个室出口。流动引导件可以连接到腔室入口，振动室，腔室出口或振动室，或者可以具有更多的对来增强效果。入口整流器将室入口连接到流体入口。出口整流器将室出口连接到流体出口。振动膜设置在振动室上。致动器连接到振动膜以使振动膜往复运动，使得流体能够经由流体入口流入振动室并经由流体出口流出。

78. 发明授权

US08687412B2 Reference cell configuration for sensing resistance states of MRAM bit cells 有权
标题翻译：用于感测MRAM位单元的电阻状态的参考单元配置
公开(公告)号：US08687412B2
公开(公告)日：2014-04-01
申请号：US13438006
申请日：2012-04-03
申请人： Yue-Der Chih , Chun-Jung Lin , Kai-Chun Lin , Hung-Chang Yu
发明人： Yue-Der Chih , Chun-Jung Lin , Kai-Chun Lin , Hung-Chang Yu
IPC分类号： G11C11/00
CPC分类号： G11C11/161 , G11C11/1673
摘要： A reference circuit discerns high or low resistance states of a magneto-resistive memory element such as a bit cell. The reference circuit has magnetic tunnel junction (MTJ) elements in complementary high and low resistance states RH and RL, providing a voltage, current or other parameter for comparison against the memory element to discern a resistance state. The parameter represents an intermediate resistance straddled by RH and RL, such as an average or twice-parallel resistance. The reference MTJ elements are biased from the same read current source as the memory element but their magnetic layers are in opposite order, physically or by order along bias current paths. The reference MTJ elements are biased to preclude any read disturb risk. The memory bit cell is coupled to the same bias polarity source along a comparable path, being safe from read disturb risk in one of its two possible logic states.
摘要翻译：参考电路识别诸如位单元的磁阻存储元件的高或低电阻状态。参考电路具有互补的高电阻状态RH和低电阻状态RL的磁隧道结（MTJ）元件，提供用于与存储元件进行比较的电压，电流或其它参数以识别电阻状态。该参数表示由RH和RL跨过的中间电阻，例如平均或两倍平行的电阻。参考MTJ元件从与存储元件相同的读取电流源偏置，但它们的磁性层在物理上或沿着偏置电流路径的顺序是相反的顺序。参考MTJ元件被偏置以排除任何读取干扰风险。存储器位单元沿着可比较的路径耦合到相同的偏置极性源，在其两种可能的逻辑状态之一中可以避免读取干扰风险。

79. 发明授权

US08675724B2 Decision feedback equalizers and operating methods thereof 有权
标题翻译：决策反馈均衡器及其操作方法
公开(公告)号：US08675724B2
公开(公告)日：2014-03-18
申请号：US12836999
申请日：2010-07-15
申请人： Yung-Chow Peng , Yu-Chun Lin
发明人： Yung-Chow Peng , Yu-Chun Lin
IPC分类号： H03K5/159
CPC分类号： H04L25/03885 , H04L25/03006 , H04L25/03057 , H04L2025/03535 , H04L2025/03681 , H04L2025/03707 , H04L2025/03745
摘要： A method for updating a tap coefficient of a decision feedback equalizer is provided. The method includes sampling a first input signal received by a sampler of a decision feedback equalizer. It is determined if an amplitude of the first input signal falls within a range defined between a first predetermined voltage level and a second predetermined voltage level. If the amplitude of the first input signal falls outside the range, a tap coefficient is updated to generate an updated tap coefficient that is fed back to adjust an amplitude of a second input signal received at an input end of the decision feedback equalizer. If the amplitude of the first input signal falls within the range, the tap coefficient is free from being updated.
摘要翻译：提供了一种用于更新判决反馈均衡器的抽头系数的方法。该方法包括对由判决反馈均衡器的采样器接收的第一输入信号进行采样。确定第一输入信号的振幅是否落在在第一预定电压电平和第二预定电压电平之间限定的范围内。如果第一输入信号的振幅超出该范围，则抽头系数被更新以产生被反馈的更新抽头系数，以调整在判决反馈均衡器的输入端接收的第二输入信号的幅度。如果第一输入信号的振幅落在该范围内，则抽头系数不被更新。

80. 发明授权

US08664622B2 System and method of ion beam source for semiconductor ion implantation 有权
标题翻译：用于半导体离子注入的离子束源的系统和方法
公开(公告)号：US08664622B2
公开(公告)日：2014-03-04
申请号：US13443994
申请日：2012-04-11
申请人： Chih-Hong Hwang , Chun-Lin Chang , Chi-Ming Yang , Chin-Hsiang Lin , Wen-Yu Ku
发明人： Chih-Hong Hwang , Chun-Lin Chang , Chi-Ming Yang , Chin-Hsiang Lin , Wen-Yu Ku
IPC分类号： H01J27/00 , A61N5/00 , G21G5/00
CPC分类号： C23C14/48 , H01J27/08 , H01J37/08 , H01J2237/082 , H01J2237/31701
摘要： An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.
摘要翻译：一种装置包括用于在离子注入过程中提供离子的电离室和电离室内的电子束源装置。电子束源装置包括具有多个用于在电场下在真空中产生电子的发射器的场致发射阵列。

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