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    • 71. 发明申请
    • METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR ALLOCATING RESOURCES IN WIRELESS COMMUNICATION NETWORK
    • 无线通信网络分配资源的方法,装置和计算机程序产品
    • WO2011069295A1
    • 2011-06-16
    • PCT/CN2009/075488
    • 2009-12-11
    • NOKIA CORPORATIONCHEN, TaoWANG, HaimingPENG, Tao
    • CHEN, TaoWANG, HaimingPENG, Tao
    • H04W72/04
    • H04W72/0406H04W52/383H04W72/085H04W72/12H04W74/002H04W74/085H04W76/14H04W84/18H04W92/18
    • The present application discloses a method, an apparatus and a computer program product for allocating resources for a Device-to-Device (D2D) direct communication user equipment in a wireless communication network, wherein the method comprise: transmitting a communication channel status report regarding Device-to-Device direct communication to a base station; receiving resource allocation instructions generated by the base station based on the communication channel status report; and performing Device-to-Device direct communication between user equipments on the allocated resources; the disclosed apparatus comprises transmitting means for transmitting a communication channel status report regarding Device-to-Device direct communication to a base station; receiving means for receiving resource allocation instructions generated by the base station based on the communication channel status report; and performing means for performing Device-to-Device direct communication between user equipments on the allocated resources. By using the method, apparatus and computer program product disclosed in the present application, resource sharing/allocation collision between the D2D user equipment and cellular user equipment can be effectively reduced and use rate of resources can be improved.
    • 本申请公开了一种用于在无线通信网络中为设备到设备(D2D)直接通信用户设备分配资源的方法,装置和计算机程序产品,其中所述方法包括:发送关于设备的通信信道状态报告 与设备直接通信到基站; 基于所述通信信道状态报告接收由所述基站生成的资源分配指令; 并在所分配的资源上对用户设备之间进行设备到设备的直接通信; 所公开的装置包括用于向基站发送关于设备到设备直接通信的通信信道状态报告的发送装置; 接收装置,用于基于所述通信信道状态报告接收由所述基站产生的资源分配指令; 以及执行用于在所分配的资源上的用户设备之间进行设备到设备直接通信的装置。 通过使用本申请中公开的方法,装置和计算机程序产品,可以有效地减少D2D用户设备和蜂窝用户设备之间的资源共享/分配冲突,并且可以提高资源的使用率。
    • 77. 发明申请
    • SHORT POINT-OF-INTEREST TITLE GENERATION
    • 短期利益标题生成
    • WO2010124424A1
    • 2010-11-04
    • PCT/CN2009/000475
    • 2009-04-29
    • GOOGLE INC.QIAN, JiangZHOU, VincentZHENG, BoZHENG, Yu
    • QIAN, JiangZHOU, VincentZHENG, BoZHENG, Yu
    • G06F17/30
    • G06F17/2745
    • Short POI titles are generated by removing unnecessary administrative area prefixes from existing POI titles and replacing necessary administrative area prefixes with shorter aliases. Administrative area prefixes are identified and analyzed to determine whether they are necessary. The analysis includes determining (1) whether the remainders with the prefixes excluded include a common suffix as a prefix, and (2) whether the remainders are unique in an applicable metropolis area. If a remainder does not include as a prefix a common suffix and is unique in the applicable metropolis area, the corresponding prefix is determined unnecessary and removed from the existing POI title to generate a short POI title. Otherwise, the corresponding prefix is determined necessary and replaced with a shorter alias to generate a short POI title.
    • 通过从现有POI标题中删除不必要的管理区域前缀,并用较短的别名替换必要的管理区域前缀来生成简短的POI标题。 对行政区域前缀进行识别和分析,以确定它们是否必要。 分析包括确定(1)排除前缀的余数是否包括作为前缀的公共后缀,以及(2)在适用的大都会区域中剩余部分是否是唯一的。 如果余数不包括作为前缀的公共后缀,并且在适用的大都市区域中是唯一的,则相应的前缀被确定为不必要的并且从现有POI标题中移除以生成短的POI标题。 否则,相应的前缀被确定为必需,并用较短的别名替换以生成短的POI标题。
    • 80. 发明申请
    • METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS
    • 用于制造基于多元素的多层厚层的方法
    • WO2010020065A1
    • 2010-02-25
    • PCT/CN2008/001488
    • 2008-08-19
    • LATTICE POWER (JIANGXI) CORPORATIONJIANG, FengyiWANG, LiMO, ChunlanFANG, Wenqing
    • JIANG, FengyiWANG, LiMO, ChunlanFANG, Wenqing
    • H01L33/30C23C16/34H01L33/04H01L21/205H01L21/365
    • H01L21/0262H01L21/0254H01L33/007H01L33/06
    • A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.
    • 通过使用氮化镓铟(InGaN)半导体材料制造量子阱的方法包括在反应器室中以第一预定温度在层状III-V族氮化物结构中制造势阱,通过将反应器中的In前体气体注入到 一种Ga前体气体。 该方法还包括在制造势阱之后,终止Ga前体气体,保持In前体气体的流动,并将反应器室中的温度升高到第二预定温度,同时调节In前体气体流速 从第一流量到第二流量。 此外,该方法包括在维持第二流量的同时在第二预定温度下退火和稳定势阱。 该方法还包括在恢复Ga前体气体的同时在第二预定温度下制造位于势阱上方的势垒。