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71. 发明专利

JP2013080960A Bonding wire for semiconductor and method of manufacturing the same 有权
标题翻译：用于半导体的接合线及其制造方法
公开(公告)号：JP2013080960A
公开(公告)日：2013-05-02
申请号：JP2013000747
申请日：2013-01-07
申请人： Nippon Steel Sumikin Materials Co Ltd , 新日鉄住金マテリアルズ株式会社
发明人： UNO TOMOHIRO , TERAJIMA SHINICHI , TATSUMI KOHEI
IPC分类号： H01L21/60 , B21C37/04 , B32B15/01 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L23/49
CPC分类号： C22C5/02 , B21C37/042 , B23K35/0272 , B23K2201/40 , B32B15/018 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L24/43 , H01L2224/05624 , H01L2224/05647 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85948 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01105 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/20751 , H01L2924/3862 , H01L2924/01046 , H01L2924/0102 , H01L2924/01049 , H01L2924/00015 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01013 , H01L2924/00014 , H01L2924/01057 , H01L2924/01058 , H01L2924/01024 , H01L2924/01039 , H01L2924/01026 , H01L2224/4516 , H01L2224/45155 , H01L2924/00 , H01L2924/013 , H01L2924/01006 , H01L2924/00012 , H01L2924/01033
摘要： PROBLEM TO BE SOLVED: To provide a bonding wire for a semiconductor element having high strength and high bending stiffness conforming to the trends of narrower pitches and thinner and longer wires, improved bondability at both the ball and wedge portions, and excellent industrial mass-productivity and usability in high speed bonding.SOLUTION: A bonding wire for semiconductor comprises an outer peripheral part 2 formed of a conductive metal, a core 1 made of an alloy formed mainly of the metal, and a diffusion layer 3 disposed between the core 1 and the outer peripheral part 2, the diffusion layer having a concentration gradient. Further, a bonding wire for semiconductor comprises a core 1 formed of a first metal having a conductivity or an alloy formed mainly of the first metal, an outer peripheral part 2 formed of a second metal having a conductivity different from that of the first metal of the core 1 or an alloy formed mainly of the second metal, and a diffusion layer 3 disposed between the core 1 and the outer peripheral part 2, the diffusion layer having a concentration gradient.
摘要翻译：要解决的问题：为了提供具有高的强度和高的弯曲刚度的半导体元件的接合线，其符合窄的间距和更薄和更长的线的趋势，改善了球和楔部两者的粘合性，以及优良的工业批量生产率和高速接合的可用性。解决方案：用于半导体的接合线包括由导电金属形成的外周部分2，由主要由金属形成的合金制成的芯部1和设置在芯部1和外周部分之间的扩散层3 如图2所示，扩散层具有浓度梯度。此外，用于半导体的接合线包括由具有导电性的第一金属或主要由第一金属形成的合金形成的芯1，由与第一金属的导电性不同的第二金属形成的外周部2 芯1或主要由第二金属形成的合金以及设置在芯1和外周部2之间的扩散层3，扩散层具有浓度梯度。版权所有（C）2013，JPO＆INPIT

72. 发明专利

JP5167068B2 Electronic member having a solder ball and solder bump 有权
公开(公告)号：JP5167068B2
公开(公告)日：2013-03-21
申请号：JP2008278877
申请日：2008-10-29
申请人：新日鉄住金マテリアルズ株式会社 , 日鉄住金マイクロメタル株式会社
发明人：孝之小林 , 勉佐々木 , 将元田中 , 勝一木村
IPC分类号： H01L21/60 , B23K35/14 , B23K35/26 , C22C13/00 , H05K3/34
CPC分类号： H01L2924/0002 , H01L2924/00

73. 发明专利

JP2013047446A Steel structure reinforcement method using carbon fiber material 有权
标题翻译：使用碳纤维材料的钢结构加固方法
公开(公告)号：JP2013047446A
公开(公告)日：2013-03-07
申请号：JP2012158970
申请日：2012-07-17
申请人： Nippon Steel & Sumitomo Metal , 新日鐵住金株式会社 , Nippon Steel Sumikin Materials Co Ltd , 新日鉄住金マテリアルズ株式会社
发明人： MORIMOTO MASASHI , MATSUISHI NAGAYUKI , YAMAMOTO YUJI , TOIDA SHUNICHI , KOBAYASHI AKIRA , HIDEKUMA YUYA
IPC分类号： E04G23/02 , E01D1/00 , E01D22/00 , E04C5/07
摘要： PROBLEM TO BE SOLVED: To enable a fatigue life to be effectively extended by reinforcing a member made of a steel material to be reinforced taking interface destruction due to fatigue of a reinforced carbon fiber material into consideration.SOLUTION: A steel structure reinforcement method for reinforcing a member by superposing and sticking carbon fiber sheets 3 over a part on which tensile force acts via adhesive members in a plurality of layers into a stepped shape includes: a step for calculating a fatigue design curve of a beam material 1 with a safety factor; a step for calculating fatigue exfoliation curves of the adhesive members at outside end parts 3a, 3c of the carbon fiber sheets 3 and joint parts 3b, 3d; a step for calculating intersection points when the fatigue design curve and the fatigue exfoliation curves are superposed on each other as design stresses at the outside end parts 3a, 3c of the adhesive members and the joint parts 3b, 3d; and a step for calculating a target reinforcement stress of the beam material 1 after reinforcing; and a step for setting the end positions of the carbon fiber sheets 3 and a reinforcing quantity such that the target reinforcement stress is within a range of design stress.
摘要翻译：要解决的问题：通过考虑由于增强的碳纤维材料的疲劳而加强由被加强的钢材制成的构件，从而使界面破坏，能够有效地延长疲劳寿命。解决方案：一种钢结构加固方法，用于通过将碳纤维片3叠加并粘贴在通过多个层中的粘合构件作用的拉伸力的部分上形成阶梯状而加强构件，包括：用于计算疲劳的步骤具有安全系数的梁材料1的设计曲线; 计算碳纤维片3和接合部3b，3d的外端部3a，3c处的粘合剂的疲劳剥离曲线的步骤; 当疲劳设计曲线和疲劳剥离曲线彼此重叠的粘合剂构件和接合部分3b，3d的外端部3a，3c处的设计应力时，计算交点的步骤; 以及用于计算加强后的梁材料1的目标加强应力的步骤; 以及设定碳纤维板3的端部位置的步骤和增强量，使得目标加强应力在设计应力的范围内。版权所有（C）2013，JPO＆INPIT

74. 发明专利

JP2013040373A METHOD FOR MANUFACTURING SiC WAFER 有权
标题翻译：制造SiC波形的方法
公开(公告)号：JP2013040373A
公开(公告)日：2013-02-28
申请号：JP2011177579
申请日：2011-08-15
申请人： Nippon Steel & Sumikin Materials Co Ltd , 新日鉄住金マテリアルズ株式会社 , Nippon Steel & Sumitomo Metal Corp , 新日鐵住金株式会社
发明人： KAMIMURA KENICHI , ITO TORU , KOJIMA KIYOSHI , ABE KOZO
IPC分类号： C25F3/30 , C25F7/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a SiC semiconductor which is widely applicable and achieves favorable grinding results.SOLUTION: The method for manufacturing a SiC wafer which electropolishes the SiC wafer, is provided where the HF concentration of an electrolysis solution is 0.001-10 wt.%, and the maximum current density Imax and an applied voltage Vat that time are preliminarily obtained from a relation between the applied voltage and the generated current density. When the current density I and the applied voltage V during electropolishing satisfy V
摘要翻译：要解决的问题：提供广泛应用的SiC半导体的制造方法，并获得良好的研磨结果。＆lt; P＆gt;解决方案提供电解溶液的HF浓度为0.001-10重量％，最大电流密度Imax和施加电压V 0 预先从施加电压和发生的电流密度之间的关系获得。当电解抛光期间的电流密度I和施加电压V满足V 0 时，施加电压以满足0.5Imax≤I≤Imax，并且当V≥V 0 ，施加电压以满足0.8Imax≤I≤Imax。版权所有（C）2013，JPO＆INPIT

75. 发明专利

JP2013014513A Spherical alumina powder 有权
标题翻译：球形铝粉
公开(公告)号：JP2013014513A
公开(公告)日：2013-01-24
申请号：JP2012206807
申请日：2012-09-20
申请人： Nippon Steel & Sumikin Materials Co Ltd , 新日鉄住金マテリアルズ株式会社
发明人： SHIMIZU ISAMU , TAKAMI HIDEKI , KASHIWABARA TAKAYUKI
IPC分类号： C01F7/02
摘要： PROBLEM TO BE SOLVED: To provide low-soda spherical alumina powder excellent in moisture resistance reliability, thermal conductivity, packing properties and wear resistance, and suitable as a filler.SOLUTION: In the spherical alumina powder sphered by thermal-spraying alumina raw material powder containing a soda component produced by a Bayer process into flame, the surface of the spherical alumina powder is provided with a silica coating layer using silica fine powder having the average particle diameter of
摘要翻译：要解决的问题：提供耐湿可靠性，导热性，包装性能和耐磨性优异的低苏打球形氧化铝粉末，并且适合作为填料。解决方案：在通过将含有通过拜耳法生产的苏打组分的氧化铝原料粉末热喷涂成火焰的球形氧化铝粉末中，使用具有二氧化硅细粉末的球形氧化铝粉末的表面设置二氧化硅涂层，所述二氧化硅涂层具有平均粒径<2μm，比表面积为10-25μm 2 / g，从球形氧化铝表面提取的提取物中的苏打含量常温下的粉末是≤40ppm。版权所有（C）2013，JPO＆INPIT

76. 发明专利

JP5117911B2 Structure containing ceramics and carbon fiber reinforced plastic 有权
公开(公告)号：JP5117911B2
公开(公告)日：2013-01-16
申请号：JP2008097374
申请日：2008-04-03
申请人：新日鉄住金マテリアルズ株式会社 , キヤノン株式会社
发明人：正人稲吉 , 裕二隈 , 裕士玉木 , 剛史内田 , 光夫西村
IPC分类号： B32B5/28 , B32B18/00

77. 发明专利

JP5100978B2 Dephosphorization purification apparatus and method of silicon 有权
公开(公告)号：JP5100978B2
公开(公告)日：2012-12-19
申请号：JP2005137638
申请日：2005-05-10
申请人：新日鉄住金マテリアルズ株式会社
发明人：等堂野前 , 正樹岡島
IPC分类号： C01B33/037

78. 发明专利

JP6399695B2 トンネルの剥落防止工法有权
公开(公告)号：JP6399695B2
公开(公告)日：2018-10-03
申请号：JP2014232095
申请日：2014-11-14
申请人：新日鉄住金マテリアルズ株式会社 , 東日本旅客鉄道株式会社
发明人：斉藤誠 , 宮尾巻治 , 古川武英 , 栗林健一
IPC分类号： E21D11/38 , E21D11/00

79. 发明专利

JPWO2017104153A1 半導体装置用ボンディングワイヤ审中-公开
公开(公告)号：JPWO2017104153A1
公开(公告)日：2018-09-27
申请号：JP2016068764
申请日：2016-06-24
申请人：新日鉄住金マテリアルズ株式会社 , 日鉄住金マイクロメタル株式会社
发明人：小山田哲哉 , 宇野智裕 , 小田大造 , 山田隆
IPC分类号： C22C9/06 , H01L21/60
CPC分类号： C22C9/06 , H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48247 , H01L2224/85439 , H01L2924/10253 , H01L2924/01028 , H01L2924/0103 , H01L2924/01049 , H01L2924/01078 , H01L2924/01046 , H01L2924/01005 , H01L2924/01015 , H01L2924/01012 , H01L2924/0105 , H01L2924/01031 , H01L2924/01032 , H01L2924/01202 , H01L2924/01204 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076
摘要：高い接合信頼性を確保しつつ、優れた耐キャピラリ摩耗性と表面疵耐性を有し、さらにボール形成性、ウェッジ接合性などの総合性能を満足する車載用デバイス用ボンディングワイヤに好適な、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層と、前記Pd被覆層の表面に形成されたCu表面層を有する半導体装置用ボンディングワイヤにおいて、Niを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、前記Pd被覆層の厚さが0.015〜0.150μmであり、前記Cu表面層の厚さが0.0005〜0.0070μmであることを特徴とする。

80. 发明专利

JP2018139293A 半導体装置用ボンディングワイヤ审中-公开
公开(公告)号：JP2018139293A
公开(公告)日：2018-09-06
申请号：JP2018071290
申请日：2018-04-03
申请人：日鉄住金マイクロメタル株式会社 , 新日鉄住金マテリアルズ株式会社
发明人：山田隆 , 小田大造 , 榛原照男 , 大石良 , 齋藤和之 , 宇野智裕
IPC分类号： C22C9/00 , C22C9/06 , C22C9/04 , H01L21/60
CPC分类号： B23K35/0227 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/00 , B32B15/01 , B32B15/018 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , C23C30/00 , C23C30/005 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/4382 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45118 , H01L2224/4512 , H01L2224/45147 , H01L2224/45155 , H01L2224/45169 , H01L2224/45173 , H01L2224/45178 , H01L2224/45541 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48824 , H01L2224/78 , H01L2224/78251 , H01L2224/85 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85444 , H01L2224/85464 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01052 , H01L2924/01057 , H01L2924/0665 , H01L2924/0705 , H01L2924/10253 , H01L2924/186 , Y10T428/12868 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/2495 , Y10T428/24967 , Y10T428/265 , H01L2924/01028 , H01L2924/0103 , H01L2924/01045 , H01L2924/01049 , H01L2924/01077 , H01L2924/01078 , H01L2924/01031 , H01L2924/0105 , H01L2924/01051 , H01L2924/01083 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00015 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/00014 , H01L2924/01014 , H01L2924/013 , H01L2924/00013 , H01L2924/20105 , H01L2924/01001 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/01027 , H01L2924/01047 , H01L2924/01013
摘要：【課題】Cu合金芯材と、その表面に形成されたPd被覆層とを有する半導体装置用ボンディングワイヤにおいて、高温におけるボール接合部の接合信頼性の向上とウェッジ接合性との両立を図る。【解決手段】Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有する半導体装置用ボンディングワイヤにおいて、前記ボンディングワイヤが高温環境下における接続信頼性を付与する元素を含み、下記(1)式で定義する耐力比が1.1〜1.6であることを特徴とする。耐力比=最大耐力/0.2%耐力 (1) 【選択図】なし

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