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    • 61. 发明申请
    • Integrated spiral inductor
    • 集成螺旋电感
    • US20050156700A1
    • 2005-07-21
    • US11079717
    • 2005-03-15
    • James Chang
    • James Chang
    • H01F17/00H01L23/522H01L27/02H01L27/08H03B5/12H03B5/36H03D7/16H03D7/18H03G1/00H03H11/12H03J1/00H03J3/04H03J3/08H03J3/18H03L7/10H03L7/23H04B1/26
    • H03L7/23H01F17/0006H01F17/0013H01F2017/0053H01F2021/125H01L23/5227H01L27/0248H01L27/08H01L2924/0002H01L2924/3011H03B5/364H03D7/161H03D7/18H03G1/0029H03H11/1291H03J1/0075H03J3/04H03J3/08H03J3/185H03J2200/10H03L7/10H01L2924/00
    • An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programable attenuation and a programable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters utilize multi track spiral inductors with shields to increase circuit Q. The filters are tuned using local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range. A differential crystal oscillator is advantageously used as a frequency reference. Differential signal transmission is advantageously used throughout the receiver. ESD protection is provided by a pad ring and ESD clamping structure that maintains signal integrity. Also provided are shunts at each pin to discharge ESD build up. The shunts utilize a gate boosting structure to provide sufficient small signal RF performance, and minimal parasitic loading.
    • 描述了基本上在单个CMOS集成电路上实现的具有信道选择和图像抑制的集成接收机。 接收机前端提供可编程衰减和可编程增益低噪声放大器。 频率转换电路有利地使用集成到衬底上的LC滤波器与图像抑制混合器结合,以提供足够的图像频率抑制。 过滤器调谐和电感Q补偿温度在芯片上执行。 滤波器利用具有屏蔽的多轨螺旋电感器来增加电路Q.使用本地振荡器调谐滤波器以调整替代滤波器,以及在滤波器组件值期间频率缩放至正被调谐的滤波器的滤波器。 结合滤波,频率规划提供了额外的镜像抑制。 片上本地振荡器信号产生方法的有利选择是通过PLL带外本地振荡和通过频带本地振荡器的直接合成。 PLL中的VCO使用控制电路居中,使调谐电容范围居中。 差分晶体振荡器有利地用作频率参考。 差分信号传输有利地用于整个接收机。 ESD保护由保护信号完整性的焊盘环和ESD钳位结构提供。 还提供每个引脚上的分流器,以放电ESD积聚。 分流器利用栅极升压结构来提供足够的小信号RF性能和最小的寄生负载。
    • 65. 发明授权
    • Memory device having a latching multiplexer and a multiplexer block
therefor
    • 具有锁存多路复用器及其多路复用器的存储器件
    • US5544101A
    • 1996-08-06
    • US219609
    • 1994-03-28
    • Theodore W. Houston
    • Theodore W. Houston
    • G11C17/00G11C7/10G11C11/408G11C11/413G11C11/417G11C7/00H03J3/04
    • G11C7/106G11C7/1051
    • A memory device (10) is provided which includes a memory array (12), a multiplexer block (14) and a control block (16). The memory array (12) is operable to provide a plurality of memory array outputs (28.sub.1 . . . 28.sub.n) responsive to a memory address (MEMORY ADDRESS). Each memory array output (28.sub.1 . . . 28.sub.n) represents a data state of a memory cell. The multiplexer block (14) comprises at least one latch block (30.sub.1 . . . 30.sub.i, 32.sub.1 . . . 32.sub.j, 34.sub.1, 34.sub.2, and 36) arranged in at least one stage. The multiplexer block is coupled to the plurality of memory array outputs (28.sub.1 . . . 28.sub.n). The multiplexer block (14) is operable to provide a multiplexer block output (38) representing a data state of a desired memory cell corresponding to the memory address (MEMORY ADDRESS) responsive to a plurality of multiplexer control signals (44.sub.1 . . . 44.sub.m). Each latch block is operable to receive a plurality of input signals, operable to retain a plurality of data states and operable to provide an output signal. A control block (16) is coupled to the memory array (12) and to the multiplexer block (14). The control block (16) is operable to determine from the memory address (MEMORY ADDRESS) whether the data state of the desired memory cell is retained by a latch block in the multiplexer block (14) and operable to generate the plurality of multiplexer control signals (44.sub.1 . . . 44.sub.m).
    • 提供了一种存储器件(10),其包括存储器阵列(12),多路复用器块(14)和控制块(16)。 存储器阵列(12)可操作以响应于存储器地址(存储器地址)来提供多个存储器阵列输出(281 ... 28n)。 每个存储器阵列输出(281 ... 28n)表示存储单元的数据状态。 多路复用器块(14)包括布置在至少一个级中的至少一个锁存块(301 ... 30i,321 ... ... 32j,341,342和36)。 多路复用器块耦合到多个存储器阵列输出(281 ... ... 28n)。 多路复用器块(14)可操作以响应于多个多路复用器控制信号(441 ... 44m)提供表示对应于存储器地址(存储器地址)的期望存储单元的数据状态的多路复用器块输出(38) 。 每个锁存块可操作以接收多个输入信号,可操作以保持多个数据状态并且可操作以提供输出信号。 控制块(16)耦合到存储器阵列(12)和多路复用器块(14)。 控制块(16)可操作以根据存储器地址(存储器地址)确定期望存储器单元的数据状态是否由多路复用器块(14)中的锁存块保留,并且可操作以产生多个多路复用器控制信号 (441.44m)。