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62. 发明专利

JP2685841B2 失效
公开(公告)号：JP2685841B2
公开(公告)日：1997-12-03
申请号：JP26389288
申请日：1988-10-21
IPC分类号： G06G7/60 , G06G7/163 , G06N3/063 , G11C11/54 , G11C11/56 , H01L21/331 , H01L27/10 , H01L29/73 , H01L29/737 , H03H11/52 , H03K19/177

63. 发明专利

JPH08293758A MONOLITHIC HBT TYPE ACTIVE TUNABLE BAND-PASS FILTER 失效
公开(公告)号：JPH08293758A
公开(公告)日：1996-11-05
申请号：JP8130296
申请日：1996-04-03
申请人： TRW INC
发明人： KEBUIN DABURIYUU KOBAYASHI
IPC分类号： H03H11/04 , H03H11/06 , H03H11/10 , H03H11/52
摘要： PROBLEM TO BE SOLVED: To provide an active tunable band-pass filter provided with a negative resistance circuit which generates the tunable amount of a negative resistance to a passive band-pass filter structure so as to compensate a resistance loss. SOLUTION: A negative resistance circuit 20 is provided with a bipolar transistor Q1 having a base connected to a passive filter structure through a shunt and a collector connected to a shunt guide element 32. A negative resistance is generated at the base of the transistor Q1 and impressed upon the passive filter structure. A rough Q-factor tuning circuit 36 is coupled with the emitter of the transistor Q1 and supplies a rough tuning amount of the negative resistance. In addition, a fine tuning circuit which supplies the fine tuning of the negative resistance is connected to the emitter terminal of the transistor Q1. The fine tuning is manually or automatically attained by means of a control circuit. Rough and fine tuning functions supply a tunable resistance which removes oscillations and compensates the variation of a resistance loss for realizing an improved Q-factor.

65. 发明专利

JPS62130012A NEGATIVE IMPEDANCE CIRCUIT 失效
公开(公告)号：JPS62130012A
公开(公告)日：1987-06-12
申请号：JP27111085
申请日：1985-12-02
申请人： ADVANTEST CORP
发明人： GOISHI AKIRA , SEYAMA MASAHIRO
IPC分类号： H03H11/52
摘要： PURPOSE:To obtain a circuit whose impedance shows a negative value by connecting an input terminal of the 1st and 2nd current mirror circuits to the 1st and 2nd current terminals and connecting an output terminal of the 1st and 2nd current mirror circuits to the input terminal. CONSTITUTION:An output circuit outputs a voltage nearly equal to a voltage given to an input terminal 13 to an output terminal 14 and the 1st and 2nd currents I1, I2 having a difference by a load current I0 flowing to the output terminal flow to current terminals 15, 16. Input terminals 31, 32 of current mirror circuits 12, 13 are connected respectively to the current terminals 15, 16 of the output circuit 11 and output terminals 33, 34 are connected to an input terminal 10 of the output circuit 11. Further, an output terminal 14 is connected to ground through a load 27 having an impedance Z0. The relation of I0=V0/Z=Vi/Z0, where Vi is an input voltage and V0 is an output voltage and further, the relation of I0=I1-I2 exists, and a current Ii flowing to the input terminal 10 is expressed as Ii=I2-I1. Thus, the relation of Vi/Ii=-Z exists and then a negative impedance is attained.

68. 发明专利

JPS5884515A NONLINEAR CIRCUIT 失效
公开(公告)号：JPS5884515A
公开(公告)日：1983-05-20
申请号：JP18417181
申请日：1981-11-16
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KOMODA TAKUYA
IPC分类号： H03H11/52 , G06G7/12 , G06G7/25 , H03G11/08
摘要： PURPOSE:To obtain a circuit having the lambda characteristics, by connecting a current mirror comprising PNP transistors(TRs) and a current mirror comprising NPN TRs in series and obtaining an output via a TR buffer from a connecting point at non-short-circuit part. CONSTITUTION:A current mirror A consists of TRs Q1, Q2 and a resistor(R) 1, the base and collector of the TRQ1 and the base of the TRQ2 are connected in common and one end of the R1 is connected therewith. A current mirror B consists of TRs Q3, Q4 and Rs 2, 4, the base and collector of the TRQ3 and the base of the TRQ4 are connected in common and the other end of the R1 is connected therewith. An output section C consists of a TRQ5 and an R3, and the collector of the TRQ5 is connected to a connecting point of the collector of the TRQ4 and the R3. Thus, the position of the top point of the lambda characteristics obtained at an output voltage V0 can be arbitrarily selected with the value of the R3. Further, a large top voltage can be realized from a lambda diode.

70. 发明专利

JPS55140315A NETWORK FOR SIMULATING LOW TEMPERATURE CHARACTERISTIC RESISTANCE 失效
公开(公告)号：JPS55140315A
公开(公告)日：1980-11-01
申请号：JP2818480
申请日：1980-03-07
申请人： HUGHES AIRCRAFT CO
发明人： ROBAATO ERU FUOWAADO
IPC分类号： H03H11/46 , H03H11/52 , H03H11/54

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