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61. 发明专利

JPS5417258B1 失效
公开(公告)号：JPS5417258B1
公开(公告)日：1979-06-28
申请号：JP2691172
申请日：1972-03-16
IPC分类号： G11C11/23 , H01J29/39 , H01J31/60 , H01L29/00 , G11C11/30 , G11C11/34
摘要： An electron beam addressable memory is disclosed in which information is stored as an electric charge in a multilayered memory target. The multilayered memory comprises a conductive layer, an insulating layer having a plurality of charge storage sites, a layer of n-type and a layer of p-type semiconductor material having a p-n junction therebetween. The method of writing causes charge to be stored at selected sites in the insulating layer. The method of reading causes the current through the p-n junction, which is reverse biased, to vary in magnitude depending upon whether or not the beam impinges on a charged site. The read and write electron beams are preferably of the same energy and a different voltage is applied to the conductive layer during reading than is applied during writing. In another embodiment, the conducting layer is omitted and the effect of different voltages applied to the conducting layer is produced by secondary emission from the insulating layer.

62. 发明专利

JPS5479524A MEMORY SYSTEM 失效
公开(公告)号：JPS5479524A
公开(公告)日：1979-06-25
申请号：JP14677777
申请日：1977-12-07
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： OOMURA KAZUMICHI
IPC分类号： G11C11/30 , G11C11/23 , G11C27/00
摘要： PURPOSE:To constitute a memory system which can superpose and store different information by storing information while making the desired element in the desired pattern on the surface of a substrate, by scanning on the surface by charged particle beams, and by reading out information over an energy analysis of generated X rays. CONSTITUTION:Memory substrate 1 employs a Si singel-crystal substrate and Al ions are implanted as large as fixed area at a fixed voltage via the mask previously supplied with required information. Next, As ions are implanted as large as fixed area at a fixed voltage via the mask stored with another information. In this way, the memory part is provided with four regions where no ion, either Al or As and both As and A are injected. To read information, deflective scanning on memory substrate 1 by electron beam 2 is done, and X ray 3 generated through the irradiation of this electron beam is detected by wavelength-dispersive X-ray spectroscope 4, thereby separating different information.

64. 发明专利

JPS5023582A 失效
公开(公告)号：JPS5023582A
公开(公告)日：1975-03-13
申请号：JP5376474
申请日：1974-05-14
IPC分类号： H01L31/12 , G11C11/23 , G11C11/42 , G11C13/04 , G11C17/00 , G11C17/04 , H01L21/339 , H01L21/8247 , H01L27/146 , H01L29/762 , H01L29/788 , H01L29/792 , H01L31/10

66. 发明专利

JPS4964368A 失效
公开(公告)号：JPS4964368A
公开(公告)日：1974-06-21
申请号：JP6208573
申请日：1973-06-04
IPC分类号： H04N5/74 , G02B27/50 , G02F1/03 , G02F1/05 , G11C11/23 , H01J31/08 , H01J31/12

68. 发明专利

JPS4898850A 失效
公开(公告)号：JPS4898850A
公开(公告)日：1973-12-14
申请号：JP3112972
申请日：1972-03-30
IPC分类号： G11C11/42 , G02F1/015 , G11B7/00 , G11B7/30 , G11C11/23 , G11C13/04 , G11C27/00 , H01L21/336 , H01L21/8247 , H01L27/146 , H01L29/788 , H01L29/792 , H04N7/00

69. 发明授权

EP0391698B1 Apparatus for reproducing charge latent image 失效
标题翻译：一种用于电荷潜象的再现。
公开(公告)号：EP0391698B1
公开(公告)日：1994-07-27
申请号：EP90303636.6
申请日：1990-04-04
申请人： VICTOR COMPANY OF JAPAN, LTD.
发明人： Takanashi, Itsuo , Nakagaki, Shintaro , Shinonaga, Hirohiko , Asakura, Tsutou , Furuya, Masato , Suzuki, Tetsuji
IPC分类号： G03G13/22 , G03G15/044 , H04N5/30 , G02F1/135 , G02F1/13 , G11C11/23
CPC分类号： G11C7/005 , H04N5/2259 , H04N5/30 , H04N5/80

70. 发明授权

EP0046552B1 Monolithisch integrierte Schaltung mit zu- und/oder abschaltbaren Schaltungsteilen 有权
标题翻译：具有可以开/关的电路的集成式单片电路
公开(公告)号：EP0046552B1
公开(公告)日：1988-06-08
申请号：EP81106345.2
申请日：1981-08-14
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Oldham, William G., Prof.
IPC分类号： H01L27/10 , G11C11/23
CPC分类号： G11C17/12 , G11C13/047 , H01L27/105

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