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61. 发明专利

JPH01239083A APPARATUS FOR PULLING UP SINGLE CRYSTAL AND METHOD THEREFOR 失效
公开(公告)号：JPH01239083A
公开(公告)日：1989-09-25
申请号：JP6338388
申请日：1988-03-18
申请人： HITACHI LTD
发明人： FUJIOKA KAZUMASA , NAKAYAMA HISASHI , OYANAGI HITOMI
IPC分类号： C30B15/16
摘要： PURPOSE:To accurately detect the incision direction of a laser light in a single crystal pulling-up apparatus to radiate a laser light to the molten liquid around a crystal column, by vertically osciillating and rotating a position-detection member attached to a pull-up rod and radiating a reference light coaxial to the laser light to a plurality of points. CONSTITUTION:A molten liquid is filled in a crucible and a single crystal is pulled up while radiating a laser light to the molten liquid around a crystal column. In the above apparatus, a position-detection member 19 and a seed crystal 6 are attached to the pull-up rod 4. The rod 4 is lowered and a reference light 17 coaxial to the laser light is radiated to the inner side of the top face of the position-detection member 19. The pull-up rod 4 is pulled up by a distance (h) to place the position-detection member 19 to the position shown by the dotted line and the reference light 17 is radiated to the outer side of the top face of the position-detection member 19. The incision angle theta of the reference light 17 can be calculated by the formula to enable the determination of the radiation angle of the reference light 17 or the laser light and enable the accurate determination of the radiation position of the laser light on the surface of the molten liquid.

62. 发明专利

JPS62191489A PRODUCTION OF OXIDE SINGLE CRYSTAL 失效
公开(公告)号：JPS62191489A
公开(公告)日：1987-08-21
申请号：JP3225886
申请日：1986-02-17
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： ASHIDA NORIYUKI , TAKAHASHI KENICHI , MIYAZAKI TAKESHI , YAMAUCHI KAZUHISA
IPC分类号： C30B13/24 , C30B13/22 , C30B15/16 , C30B29/22
摘要： PURPOSE:To make temperature distribution of the interface between a solid and a liquid at the growth end of the single crystal uniform and reduce crystal defects, by using laser beams as a heat source for an oxide in the Czochralski process. CONSTITUTION:A polycrystalline or powdery oxide raw material 4, e.g. LiNbO3 or LiTaO3, is irradiated with laser beam 2, e.g. YAG laser, etc.., in the Czochralski or floating zone melting process. In the process, the raw material is irradiated with the laser beams 2 passing through a seed crystal 1 before starting the growth of the single crystal and through the seed crystal 1 and a grown seed crystal 7 after starting the growth of the single crystal. Thereby the oxide raw material 4 is melted so that the temperature in the interface 6 between the solid and the liquid may be uniform.

63. 发明专利

JPS5954694A Method for growth of single crystal 失效
标题翻译：单晶生长方法
公开(公告)号：JPS5954694A
公开(公告)日：1984-03-29
申请号：JP16611082
申请日：1982-09-24
申请人： Fujitsu Ltd
发明人： TAKIZAWA RITSUO , HONDA KOUICHIROU , OKAMURA SHIGERU
IPC分类号： C30B15/18 , C30B15/16 , C30B15/22 , H01L21/208
CPC分类号： C30B15/16
摘要： PURPOSE:To obtain a right cylindrical single crystal having uniform diameter by the pulling of single crystal using Czochralskii method, by pulling the crystal while irradiating the meniscus line between the pulled crystal and the molten liquid with laser beam, and controlling the pulling speed at a constant level. CONSTITUTION:A single crystal is pulled and grown from the molten liquid 23 for the growth of crystal in the crucible 21 by Czochralski method using a seed crystal 24. In the above process, the growth is carried out under the irradiation of the laser beam 35 to the meniscus line 33 through the quartz inspection window 31 to suppress the abnormal growth and to melt the laterally grown excessive single crystal. The pulling speed of the crystal is adjusted to somewhat lower than the standard level to obtain a rather large crystal and keep only an extremely small part of the crystal always to molten state by irradiation with the laser beam.
摘要翻译：目的：通过使用Czochralskii法拉伸单晶来获得具有均匀直径的正圆柱形单晶，通过在用激光束照射拉晶和熔融液之间的弯液面之间拉动晶体，并将拉伸速度控制在恒定水平。构成：通过使用晶种24的切克劳斯法（Czochralski method）从熔融液23中拉出并生长单晶，以便通过切克劳斯基法在坩埚21中生长晶体。在上述过程中，在激光束35的照射下进行生长通过石英检查窗31到弯液面33，以抑制异常生长并熔化横向生长的过度单晶。将晶体的拉伸速度调节到略低于标准水平，以获得相当大的晶体，并且通过用激光束照射将晶体总是保持在熔融状态的极小部分。

64. 发明专利

JPS5355486A PROCESS FOR PREPARING SEMICONDUCTOR SINGLE CRYSTAL WEB 失效
公开(公告)号：JPS5355486A
公开(公告)日：1978-05-19
申请号：JP12953877
申请日：1977-10-28
申请人： SIEMENS AG
发明人： UORUFUGANGU KERAA
IPC分类号： C30B15/00 , C30B15/08 , C30B15/16 , C30B15/34 , H01L21/208

65. 发明专利

JP2013155069A Sapphire single crystal growing apparatus 审中-公开
标题翻译： SAPPHIRE单晶生长装置
公开(公告)号：JP2013155069A
公开(公告)日：2013-08-15
申请号：JP2012016196
申请日：2012-01-30
申请人： Kyocera Corp , 京セラ株式会社
发明人： MURASE YU
IPC分类号： C30B29/20 , C30B15/16
摘要： PROBLEM TO BE SOLVED: To provide a sapphire single crystal growing apparatus with few commingling of impurities into the sapphire single crystal to be grown although the apparatus is configured relatively inexpensively.SOLUTION: An afterheater member 20 is arranged above a crucible 10, generates heat together with the crucible 10 by passing an electric current through an induction coil 32 to heat a sapphire single crystal body 15 pulled from the crucible 10. The afterheater member 20 is equipped with an exothermic part 22 comprising at least one kind of tantalum (Ta), tungsten (W) and molybdenum (Mo) as a main component, and a coating layer 24 free of oxygen and coating the exothermic part 22. With such configuration, the exothermic part 22 is prevented from oxidation while the exothermic part 22 is composed of relatively inexpensive high melting point metals.
摘要翻译：要解决的问题：为了提供一种蓝宝石单晶生长装置，尽管该装置相对便宜地被配置，但是将蓝宝石单晶中杂质混合很少。蓝宝石单晶生长装置在坩埚10上方布置有一个后热元件20，一起产生热量通过使电流通过感应线圈32来加热从坩埚10拉出的蓝宝石单晶体体15的坩埚10。后热器部件20配备有包含至少一种钽（Ta）的放热部22，以钨（W）和钼（Mo）为主要成分的涂层层24和不含氧的涂层24.涂覆放热部分22.通过这种结构，放热部分22被防止氧化，而放热部分22由相对廉价的高熔点金属。

66. 发明专利

JPH04310593A APPARATUS FOR PULLING UP SINGLE CRYSTAL SILICON INGOT 失效
公开(公告)号：JPH04310593A
公开(公告)日：1992-11-02
申请号：JP7134191
申请日：1991-04-04
申请人： NEC CORP
发明人： TOMIYAMA TOMOHIKO
IPC分类号： C30B15/16 , H01L21/208
摘要： PURPOSE:To improve the homogeneity of internal defect density by placing plural lamp heaters for heating a single crystal ingot to be pulled up above a crucible, and regulating the temperature of the ingot to a higher temperature toward the lower part and a lower temperature toward the upper part. CONSTITUTION:An Si raw material introduced into a quartz crucible 2 is melted at a prescribed temperature and pulled up as a single crystal Si ingot 3 from the resultant molten Si 1 at a prescribed speed while rotating a pulling up rod 4 having a seed crystal attached thereto. Plural infrared ray lamps 5 and surface thermometers 6 installed above a quartz crucible 2 are used and outputs are regulated based on the surface temperature of the single crystal Si ingot 3 measured with the plural surface thermometers 6 so that the single crystal ingot 3 may be at a higher temperature toward the lower part and a lower temperature toward the upper part. Thereby, since the single crystal ingot 3 is cooled while holding nearly a uniform temperature distribution in its cross- sectional direction, homogeneity of internal defect density caused by temperature inhomogeneity in cooling is improved.

67. 发明专利

JPH02149490A CRYSTAL GROWING DEVICE 失效
公开(公告)号：JPH02149490A
公开(公告)日：1990-06-08
申请号：JP25614788
申请日：1988-10-11
申请人： NEC CORP
发明人： KITAKATA MAKOTO
IPC分类号： C30B15/16 , C30B29/06 , H01L21/208
摘要： PURPOSE:To drastically improve the uniformity of oxygen contained in ingot and the control of outer diameter than in ordinary method by heating locally the outer peripheral part of the ingot with laser beam irradiation and at the same time, monitoring the scattering light in a silicon single crystal growing device by pulling-up method. CONSTITUTION:In the crystal growing device growing a single crystal ingot 1 from molten silicon 3, the vicinity of contact part between the outer peripheral part of the ingot 1 and the molten silicon 3 is locally heated by the laser emitted from a laser beam oscillator 2. The strength distribution of scattering lights 48, 48' of laser beam is measured at plural measuring points which enable the measurement of the outer diameter of ingot, and moreover, the temp. measurement is allowed to be carried out by using Roman spectrum.

68. 发明专利

JPS6230691A PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPS6230691A
公开(公告)日：1987-02-09
申请号：JP17076385
申请日：1985-08-02
申请人： TOSHIBA CORP
发明人： MIKAMI HITOSHI
IPC分类号： C30B29/42 , C30B15/16 , C30B15/22 , C30B27/02 , H01L21/18 , H01L21/208
摘要： PURPOSE:To obtain a single crystal of good quality having a uniform diameter, by irradiating a peripheral part of a solid-liquid interface of the single crystal to be pulled up or a melt surface in contact therewith with laser beams to control the crystal diameter in producing the single crystal by the pulling up method. CONSTITUTION:A crucible 2 is housed in a high pressure vessel 1, and a GaAs melt 3 is formed in the crucible 2. The surface thereof is covered with a liquid capsule material 4. A seed crystal 5 is then dipped in the melt 3 and pulled up at a given pulling up speed while rotating the crucible 2 to grow the aimed GaAs single crystal 6. In the process, the peripheral part of the solid-liquid interface of the GaAs single crystal 6 or the melt surface in contact therewith is irradiated with laser beams 9 from a CO2 laser source 8. Thereby, a local high-temperature part is formed to surround the pulled up crystal 6, and the crystal growth in the transverse direction is suppressed to obtain the aimed single crystal of uniform diameter.

69. 发明专利

JPS60186497A METHOD FOR PULLING UP SINGLE CRYSTAL 失效
公开(公告)号：JPS60186497A
公开(公告)日：1985-09-21
申请号：JP4361284
申请日：1984-03-06
申请人： SUMITOMO ELECTRIC INDUSTRIES , NIPPON TELEGRAPH & TELEPHONE
发明人： NAKAGAWA MASAHIRO , KAWASAKI AKIHISA , KOTANI TOSHIHIRO , NAKAI RIYUUSUKE , NANISHI YASUSHI
IPC分类号： C30B15/16
摘要： PURPOSE:To form a single crystal having uniform dislocation density distribution, by heating the single crystal during pulling up with an infrared heater provided near a furnace wall in pulling up the single crystal by the Czochralshi (CZ) method. CONSTITUTION:At least one infrared heater 10 is provided near a furnace wall at the top in a pulling up furnace, and the heater 10 is divided into the upper and lower parts with a paraboloidal reflecting plate 12 having a heat source, e.g. a tungsten coil 11, as a focus at the rear thereof. The opening angle (alpha) of the upper and lower parts is adjusted by a hingle 13. A single crystal 6 is heated with the infrared heater 10 while being pulled up from the surface of a raw material melt 3 by a seed crystal 5. Thus, the top central part of the single crystal 6 during the pulling up is heated to suppress the heat conduction in the axial direction of the crystal causing the dislocation in the central part, and dislocation in the central part of the crystal is reduced to give the aimed single crystal 6 having uniform dislocation density distribution.

70. 发明专利

JPS58172288A GROWTH DEVICE FOR CRYSTAL 失效
公开(公告)号：JPS58172288A
公开(公告)日：1983-10-11
申请号：JP5215182
申请日：1982-03-30
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： OOTA TAKAO , UEHA MASANOBU
IPC分类号： C30B15/18 , C30B15/16 , H01L21/208
摘要： PURPOSE:To grow a single crystal having a desired diameter satisfactorily in a growth device for a crystal, by a pulling method by irradiating a laser ray to the melt near the inside wall of a crucible. CONSTITUTION:Polycrystalline Si is packed in a crucible 1 and is heated to an Si melt 11 by a heater 2. Thereafter, the degree of heating with the heater 2 is regulated to drop the temp. of the melt 11 down to the temp. adequate for seeding. A laser ray is generated from a YAG laser light source 8 or the like and is passed through an optical fiber 9 so as to be irradiated to the melt 11 near the inside wall of the crucible 1 through an introducing port 10 for the laser ray. In parallel with the irradiation, the seed crystal 12 at the forward end of a crystal pulling shaft 5 is immersed in the melt and is pulled gradually. Since the shaft 5 and a shaft 3 for supporting the crucible are turned in mutually opposite directions by driving mechanisms 6 and 4 respectively, the melt 11 is irradiated and heated uniformly, and the crystallization of the melt near the inside wall of the crucible is suppressed effectively.

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