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61. 发明申请

US20110255388A1 PATTERN WRITING SYSTEM AND METHOD AND ABNORMALITY DIAGNOSING METHOD 有权
标题翻译：模式书写系统与方法与异常诊断方法
公开(公告)号：US20110255388A1
公开(公告)日：2011-10-20
申请号：US13084870
申请日：2011-04-12
申请人： Yoshikuni GOSHIMA , Akira Noma
发明人： Yoshikuni GOSHIMA , Akira Noma
IPC分类号： G11B9/10 , G11B20/18
CPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/78 , H01J37/3174 , H01J2237/31776 , H01J2237/31793 , H01J2237/31796
摘要： Reflected and scattered electrons generated by emitting an electron beam onto a substrate are detected by a detecting unit. The product of the area (SN) and the irradiation time (tN) of the Nth shot in a predetermined measurement unit obtained from writing data is computed by a computing unit. The value obtained by accumulating an instructed equivalent value in the predetermined measurement unit and the value obtained by integrating the signal (DN) from the detecting unit in the predetermined measurement unit are compared and determined by a comparing unit to determine whether or not abnormality occurs in the irradiation amount of the electron beam.
摘要翻译：通过检测单元检测通过将电子束发射到衬底上而产生的反射和散射的电子。通过计算单元计算从写入数据获得的预定测量单位中的第N个镜头的面积（SN）和照射时间（tN）的乘积。通过累积预定测量单位中的指示等效值获得的值和通过对来自预定测量单位的来自检测单元的信号（DN）进行积分而获得的值由比较单元进行比较和确定，以确定是否发生异常电子束的照射量。

62. 发明授权

US07476881B2 Charged beam drawing apparatus and charged beam drawing method 有权
标题翻译：充电光束拉制装置和带电束束拉制法
公开(公告)号：US07476881B2
公开(公告)日：2009-01-13
申请号：US11560127
申请日：2006-11-15
申请人： Kiyoshi Hattori , Kenji Ohtoshi , Tomohiro Iijima , Yoshiaki Onimaru , Hayato Kimura , Tateki Watanabe
发明人： Kiyoshi Hattori , Kenji Ohtoshi , Tomohiro Iijima , Yoshiaki Onimaru , Hayato Kimura , Tateki Watanabe
IPC分类号： G21K5/04
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： There is provided a charged beam drawing apparatus which includes main/sub two-stage deflectors, divides a main deflection drawing region on a sample into sub deflection drawing regions determined by the deflection width of the sub deflector, selects one of the sub deflection drawing regions by use of the main deflector and draws shots in the selected sub deflection drawing region by use of the sub deflector. A sub deflection driving unit includes a sub deflection sensitivity correction circuit, a sub deflection astigmatic correction circuit, an adder circuit which adds an output of the sub deflection sensitivity correction circuit and an output of the sub deflection astigmatic correction circuit, and a deflection amplifier which additionally applies an output of the adder circuit to the sub deflector.
摘要翻译：提供了一种带电束的拉伸装置，其包括主/次两级偏转器，将样品上的主偏转绘制区域划分成由次偏转器的偏转宽度确定的次偏转绘图区域，选择一个子偏转绘图区域通过使用主偏转器，并且通过使用副偏转器在所选择的亚偏转绘图区域中绘制照片。副偏转驱动单元包括副偏转灵敏度校正电路，副偏转像散校正电路，将副偏转灵敏度校正电路的输出和副偏转像散校正电路的输出相加的加法电路，以及偏转放大器，另外将加法器电路的输出施加到副偏转器。

63. 发明申请

US20080169433A1 Electron beam exposure apparatus and method for cleaning the same 有权
标题翻译：电子束曝光装置及其清洗方法
公开(公告)号：US20080169433A1
公开(公告)日：2008-07-17
申请号：US12077153
申请日：2008-03-17
申请人： Hiroshi Yasuda , Yoshihisa Ooae
发明人： Hiroshi Yasuda , Yoshihisa Ooae
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.
摘要翻译：提供一种电子束曝光装置，用于通过用电子枪产生的电子束曝光在安装在晶片台上的样品上形成所需图案。电子束曝光装置包括：将还原气体注入到容纳电子枪和晶片台的列中的供给装置; 以及执行控制的控制单元，使得将还原气体注入到所述列中持续预定时间段。有机污染与通过照射电子束从还原气体生成的H结合，然后蒸发。还包括将臭氧气体注入塔的供给装置。控制单元可以执行控制，使得除了注入还原气体之外，将臭氧气体注入到塔中持续预定的时间段。

64. 发明申请

US20070072099A1 Method of aligning a particle-beam-generated pattern to a pattern on a pre-patterned substrate 失效
标题翻译：将粒子束生成图案与预图案化衬底上的图案对准的方法
公开(公告)号：US20070072099A1
公开(公告)日：2007-03-29
申请号：US11233616
申请日：2005-09-23
申请人： Jeffrey Sullivan , Tony Young
发明人： Jeffrey Sullivan , Tony Young
IPC分类号： G03F9/00 , G21G5/00 , G03C5/00 , A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F9/7015 , G03F9/7088 , H01J2237/31793 , Y10S430/143
摘要： A significant improvement in the alignment of a particle-beam-generated pattern relative to a pre-existing pattern present on a substrate has been accomplished using optical measurement to register the particle beam to the pre-existing pattern. Use of a position fiducial which can be accurately measured by both an optical microscope and a particle beam axis is used to align a pre-existing pattern with a particle-beam-generated pattern during writing of the particle-beam-generated pattern. Registration of the pre-existing pattern to the fiducial and registration of the particle beam axis to the fiducial periodically during production of the particle-beam-generated pattern continually provides an improvement in the overall alignment of the pattern being created to the pre-existing pattern on the substrate. The improved method of alignment can be used to correct for drift, or thermal expansion, or gravitational sag, by way of example.
摘要翻译：已经使用光学测量来实现粒子束生成图案相对于存在于衬底上的预先存在的图案的对准的显着改进，以将粒子束注册到预先存在的图案。使用可以通过光学显微镜和粒子束轴两者精确测量的位置基准来使用在粒子束产生的图案的写入期间将预先存在的图案与粒子束产生的图案对准。在生成粒子束生成图案期间，将预先存在的图案注册到基准和粒子束轴的基准周期性地定期地连续地提供了所创建的图案与预先存在的图案的整体对准的改进在基板上。改进的对准方法可以用于校正漂移或热膨胀或重力下垂的例子。

65. 发明申请

US20060076508A1 System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device 有权
标题翻译：用于校正用于光刻和观察的带电粒子束的控制条件的系统，方法和程序，以及用于制造半导体器件的程序和方法
公开(公告)号：US20060076508A1
公开(公告)日：2006-04-13
申请号：US11239428
申请日：2005-09-30
申请人： Tetsuro Nakasugi , Takumi Ota
发明人： Tetsuro Nakasugi , Takumi Ota
IPC分类号： G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.
摘要翻译：一种用于校正带电粒子束光刻条件的系统，包括：误差计算单元，被配置为计算带电粒子束的照明位置的误差，带电粒子束由通过初始校正参数校正的光刻条件控制; 临时校正单元，被配置为计算临时校正参数以将所述误差减小到最小; 以及主校正单元，被配置为通过使用临时校正参数和初始校正参数执行统计处理来计算校正光刻条件的主要校正参数。

66. 发明申请

US20040250776A1 Sample-setting moving stage, manufacturing apparatus for circuit pattern, and inspection apparatus for circuit pattern 审中-公开
标题翻译：采样设置移动台，电路图案制造装置和电路图案检查装置
公开(公告)号：US20040250776A1
公开(公告)日：2004-12-16
申请号：US10809795
申请日：2004-03-26
发明人： Masaki Mizuochi , Yoshimasa Fukushima , Tadayuki Kubo
IPC分类号： C23C016/00
CPC分类号： G03F7/70858 , G03F7/70841 , H01J37/20 , H01J2237/2001 , H01J2237/31793
摘要： To realize the temperature control of the sample-setting portion and enable to perform exposure or inspection of samples accurately while preventing the generation of dust, deterioration of the degree of vacuum and contamination in a vacuum atmosphere. (Means of Solving the Problems) The top table 21 or sample holding mechanism 7 is equipped with a temperature sensor 23, the flow path 251 of the heat-exchanging medium 241 is provided inside the non-moving fixed side guide member 181, and the temperature of the sample-setting portion is controlled through the control of the medium 241. Since the flow path 251 of the heat-exchanging medium 241 is located in a stationary portion, it is possible to control the temperature of the sample-setting portion while preventing the generation of dust due to flexible piping, damage to vacuum pump and contamination in a vacuum atmosphere caused by the heat-exchanging medium 241.
摘要翻译：为了实现样品设定部的温度控制，能够准确地进行样品的曝光或检查，同时防止灰尘的产生，真空度的劣化和真空气氛中的污染。（解决问题的方法）顶台21或样品保持机构7配备有温度传感器23，热交换介质241的流路251设置在不动的固定侧引导构件181的内部，通过控制介质241来控制样品设定部分的温度。由于热交换介质241的流路251位于静止部分中，因此可以控制样品设定部分的温度，同时防止由于柔性管道产生灰尘，真空泵的损坏和由热交换介质241引起的真空气氛中的污染。

67. 发明授权

US06794657B2 Magnetic shunt assembly for an exposure apparatus 失效
标题翻译：用于曝光设备的磁分流器组件
公开(公告)号：US06794657B2
公开(公告)日：2004-09-21
申请号：US10000305
申请日：2001-11-30
申请人： Michael R. Sogard
发明人： Michael R. Sogard
IPC分类号： G21K510
CPC分类号： H01J37/09 , H01J37/20 , H01J2237/0264 , H01J2237/31793
摘要： A magnetic shunt assembly (12) for an exposure apparatus (10) includes a magnetic shunt assembly (12). The apparatus (10) includes an optical assembly (24)(26), a stage (44), a first mover assembly (16) that moves the stage (44) in a first gap (37). The first mover assembly (16) is surrounded by a magnetic field. The magnetic shunt assembly (12) is positioned near the optical assembly (24)(26) approximately between the optical assembly (24)(26) and the mover assembly (16). The magnetic shunt assembly (12) is made of a material having a relatively high magnetic permeability. The magnetic shunt assembly (12) can provide a low magnetic reluctance path that redirects at least a portion of the magnetic field from the first mover assembly (16) away from the gap (37).
摘要翻译：用于曝光设备（10）的磁分路组件（12）包括磁分路组件（12）。装置（10）包括光学组件（24），阶段（44），第一移动器组件（16），其在第一间隙（37）中移动平台（44）。第一移动器组件（16）被磁场包围。磁分路组件（12）位于光学组件（24）（26）附近，大致在光学组件（24）（26）和移动器组件（16）之间。磁分路组件（12）由具有相对较高磁导率的材料制成。磁分路组件（12）可以提供低磁阻磁路，其将来自第一移动器组件（16）的磁场的至少一部分重定向远离间隙（37）。

68. 发明授权

US6362489B2 Charged-particle-beam microlithography methods exhibiting reduced thermal deformation of mark-defining member 失效
标题翻译：显示标记限定部件的热变形的带电粒子束微光刻法
公开(公告)号：US6362489B2
公开(公告)日：2002-03-26
申请号：US76955801
申请日：2001-01-24
申请人： NIPPON KOGAKU KK
发明人： OKINO TERUAKI
IPC分类号： H01J37/304 , G21K4/00 , G21K1/02
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/31793
摘要： Methods and apparatus are disclosed for reducing thermal deformation of "upstream" marks (as used for alignment and/or calibration) situated on a reticle or on a reticle plane (e.g., on the reticle stage), thereby facilitating more accurate transfer of the reticle pattern to a sensitized substrate (e.g., semiconductor wafer) using a charged particle beam (e.g., electron beam). The charged particle beam illuminates an upstream mark situated on the reticle or on a reticle plane and projects an image of the illuminated upstream mark onto a corresponding "downstream" mark situated on a substrate plane. A shield is situated upstream of the upstream mark and serves to block downstream passage of the charged particle beam except to illuminate the upstream mark or a portion of the upstream mark. The upstream mark can be situated on the reticle or on a mark member situated in the reticle plane.
摘要翻译：公开了用于减少位于掩模版或掩模版平面（例如，在标线片台上）上的“上游”标记（用于对准和/或校准）的热变形的方法和装置，从而有助于更准确地传递光罩使用带电粒子束（例如，电子束）对致敏衬底（例如，半导体晶片）进行图案化。带电粒子束照亮位于掩模版或标线平面上的上游标记，并将照亮的上游标记的图像投影到位于基板平面上的相应的“下游”标记。屏蔽位于上游标记的上游，用于阻止带电粒子束的下游通过，除了照亮上游标记或上游标记的一部分。上游标记可以位于掩模版上或位于掩模版平面中的标记构件上。

69. 发明申请

US20010052578A1 Charged-particle-beam microlithography methods exhibiting reduced thermal deformation of mark-defining member 失效
标题翻译：显示标记限定部件的热变形的带电粒子束微光刻法
公开(公告)号：US20010052578A1
公开(公告)日：2001-12-20
申请号：US09769558
申请日：2001-01-24
发明人： Teruaki Okino
IPC分类号： G21G005/00 , A61N005/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/31793
摘要： Methods and apparatus are disclosed for reducing thermal deformation of nullupstreamnull marks (as used for alignment and/or calibration) situated on a reticle or on a reticle plane (e.g., on the reticle stage), thereby facilitating more accurate transfer of the reticle pattern to a sensitized substrate (e.g., semiconductor wafer) using a charged particle beam (e.g., electron beam). The charged particle beam illuminates an upstream mark situated on the reticle or on a reticle plane and projects an image of the illuminated upstream mark onto a corresponding nulldownstreamnull mark situated on a substrate plane. A shield is situated upstream of the upstream mark and serves to block downstream passage of the charged particle beam except to illuminate the upstream mark or a portion of the upstream mark. The upstream mark can be situated on the reticle or on a mark member situated in the reticle plane.
摘要翻译：公开了用于减少位于掩模版或掩模版平面（例如，在标线片台上）上的“上游”标记（用于对准和/或校准）的热变形的方法和装置，从而有助于更准确地传递光罩使用带电粒子束（例如，电子束）对致敏衬底（例如，半导体晶片）进行图案化。带电粒子束照亮位于掩模版或标线平面上的上游标记，并将照亮的上游标记的图像投影到位于基板平面上的相应的“下游”标记。屏蔽位于上游标记的上游，用于阻止带电粒子束的下游通过，除了照亮上游标记或上游标记的一部分。上游标记可以位于掩模版上或位于掩模版平面中的标记构件上。

70. 发明授权

US06207962B1 Charged-particle-beam microlithography apparatus and methods exhibiting reduced thermal deformation of mark-defining member 失效
标题翻译：带电粒子束微光刻装置和表现出标记限定部件的热变形减小的方法
公开(公告)号：US06207962B1
公开(公告)日：2001-03-27
申请号：US09326484
申请日：1999-06-04
申请人： Teruaki Okino
发明人： Teruaki Okino
IPC分类号： G21K400
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/31793
摘要： Methods and apparatus are disclosed for reducing thermal deformation of “upstream” marks (as used for alignment and/or calibration) situated on a reticle or on a reticle plane (e.g., on the reticle stage), thereby facilitating more accurate transfer of the reticle pattern to a sensitized substrate (e.g., semiconductor wafer) using a charged particle beam (e.g., electron beam). The charged particle beam illuminates an upstream mark situated on the reticle or on a reticle plane and projects an image of the illuminated upstream mark onto a corresponding “downstream” mark situated on a substrate plane. A shield is situated upstream of the upstream mark and serves to block downstream passage of the charged particle beam except to illuminate the upstream mark or a portion of the upstream mark. The upstream mark can be situated on the reticle or on a mark member situated in the reticle plane.
摘要翻译：公开了用于减少位于掩模版或掩模版平面（例如，在标线片台上）上的“上游”标记（用于对准和/或校准）的热变形的方法和装置，从而有助于更准确地传递光罩使用带电粒子束（例如，电子束）对致敏衬底（例如，半导体晶片）进行图案化。带电粒子束照亮位于掩模版或标线平面上的上游标记，并将照亮的上游标记的图像投影到位于基板平面上的相应的“下游”标记。屏蔽位于上游标记的上游，用于阻止带电粒子束的下游通过，除了照亮上游标记或上游标记的一部分。上游标记可以位于掩模版上或位于掩模版平面中的标记构件上。

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