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62. 发明专利

JP2014169206A Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：基于Ga2O3的单晶基板及其制造方法
公开(公告)号：JP2014169206A
公开(公告)日：2014-09-18
申请号：JP2013042043
申请日：2013-03-04
申请人： Tamura Seisakusho Co Ltd , 株式会社タムラ製作所
发明人： SASAKI KOHEI
IPC分类号： C30B29/16
CPC分类号： C30B13/10 , C30B13/24 , C30B13/30 , C30B13/32 , C30B29/16
摘要： PROBLEM TO BE SOLVED: To provide a GaO-based single crystal substrate comprising a GaO-based single crystal, and having a heightened resistance, while suppressing deterioration of a crystal quality, and to provide a manufacturing method thereof.SOLUTION: In one embodiment, a manufacturing method of a GaO-based single crystal substrate includes steps for: adding Fe to a GaO-based raw material, and raising a GaO-based single crystal 5 containing Fe having a higher concentration than a donor impurity intermingled from the GaO-based raw material; and cutting out the GaO-based single crystal substrate from the GaO-based single crystal 5.
摘要翻译：要解决的问题：提供包含GaO基单晶的GaO基单晶衬底，并且具有提高的电阻，同时抑制晶体质量的劣化，并提供其制造方法。解决方案：在一个实施例中， GaO系单晶衬底的制造方法包括以下步骤：将Fe添加到GaO基原料中，并且提高含有比由GaO基混合的施主杂质浓度高的Fe的GaO基单晶5 原材料; 并从GaO基单晶5切出GaO基单晶衬底。

63. 发明专利

JP2008184374A Silicon crystal material and its manufacture process 有权
标题翻译：硅晶体及其制造工艺
公开(公告)号：JP2008184374A
公开(公告)日：2008-08-14
申请号：JP2007021044
申请日：2007-01-31
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： SOGO SHINJI , UEDA RYOSUKE
IPC分类号： C30B29/06 , C30B13/04
CPC分类号： C30B29/06 , C30B13/285 , C30B13/32 , C30B15/22
摘要： PROBLEM TO BE SOLVED: To provide a silicon crystal material which is manufactured by the CZ method, used for a material rod for the manufacture of silicon single crystals by the FZ method and has a support part with which the material is fitted in the crystal growth furnace of the FZ method without the need for machining. SOLUTION: The silicon crystal material manufactured by the CZ silicon crystal manufacturing method has a support part 3 formed in the CZ silicon crystal manufacturing method and serving for growing a single crystal in a crystal manufacturing apparatus by the FZ method as well as shoulder 5, straight body 2, tail 6. The seed crystal used for the silicon crystal manufacture by the CZ method constitutes the support part. Its manufacturing method comprises forming a protrusion or a dent around the outer circumference of body 2 or a dent on shoulder 5 of body 2. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过CZ方法制造的硅晶体材料，其用于通过FZ方法制造单晶硅材料棒，并具有安装材料的支撑部分 FZ方法的晶体生长炉无需加工。解决方案：通过CZ硅晶体制造方法制造的硅晶体材料具有以CZ硅晶体制造方法形成的支撑部分3，用于通过FZ方法在晶体制造装置中生长单晶，并且肩部 5，直体2，尾部6.用于通过CZ方法制造的硅晶体的晶种构成支撑部分。其制造方法包括在主体2的外周或身体2的肩部5上形成突起或凹陷。（C）2008，JPO＆INPIT

64. 发明专利

JPS60191089A Manufacture of single crystal thin film 失效
标题翻译：单晶薄膜的制造
公开(公告)号：JPS60191089A
公开(公告)日：1985-09-28
申请号：JP4631984
申请日：1984-03-08
申请人： Sharp Corp
发明人： MAEKAWA SHINJI
IPC分类号： C30B13/06 , C30B13/24 , C30B13/32
CPC分类号： C30B13/32
摘要： PURPOSE:To manufacture efficiently the titled single crystal thin film by rotating relative by a substrative substrate for supporting a non-single crystal thin film and an energy beam, and moving simultaneously both substrate and beam in the radial direction, melting the non-single crystal thin film with the energy beam, and scanning the thin film spirally. CONSTITUTION:A substrate 5 on which a non-single crystal thin film is formed is placed on a supporting stand 6 which is rotatable and uniaxially movable in synchronization with the rotation. A laser beam 7 is irradiated to the substrate 5 which is rotated and moved in the radial direction by the supporting stand 6, and the thin film is spirally scanned from the central part of the non-single crystal thin film to the outer side. The non-single crystal thin film is melted and recrystallized to form a single crystal thin film in this way.
摘要翻译：目的：为了通过用于支撑非单晶薄膜和能量束的基底相对旋转来有效地制造标题单晶薄膜，并同时沿径向方向同时移动基板和光束，熔化非单晶具有能量束的薄膜，并且螺旋地扫描薄膜。构成：其上形成有非单晶薄膜的基板5被放置在与旋转同步地可旋转并且可单轴移动的支撑台6上。激光束7照射到通过支撑台6沿径向旋转移动的基板5，并且将薄膜从非单晶薄膜的中心螺旋地扫描到外侧。以这种方式使非单晶薄膜熔融并重结晶形成单晶薄膜。

65. 发明授权

US10639721B2 Systems and methods for additive manufacturing and repair of metal components 有权
公开(公告)号：US10639721B2
公开(公告)日：2020-05-05
申请号：US15382411
申请日：2016-12-16
申请人： Georgia Tech Research Corporation
发明人： Suman Das , Rohan Bansal , Justin Gambone
IPC分类号： B22F7/06 , B33Y70/00 , B33Y30/00 , B33Y50/02 , C30B13/24 , C30B29/52 , B22F5/00 , B22F5/04 , B23P6/00 , B29C64/153 , B22F3/105 , B33Y10/00 , C30B13/28 , C30B13/32 , C30B19/08 , C30B19/10 , B33Y80/00 , B29L31/08
CPC分类号： B22F7/062 , B22F3/1055 , B22F5/009 , B22F5/04 , B23P6/007 , B29C64/153 , B33Y10/00 , B33Y30/00 , B33Y50/02 , B33Y70/00 , C30B13/24 , C30B13/28 , C30B13/32 , C30B19/08 , C30B19/10 , C30B29/52 , B22F2003/1056 , B22F2003/1057 , B22F2007/068 , B29L2031/08 , B33Y80/00 , Y02P10/295
摘要： Scanning Laser Epitaxy (SLE) is a layer-by-layer additive manufacturing process that allows for the fabrication of three-dimensional objects with specified microstructure through the controlled melting and re-solidification of a metal powders placed atop a base substrate. SLE can be used to repair single crystal (SX) turbine airfoils, for example, as well as the manufacture functionally graded turbine components. The SLE process is capable of creating equiaxed, directionally solidified, and SX structures. Real-time feedback control schemes based upon an offline model can be used both to create specified defect free microstructures and to improve the repeatability of the process. Control schemes can be used based upon temperature data feedback provided at high frame rate by a thermal imaging camera as well as a melt-pool viewing video microscope. A real-time control scheme can deliver the capability of creating engine ready net shape turbine components from raw powder material.

66. 发明授权

US09970124B2 Single crystal production apparatus and single crystal production method 有权
公开(公告)号：US09970124B2
公开(公告)日：2018-05-15
申请号：US15107095
申请日：2015-03-13
申请人： Shin Akutsu
发明人： Shin Akutsu
IPC分类号： C30B13/16 , C30B13/24 , C30B13/22 , C30B13/32 , C30B29/66 , C30B13/28
CPC分类号： C30B13/24 , C30B13/16 , C30B13/22 , C30B13/285 , C30B13/32 , C30B29/66
摘要： A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

67. 发明申请

US20170145586A1 SYSTEM AND METHOD FOR SINGLE CRYSTAL GROWTH WITH ADDITIVE MANUFACTURING 审中-公开
公开(公告)号：US20170145586A1
公开(公告)日：2017-05-25
申请号：US14949298
申请日：2015-11-23
申请人： Hobart Brothers Company
发明人： Zhigang Xiao
IPC分类号： C30B13/24 , C30B13/16 , C30B13/32 , B33Y70/00 , C30B29/52 , C30B29/68 , B33Y10/00 , B33Y30/00 , C30B13/06 , C30B19/08
CPC分类号： C30B13/24 , B22F3/1028 , B22F3/1055 , B22F2003/1056 , B22F2999/00 , B23K9/044 , B23K26/0604 , B23K26/0734 , B23K26/342 , B33Y10/00 , B33Y30/00 , C30B13/06 , C30B13/16 , C30B13/32 , C30B19/08 , C30B29/52 , C30B29/68 , Y02P10/295 , B22F2203/11 , B22F2202/07 , B22F3/1017
摘要： Present embodiments include an additive manufacturing tool configured to receive a metallic material and to supply a plurality of droplets to a part at a work region of the part, wherein each droplet of the plurality of droplets comprises the metallic material and a heating system comprising a primary laser system configured to generate a primary laser beam to heat a molten zone of a substrate of the part and a secondary laser system configured to generate a secondary laser beam to heat a transition zone of the substrate of the part, wherein the molten zone and the work region are colocated, and wherein the transition zone is disposed about the molten zone.

68. 发明申请

US20160017512A1 Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译： Ga2O3单晶基板及其制造方法
公开(公告)号：US20160017512A1
公开(公告)日：2016-01-21
申请号：US14772885
申请日：2014-02-26
申请人： TAMURA CORPORATION
发明人： Kohei SASAKI
IPC分类号： C30B13/10 , C30B13/32 , C30B13/30 , C30B29/16
CPC分类号： C30B13/10 , C30B13/24 , C30B13/30 , C30B13/32 , C30B29/16
摘要： Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).
摘要翻译：提供一种包含Ga 2 O 3基单晶的Ga 2 O 3系单晶衬底，其具有高电阻，同时防止晶体质量的降低及其制备方法。根据本发明的一个实施方案，制备方法包括在Ga2O3基原料中添加Fe的同时生长Ga 2 O 3基单晶，所述Ga 2 O 3系单晶（5）的浓度高于的掺杂在Ga 2 O 3类原料中的施主杂质，从Ga 2 O 3系单晶（5）切出Ga 2 O 3系单晶衬底。

69. 发明申请

US20120115316A1 Crystallization apparatus, crystallization method, and method of manufacturing organic light-emitting display device, which use sequential lateral solidification 审中-公开
标题翻译：结晶装置，结晶方法以及使用顺序侧向固化的有机发光显示装置的制造方法
公开(公告)号：US20120115316A1
公开(公告)日：2012-05-10
申请号：US13317693
申请日：2011-10-26
申请人： Cheol-Ho Park
发明人： Cheol-Ho Park
IPC分类号： H01L21/20 , B05C9/12 , H01L21/268
CPC分类号： H01L21/268 , B23K26/0673 , B23K26/0853 , C30B13/22 , C30B13/32 , C30B29/06 , H01L21/02532 , H01L21/02686 , H01L27/1285
摘要： A crystallization apparatus, which uses sequential lateral solidification (SLS) and crystallizes an amorphous silicon layer formed on a substrate, includes a laser generating device, a first optical system, a second optical system, and a path switching member. The laser generating device is configured to emit a laser beam. The first optical system is configured to process the laser beam emitted from the laser generating device and to irradiate the processed laser beam onto the substrate. The second optical system is parallel to the first optical system and is configured to process the laser beam emitted from the laser generating device and to irradiate the processed laser beam onto the substrate. The path switching member is configured to switch a path of the laser beam emitted from the laser generating device and to alternately distribute the laser beam to the first and second optical systems.
摘要翻译：使用顺序侧向固化（SLS）并结晶形成在基板上的非晶硅层的结晶装置包括激光产生装置，第一光学系统，第二光学系统和路径切换部件。激光发生装置被配置为发射激光束。第一光学系统被配置为处理从激光产生装置发射的激光束并将经处理的激光束照射到衬底上。第二光学系统与第一光学系统平行，并被配置为处理从激光产生装置发射的激光束并将经处理的激光束照射到衬底上。路径切换构件被配置为切换从激光产生装置发射的激光束的路径，并且将激光束交替地分配到第一和第二光学系统。

70. 发明申请

US20100157404A1 LASER TREATMENT APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：激光治疗装置及制造半导体器件的方法
公开(公告)号：US20100157404A1
公开(公告)日：2010-06-24
申请号：US12719899
申请日：2010-03-09
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： G02B26/12 , G02B26/10
CPC分类号： H01L21/02691 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/08 , B23K26/082 , B23K26/0821 , C30B13/32 , G02B26/101 , G02B26/105 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01S5/4025
摘要： A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an fθ lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed. The number of optical systems is not limited; any number of optical systems is allowed as long as a means for supplying a plurality of laser beams is provided.
摘要翻译：提供一种激光治疗装置，其能够在大基板的整个表面上将激光束照射到要形成TFT的位置以实现结晶，从而形成具有高晶粒直径的晶体半导体膜吞吐量。激光治疗装置包括激光振荡装置，用于会聚准直透镜或柱面透镜等激光束的透镜，用于改变激光束的光路的固定镜，用于径向扫描激光的第一可动镜梁在二维方向，和一个f＆thetas; 用于在激光束扫描的情况下保持扫描速度恒定的透镜。这些结构部件被统称为一个光学系统。图1所示的激光治疗装置 1具有其中放置五个这样的光学系统的结构。光学系统的数量不受限制; 只要提供用于供给多个激光束的装置，就允许任何数量的光学系统。

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