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61. 发明授权

US07349066B2 Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence 有权
标题翻译：用于执行基于模型的光学邻近校正因子分解邻域影响的装置，方法和计算机程序产品
公开(公告)号：US07349066B2
公开(公告)日：2008-03-25
申请号：US11122220
申请日：2005-05-05
申请人： Markus Franciscus Antonius Eurlings , Thomas Laidig , Uwe Hollerbach
发明人： Markus Franciscus Antonius Eurlings , Thomas Laidig , Uwe Hollerbach
IPC分类号： G03B27/70 , G03B27/42 , G06F17/50
CPC分类号： G03F1/36
摘要： Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimizing a mask pattern. However, conventional MOPC techniques do not account for influence from neighboring features on a mask. This influence may be factored in the following manner—first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighboring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimized accordingly. This process may be repeated until the mask pattern is further optimized.
摘要翻译：基于模型的光学邻近校正（MOPC）偏置技术可用于优化掩模图案。然而，传统的MOPC技术不能解释掩模上相邻特征的影响。这种影响可以以以下方式考虑：首先，从目标图案生成预测图案，并且选择可以确定偏置的多个评估点。接下来，为每个评估点生成一组多变量方程，每个方程表示相邻特征对掩模的影响。求解等式以确定每个评估点的偏差量，并相应地优化掩模。可以重复该过程，直到掩模图案进一步优化。

62. 发明申请

US20070042277A1 Method and apparatus for performing model-based layout conversion for use with dipole illumination 有权
标题翻译：用于与偶极照明一起使用的基于模型的布局转换的方法和装置
公开(公告)号：US20070042277A1
公开(公告)日：2007-02-22
申请号：US11588326
申请日：2006-10-27
申请人： Duan-Fu Hsu , Kurt Wampler , Markus Antonius Eurlings , Jang Chen , Noel Corcoran
发明人： Duan-Fu Hsu , Kurt Wampler , Markus Antonius Eurlings , Jang Chen , Noel Corcoran
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70441 , G03F7/70466
摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
摘要翻译：一种产生用于多次曝光光刻成像过程的互补掩模的方法。该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

63. 发明授权

US07175940B2 Method of two dimensional feature model calibration and optimization 有权
公开(公告)号：US07175940B2
公开(公告)日：2007-02-13
申请号：US10266922
申请日：2002-10-09
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

64. 发明申请

US20050271953A1 Optical proximity correction method utilizing phase-edges as sub-resolution assist features 有权
标题翻译：利用相位边缘作为子分辨率辅助特征的光学邻近校正方法
公开(公告)号：US20050271953A1
公开(公告)日：2005-12-08
申请号：US11188858
申请日：2005-07-26
申请人： Douglas Broeke , J. Chen
发明人： Douglas Broeke , J. Chen
IPC分类号： G03F1/00 , G03F1/26 , G03F1/34 , H01L21/027
CPC分类号： G03F1/34 , G03F1/26 , G03F1/36
摘要： A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.
摘要翻译：一种光刻掩模，用于将形成在掩模中的图案光学转移到基板上并且用于否定光学邻近效应。掩模包括要印刷在基板上的多个可分辨特征，以及至少一个不可分辨的光学邻近校正特征，其中不可分辨的光学邻近校正特征是相位边缘。

65. 发明申请

US20050134822A1 Optimized polarization illumination 有权
标题翻译：优化极化照明
公开(公告)号：US20050134822A1
公开(公告)日：2005-06-23
申请号：US10921878
申请日：2004-08-20
申请人： Robert Socha , Donis Flagello , Steve Hansen
发明人： Robert Socha , Donis Flagello , Steve Hansen
IPC分类号： G03F7/20 , H01L21/027 , G03B27/72
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70341 , G03F7/70566 , G03F7/70616
摘要： Disclosed concepts include a method of optimizing polarization of an illumination of a pattern to be formed in a surface of a substrate. Polarized illumination is optimized by determining an illumination intensity for at least one point on an illuminator for at least two polarization states, determining image log slope for the at least one point on the illuminator for the at least two polarization states, determining a maximum image log slope (ILS) where the ILS is near zero for the at least one point on the illuminator, and selecting an optimal polarization state corresponding to the at least two polarization states that minimizes an ILS for the at least one point on the illuminator. This may be repeated for a plurality of points on the illuminator.
摘要翻译：公开的概念包括优化待形成在衬底的表面中的图案的照明的偏振的方法。通过确定至少两个偏振状态的照明器上的至少一个点的照明强度来确定极化照明，确定用于至少两个偏振状态的照明器上的至少一个点的图像对数斜率，确定最大图像记录斜率（ILS），其中ILS对于照明器上的至少一个点接近于零，并且选择对应于使得照明器上的至少一个点的ILS最小化的至少两个偏振状态的最佳极化状态。对于照明器上的多个点可以重复这一点。

66. 发明授权

US06881523B2 Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features 有权
标题翻译：光栅接近校正方法利用划格梯杆作为辅助分辨率辅助功能
公开(公告)号：US06881523B2
公开(公告)日：2005-04-19
申请号：US10096536
申请日：2002-03-13
申请人： Bruce W. Smith
发明人： Bruce W. Smith
IPC分类号： G03F1/00 , G03F1/36 , H01L21/027 , G03F9/00
CPC分类号： G03F1/36
摘要： A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.
摘要翻译：一种光刻掩模，用于将形成在所述掩模中的图案光学转移到基板上并且用于否定光学邻近效应。掩模包括要印刷在基底上的多个可分辨特征，其中多个可分辨特征中的每一个具有沿第一方向延伸的纵向轴线; 以及一对不可分辨的光学邻近校正特征，其设置在所述多个可分辨特征中的两个之间，其中所述一对不可分辨的光学邻近校正特征具有在第二方向上延伸的纵向轴线，其中所述纵向轴线的第一方向多个可分辨特征的多个不可分辨光学邻近校正特征的纵向轴线的第二方向正交。

67. 发明授权

US06875545B2 Method of removing assist features utilized to improve process latitude 有权
标题翻译：消除辅助功能的方法，以改善过程的纬度
公开(公告)号：US06875545B2
公开(公告)日：2005-04-05
申请号：US10305364
申请日：2002-11-27
申请人： Markus Franciscus Antonius Eurlings , Jang Fung Chen , Duan-Fu Stephen Hsu
发明人： Markus Franciscus Antonius Eurlings , Jang Fung Chen , Duan-Fu Stephen Hsu
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G02B31/00
CPC分类号： G03F7/70125 , G03F1/36 , G03F1/70 , G03F7/70441 , G03F7/70466
摘要： A method of transferring a lithographic pattern onto a substrate by use of a lithographic apparatus. The method includes the steps of: (1) defining features to be printed on the substrate; (2) determining which of the features require assist features to be disposed adjacent thereto in order for the features to be printed within defined resolution limits; (3) generating a mask containing the features to be printed and the assist features; (4) performing a first illumination process so as to print the features on the substrate, the first illumination process resulting in the partial printing of the assist features on the substrate; and (5) performing a second illumination process so as to reduce the amount of the assist features printed on the substrate; the second illumination process entails the step of performing a quadrapole illumination.
摘要翻译：通过使用光刻设备将光刻图案转印到基板上的方法。该方法包括以下步骤：（1）定义要印刷在基底上的特征; （2）确定哪些特征要求辅助特征与其邻近设置，以使特征被打印在限定的分辨率限度内; （3）产生包含要印刷的特征和辅助特征的掩模; （4）执行第一照明处理以便在所述基板上打印所述特征，所述第一照明处理导致所述辅助特征部分地印刷在所述基板上; 和（5）执行第二照明处理以减少印刷在基板上的辅助特征量; 第二照明处理需要执行四极照明的步骤。

68. 发明申请

US20030064298A1 Optical proximity correction method utilizing phase-edges as sub-resolution assist features 有权
标题翻译：利用相位边缘作为子分辨率辅助特征的光学邻近校正方法
公开(公告)号：US20030064298A1
公开(公告)日：2003-04-03
申请号：US10152686
申请日：2002-05-23
申请人： ASML MASKTOOLS, B.V.
发明人： Douglas Van Den Broeke , J. Fung Chen
IPC分类号： G03F009/00 , G06F017/50 , G03C005/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/36
摘要： A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.
摘要翻译：一种光刻掩模，用于将形成在掩模中的图案光学转移到基板上，并且用于否定光学邻近效应。掩模包括要印刷在基板上的多个可分辨特征，以及至少一个不可分辨的光学邻近校正特征，其中不可分辨的光学邻近校正特征是相位边缘。

69. 发明授权

US08632930B2 Method and apparatus for performing dark field double dipole lithography (DDL) 有权
标题翻译：用于进行暗场双偶极子光刻（DDL）的方法和装置
公开(公告)号：US08632930B2
公开(公告)日：2014-01-21
申请号：US13155259
申请日：2011-06-07
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/36
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
摘要翻译：一种产生用于暗场双偶极成像过程的互补掩模的方法。该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

70. 发明授权

US08521481B2 Method, program product and apparatus for modeling resist development of a lithography process 有权
标题翻译：方法，程序产品和设备，用于建模光刻工艺的抗蚀剂开发
公开(公告)号：US08521481B2
公开(公告)日：2013-08-27
申请号：US11896292
申请日：2007-08-30
申请人： Edita Tejnil
发明人： Edita Tejnil
IPC分类号： G06F7/60 , G06F17/10 , G06F17/50 , G03F1/00
CPC分类号： G03F7/705
摘要： A method of generating a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; and defining a model equation representing the imaging performance of the optical imaging system and the process, where the model equation includes a resist performance component, and the resist performance component includes a non-linear model of the resist performance.
摘要翻译：一种生成用于模拟光学成像系统的成像性能的模型的方法。该方法包括以下步骤：定义光学成像系统和由光学成像系统利用的过程; 并且定义表示光学成像系统和过程的成像性能的模型方程，其中模型方程式包括抗蚀剂性能成分，并且抗蚀剂性能成分包括抗蚀剂性能的非线性模型。

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