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61. 发明申请

US20120186519A1 PLASMA DOPING METHOD AND APPARATUS 审中-公开
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20120186519A1
公开(公告)日：2012-07-26
申请号：US13358277
申请日：2012-01-25
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： C23C16/50
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。通过压力调节阀将真空容器内的压力保持在规定值。将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

62. 发明申请

US20120115317A1 PLASMA DOPING METHOD AND APPARATUS THEREOF 有权
标题翻译：等离子喷涂方法及其设备
公开(公告)号：US20120115317A1
公开(公告)日：2012-05-10
申请号：US13291186
申请日：2011-11-08
申请人： Tomohiro OKUMURA , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
发明人： Tomohiro OKUMURA , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
IPC分类号： H01L21/223 , C23C16/455 , C23C16/458 , C23C16/50
CPC分类号： H01J37/32412 , H01L21/2236 , H01L31/18
摘要： In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.
摘要翻译：在等离子体焰炬单元中，具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部，并且在其周边设置有黄铜块。当气体被供应到圆柱形腔室中时，向导体杆供应高频电力，并且在圆柱形腔室中产生等离子体，使得等离子体照射基材。

63. 发明授权

US07666770B2 Method of controlling impurity doping and impurity doping apparatus 失效
标题翻译：控制杂质掺杂和杂质掺杂装置的方法
公开(公告)号：US07666770B2
公开(公告)日：2010-02-23
申请号：US10570787
申请日：2004-09-06
申请人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/42
CPC分类号： H01L21/265
摘要： A method is provided for controlling a dose amount of dopant to be doped into an object to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of the object, the amount of ions having dopant in plasma that collide with the object, and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of the object, and a dose amount by ions from the determined amount of ions containing dopant that collide with the object; and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
摘要翻译：提供了一种方法，用于控制掺杂到等离子体掺杂中待处理物体中的掺杂剂的剂量。根据该方法，掺杂控制由以下处理形成：确定物体的温度，与物体相撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体的温度由中性气体计算剂量，以及从确定量的与物体碰撞的掺杂剂的离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

64. 发明申请

US20090233383A1 Plasma Doping Method and Apparatus 审中-公开
标题翻译：等离子体掺杂法和装置
公开(公告)号：US20090233383A1
公开(公告)日：2009-09-17
申请号：US11884924
申请日：2006-02-14
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

65. 发明授权

US07547619B2 Method of introducing impurity, device and element 有权
标题翻译：引入杂质，器件和元素的方法
公开(公告)号：US07547619B2
公开(公告)日：2009-06-16
申请号：US10526999
申请日：2003-09-19
申请人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama
发明人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama
IPC分类号： H01L21/42 , H01L21/26
CPC分类号： H01L21/2236
摘要： A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other film sticking at the surface, the present method and apparatus first removes the oxidized film and other film using at least one means selected from among the group consisting of a means for irradiating the surface of solid substance with plasma, a means for irradiating the surface of solid substance with gas and a means for dipping the surface of solid substance in a reductive liquid; and then, attaches or introduces a certain desired particle. The way of attaching, or introducing, a particle is bringing a particle-containing gas to make contact to the surface, which surface has been made to be free of the oxidized film and other film. Thus, the particle is attached or introduced to the surface, or the vicinity, of solid substance. The component devices are those manufactured taking advantage of the above method or apparatus.
摘要翻译：引入杂质的方法和用于引入杂质的装置在较浅的轮廓中容易地形成杂质层。还公开了利用这些方法或装置制造的部件装置。当将材料引入具有在表面附着的氧化膜或其它膜的固体物质时，本方法和装置首先使用选自以下的至少一种方法除去氧化膜和其它膜：照射装置具有等离子体的固体物质的表面，用气体照射固体表面的装置和将固体物质表面浸入还原液中的装置; 然后，附加或引入某个所需的粒子。附着或引入颗粒的方法是使含颗粒的气体与表面接触，该表面已经被制成没有氧化膜和其它膜。因此，将颗粒附着或引入固体物质的表面或附近。部件装置是利用上述方法或装置制造的装置。

66. 发明授权

US07510667B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07510667B2
公开(公告)日：2009-03-31
申请号：US11397626
申请日：2006-04-05
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , C23F4/00 , Y02E50/30
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the antenna, and a second high-frequency power supply supplies a high-frequency power of a 100 kHz to 20 MHz. A refrigerant supply unit is provided for supplying a refrigerant flow to the antenna, and an electrically conductive sheet is provided between the antenna and the antenna cover. The electrically conductive sheet has a surface that is parallel to the substrate electrode and is larger than an opposing surface of the antenna.
摘要翻译：等离子体处理装置包括真空容器，用于支撑基板的基板电极和与基板电极相对设置且被绝缘天线盖覆盖的天线。第一高频电源向天线提供30MHz至3GHz频率的高频功率，而第二高频电源提供100kHz至20MHz的高频功率。设置制冷剂供给单元，用于向天线供给制冷剂流，在天线和天线罩之间设置导电片。导电片具有平行于衬底电极并且大于天线的相对表面的表面。

67. 发明授权

US07465407B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07465407B2
公开(公告)日：2008-12-16
申请号：US10649670
申请日：2003-08-28
申请人： Mitsuo Saitoh , Tomohiro Okumura , Ichiro Nakayama
发明人： Mitsuo Saitoh , Tomohiro Okumura , Ichiro Nakayama
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , C23C16/5096 , H01J37/32376
摘要： In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to be processed at a pressure in a vicinity of an atmospheric pressure. The method includes processing a part of the object to be processed with a plasma in a state where an area of a surface of a potentially controlled second electrode, arranged in a position opposite to the plasma source via the object to be processed, is made superposed on the object to be processed smaller than an area of a surface of the plasma source superposed on the object to be processed.
摘要翻译：在用于向第一电极供给电力的等离子体处理方法中，使第一电极具有接地电位，或者使第一电极具有浮置电位，同时向布置在待处理物体附近的等离子体源供给气体在大气压力附近的压力下。该方法包括在等离子体处理待处理物体的一部分的状态，其中经由待处理物体布置在与等离子体源相反的位置的潜在受控的第二电极的表面的面积被叠加对待处理的物体小于叠加在待处理物体上的等离子体源的表面的面积。

68. 发明申请

US20080142931A1 Method of Impurity Introduction, Impurity Introduction Apparatus and Semiconductor Device Produced with Use of the Method 有权
标题翻译：杂质介绍，杂质介绍使用该方法生产的装置和半导体装置
公开(公告)号：US20080142931A1
公开(公告)日：2008-06-19
申请号：US10599205
申请日：2005-03-17
申请人： Yuichiro Sasaki , Ichiro Nakayama , Bunji Mizuno
发明人： Yuichiro Sasaki , Ichiro Nakayama , Bunji Mizuno
IPC分类号： H01L29/00 , H01L21/42
CPC分类号： H01L21/2236 , H01J37/32412 , H01L21/26513
摘要： An impurity region having a box-shaped impurity profile is formed.An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.
摘要翻译：形成具有盒状杂质分布的杂质区域。杂质引入方法包括将期望的杂质引入固体基体的表面的步骤，以及在杂质引入步骤之后将等离子体辐射到固体基体表面的步骤，从而形成具有大致盒形的杂质分布，形状。

69. 发明申请

US20070212837A1 Method And Apparatus Of Fabricating Semiconductor Device 失效
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US20070212837A1
公开(公告)日：2007-09-13
申请号：US11596372
申请日：2005-05-12
申请人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
发明人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
IPC分类号： H01L21/77
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/28035 , H01L29/7833
摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。

70. 发明授权

US07192854B2 Method of plasma doping 失效
标题翻译：等离子体掺杂法
公开(公告)号：US07192854B2
公开(公告)日：2007-03-20
申请号：US10532768
申请日：2003-11-18
申请人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama , Hisataka Kanada , Tomohiro Okumura
发明人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama , Hisataka Kanada , Tomohiro Okumura
IPC分类号： H01L21/42 , H01L21/26
CPC分类号： H01L21/2236
摘要： A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6 gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6 in mixed gas is less than 0.05%.
摘要翻译：可以在不降低掺杂效率的情况下进行等离子体掺杂的等离子体掺杂方法，其中使B 2 H 2 H 6的稀释最大化以提高安全性和稳定的等离子体产生和维持能力，其中可以容易地控制注入的掺杂剂的量。特别地，等离子体掺杂的方法特征在于，使用B 2 H 6 H 6气体作为含有掺杂杂质的材料，同时使用He作为高解离能的物质，混合气体中的B 2 H 6 H 6的浓度小于0.05％。

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